Design and Fabrication of Broad Gain Laser Diodes |
권오기
(한국전자통신연구원 광통신소자 연구부)
김강호 (한국전자통신연구원 광통신소자 연구부) 김현수 (한국전자통신연구원 광통신소자 연구부) 김종회 (한국전자통신연구원 광통신소자 연구부) 심은덕 (한국전자통신연구원 광통신소자 연구부) 오광룡 (한국전자통신연구원 광통신소자 연구부) |
1 |
Experimental and theoretical analysis of the carrier distribution in asymmetric multiple quantum-well InGaAsP lasers
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DOI ScienceOn |
2 |
1.4-mm InGaAsP-InP Strained multiple-quantum-well laser for broad-wave-length tunability
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DOI ScienceOn |
3 |
Low-threshold and high-temoerature operation of 1.55㎛ self-aligned ridge-waveguide multiple-quantum-well lasers grown by chemical-beam epitaxy
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DOI |
4 |
Gain measurement on one, two, and three strained GaInP quantum well laser diodes
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DOI ScienceOn |
5 |
External-cavity diode laser using a grazing-incidence diffraction grating
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DOI |
6 |
Broad spectral bandwidth semiconductor lasers
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DOI ScienceOn |
7 |
Continuously tuned external cavity semicondutor laser
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DOI ScienceOn |
8 |
Design and characteristics of widely tunable quantum-well laser diodes
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DOI ScienceOn |
9 |
Well number, length, and temperature dependence of efficiency and loss in InGaAsP-InP compressively strained MQW ridge wave-duide lasers at 1.3㎛
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DOI ScienceOn |
10 |
External-cavity semiconductor laser tunable from 1.3 to 1.54mm for optical communication
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DOI ScienceOn |
11 |
Broadly tunable external cavity laser diodes with staggered thickness multiple quantum wells
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DOI ScienceOn |
12 |
비대칭 다중 양자 우물 레이저 다이오드에서 모드이득의 이론 및 실험적 분석
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과학기술학회마을 DOI ScienceOn |
13 |
Effect of barrier height on the uneven carrier distribution in asymmetric multiple-quantum-well InGaAsP lasers
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DOI ScienceOn |