• 제목/요약/키워드: pumping-current

검색결과 187건 처리시간 0.032초

Design of a CMOS Frequency Synthesizer for FRS Band (UHF FRS 대역 CMOS PLL 주파수 합성기 설계)

  • Lee, Jeung-Jin;Kim, Young-Sik
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • 제28권12호
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    • pp.941-947
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    • 2017
  • This paper reports a fractional-N phase-locked-loop(PLL) frequency synthesizer that is implemented in a $0.35-{\mu}m$ standard CMOS process and generates a quadrature signal for an FRS terminal. The synthesizer consists of a voltage-controlled oscillator(VCO), a charge pump(CP), loop filter(LF), a phase frequency detector(PFD), and a frequency divider. The VCO has been designed with an LC resonant circuit to provide better phase noise and power characteristics, and the CP is designed to be able to adjust the pumping current according to the PFD output. The frequency divider has been designed by a 16-divider pre-scaler and fractional-N divider based on the third delta-sigma modulator($3^{rd}$ DSM). The LF is a third-order RC filter. The measured results show that the proposed device has a dynamic frequency range of 460~510 MHz and -3.86 dBm radio-frequency output power. The phase noise of the output signal is -94.8 dBc/Hz, and the lock-in time is $300{\mu}s$.

Numerical Study on Comparison of Serpentine and Parallel Flow Channel in High-temperature Proton Exchange Membrane Fuel Cells (고온형 고분자전해질형 연료전지에서의 사형 유로와 평행 유로 성능비교에 대한 수치해석적 연구)

  • AHN, SUNGHA;OH, KYEONGMIN;JU, HYUNCHUL
    • Transactions of the Korean hydrogen and new energy society
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    • 제29권1호
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    • pp.41-55
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    • 2018
  • General polymer electrolyte fuel cell (PEMFC) operates at less than $80^{\circ}C$. Therefore liquid phase water resulting from electrochemical reaction accumulates and floods the cell which in turn increases the mass transfer loss. To prevent the flooding, it is common to employ serpentine flow channel, which can efficiently export liquid phase water to the outlet. The major drawback of utilizing serpentine flow channel is the large pressure drop that happens between the inlet and outlet. On the other hand, in the high temperature polymer electrolyte fuel cell (HT-PEMFC), since the operating temperature is 130 to $180^{\circ}C$, the generated water is in the state of gas, so the flooding phenomenon is not taken into consideration. In HT-PEMFCs parallel flow channel with lower pressure drop between the inlet and outlet is employed therefore, in order to circulate hydrogen and air in the cell less pumping power is required. In this study we analyzed HT-PEMFC's different flow channels by parallel computation using previously developed 3-D isothermal model. All the flow channels had an active area of $25cm^2$. Also, we numerically compared the performance of HT-PEMFC parallel flow channel with different manifold area and Rib interval against the original serpentine flow channel. Results of the analysis are shown in the form of three-dimensional contour polarization curves, flow characteristics in the channel, current density distribution in the Membrane, overpotential distribution in the catalyst layer, and hydrogen and oxygen concentration distribution. As a result, the performance of a real area fuel cell was predicted.

Progress in Novel Oxides for Gate Dielectrics and Surface Passivation of GaN/AlGaN Heterostructure Field Effect Transistors

  • Abernathy, C.R.;Gila, B.P.;Onstine, A.H.;Pearton, S.J.;Kim, Ji-Hyun;Luo, B.;Mehandru, R.;Ren, F.;Gillespie, J.K.;Fitch, R.C.;Seweel, J.;Dettmer, R.;Via, G.D.;Crespo, A.;Jenkins, T.J.;Irokawa, Y.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제3권1호
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    • pp.13-20
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    • 2003
  • Both MgO and $Sc_2O_3$ are shown to provide low interface state densities (in the $10^{11}{\;}eV^{-1}{\;}cm{\;}^{-2}$ range)on n-and p-GaN, making them useful for gate dielectrics for metal-oxide semiconductor(MOS) devices and also as surface passivation layers to mitigate current collapse in GaN/AlGaN high electron mobility transistors(HEMTs).Clear evidence of inversion has been demonstrated in gate-controlled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high temperature implant activation anneal show a total surface state density of $~3{\;}{\times}{\;}10^{12}{\;}cm^{-2}$. On HEMT structures, both oxides provide effective passivation of surface states and these devices show improved output power. The MgO/GaN structures are also found to be quite radiation-resistant, making them attractive for satellite and terrestrial communication systems requiring a high tolerance to high energy(40MeV) protons.

