• Title/Summary/Keyword: quantum

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Quantum Transition Properties of Quasi-Two Dimensional Si System in Electron Deformation Potential Phonon Interacting (전자 포텐셜 변형과 포논 상호작용에 의한 준 이차원 Si 구조의 전도 현상 해석)

  • Lee, Su-Ho;Kim, Young-Mun;Kim, Hai-Jai;Joo, Seok-Min
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.66 no.3
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    • pp.129-134
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    • 2017
  • We investigated theoretically the quantum optical transition properties of Si, in quasi 2-Dimensinal Landau splitting system, based on quantum transport theory. We apply the quantum transport theory (QTR) to the system in the confinement of electrons by square well confinement potential under linearly polarized oscillating field. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). In order to analyze the quantum transition, we compare the temperature and the magnetic field dependencies of the QTLW and the QTLS on four transition processes, namely, the intra-leval transition process, the inter-leval transition process, the phonon emission transition process and the phonon absorption transition process.

The Fluorescence Immunoassay of lung Cancer Serum Diomarkers using Quantum dots

  • Kang, Ji-Min;Ahn, Jin-Seok;Kim, Jin-Hoon;Kong, Won-Ho;Park, Keun-Chil;Kim, Won-Seog;Seo, Soo-Won
    • Journal of Biomedical Engineering Research
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    • v.30 no.2
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    • pp.122-128
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    • 2009
  • Cancer serum biomarkers have advanced our ability to more accurately predict tumor classification, prognostic/metastatic potential, and response potential to novel chemotherapies. Serum amyloid A (SAA) and Vascular endothelial growth factor (VEGF) have potential utility as a serum biomarker for lung cancer. Quantum dots, nanometer-sized crystals, have a high quantum yield, sensitivity, and pronounced photostability. The properties of quantum dots can be efficiently applied to the detection of serum biomarkers in immunoassays as fluorescent probe. We used quantum dots as fluorescent probes in immunoassays and attempted to detect serum amyloid A and vascular endothelial growth factor as serum biomarkers of lung cancer. This fluorescence immunoassay based on the properties of quantum dots is applicable to the detection of serum biomarkers for lung cancer. The fluorescence immunoassay with quantum dots should allow the efficient and specific detection of serum amyloid A (SAA) for the possible diagnosis of lung cancer.

Compatibility of Continuous Rabi Oscillation and Discontinuous Quantum Jumps (연속적 라비 진동과 불연속적 양자도약의 양립성)

  • Chough, Young-Tak;Kim, Kisik
    • Korean Journal of Optics and Photonics
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    • v.23 no.2
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    • pp.77-86
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    • 2012
  • The connection between the continuousness of Rabi oscillation and the discontinuity of quantum jumps has long remained one of the conceptual difficulties since the discovery of the quantum physical paradigm. In this study, however, we demonstrate that the behavior of the atom-field composite system gradually changes from the continuous Rabi interaction to the discontinuous quantum jumps as the atom-field coupling strength is reduced. The reduction occurs through enlarging the quantization volume of the mode so that the mode approaches one of the infinitely many modes of the thermal background.

Simulation of Optical Characteristics of 1.3 μm GaAs-Based GaAsSb/InGaAs and GaAsSb/InGaNAs Quantum Well Lasers for Optical Communication (광통신용 GaAs 기반 1.3 μm GaAsSb/InGaAs와 GaAsSb/InGaNAs 양자우물 레이저의 광학적특성 시뮬레이션)

  • Park, Seoung-Hwan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.1
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    • pp.1-6
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    • 2011
  • Optical gain characteristics of $1.3{\mu}m$ type-II GaAsSb/InGaNAs/GaAs trilayer quantum well structures were studied using multi-band effective mass theory. The results were compared with those of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structures. In the case of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure, the energy difference between the first two subbands in the valence band is smaller than that of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. Also, $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure shows larger optical gain than $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. This means that GaAsSb/InGaNAs/GaAs system is promising as long-wavelength optoelectronic devices for optical communication.

The Effect of Quantum Well Structure on the Characteristics of GaN-based Light-Emitting Diode (양자 우물 구조가 GaN 기반 LED 특성에 미치는 영향)

  • Lee, Jae-Hyun;Yeom, Keesoo
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.10a
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    • pp.251-254
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    • 2012
  • In this paper, the output characteristics of GaN-based LED considering quantum well structure are analyzed. The basic structure of the LED consists of active region of GaN barrier and InGaN quantum well between AlGaN EBL(Electron Blocking Layer) and AlGaN HBL(Hole Blocking Layer) on GaN buffer layer. The output power, internal quantum efficiency characteristics of LED active region considering thickness of quantum well, number of quantum well and doping of barrier are analyzed using ISE-TCAD.

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Active Layer Simulation for the Tolerance of Epi-layer Thickness at CaAs/AlGaAs 3-Quantum Well Quantum Cascade Lasers (GaAs/AlGaAs 3-Quantum Well 양자폭포레이저 (Quantum Cascade Lasers)에서 허용되는 에피정밀도를 위한 활성영역 모의실험)

  • Lee, Hye-Jin;Lee, Cheng-Ming;Han, Il-Ki;Lee, Jung-Il;Kim, Moon-Deock
    • Journal of the Korean Vacuum Society
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    • v.16 no.4
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    • pp.273-278
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    • 2007
  • For the simulation of active region in the quantum cascade lasers (QCL), we solved Schrodinger equation utilizing Runge-Kutta method and Shotting method. Wavelength, phonon resonant energy, and dipole matrix element were simulated with the variation of active region thickness. As a result of such simulation, it was suggested the tolerance range of epi-layer thickness error when 3-quantum well QCL structures are grown.