• 제목/요약/키워드: punch-through

검색결과 236건 처리시간 0.028초

유한요소법을 이용한 전단 메카니즘에 관한 연구 (A Study on Shearing Mechanism by FEM)

  • 정성훈;강정진;오수익
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 1995년도 춘계학술대회논문집
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    • pp.211-223
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    • 1995
  • The purpose of the present study is to examine shearing mechanism through rigidplastic finite element analysis. Difficulties arise in simulating shearing process due tothe narrow shear band formation andlackof proper fracture resolve these difficulties by using adaptive mesh generation crriterion. The simulation results are obtained for various punch clearances and these are compared with existing experimental results. It is shown that FEM simulation technique can be used to further understand the shearing mechanism.

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와이어 컷 방전가공에서 방전가공횟수가 파인 블랭킹 금형과 제품에 미치는 영향 (An Effect of Number of Passes in Wire-Cut Electric Discharge Machining on Fine Blanking Dies and Products)

  • 유헌일;김세환;최계광
    • 소성∙가공
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    • 제6권3호
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    • pp.192-202
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    • 1997
  • This study presents an effect of number of passes in wire-cut electric discharge machining on fine blanking dies and products. Three part fine blanking dies were produced by the difference of numbers of passes discharge machining. Brake pad was produced, through the die produced like that, the objective of this study is the improvement in surface roughness of die block and punch, life extension of die block, the decrease of second fracture dimensions, the rise of productive.

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낮은 온-저항과 빠른 스위칭 특성을 갖는 2500V급 IGBTs (2500V IGBTs with Low on Resistance and Faster Switching Characteristic)

  • 신사무엘;구용서;원종일;권종기;곽재창
    • 전기전자학회논문지
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    • 제12권2호
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    • pp.110-117
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    • 2008
  • 본 연구는 전력용 스위칭 소자로 널리 활용되고 있는 IGBT(Insulated Gate Bipolar Transistor)소자로서 NPT(Non Punch Through) IGBT 구조에 기반 한 새로운 구조의 IGBT를 제안하였다. 제안된 구조는 기존 IGBT 구조의 P-베이스 영역 우측 부분에 N+를 도입함으로 N-드리프트 영역의 정공분포를 N+영역으로 밀집시켜 턴-오프 시 정공의 흐름을 개선, 기존 구조보다 더 빠른 턴-오프 시간과 더 낮은 순방향 전압강하를 갖는 구조이다. 또한 P+를 게이트 우측 하단에 형성함으로써 순방향 전압 강하 특성을 개선시키기 위해 도입한 캐리어 축적 층인 N+에 의해 발생하는 낮은 래치-업 특성과 낮은 항복 전압 특성을 개선시킨 구조이다. 시뮬레이션 결과 제한된 구조의 턴-오프와 순방향 전압강하는 기존 구조대비 각각 0.3us, 0.5V 향상된 특성을 보였다.

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Effect of water jetting parameters on the penetration behavior of jack-up spudcan in surficial sand condition

  • Han, Dong-Seop;Kim, Seung-Jun;Kim, Moo-Hyun
    • Ocean Systems Engineering
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    • 제5권1호
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    • pp.1-19
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    • 2015
  • The water jetting system for a jack-up spudcan requires the suitable design considering the platform/spudcan particulars, environments, and soil conditions, either the surficial clay or surficial sand. The usage of water jetting depends critically on soil conditions. The water jetting is usually used for the smooth and fast extraction of the spudcan in the surficial clay condition. It is also required for inserting spudcan up to the required depth in the surficial sand condition, which is investigated in this paper. Especially, it should be very careful to use the water jetting during an installation of spudcan in the surficial sand condition, because there is a risk of overturning accident related to the punch-through. Therefore, in this study, the effect of water jetting flow rate and time on the change of soil properties and penetration resistance is analyzed to better understand their interactions and correlations when inserting the spudcan with water jetting in surficial sand condition. For the investigation, a wind turbine installation jack-up rig (WTIJ) is selected as the target platform and the multi layered soil (surficial sand overlaying clays) is considered as the soil condition. The environmental loading and soil-structure interaction (SSI) analysis are performed by using CHARM3D and ANSYS. This kind of investigation and simulation is needed to decide the proper water jetting flow rate and time of spudcan for the given design condition.

컴퓨터 시뮬레이션에 의한 SPS의 몰드크기에 따른 SiC-ZrB2 복합체의 소결특성 연구 (A Study on Sintering Properties of a SiC-ZrB2 Composite According to Mold Size of SPS Through Computer Simulation)

  • 신용덕;이정훈;진범수;강명균
    • 전기학회논문지
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    • 제61권7호
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    • pp.988-991
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    • 2012
  • The computer simulation was performed to confirm distribution of current and power density according to inner diameter of graphite mold of SPS(Spark Plasma Sintering). When the inner diameters of a graphite mold are varied $10mm{\Phi}$, $20mm{\Phi}$, $30mm{\Phi}$ and $40mm{\Phi}$, the more the inner diameter of graphite mold is decreased, the more the current density of punch section is increased. Because the electrical resistivity of the SiC-$ZrB_2$ specimen section($7.77{\times}10^{-4}{\Omega}{\cdot}cm$) was lower than the electrical resistivity($6.00{\times}10^{-3}{\Omega}{\cdot}cm$) of graphite section, the current density and power density of specimen section was higher than those of graphite section. It is considered that a SiC-$ZrB_2$ composite is sintered by more Joule heat of specimen section than that of mold and punch section. The current and power density distribution of a SiC-$ZrB_2$ composite can be predicted through computer simulation when SPS is conducted, and an electrical resistivity of the SiC-$ZrB_2$ composite is main element of SPS.

