• Title/Summary/Keyword: quantum critical point

Search Result 8, Processing Time 0.017 seconds

A REVIEW OF HELIUM GAS TURBINE TECHNOLOGY FOR HIGH-TEMPERATURE GAS-COOLED REACTORS

  • No, Hee-Cheon;Kim, Ji-Hwan;Kim, Hyeun-Min
    • Nuclear Engineering and Technology
    • /
    • v.39 no.1
    • /
    • pp.21-30
    • /
    • 2007
  • Current high-temperature gas-cooled reactors (HTGRs) are based on a closed Brayton cycle with helium gas as the working fluid. Thermodynamic performance of the axial-flow helium gas turbines is of critical concern as it considerably affects the overall cycle efficiency. Helium gas turbines pose some design challenges compared to steam or air turbomachinery because of the physical properties of helium and the uniqueness of the operating conditions at high pressure with low pressure ratio. This report present a review of the helium Brayton cycle experiences in Germany and in Japan. The design and availability of helium gas turbines for HTGR are also presented in this study. We have developed a new throughflow calculation code to calculate the design-point performance of helium gas turbines. Use of the method has been illustrated by applying it to the GTHTR300 reference.

Pressure Effects on the Hg-doped Heavy-fermion Superconductor $CeRhIn_5$ (Hg을 도핑한 무거운 페르미온 초전도체 $CeRhIn_5$의 압력에 따른 변화)

  • Seo, S.;Ju, S.;Bauer, E.D.;Thompson, J.D.;Park, T.
    • Progress in Superconductivity
    • /
    • v.14 no.1
    • /
    • pp.17-23
    • /
    • 2012
  • The heavy-fermion compound $CeRhIn_5$ is a prototypical antiferromagnet where Ce 4f moments align antiferromagnetically below 3.8 K. When doped with Hg, the antiferromagnetic transition $T_N$ initially decreases, becomes flat, and increases again with further increasing Hg concentration. Here we report pressure effects on the electrical resistivity of a 0.45 % Hg-doped $CeRhIn_5$, where $T_N$ is 3.4 K and the magnetic structure is same as that of the undoped compound with Q=(1/2, 1/2, 0.298). With increasing pressure, $T_N$ is suppressed and a superconducting state emerges. The temperature dependence of the electrical resistivity near an optimal pressure shows a power-law behavior that deviates from a $T^2$ dependence, indicating presence of abundant quantum fluctuations near the optimal pressure.

Montgomery Multiplier with Very Regular Behavior

  • Yoo-Jin Baek
    • International Journal of Internet, Broadcasting and Communication
    • /
    • v.16 no.1
    • /
    • pp.17-28
    • /
    • 2024
  • As listed as one of the most important requirements for Post-Quantum Cryptography standardization process by National Institute of Standards and Technology, the resistance to various side-channel attacks is considered very critical in deploying cryptosystems in practice. In fact, cryptosystems can easily be broken by side-channel attacks, even though they are considered to be secure in the mathematical point of view. The timing attack(TA) and the simple power analysis attack(SPA) are such side-channel attack methods which can reveal sensitive information by analyzing the timing behavior or the power consumption pattern of cryptographic operations. Thus, appropriate measures against such attacks must carefully be considered in the early stage of cryptosystem's implementation process. The Montgomery multiplier is a commonly used and classical gadget in implementing big-number-based cryptosystems including RSA and ECC. And, as recently proposed as an alternative of building blocks for implementing post quantum cryptography such as lattice-based cryptography, the big-number multiplier including the Montgomery multiplier still plays a role in modern cryptography. However, in spite of its effectiveness and wide-adoption, the multiplier is known to be vulnerable to TA and SPA. And this paper proposes a new countermeasure for the Montgomery multiplier against TA and SPA. Briefly speaking, the new measure first represents a multiplication operand without 0 digits, so the resulting multiplication operation behaves in a very regular manner. Also, the new algorithm removes the extra final reduction (which is intrinsic to the modular multiplication) to make the resulting multiplier more timing-independent. Consequently, the resulting multiplier operates in constant time so that it totally removes any TA and SPA vulnerabilities. Since the proposed method can process multi bits at a time, implementers can also trade-off the performance with the resource usage to get desirable implementation characteristics.

The Description of Near-Critical Region for the Non-Ideal Inter-Particle Interacting Molecules such as n-Alkane(linear) and Alkyl-Amine(dipolar) by using Generalized van der Waals Equation of States (일반화된 반데르발스 상태방정식을 이용한 비이상적 입자 상호작용을 갖는 알칸(선형성) 및 알킬 아민류(쌍극자성)에 대한 임계 영역 특성분석)