Drainage Control and Prediction of Slope Stability by GIS-based Hydrological Modeling at the Large Scale Open Pit Mine (GIS에 의한 대규모 노천광에서의 배수처리 및 사면안정 예측)

  • SunWoo, Choon;Choi, Yo-Soon;Park, Hyeong-Dong;Jung, Yong-Bok
    • Tunnel and Underground Space
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    • 제17권5호
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    • pp.360-371
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    • 2007
  • This paper presents an application of drainage control and slope stability by GIS-based hydrological modeling to control the surface water from an operational point of view. This study was carried out on a region of Pasir open-pit coal mine, Indonesia. A detailed topographical survey was performed at the study area to generate a reliable DEM (Digital Elevation Model). Hydrology tools implemented in ArcGIS 9.1 were used to extract the characteristics of drainage system such as flow direction, flow accumulation and catchment area from DEM. The results of hydrological modeling and spatial analysis showed that current arrangement of pumping facility is not suitable and some vulnerable places to erosion exist on the bench face due to concentrated surface runoff. Finally, some practical measures were suggested to optimize the design of drainage system and to monitor the slope stability by the surface water management at the study region during heavy rainfall.

Residential Humidifying Elements Comprizing Horizontal Corrugated Channels (수평 코류게이트 채널로 구성된 가정용 가습 소자)

  • Kim, Nae-Hyun
    • Transactions of the Korean Society of Mechanical Engineers B
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    • 제41권9호
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    • pp.579-586
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    • 2017
  • In this study, new materials and shapes for a residential humidifying element were investigated. These elements could replace the current Japanese folded-type rayon/PE elements. Samples were taken from three different materials - rayon/PET (50:50), kraft/PET (40:60), kraft/PET/carbon. Results showed that the humidification efficiencies of the new samples were lower than those of the Japanese product. The efficiencies were 59% for the Japanese product (rayon/PET), 62% for kraft/PET and 84% for kraft/PET/carbon. This could be due to lower rayon or kraft content in the present samples than that in the Japanese product. However, pressure drops in the present samples were significantly lower than that in the Japanese product, due to improved channel configuration. The humidification capacity at the same pumping power ($j_m/f^{1/3}$) was 60% to 82% higher for the kraft/PET/carbon sample compared with the Japanese product. Furthermore, the results are compared with theoretical predictions.

중성빔 식각을 이용한 Metal Gate/High-k Dielectric CMOSFETs의 저 손상 식각공정 개발에 관한 연구

  • Min, Gyeong-Seok;O, Jong-Sik;Kim, Chan-Gyu;Yeom, Geun-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.287-287
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    • 2011
  • ITRS(international technology roadmap for semiconductors)에 따르면 MOS (metal-oxide-semiconductor)의 CD(critical dimension)가 45 nm node이하로 줄어들면서 poly-Si/SiO2를 대체할 수 있는 poly-Si/metal gate/high-k dielectric이 대두되고 있다. 일반적으로 metal gate를 식각시 정확한 CD를 형성시키기 위해서 plasma를 이용한 RIE(reactive ion etching)를 사용하고 있지만 PIDs(plasma induced damages)의 하나인 PICD(plasma induced charging damage)의 발생이 문제가 되고 있다. PICD의 원인으로 plasma의 non-uniform으로 locally imbalanced한 ion과 electron이 PICC(plasma induced charging current)를 gate oxide에 발생시켜 gate oxide의 interface에 trap을 형성시키므로 그 결과 소자 특성 저하가 보고되고 있다. 그러므로 본 연구에서는 이에 차세대 MOS의 metal gate의 식각공정에 HDP(high density plasma)의 ICP(inductively coupled plasma) source를 이용한 중성빔 시스템을 사용하여 PICD를 줄일 수 있는 새로운 식각 공정에 대한 연구를 하였다. 식각공정조건으로 gas는 HBr 12 sccm (80%)와 Cl2 3 sccm (20%)와 power는 300 w를 사용하였고 200 eV의 에너지로 식각공정시 TEM(transmission electron microscopy)으로 TiN의 anisotropic한 형상을 볼 수 있었고 100 eV 이하의 에너지로 식각공정시 하부층인 HfO2와 높은 etch selectivity로 etch stop을 시킬 수 있었다. 실제 공정을 MOS의 metal gate에 적용시켜 metal gate/high-k dielectric CMOSFETs의 NCSU(North Carolina State University) CVC model로 effective electric field electron mobility를 구한 결과 electorn mobility의 증가를 볼 수 있었고 또한 mos parameter인 transconductance (Gm)의 증가를 볼 수 있었다. 그 원인으로 CP(Charge pumping) 1MHz로 gate oxide의 inteface의 분석 결과 이러한 결과가 gate oxide의 interface trap양의 감소로 개선으로 기인함을 확인할 수 있었다.

