• 제목/요약/키워드: quantum critical point

검색결과 8건 처리시간 0.02초

A REVIEW OF HELIUM GAS TURBINE TECHNOLOGY FOR HIGH-TEMPERATURE GAS-COOLED REACTORS

  • No, Hee-Cheon;Kim, Ji-Hwan;Kim, Hyeun-Min
    • Nuclear Engineering and Technology
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    • 제39권1호
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    • pp.21-30
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    • 2007
  • Current high-temperature gas-cooled reactors (HTGRs) are based on a closed Brayton cycle with helium gas as the working fluid. Thermodynamic performance of the axial-flow helium gas turbines is of critical concern as it considerably affects the overall cycle efficiency. Helium gas turbines pose some design challenges compared to steam or air turbomachinery because of the physical properties of helium and the uniqueness of the operating conditions at high pressure with low pressure ratio. This report present a review of the helium Brayton cycle experiences in Germany and in Japan. The design and availability of helium gas turbines for HTGR are also presented in this study. We have developed a new throughflow calculation code to calculate the design-point performance of helium gas turbines. Use of the method has been illustrated by applying it to the GTHTR300 reference.

Hg을 도핑한 무거운 페르미온 초전도체 $CeRhIn_5$의 압력에 따른 변화 (Pressure Effects on the Hg-doped Heavy-fermion Superconductor $CeRhIn_5$)

  • 서순범;주솔;;;박두선
    • Progress in Superconductivity
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    • 제14권1호
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    • pp.17-23
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    • 2012
  • The heavy-fermion compound $CeRhIn_5$ is a prototypical antiferromagnet where Ce 4f moments align antiferromagnetically below 3.8 K. When doped with Hg, the antiferromagnetic transition $T_N$ initially decreases, becomes flat, and increases again with further increasing Hg concentration. Here we report pressure effects on the electrical resistivity of a 0.45 % Hg-doped $CeRhIn_5$, where $T_N$ is 3.4 K and the magnetic structure is same as that of the undoped compound with Q=(1/2, 1/2, 0.298). With increasing pressure, $T_N$ is suppressed and a superconducting state emerges. The temperature dependence of the electrical resistivity near an optimal pressure shows a power-law behavior that deviates from a $T^2$ dependence, indicating presence of abundant quantum fluctuations near the optimal pressure.

Montgomery Multiplier with Very Regular Behavior

  • Yoo-Jin Baek
    • International Journal of Internet, Broadcasting and Communication
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    • 제16권1호
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    • pp.17-28
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    • 2024
  • As listed as one of the most important requirements for Post-Quantum Cryptography standardization process by National Institute of Standards and Technology, the resistance to various side-channel attacks is considered very critical in deploying cryptosystems in practice. In fact, cryptosystems can easily be broken by side-channel attacks, even though they are considered to be secure in the mathematical point of view. The timing attack(TA) and the simple power analysis attack(SPA) are such side-channel attack methods which can reveal sensitive information by analyzing the timing behavior or the power consumption pattern of cryptographic operations. Thus, appropriate measures against such attacks must carefully be considered in the early stage of cryptosystem's implementation process. The Montgomery multiplier is a commonly used and classical gadget in implementing big-number-based cryptosystems including RSA and ECC. And, as recently proposed as an alternative of building blocks for implementing post quantum cryptography such as lattice-based cryptography, the big-number multiplier including the Montgomery multiplier still plays a role in modern cryptography. However, in spite of its effectiveness and wide-adoption, the multiplier is known to be vulnerable to TA and SPA. And this paper proposes a new countermeasure for the Montgomery multiplier against TA and SPA. Briefly speaking, the new measure first represents a multiplication operand without 0 digits, so the resulting multiplication operation behaves in a very regular manner. Also, the new algorithm removes the extra final reduction (which is intrinsic to the modular multiplication) to make the resulting multiplier more timing-independent. Consequently, the resulting multiplier operates in constant time so that it totally removes any TA and SPA vulnerabilities. Since the proposed method can process multi bits at a time, implementers can also trade-off the performance with the resource usage to get desirable implementation characteristics.

일반화된 반데르발스 상태방정식을 이용한 비이상적 입자 상호작용을 갖는 알칸(선형성) 및 알킬 아민류(쌍극자성)에 대한 임계 영역 특성분석 (The Description of Near-Critical Region for the Non-Ideal Inter-Particle Interacting Molecules such as n-Alkane(linear) and Alkyl-Amine(dipolar) by using Generalized van der Waals Equation of States)

