• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.4
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• pp.645-650
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• 2019

In this paper, a specifically designed waveguide structure that can carry first, and second-order orbital angular momentum(: OAM) mode is proposed. The proposed optical waveguide consists of three Si stripes embedded in $SiO_2$, which is suitable for implementing on-chip integration and fabrication by standard thin film deposition and etching processes. The second-order OAM mode was generated by combining two eigenmodes, which are calculated by finite difference method(: FDM). The topological charge number of the first, and second-order OAM mode was calculated as l=0.9642 and 1.8766 respectively, which is close to the theoretical value.

• Electronics and Telecommunications Trends
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• v.36 no.6
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• pp.1-12
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• 2021

As the demand for big data and big data-based artificial intelligence (AI) technology increases, the need for privacy preservations for sensitive information contained in big data and for high-speed encryption-based AI computation systems also increases. Fully homomorphic encryption (FHE) is a representative encryption technology that preserves the privacy of sensitive data. Therefore, FHE technology is being actively investigated primarily because, with FHE, decryption of the encrypted data is not required in the entire data flow. Data can be stored, transmitted, combined, and processed in an encrypted state. Moreover, FHE is based on an NP-hard problem (Lattice problem) that cannot be broken, even by a quantum computer, because of its high computational complexity and difficulty. FHE boasts a high-security level and therefore is receiving considerable attention as next-generation encryption technology. However, despite being able to process computations on encrypted data, the slow computation speed due to the high computational complexity of FHE technology is an obstacle to practical use. To address this problem, hardware technology that accelerates FHE operations is receiving extensive research attention. This article examines research trends associated with developments in hardware technology focused on accelerating the operations of representative FHE schemes. In addition, the detailed structures of hardware that accelerate the FHE operation are described.

• Proceedings of the Korea Information Processing Society Conference
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• 2023.05a
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• pp.227-229
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• 2023

양자컴퓨터는 큐비트(qubit)의 얽힘(entanglement)과 중첩(superposition) 성질을 통해 동시에 연산을 수행할 수 있어 고전컴퓨터에 비해 연산 속도가 획기적으로 빠르다. 전수조사 연산을 매우 빠르게 수행할 수 있는 양자 알고리즘인 Grover 알고리즘을 사용하면, n-bit 보안강도를 가지는 SHA2와 같은 해시함수를 n/2-bit 보안강도로 낮추게 되어 해시함수가 적용되는 분야의 보안을 위협하게 된다. 양자컴퓨터를 통한 해킹에는 많은 양자 자원이 요구되고, 안정적인 구동 환경이 갖춰져야 하기 때문에 실현되기 위해서는 아직까지 상당한 시간이 소요될 것으로 보인다. 이에 연구자들은 필요한 양자 자원을 최소화하는 효율적인 양자 공격 회로를 제시하며 연구를 수행하고 있다. 본 논문에서는 이러한 SHA2 해시함수에 대한 양자 회로 구현 동향에 대해 살펴본다.

• Nuclear Engineering and Technology
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• v.56 no.5
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• pp.1845-1853
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• 2024

The setpoint of the reactor trip system shall be set to consider the measurement uncertainty of the instrument channel and provide a reasonable and sufficient margin between the analytical limit and the trip setpoint. A comparative analysis was conducted to find out an appropriate uncertainty combination method through an example problem. The four methods were evaluated; 1) ISA-67.04.01 method, 2) the GUM95 method, 3) the modified GUM method developed by Fotowicz, and 4) the modified IEC61888 method proposed by authors for the pressure instrument channel presented in ISA-RP67.04.02 example. The appropriateness of each method was validated by comparing it with the result of Monte Carlo simulation. As a result of the evaluation, all methods are appropriate when all measurement uncertainty elements are normally distributed as expected. But ISA-67.04 method and GUM95 method overestimated the channel uncertainty if there is a dominant input element with rectangular distribution among the uncertainty input elements. Modified GUM95 methods developed by Fotowicz and modified IEC61888 method by authors are able to produce almost the same level of channel uncertainty as the Monte Carlo method, even when there is a dominant rectangular distribution among the uncertainty components, without computer-assisted simulations.

