• Transactions on Electrical and Electronic Materials
• /
• 제2권1호
• /
• pp.32-38
• /
• 2001

A new small sized Lateral Trench electrode Insulated Gate Bipolar Transistor(LTEIGBT) was proposed to improve the characteristics of conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire electrode of LTEIGBT was replace with trench-type electrode. The LTEIGBT was designed so that the width of device was no more than 19 ㎛. The Latch-up current densities of LIGBT, LTIGBT and the proposed LTEIGBT were 120A/㎠, 540A/㎠, and 1230A/㎠, respectively. The enhanced latch-up capability of the LTEIGBT was obtained through holes in the current directly reaching the cathode via the p+ cathode layer underneath n+ cathode layer. The forward blocking voltage of the LTEIGBT is 130V. Conventional LIGBT and LTIGBT of the same size were no more than 60V and 100V, respectively. Because the the proposed device was constructed of trench-type electrodes, the electric field moved toward trench-oxide layer, and punch through breakdown of LTEIGBT is occurred, lately.

• 소성∙가공
• /
• 제11권3호
• /
• pp.262-268
• /
• 2002

The bending process for the rectangular and circular curled tube can be developed by the hot metal extrusion machine with the multiple punches moving in the different velocity. The bending phenomenon has been known to be occurred by the different of velocity at the die exit. The difference of velocity at the die exit section can be obtained by the different velocity of billets through the multi-hole container and by the cohesion of billet Inside the porthole die chamber. The bending phenomenon can be controlled by the two variables, the one of them is the difference of velocity at the die edit section by the different velocity of billets through the multi-hole container The other is the difference by the different hole diameter The results of the experiment show that the rectangular curved tube can be formed by the extrusion process, that the curvature of the curved product can be controlled by the velocity of punch and the diameter of container hole, that the defects such as the distortion of section and the thickness change of the wall of tube and the folding and wrinkling of thin tube did not happen after the extra-bending processing by the extrusion bending machine.

• 전자공학회논문지D
• /
• 제35D권8호
• /
• pp.8-14
• /
• 1998

A new process is developed to improve the electrical characteristics of high .beta. and low saturation voltage power transistor for lamp solenoid driver application. To prevent punch-through breakdown, appropriate combination of base doping and base width is necessary in the range of operating voltage of the circuit. The optimum values of base doping and sheet resistance are $Q_{D}$= $1.5{\times}10^{14}$atoms/$\textrm{cm}^2$ and $R_{s}$= 350 $\Omega/\square$ base wodtj $W_{B}$= $2.5{\mu}m$respectively. Under this condition it is possible to control $\beta$ of the transistor to 1500, maintaining $VB_{CBO}$ =200V. To reduce scattered distribution of .beta. of the devices on the wafer, it is necessary to improve emittter predeposition process. As a result, scattered distribution of .beta. of the devices on the wafer was reduced to 1/6 by using the new process. To improve collector to emitter forward voltage drop, $V_{ECF}$ of damper diode, an additional silicon etching process is used, which resulted in improving the value of $V_{eCF}$ from 2.8 V to 1.8V. With the suggested process superior device performance and higher yield are achieved.

• Journal of Power Electronics
• /
• 제9권3호
• /
• pp.464-471
• /
• 2009

This paper introduces a new Motion-$SPM^{TM}$ (Smart Power Modules) module in Single In-line Package (SIP), which is a fully optimized intelligent integrated IGBT inverter module for up to 1kW low power motor drive applications. This module offers a sophisticated, integrated solution and tremendous design flexibility. It also takes advantage of pliability for the arrangement of heat-sink due to two types of lead forms. It comes to be realized by employing non-punch-through (NPT) IGBT with a fast recovery diode and highly integrated building block, which features built-in HVICs and a gate driver that offers more simplicity and compactness leading to reduced costs and high reliability of the entire system. This module also provides technical advantages such as the optimized cost effective thermal performances through IMS (Insulated Metal Substrate), the high latch immunity. This paper provides an overall description of the Motion-$SPM^{TM}$ in SIP as well as actual application issues such as electrical characteristics, thermal performance, circuit configurations and power ratings.

• 한국전기전자재료학회논문지
• /
• 제14권7호
• /
• pp.546-550
• /
• 2001

A new Lateral Trench Insulated Gate Bipolar Transistor(LTIGBT) with p$^{+}$ diverter was proposed to improve the characteristics of the conventional LTIGBT. The forward blocking voltage of the proposed LTIGBT with p$^{+}$ diverter was about 140V. That of the conventional LTIGBT of the same size was 105V. Because the p$^{+}$ diverter region of the proposed device was enclosed trench oxide layer, he electric field moved toward trench-oxide layer, and punch through breakdown of LTIGBT with p$^{+}$ diverter was occurred, lately. Therefore, the p$^{+}$ diverter of the proposed LTIGBT didn't relate to breakdown voltage in a different way the conventional LTIGBT. The Latch-up current densities of the conventional LTIGBT and proposed LTIGBT were 540A/$\textrm{cm}^2$, and 1453A/$\textrm{cm}^2$, respectively. The enhanced latch-up capability of the proposed LTIGBT was obtained through holes in the current directly reaching the cathode via the p$^{+}$ divert region and p$^{+}$ cathode layer beneath n$^{+}$ cathode layer./ cathode layer.