  • Kim, Jibeom;Lee, Sukbae;Jeon, Joonhyeon
    • Korean Chemical Engineering Research
    • /
    • v.48 no.2
    • /
    • pp.224-231
    • /
    • 2010
  • In GvdW EOS, a recently presented paper, shows that the characteristic status for spherical non-linear particle, of which the mutual behavior is known to be vdWf(van der Waals force) only, could be described well enough in the critical region. However, in current papers, analysis has not been done on GvdW about whether it is accurate or not, even for the particles in the linear form or those with the additional mutual behavior such as static-electricity, so there's some argument about the wide use of that. Therefore, in this paper, for the simulation in the critical region of Normal-alkane group(R=methane, ethane, propane, butane) which are the particles that has a linear charateristic and Normal-amine group($RNH_2$, R=methyl-, ethyl-, propyl-amine) where static-electricity is extremely shown, GvdW parameter values about these particles are defined, and based on this simulation, we compared results to the current EOS presented recently, and analyzed them. Through the simulation, it was shown that in case of Normal-alkane group and Normal-amine group molecules, GvdW presents an accurate critical region characteristic which is far more close to the measurement compared to current EOSs. Especially for butane with big amount in molecules, we found out that only GvdW EOS can reach close enough to the critical point.

Prediction of Vapor Pressure of the Inert Gases (비활성 기체의 증기압 예측)

  • Chung, Jaygwan-G.
    • Journal of the Korean Chemical Society
    • /
    • v.47 no.6
    • /
    • pp.541-546
    • /
    • 2003
  • Experimental vapor pressure measurements available in the literature for the inert gases have been rigorously analyzed and used to evaluate the constants A, B, C, D, and exponent of the following equation in the form of reduced vapor pressure and reduced temperature : $InP_r=A+{\frac{B}{T_r}+CInT_r+DT_n^r}$ According to varying exponent n all four constants have been obtained for the inert gases by the error analysis. This has provided us the best n and four constants for each of the inert gases ; Argon, krypton, xenon, helium, and neon. In order to obtain the calculated vapor pressure by the above equation, only the normal boiling point and the critical pressure and critical temperature are necessary to get the vapor pressure for an overall average deviation of 0.31 % for 406 experimental vapor pressure points consisting of five gases available in the literature. The average deviation for argon, krypton, and xenon is 0.24%, 0.09%, and 0.22%, respectively, for neon 1.31% and for helium 0.61%. These results are not unexpected in view of the significant quantum effects associated with helium and to a lesser degree with neon.

Thereshold Switching into Conductance Quantized Sttes in V/vamorphous- $V_{2}$ $O_{5}$/V Thin Film Devices (V/비정질- $V_{2}$ $O_{5}$ /lV 박막소자에서의 양자화된 컨덕턴스 상태로의 문턱 스위칭)

  • 윤의중
    • Journal of the Korean Institute of Telematics and Electronics D
    • /
    • v.34D no.12
    • /
    • pp.89-100
    • /
    • 1997
  • This paper investigated a new type of low voltage threshold switch (LVTS). As distinguished from the many other types of electronic threshold switches, the LvTS is ; voltage controlled, occurs at low voltages ($V_{2}$ $O_{5}$lV devices. The average low threshold voltage < $V_{LVT}$>=218 mV (standard deviation =24mV~kT/q, where T=300K), and was independent of the device area (x100) and amorphous oxide occurred in an ~22.angs. thick interphase of the V/amorphous- $V_{2}$ $O_{5}$ contacts. At $V_{LVT}$ there was a transition from an initially low conductance (OFF) state into a succession of quantized states of higher conductance (ON). The OFF state was spatically homogeneous and dominated by tunneling into the interphase. The ON state conductances were consistent with the quantized conductances of ballistic transport through a one dimensional, quantum point contact. The temeprature dependence of $V_{LVT}$, and fit of the material parameters (dielectric function, barrier energy, conductivity) to the data, showed that transport in the OFF and ON states occurred in an interphase with the characteristics of, respectively, semiconducting and metallic V $O_{2}$. The experimental results suggest that the LVTS is likely to be observed in interphases produced by a critical event associated with an inelastic transfer of energy.rgy.y.rgy.

  • PDF

Structure and Bonding of Ni(C6H4-nFn)(CO)2 (C6H4=benzyne, n=1-4) Complexes (Ni(C6H4-nFn)(CO)2 (C6H4=benzyne, n=1-4) 착물의 구조 및 화학결합)

  • Ghiasi, Reza;Hashemian, Saeedeh;Irajee, Oranoos
    • Journal of the Korean Chemical Society
    • /
    • v.55 no.2
    • /
    • pp.183-188
    • /
    • 2011
  • The electronic structure and properties of Ni$(C_6H_{4-n}F_n)(CO)_2$ ($C_6H_4$=benzyne, n=1-4) complexes have been investigated using hybrid density functional B3LYP theory. Both aromatic natures and nucleus independent chemical shift (NICS) of the benzyne rings have been analyzed. Among mono-, di-, and tri-fluorinated complexes, 3-F, 3,6-F, and 4-H are the most stable isomers, respectively. NICS values calculated at the several points above the ring centers are consistent with those based on the relative energies of the complexes. The atoms in molecules (AIM) analysis indicates that Ni-C bond distance is well correlated with the electron density of a ring critical point (${\rho}_{rcp}$) in all species.