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Estimating Exploitable Groundwater Amount in Musimcheon Watershed by Using an Integrated Surface Water-Groundwater Model (지표수지하수 통합모형을 이용한 무심천 유역의 지하수 개발가능량 산정)

  • Chung, Il-Moon;Lee, Jeong-Woo;Kim, Nam-Won
    • Economic and Environmental Geology
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    • 제44권5호
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    • pp.433-442
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    • 2011
  • In Korea, groundwater management has been conducted based on the estimation of annual average of groundwater recharge. Since groundwater recharge and surface water-groundwater interactions show spatiotemporal variation, continuous monitoring and dynamic analysis must be carried out to evaluate the sustainability of groundwater resources. In this study, SWAT-MODFLOW, an integrated surface water-groundwater model was used to analyze surface-groundwater interactions for various groundwater pumping scenarios in Musimcheon watershed. When current usage is applied, the baseflow reduction is about 16%, and annual averaged storage reduction is about 27 mm for whole watershed. As a holistic approach to groundwater sustainability considers the hydrological, ecological, socioeconomic, technological aspects of groundwater utilization, the exploitable groundwater should be determined by physical analysis as well as social compromise in a community.

Operational and Thermal Characteristics of a Microchip Yb:YAG Laser (마이크로 칩 Yb:YAG 레이저의 동작 및 열적 특성)

  • Moon, Hee-Jong;Hong, Sung-Ki;Lim, Chang-Hwan
    • Korean Journal of Optics and Photonics
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    • 제22권2호
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    • pp.96-101
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    • 2011
  • Operational and thermal characteristics of a thin disk Yb:YAG crystal with a thickness of 0.8 mm were studied using as a pumping source a fiber-coupled 930 nm laser diode. The heat generated in the crystal was dissipated by placing both surfaces in contact with copper plates with central hole, and the dependence of the temperature change in the illuminated spot on hole size was investigated by measuring the spectral change of the lasing peaks. The slope efficiency and optical-to-optical efficiency with respect to the LD pump power were as high as 42.2% and 34.8%, respectively. The temperature at the illuminated spot increased with diode current and with increasing hole size of the copper plate. When the hole size considerably exceeded the crystal thickness, the temperature rise deviated from the linear increase at high pump power.

High Performance Control of SRM Drive System for Automobiles by C-dump Converter (C-dump Converter에 의한 차량용 SRM 구동 시스템의 고성능제어)

  • 김도군;윤용호;이태원;원충연;김영렬
    • The Transactions of the Korean Institute of Power Electronics
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    • 제8권6호
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    • pp.534-542
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    • 2003
  • Small electric motors in an automobile perform various tasks such as engine cooling, pumping, HVAC etc. At present, most of them are DC motors supplied by 12V or 24V batteries. However, DC motors suffer from low efficiency, life cycles and reliability. Therefore, there is a growing interest in substituting DC motors for advanced at motors including switched reluctance motors(SRM). Although there are several other forms SRM convertors, they are either unsatisfactory to the control performance or unsuitable for the 12V battery source. Especially, a conventional asymmetric converter of SRM provides the best flexible and effective control to the current waveform of SRM, but it has the most switches and produces conducting voltage drops across two power switches during SRM operation. For automotive applications with a 12V battery source, this circuit is inadequate. For considering the requirement for effective operation and simple structure of converter in the limited internal circumstance of automobiles, the author inclines toward selecting Modified C-dump converter and Energy efficient c-dump converter.

The Three-wavelength PR3+:YLF Laser at 604 nm 607 nm and 640 nm with Fabry-Perot Etalon

  • Jin, Long;Jin, Yu-Shi;Dong, Yuan;Li, Qing-Song;Yu, Yong-Ji;Li, Shu-Tao;Jin, Guang-Yong
    • Current Optics and Photonics
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    • 제2권5호
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    • pp.448-452
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    • 2018
  • A three-wavelength $Pr^{3+}:YLF$ laser at 604 nm, 607 nm and 640 nm simultaneously output by Fabry-Perot (F-P) etalon has been obtained. A 444 nm blue laser diode is used for pumping the $Pr^{3+}:YLF$ crystal, and a 0.1 mm F-P etalon is inserted in the resonator to select wavelength. The theoretical model of three-wavelength $Pr^{3+}:YLF$ laser is established, by adjusting the tilt angle of the etalon, the transmittances of the different wavelengths can be controlled, and the threshold values can be made to equalize by controlling the loss among different wavelengths. In the experiment, when the tilt angle of etalon is $9^{\circ}$ and the optimized length of resonator is 48 mm, the total output power of 25 mW at the three-wavelength is achieved at incident pump power of 7.5 W.