• 한국전기전자재료학회논문지
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• 제28권10호
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• pp.676-681
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• 2015

Recently many studies being carried out to increase the light efficiency of LED. The external quantum efficiency of LED, generally the light efficiency, is determined by the internal quantum efficiency and the light extraction efficiency. The internal quantum efficiency of LED was already reached to more than 90%, but the light extraction efficiency is still insufficient compared with the internal quantum efficiency because the total internal reflection is generated in the interface between the LED chip and air. Thus, we studied about flip chip LED with PSS and performed the optical simulation which find more optimized PSS for flip chip LED to increase the light extraction efficiency. Decreasing of the total internal reflection and effect of diffused reflection according to PSS improved the light extraction efficiency. To get more higher the efficiency, we simulated flip chip with PSS that the parameters are arrangement, edge spacing, radius, height and shape of PSS.

• 한국광학회지
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• 제14권3호
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• pp.286-291
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• 2003

광대역 이득 특성을 얻기 위한 InGaAsP-InP 응력보상 비대칭 다중 양자우물(Asymmetric Multiple Quantum Well, AMQW) 구조를 성장하고, Ridge Waveguide Laser Diodes(RWG-LDs)를 제작하였다. 제작 후 소자의 동작변수와 모드 이득을 측정하였으며, 얻어진 결과를 비교, 분석하였다. 외부 공진기형 구조에서 넓고 평탄한 이득특성을 얻기 위해 한쪽 단면에 Anti-Reflection(AR) 코팅을 수행하여 AR coated AMQW RWG LD의 이득특성을 분석하였다.

• 반도체디스플레이기술학회지
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• 제17권2호
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• pp.12-15
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• 2018

InSb (III-V compound semiconductor) is used for photodiode to detect the mid-wavelength infrared radiation. Generally the quantum efficiency of InSb IR FPAs(Focal Plane Arrays) is known to be determined by thickness of InSb and transmittance of anti-reflection coating layer. In this study, we confirmed that the C-V characteristics of detector array affects the quantum efficiency of the InSb IR FPAs. We fabricated the IR FPAs with various $V_{fb}$(flat band voltage) values and confirmed the tendency between the $V_{fb}$ value and quantum efficiency of the IR FPAs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.77-78
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• 2006

In order to increase the efficiency of LED, transparent electrodes should be also developed. also suitable anti-reflection coating (ARC) is necessary for practical device applications. In our paper, Al-doped ZnO (AZO) films were fabricated by sputtering on GaP substrate(wavelength:620nm). Choosing optimum substrate temperature and sputtering rate, high quality AZO films were formed. We confirmed that the surface and electrical properties, which implemented using the methods of AFM, Hall measurement. The properties of AZO thin films especially depended on the thickness. We presumed that the change of the increase the external quantum efficiency of LED according to the AZO thin film of thickness.

• 한국가시화정보학회지
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• 제21권3호
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• pp.65-74
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• 2023

Compared to epifluorescence(EPI) microscopy which captures fluorescence from the entire depth of sample, total internal reflection fluorescence(TIRF) can selectively visualize only a single surface of it. TIRF uses a thin evanescent field generated by the total internal reflection of laser light on surface. However, conventional TIRF system are designed for total internal reflection to occur at the upper surface of sample, making them unsuitable for sessile droplet imaging. We designed a TIRF system suitable for a sessile droplet imaging by utilizing slide glass as a lightguide. We presented the details for constructing the TIRF system using a prism, slide glass, air slit, and optical trap. Then, we compared the TIRF with EPI by imaging the droplet with fluorescent particles during its drying process. As a result, TIRF allows us to distinctly visualize the drying pattern on the bottom surface of droplet.

• 세라미스트
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• 제21권1호
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• pp.64-79
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• 2018

Recent years, OLEDs have been progressed intensively and been widely applied to Display and Lighting industry,Almost 100% internal quantum efficiency was achieved by developing new materials and structure optimization. However, external quantum efficiency was still low due to total internal reflection of light inside OLED devices and absorption of light at the surface of metal electrode. In order to improve external quantum efficiency of OLED devices, various kinds of optical functional structures were introduced to inside and outside of OLED devices to increase light extraction efficiency. In this paper, various efforts to apply optical functional structures in OLED devices were reviewed and way to improve light extraction efficency of OLED devices were discussed.

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 제11회 정기총회 및 00년 동계학술발표회 논문집
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• pp.268-269
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• 2000

We demonstrate a polarization insensitive waveguide filter using quantum well intermixing(QWI). The bandgap of epitaxial layer is modified from 1.55${\mu}{\textrm}{m}$ to 1.40${\mu}{\textrm}{m}$ using QWI and a Bragg grating filter is demonstrated using electron beam lithography technology. The fabricated waveguide filter has a 70% reflection efficiency and a 1.46nm filter bandwidth. Furthermore polarization insensitive transmission characteristics are observed. The device can be applied to photonic integrated circuits(PIC).

• Applied Science and Convergence Technology
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• 제26권3호
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• pp.52-54
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• 2017

An InGaN/GaN multiple quantum well (MQW) structure is grown on a GaN/sapphire template using a plasma-assisted molecular beam epitaxy (PA-MBE). The fluctuation of the quantum well thickness formed from roughly-grown InGaN layer results in a disordered photoluminescence (PL) spectrum. The surface morphologies of the InGaN layers with various In compositions are investigated by reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). A blurred InGaN/GaN hetero-interface and the non-uniform QW size is confirmed by high resolution transmission electron microscopy (HR-TEM). Inhomogeneity of the quantum confinement results in a degradation of the quantum efficiency even though the InGaN layer has a uniform In composition.

• Journal of the Optical Society of Korea
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• 제16권1호
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• pp.53-56
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• 2012

We have developed a slab-type Nd:YAG gain module based on the techniques of conduction cooling and end pumping. The Nd:YAG slab is end-capped on both ends by undoped pure YAG and is pumped through the end-caps by stacked arrays of laser diode bars. The slab's surfaces of total internal reflection are in contact on both sides with microchannel cooling blocks which are cooled by water circulation. The power oscillator based on the gain module generates more than 400 W at 1-kW pumping with a slope efficiency of 55%. The small-signal gain of the gain module is 10 in a single zig-zag pass, and the amplified beam shows a near diffraction-limited beam quality.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.21-21
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• 2003

To increase the light-emission efficiency of LED, we increased the internal and external quantum efficiency by suppressing the defect formation in the quantum well and by increasing the light extraction efficiency in LED, respectively. First, the internal quantum efficiency was improved by investigating the effect of a low temperature (LT) grown p-GaN layer on the In$\sub$0.25/GaN/GaN MQW in green LED. The properties of p-GaN was optimized at a low growth temperature of 900oC. A green LED using the optimized LT p-type GaN clearly showed the elimination of blue-shift which is originated by the MQW damage due to the high temperature growth process. This result was attributed to the suppression of indium inter-diffusion in MQW layer as evidenced by XRD and HR-TEM analysis. Secondly, we improved the light-extraction efficiency of LED. In spite of high internal quantum efficiency of GaN-based LED, the external quantum efficiency is still low due to the total internal reflection of the light at the semiconductor-air interface. To improve the probability of escaping the photons outside from the LED structure, we fabricated nano-sized cavities on a p-GaN surface utilizing Pt self-assembled metal clusters as an etch mask. Electroluminescence measurement showed that the relative optical output power was increased up to 80% compared to that of LED without nano-sized cavities. I-V measurement also showed that the electrical performance was improved. The enhanced LED performance was attributed to the enhancement of light escaping probability and the decrease of resistance due to the increase in contact area.