• ETRI Journal
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• v.41 no.6
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• pp.829-837
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• 2019

The p-type nanowire field-effect transistor (FET) with a SiGe shell channel on a Si core is optimally designed and characterized using in-depth technology computer-aided design (TCAD) with quantum models for sub-10-nm advanced logic technology. SiGe is adopted as the material for the ultrathin shell channel owing to its two primary merits of high hole mobility and strong Si compatibility. The SiGe shell can effectively confine the hole because of the large valence-band offset (VBO) between the Si core and the SiGe channel arranged in the radial direction. The proposed device is optimized in terms of the Ge shell channel thickness, Ge fraction in the SiGe channel, and the channel length (L_g) by examining a set of primary DC and AC parameters. The cutoff frequency (f_T) and maximum oscillation frequency (f_max) of the proposed device were determined to be 440.0 and 753.9 GHz when L_g is 5 nm, respectively, with an intrinsic delay time (τ) of 3.14 ps. The proposed SiGe-shell channel p-type nanowire FET has demonstrated a strong potential for low-power and high-speed applications in 10-nm-and-beyond complementary metal-oxide-semiconductor (CMOS) technology.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.45 no.5
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• pp.95-102
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• 2008

This paper presents an appropriate approach for modeling noise in Computed Radiography(CR) images of high strength materials. The approach is specifically designed for types of noise with the statistical and nonlinear properties. CR images Ere degraded even before they are encoded by computer process. Various types of noise often contribute to contaminate radiography image, although they are detected on digitalization. Quantum noise, which is Poisson distributed, is a shot noise, but the photon distribution on Image Plate(IP) of CR system is not always Poisson process. The statistical properties are relative and case-dependant due to its material characteristics. The usual assumption of a distribution of Poisson, binomial and Gaussian statistics are considered. Nonlinear effect is also represented in the process of statistical noise model. It leads to estimate the noise variance in regions from high to low intensity, specifying analytical model. The analysis approach is tested on a database of steel tube step-wedge CR images. The results are available for the comparative parameter studies which measure noise coherence, distribution, signal/noise ratios(SNR) and nonlinear interpolation.

• Korean Journal of Optics and Photonics
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• v.18 no.2
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• pp.155-161
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• 2007

A new and simple method of 3-dimensional circuit modeling and analysis is proposed and verified experimentally for the first time by determining 3-dimensional current flow and 2-dimensional light distribution in blue InGaN/GaN multi-quantum well (MQW) light emitting diode (LED) devices. Circuit parameters of the LED consist of the resistance of the metallic film and epitaxial layer, and the intrinsic diode which represents the active region emitting the light. The circuit parameters are extracted from the transmission line model (TLM) and current-voltage relation. We applied the >> proposed method and extracted circuit parameters to obtain the light emission pattern in a top-surface emitting-type LED. The current spreading effect is analyzed theoretically and quantitatively with a variation of the resistance of metallic and epitaxial layers. The emitting-light distribution of the fabricated blue LED showed a good agreement with the analyzed result, which shows the dark emission intensity at the corner of the p-electrode.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.77-77
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• 2016