  • 김지범;이석배;전준현
    • Korean Chemical Engineering Research
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    • 제48권2호
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    • pp.224-231
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    • 2010
  • 최근 발표된 GvdW(Generalized van der Waals) EOS에서는 상호작용이 vdWf(van der Waals force)뿐이라고 여겨지는 구체특성의 비선형적 입자에 대해 임계영역에서의 상태 특성이 잘 기술될 수 있음을 보였다. 그러나 기존의 논문에서는 선형성을 갖는 입자의 형태나 정전기적 인력 등 추가적인 상호작용이 존재하는 입자에 대해서도 GvdW가 정확성을 나타내는지에 대한 분석이 이루어지지 않아, GvdW의 범용성에 대한 논란의 여지가 남아있다. 따라서 본 논문에서는 선형성을 갖는 입자인 포화 알칸 유도체 류(R=methane, ethane, propane, butane)와 정전기적 인력이 극한적으로 나타나는 포화 아민 유도체 류($RNH_2$, R=methyl-, ethyl-, propyl-amine)에 대한 임계영역 시뮬레이션을 위하여 이들 입자들에 대한 GvdW의 파라미터 값을 정의하였으며, 이를 바탕으로 최근에 발표된 기존의 상태방정식들과 비교 분석하였다. 시뮬레이션 결과 포화 알칸 유도체 류와 포화 아민 유도체 류 입자에 대하여 GvdW는 기존의 방정식들보다 측정값에 더 가까운 정확한 임계영역 특성이 나타남을 확인할 수 있었다. 특히 분자량이 큰 부탄에 있어서는 GvdW EOS만이 임계점에 정확하게 근접함을 알 수 있었다.

비활성 기체의 증기압 예측 (Prediction of Vapor Pressure of the Inert Gases)

  • 정재관
    • 대한화학회지
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    • 제47권6호
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    • pp.541-546
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    • 2003
  • 문헌에 보고된 기존의 비활성 기체의 증기압 측정값을 이용하여 환원증기압과 환원온도 형태의 아래와 같은 식의 상수 A, B, C, D와 지수 n을 구하는데 사용하였다: $InP_r=A+{\frac{B}{T_r}+CInT_r+DT_n^r}$ 오차분석법에 의해 위 식에 적용되는 비활성 기체의 각 기체 Ar, Kr, Xe, He과 Ne에 대한 가장 정확한 지수와 4개의 상수를 얻었다. 위 식을 통해 각 기체의 증기압을 계산하기 위해서 필요한 것은 정상 끓는점, 임계압력 및 임계온도뿐이며 5개의 비활성 기체의 406개 증기압 실험값에 적용하여 본 결과 전체 평균편차가 0.31% 였다. Ar, Kr, Xe에 대한 평균편차는 각각 0.24%, 0.09%, 0.22%였으며, Ne은 1.31%, He은 0.61%이다. 이러한 결과는 He과 연관된 큰 양자효과와 Ne에 대한 적은 양자효과 때문에 예상된 것이다.

V/비정질- $V_{2}$ $O_{5}$ /lV 박막소자에서의 양자화된 컨덕턴스 상태로의 문턱 스위칭 (Thereshold Switching into Conductance Quantized Sttes in V/vamorphous- $V_{2}$ $O_{5}$/V Thin Film Devices)

  • 윤의중
    • 전자공학회논문지D
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    • 제34D권12호
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    • pp.89-100
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    • 1997
  • This paper investigated a new type of low voltage threshold switch (LVTS). As distinguished from the many other types of electronic threshold switches, the LvTS is ; voltage controlled, occurs at low voltages ($V_{2}$ $O_{5}$lV devices. The average low threshold voltage < $V_{LVT}$>=218 mV (standard deviation =24mV~kT/q, where T=300K), and was independent of the device area (x100) and amorphous oxide occurred in an ~22.angs. thick interphase of the V/amorphous- $V_{2}$ $O_{5}$ contacts. At $V_{LVT}$ there was a transition from an initially low conductance (OFF) state into a succession of quantized states of higher conductance (ON). The OFF state was spatically homogeneous and dominated by tunneling into the interphase. The ON state conductances were consistent with the quantized conductances of ballistic transport through a one dimensional, quantum point contact. The temeprature dependence of $V_{LVT}$, and fit of the material parameters (dielectric function, barrier energy, conductivity) to the data, showed that transport in the OFF and ON states occurred in an interphase with the characteristics of, respectively, semiconducting and metallic V $O_{2}$. The experimental results suggest that the LVTS is likely to be observed in interphases produced by a critical event associated with an inelastic transfer of energy.rgy.y.rgy.

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Ni(C6H4-nFn)(CO)2 (C6H4=benzyne, n=1-4) 착물의 구조 및 화학결합 (Structure and Bonding of Ni(C6H4-nFn)(CO)2 (C6H4=benzyne, n=1-4) Complexes)

  • Ghiasi, Reza;Hashemian, Saeedeh;Irajee, Oranoos
    • 대한화학회지
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    • 제55권2호
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    • pp.183-188
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    • 2011
  • Ni$(C_6H_{4-n}F_n)(CO)_2$ ($C_6H_4$=benzyne, n=1-4) 착물의 전자구조 및 성질을 혼성 밀도 함수 B3LYP 이론을 이용하여 조사하였다. Benzyne 고리에 대한 방향족 성질과 벤젠핵과 무관한 화학적이동(NICS)을 분석하였다. 일-, 이- 및 삼-플루오르화 착물 중에서 3-F, 3, 6-F, 및 4-H는 각기 가장 안정한 이성질체였다. 고리 중심 상단의 여러 점에서 계산한 NICS 수치는 이들 착물의 상대 에너지에 의해 구한 값들과 일치하였다. 분자-내-원자(AIM) 분석에서 얻어진 Ni-C 결합거리는 모든 화학종에 대한 고리 임계점의 전자밀도(${\rho}_{rcp}$)와 좋은 상관성을 보였다.