로컬 도핑을 이용한 수평형 트렌치 전극 파워 MOSFET의 순방향 블로킹특성 개선 (The Improvement in the Forward Blocking Characteristics of Lateral Trench Electrode Power MOSFET by using Local Doping)

  • 김대종;김대원;성만영;이동희;강이구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.19-22
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    • 2003
  • In this paper, a new small size Lateral Trench Electrode Power MOSFET with local doping is proposed. This new structure is based on the conventional lateral power MOSFET. The entire electrodes of proposed device are placed in trench oxide. The forward blocking voltage of the proposed device is improved by 3.3 times with that of the conventional lateral power MOSFET. The forward blocking voltage of proposed device is about 500V. At the same size, a increase of the forward blocking voltage of about 3.3 times relative to the conventional lateral power MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide respectively, the electric field in the device are crowded to trench oxide. And because of the structure which has a narrow drain doping width, the punch through breakdown can be occurred in higher voltage than that of conventional lateral power MOSFET. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.

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요인분석법을 이용한 파인 블랭킹 공정의 파단면 최소화에 관한 연구 (A study on minimization of fracture surface in fine blanking process using factorial analysis)

  • 이범순;김옥환
    • Design & Manufacturing
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    • 제15권1호
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    • pp.41-47
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    • 2021
  • The Fine Blanking process is an effective precision shearing process that can obtain a smooth cutting surface and high product precision through a single blanking process. It is widely used in various manufacturing fields. However, shearing through this fine blanking process is only intended to minimize burrs, die rolls and fracture surfaces and does not completely remove them. Therefore, it is necessary to study the minimization of burrs, die rolls and fracture surfaces in the fine blanking process. In this study, a study was conducted on the relationship between the fracture surface and process conditions that occurred during product production using the fine blanking process. For this purpose, the shape of the V-ring indenter, the distance to the punch, and the pressure force, clearance, shear rate, and physical properties of the material were selected as process and design variables, and the relationship with the fracture surface according to each process and design condition was tested. It was analyzed through the Experimental Design Method.

하이드로 피어싱에서의 변형 특성 연구 (A study on deformation characteristics of tube hydro-piercing process)

  • 최성기;안익태;문영훈
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2003년도 추계학술대회논문집
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    • pp.237-240
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    • 2003
  • Deformation surrounding the hole in the tube during the hydro-piercing process has been investigated in this study. The tube is expanded and internally pressurized between upper and lower dies, and a piercing punch is driven forcefully through a cross passage in the die and through the wall of the tube. The pressurized fluid within the tube provides support to the wall of the tube during a piercing step to form a hole in the tube having less deformation surrounding the hole in the tube. The deformation area may be fully retracted to a substantially flat form or partially retracted to a countersunk form. In this study, a mathematical model that can predict deformation surrounding the hole has been proposed and experimentally verified by actual hydro-piercing test.

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I-형강 합성바닥판의 정적 성능비교 (Experimental Comparison for Static Performance of I-beam Concrete Slab)

  • 박길용;박창규;정영수
    • 한국콘크리트학회:학술대회논문집
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    • 한국콘크리트학회 2002년도 봄 학술발표회 논문집
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    • pp.947-952
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    • 2002
  • Recently, there have been increased much concerns about repair and rehabilitation works for aged concrete structures. In particular, it is known that due to repeated overburden vehicle there are significantly increasing number of aged concrete bridge slabs, which are strongly needed to construct and rehabilitate by innovative construction method. The objective of this research is to develop the new construction method of concrete slab in bridge structure, which can contribute to minimize the traffic congestion during the repair and rehabilitation works of aged concrete slab, and can also sufficiently assure the quality through the minimization of in-situ works at the site. I-beams with punch holes, which are substituted instead of main reinforcing steels in concrete slabs, will be manufactured in accordance with the specification in the factory, and will be preassembled into the panel. After erecting the preassembled panels in the site, concrete will be poured into the slab panel. This research is to investigate physical properties of I-Beam concrete slab through static test.

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High Speed Sram Transistor Performance 향상에 관한 연구

  • 남궁현;황덕성;장형순;박순병;홍순혁;김상종;김석규;김기준;노용한
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.97-98
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    • 2006
  • For high performance transistor in the 0.14um generation, high speed sram is using a weak region of SCE(Short Channel Effect). It causes serious SCE problem (Vth Roll-Off and Punch-Through etc). This paper shows improvement of Vth roll-off and Ion/Ioff characteristics through high concentration Pocket implant, LDD(Light Dopped Dram) and low energy Implant to reduce S/D Extension resistance. We achieve stabilized Vth and Improved transistor Ion/Ioff performance of 10%.

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