• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.94-97
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• 2003

A precise fabrication technology of glass is increasingly demanded fer the latest Industrial applications of spherical lenses. micro-optical components, laser applications and so on. Most of cases, the surface roughness of glass is required to be minute for improving the optical characteristics. Then. the machining characteristics of SF-5 glass and quarts glass were studied by using the ELID grinding process to get mirror surface and productivity compared with a general lapping process. A rotary type grinder with ELID generator was used to make the mirror surface of glass and a Mitutoyo surface tester and a nano-hardness tester were also used to measure the grinded surface or glass. As the results of experiments. they showed that the surface roughness(Ra) of SF-5 glass was under 7.8 nm and that of quartz glass was under 3.0 nm using the # 8000 grinder. So, the possibility of highly efficient and accurate surface for optical components can be achieved by the ELID grinding process.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.7
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• pp.56-62
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• 2003

The precision fabrication of glass is increasingly demanded for the latest industrial applications of spherical lenses, micro-optical components, and so on. In many cases, the surface roughness of glass is required to be minute for improving the optical characteristics. In this paper, machining characteristics of SF-5 glass and quarts glass are studied by using the ELID grinding process to get mirror surface and productivity compared with a general lapping process. A rotary type grinder with air spindle was used for the experiments. Mitutoyo surface tester and AFM were also used to measure the grinded surface of glass. As the results of experiments, they showed that the surface roughness (Ra) of SF-5 glass was under 7.8 nm and that of quartz glass was under 3.0 m using the # 8000 grinder. So, the possibility of highly efficient and accurate surface for optical components can be achieved by the ELID grinding process.

• Nuclear Engineering and Technology
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• v.53 no.6
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• pp.2025-2037
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• 2021

The influence of lead cations on natural quartz (QZ) from Egypt as a glass shielding material for the composition with nominal formula (10Na₂O - (90 - x) QZ - xPbO (where x = 30, 35, 40, 45 and 50 mol %)) was examined. The studied samples are synthesized via the melt quenching method at 1050 ℃. The X-ray diffraction XRD patterns were confirmed the glass nature for studied samples. Moreover, the optical properties, and the transparency for all compositions were examined by UV-Vis spectroscopy. Also, the major elemental composition of the natural quartz were estimated via the X-ray fluorescence (XRF) technique. Further, the density and molar volume were determined. Furthermore, the nuclear shielding parameters such as, mass attenuation coefficient, effective atomic number, electronic density, the total atomic, and electronic cross sections as well as the mean free path, and the half value layer with different gamma ray energies (81 keV-1407 keV) were calculated. Besides, the results showed that the shielding behavior towards the gamma ray radiation for all glass samples was increased as the increment in PbO concentration in the glass system.

• Journal of Powder Materials
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• v.20 no.2
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• pp.134-137
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• 2013

The quartz glasses were prepared by fumed silica powders sintering method at $1210^{\circ}C$, $1230^{\circ}C$, $1250^{\circ}C$ in air and the effect of sintering temperature on their properties were investigated. The X-ray diffraction pattern, the OH concentration, the light transmittance, the apparent porosity and the density were analyzed. The transparent quartz glass were obtained above $1230^{\circ}C$. The OH-group and macroscopic pores were removed above $1230^{\circ}C$ and highest density and light transmittance were obtained at $1250^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.21 no.3
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• pp.209-216
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• 1984

The influence of the particle size of quartz and the change of cooling rate to the strength of conventional triaxial porcelain was studied, . The results indicate that 1. The residual quartz content was increased by particle size increasing. And the strength was increased by increas-ing residual quartz content which increased the total stress in the specimen. But the influence of residual quartz was lessened by the extent of crack between quartz particle and glass matrix 2. In order to increase the strength of the body fast cooling is suitable to small quartz particle and slow cooling is suitable to large quartz particle.

• Current Optics and Photonics
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• v.7 no.4
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• pp.337-344
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• 2023

Three-point bending is the main method for measuring the elastic modulus of a thin plate. Although various displacement transducers may be used to measure the bending, these are single-point measurements, and it is difficult to eliminate the error caused by eccentric load and shear force. Error-correction models for the elastic modulus of quartz glass using digital speckle interferometry are proposed for eccentric load and shear force. First, the positional misalignment between maximum deflection and load is analyzed, and the error caused by eccentric load is corrected. Then, the additional displacement caused by shear force at different positions of the quartz glass plate is explored. The effect of shear deformation is also corrected, by measuring two points. Since digital speckle interferometry has the advantage of full-field measurement, it can simultaneously obtain deflection data for multiple points to realize error correction. Experimental results are presented to demonstrate that the proposed model can effectively correct the measurement error of the elastic modulus.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.3
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• pp.115-120
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• 2022

A brown ring (hereinafter referred to as BR) on the inner surface of a quartz glass crucible used in the manufacturing process of a silicon ingot for semiconductor wafers was studied. BR is 20~30 ㎛ in size and has an asymmetric brown ring shape. The size and distribution of BR were different depending on the crucible location, and the size and distribution of BR were the largest and most abundant in the round part with the highest crucible temperature during Si ingot growth. BR contains cristobalite, which has a higher coefficient of thermal expansion than quartz glass, so it is considered that surface cracks appear. The color development of BR and pin holes are presumed to be due to oxygen vacancies.

• Journal of Powder Materials
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• v.19 no.6
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• pp.412-415
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• 2012

The quartz glasses were prepared by sintering of fumed silica powders and the effect of OH concentration on their surface on sintering was studied. Through the firing process, the fumed silica was crystallized from 1180 to $1260^{\circ}C$ region. The amount of hydroxyl group decreased with increase in calcination temperature and consequently the crystallization was prevented. A transparent quartz glass was obtained from fumed silica, previously calcined at $1000^{\circ}C$, by the sintering at $1250^{\circ}C$ for 1 h.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.238-244
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• 1994

We investigated solution growth of silicon on borosilicate and quartz glass substrates in the temperature range of $800^{\circ}C~520^{\circ}C$. A thin Al-Si layer evaporated onto the substrate serves to improve the wetting between the substrate and the Al/Ga solvent. Nucleation takes place by a reaction of Al with $SiO_2$ from the substrate. We obtained silicon deposits with a grain size up to a few 100 $\mu\textrm{m}$. There was a perferential (111) orientation for the case of quartz glass substrates while there is a strong contribution of other orientations for the deposition of Si on borosilicate glass substrates.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1103-1107
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• 2005

Single-crystal silicon thin films on glass (SOG) and on fused-quartz (SOQ) were prepared using wafer bonding and hydrogen-induced layer transfer. Thinfilm transistors (TFTs) were subsequently fabricated. The high-temperature processed SOQ TFTs show better device performance than the low-temperature processed SOG TFTs. Tensile and compressive strain was measured respectively on SOQ and SOG. Consistent with the tensile strain, enhanced electron effective mobility was measured on the SOQ TFTs.