Thin films synthesized by plasma processes have been widely applied in a variety of industrial sectors. The structure control of thin film is one of prime factor in most of these applications. It is well known that the structure of this film is closely associated with plasma parameters and species of plasma which are electrons, ions, radical and neutrals in plasma processes. However the precise control of structure by plasma process is still limited due to inherent complexity, reproducibility and control problems in practical implementation of plasma processing. Therefore the study on the fundamental physical properties that govern the plasmas becomes more crucial for molecular scale control of film structure and corresponding properties for new generation nano scale film materials development and application. The thin films are formed through nucleation and growth stages during thin film depostion. Such stages involve adsorption, surface diffusion, chemical binding and other atomic processes at surfaces. This requires identification, determination and quantification of the surface activity of the species in the plasma. Specifically, the ions and neutrals have kinetic energies ranging from ~ thermal up to tens of eV, which are generated by electron impact of the polyatomic precursor, gas phase reaction, and interactions with the substrate and reactor walls. The present work highlights these aspects for the controlled and low-temperature plasma enhanced chemical vapour disposition (PECVD) of Si-based films like crystalline Si (c-Si), Si-quantum dot, and sputtered crystalline C by the design and control of radicals, plasmas and the deposition energy. Additionally, there is growing demand on the low-temperature deposition process with low hydrogen content by PECVD. The deposition temperature can be reduced significantly by utilizing alternative plasma concepts to lower the reaction activation energy. Evolution in this area continues and has recently produced solutions by increasing the plasma excitation frequency from radio frequency to ultra high frequency (UHF) and in the range of microwave. In this sense, the necessity of dedicated experimental studies, diagnostics and computer modelling of process plasmas to quantify the effect of the unique chemistry and structure of the growing film by radical and plasma control is realized. Different low-temperature PECVD processes using RF, UHF, and RF/UHF hybrid plasmas along with magnetron sputtering plasmas are investigated using numerous diagnostics and film analysis tools. The broad outlook of this work also outlines some of the 'Grand Scientific Challenges' to which significant contributions from plasma nanoscience-related research can be foreseen.

• Resources Recycling
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• v.32 no.3
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• pp.3-8
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• 2023

This study discussed production, demand, and future prospects of rubidium, which is an alkali group metal that is highly reactive to various media and requires carefulness in handling, but no significant environmental hazard of rubidium has been reported yet. Rubidium is used in various fields such as optoelectronic equipment, biomedical, and chemical industries. Because of difficulty in production as well as limited demand, the transaction price of rubidium is relatively high, but its detail information such as market status and potential growth is uncertain. However, if the mass production of versatile ultra-high-performance equipment such as quantum computers and the necessity of rubidium use in the equipment are confirmed, there is a possibility that the rubidium market will expand in the future. Rubidium is often found together with lithium, beryllium, and cesium, and may be present in granite containing minerals such as lepidolite and pollucite, as well as in seawater and industrial waste. Several technologies such as acid leaching, roasting, solvent extraction, and adsorption are used to recover rubidium. The maximum recovery efficiency of the rubidium from the sources and the processing above is generally high, but, in many practices, rubidium is not the main recovery target, and therefore the actual recovery effects should depend on presence of other valuable components or impurities, together with recovery costs, energy consumption, environmental issues, etc. In conclusion, although the current production and consumption of rubidium are limited, with consideration of the possible market fluctuations according to the emergence of large-scale demand sources, etc., further investigations by related institutions should be necessary.

• Transactions on Electrical and Electronic Materials
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• v.18 no.2
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• pp.89-92
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• 2017

The performance of three-layered organic light-emitting diodes (OLEDs) was investigated using TPD hole-transport and injection layers, Teflon-AF, and the electron-injection layer of $Li_2CO_3$ and LiF. The OLEDs were manufactured in a structure of TPD/$Alq_3$/LiF, TPD/$Alq_3$/$Li_2CO_3$, and AF/$Alq_3$/LiF using low-molecular organic materials. In three different three-layered OLEDs, it was found that the device with the TPD/$Alq_3$/LiF structure shows higher performance in maximum luminance, and maximum external quantum efficiency compared to those of the device with TPD/$Alq_3$/$Li_2CO_3$ and TPD/$Alq_3$/LiF by 35% and 17%, and 193% and 133%, respectively. It is thought that the combined LiF/Al cathode contributes to a reduced work function and improves an electrical conduction mechanism due to the electron injection rather than the hole transport, which then increases a recombination rate of charge carriers.