• 소성∙가공
• /
• 제17권8호
• /
• pp.586-593
• /
• 2008

In warm press forming of magnesium alloy sheet, it is important to control the sheet temperature by heating the sheet in closed die. When forming a commercial AZ31 magnesium alloy sheets which are 0.5mm and 1.0mm thick, respectively, time arriving at target temperature and temperature variation in magnesium alloy sheet have been investigated. The deep drawing process with rectangular shape alone at the first stage and with both circular and rectangular shapes at the second stage was employed. At the first stage, through deep drawing process with rectangular shape alone according to various forming temperature($150{\sim}350^{\circ}C$) and velocity($0.1{\sim}1.0mm/s$), optimum forming condition was obtained. At the second stage, deep drawing process with the circular and rectangular shapes were performed following deep drawn square cups with Limited Drawing Height(LDH) obtained at the first stage. Here, clearance which is defined a gap between the die and the punch including sheet was set to ratio of 20, 40 and 100% to thickness in sheet. Accordingly, temperature, velocities, and clearances suitable for forming were suggested through investigating the thickness variation of the product.

• 한국소성가공학회:학술대회논문집
• /
• 한국소성가공학회 2005년도 춘계학술대회 논문집
• /
• pp.101-105
• /
• 2005

Hemming process, composed of flanging, pre-hemming and main hemming, is the last one of a series of forming processes conducted on the automotive panels, having a great influence on the outward appearance of them. The hem quality can be quantitatively defined by the hemming defects including turn-down, warp and roll-in. However, it is difficult to evaluate and predict the hem quality through the experimental measurement or the numerical calculation since the size of defects is very small. This study is focused on how to simulate in the finite element analysis (FEA) the same conditions as in the experiment. The FEA result on turn-down, that was obtained from a finite element model including the spring element linked to the flanging pad, had a good correlation with the experimental data. It was found that the radius of curvature of the flange deeply affects the final hem quality and therefore high rigidity of forming tools and tight assembling tolerance are highly recommended. An over-stroke of the main hemming punch is also proposed to reduce the turn-down.

• 대한두개안면성형외과학회지
• /
• 제20권3호
• /
• pp.203-206
• /
• 2019

Merkel cell carcinoma (MCC) is a rare and highly aggressive neuroectodermal carcinoma arising from mechanoreceptor Merkel cells. Multiple MCCs are even rarer. We report a case of two independent MCCs simultaneously present in the cheek of a patient, which were effectively and esthetically treated using a cheek flap. Punch biopsy performed in a 60-year-old woman admitted with a chief complaint of two skin-colored hard nodules in her left cheek, accompanied by an itching sensation, was suggestive of MCC. Accordingly, we performed sentinel lymph node biopsy through the modified Blair incision under general anesthesia, in cooperation with the head and neck surgery department. The defect was covered with a cheek flap by slightly extending the existing incision following wide excision with a safety margin of 1 cm. This paper is significant in that it introduces an effective reconstruction technique that maintains function using a cheek flap for the management of this rare case. In addition, this paper is the first to classify multiple MCCs according to the time of onset. We believe that this paper presents an effective alternative reconstruction technique with sentinel node biopsy through the modified Blair incision.

• 콘크리트학회논문집
• /
• 제13권5호
• /
• pp.430-437
• /
• 2001

최근 교량상 통과하중의 증대 및 교통량증대로 공용중의 교량의 바닥판은 가혹한 하중하에서 펀칭등의 파괴가 발생하여 사용상에 중대한 영향을 미치고 있는 실정이다. 이로 인한 바닥의 보수나 교체공사등이 급격히 증가되어 신속 간편하며, 보수시 교통통제를 최소화 할 수 있고 또한 신뢰성이 있는 바닥판 시공법이 필요하게 되었다. 따라서 본 연구의 목적은 교량구조물 바닥판의 신설/교체공사에 있어서 신속한 시공과 신뢰성 있는 품질관리, 교통통제의 최소화를 위해 공장 또는 제작장에서 바닥판 구조물의 주부재로서 I형강을 배치하고 거푸집(저판)을 조립하여 패널을 제작한 후 현장에서는 패널의 설치 및 연결부에 콘크리트를 타설하여 바닥판을 시공하는 공법을 개발하는데 그 목적이 있다. 따라서 본 연구에서는 I형강 합성바닥판 개발에 필요한 I형강 자체의 역학적, 구조적 특성에 대하여 기초적인 물성 실험인 정적. 피로성능 실험을 수행하였으며, I형강 합성바닥판 및 유사한 성능의 바닥판 시험체를 제작하여 정적실험을 수행 비교하였다. 그리고 본 실험 연구 결과 I형강 합성바닥판의 우수성을 확인하였다.

• 반도체디스플레이기술학회지
• /
• 제13권3호
• /
• pp.45-50
• /
• 2014

In this paper, we propose a super-junction MOSFET (SJ MOSFET) fabricated through a simple pillar forming process by varying the Si epilayer thickness and doping concentration of pillars using SILVACO TCAD simulation. The design of the SJ MOSFET structure is presented, and the doping concentration of pillar, breakdown voltage ($V_{BR}$) and drain current are analyzed. The device performance of conventional Si planar metal-oxide semiconductor field-effect transistor(MOSFET), Si SJ MOSFET, and SiGe SJ MOSFET was investigated. The p- and n-pillars in Si SJ MOSFET suppressed the punch-through effect caused by drain bias. This lead to the higher $V_{BR}$ and reduced on resistance of Si SJ MOSFET. An increase in the thickness of Si epilayer and decrease in the former is most effective than the latter. The implementation of SiGe epilayer to SJ MOSFET resulted in the improvement of $V_{BR}$ as well as drain current in saturation region, when compared to Si SJ MOSFET. Such a superior device performance of SiGe SJ MOSFET could be associated with smaller bandgap of SiGe which facilitated the drift of carriers through lower built-in potential barrier.