• Proceedings of the KIPE Conference
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• 2010.07a
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• pp.246-247
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• 2010

This paper deals with the water treatment of the leachate from sewage filled ground by a pulsed power technology. Leachate from sewage filled ground should be treated below regulation level of COD in order to prevent environmental pollution and usually treated by a chemical method. Among the pollutants mixed in the leachate, chemical compounds of benzene series are known to be difficult to break down, and need to use high cost treat methods. The treatment of the benzene compounds by high power pulsed power supply was studied. For the high-rate, cost-effective treatment of leachate, pulsed power supply should have high repetition rates and require switching devices of long lifetime. In order to meet the demands of the above condition, pulsed power generator based on semiconductor switches using IGBTs as primary switches were developed. The experimental results verified that benzene compounds can be treated effectively by high voltage electric pulses, and this fact indicates that the treatment method by pulsed power source is a promising substitute.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.675-675
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• 2006

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.33-33
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• 1998

• Journal of Soil and Groundwater Environment
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• v.18 no.1
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• pp.78-84
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• 2013

This study was conducted in order to evaluate the removal process for long-term contamination sources including chlorinated hydrocarbons (TCE and PCE) and explosive compounds (TNT, RDX, and HMX) in underground water using a pulsed-UV system. Crystallized cells containing the contaminants were placed 10, 20, and 40 cm away from a lamp that emits pulsed-UV rays in order to examine how the removal efficiency is influenced by the distance between the source of the light and the compounds. Chlorinated hydrocarbons were completely removed in 30 minutes with a distance of 10 cm, while PCE was completely removed even with a distance of 20 cm. In the case of explosive compounds, removal efficiencies slightly varied depending on the compounds. The majority of the compounds were perfectly removed with a contact time of 10 minutes. In particular, for RDX, the results showed that complete removal was obtained within one minute, regardless of the distance from the UV source. The amount of light energy is in inverse proportion to the distance, and thus the energy reaching the compounds severely diminishes as the distance increases. Therefore, the removal efficiency decreased with increasing distance in the system.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.4
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• pp.484-491
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• 2008

In this paper, we design and fabricate the L-band high speed pulsed HPA using LDMOS FET. And we propose the high voltage and high speed switching circuit for LDMOS FET. The pulsed HPA using LDMOS FET is simpler than using GaAs FET because it has a high gain, high output power and sin81e voltage supply. LDMOS FET is suitable for pulsed HPA using switching method because it has $2{\sim}3$ times higher maximum drain-source voltage(65 V) than operating drain-source voltage($V_{ds}=26{\sim}28\;V$). As results of test, the output peak power is 100 W at 1.2 GHz, the rise/fall time of output RF pulse are 28.1 ns/26.6 ns at 2 us pulse width with 40 kHz PRF, respectively.

• Journal of the Korean institute of surface engineering
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• v.48 no.6
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• pp.360-370
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• 2015

As the size of the semiconductor devices shrinks to nanometer scale, the importance of plasma etching process to the fabrication of nanometer scale semiconductor devices is increasing further and further. But for the nanoscale devices, conventional plasma etching technique is extremely difficult to meet the requirement of the device fabrication, therefore, other etching techniques such as use of multi frequency plasma, source/bias/gas pulsing, etc. are investigated to meet the etching target. Until today, various pulsing techniques including pulsed plasma source and/or pulse-biased plasma etching have been tested on various materials. In this review, the experimental/theoretical studies of pulsed plasmas during the nanoscale plasma etching on etch profile, etch selectivity, uniformity, etc. have been summarized. Especially, the researches of pulsed plasma on the etching of silicon, $SiO_2$, and magnetic materials in the semiconductor industry for further device scaling have been discussed. Those results demonstrated the importance of pulse plasma on the pattern control for achieving the best performance. Although some of the pulsing mechanism is not well established, it is believed that this review will give a certain understanding on the pulsed plasma techniques.

• Proceedings of the KIEE Conference
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• 2005.07b
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• pp.1530-1533
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• 2005

Total 12 units of high power klystron-modulator systems as microwave source is under operation for 2.5-GeV electron linear accelerator in Pohang Light Source(PLS) linac. RF power and beam power of klystron are precisely measured for the effective control of electron beam. A precise measurement and measurement equipment with good response characteristics are required for this. Input power of klystron is calculated from the applied voltage and the current on its cathode. Tiny measurement error severely effects RF output power value of klystron. Therefore, special care is needed to measure precise beam voltage. Capacitive voltage divider(CVD) unit is intended for the measurement of beam voltage of 400 kV generated from the pulsed klystron-modulator system. Main parameter to determine the standard capacitance in the high arm of CVD is dielectric constant of insulation oil. Therefore CVD should be designed to have a minimum capacitance variation due to voltage, frequency and temperature in the measurement range. This paper will discuss the analysis of capacitive voltage divider for a pulsed high-voltage measurement, and the empirical relations between capacitance and oil temperature variation.

• Journal of Microbiology
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• v.43 no.5
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• pp.424-429
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• 2005

In previous studies, it has been reported that both S. enteritidis, the most common serotype, and S. enteritidis Phage Type 4 (SEPT 4) isolates were identified as the most prevalent PT in domestic poultry and also in humans in Korea until 2002. The aim of this study was to analyze the genetic diversity and epidemiological properties of both PT isolates, and also to trace the source of SEPT 4 isolates from domestic poultry and humans by Pulsed-field gel electrophoresis (PFGE). In order to understand the molecular epidemiologic properties of SEPT 4 isolates, which have very similar phenotypic properties to our preliminary investigations (serotyping, phage typing, large plasmids and antibiograms), PFGE analysis with XbaI enzyme was performed on the representative SEPT 4 isolates. Thirty-six SEPT 4 isolates were analyzed and differentiated with 10 pulsed-field profiles (PFP) expressing very high discriminative ability (SID: 0.921). In PFP, SEPT 4 isolates from human patients showed a perfect genetic match with those from broiler chickens and meats. Therefore, this study was able to successfully trace the major source of SEPT 4 isolates and also to determine the usefulness of the PFGE method for genetic analysis of epidemic strains.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1710-1713
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• 2002

Recently, the pulsed power system has been used to many applications. Such as remediation of environmental hazards, food sterilization, air pollution control E/P (Electrostatic Precipitator), DeNOx/DeSOx power system, ozone generator, high energy physics, and other power source applications. A pulse energy efficiency for load depends on the rising time, peak value. Pulse duration and impedance matching etc. The pulsed power system generally required for short pulse duration and high peak value was forced to consider its volume and economy. In this paper, we investigated operating characteristics of the CO2 laser using an inductively pulsed power system.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.48-48
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• 2009

Conventionally in pulsed gas metal arc welding (GMAW-P), drop transfer is analyzed with simplest square pulse waveform. While the pulse current is described by four parameters (peak current magnitude and time plus base current magnitude and time), it deviates the real pulse shape. Real pulse can be better idealized by the trapezoidal pulse waveform described by two additional parameters, i.e., current rise and fall rate (dI/dt). Power source response rate is described by these parameters. In this work, the effect of these parameters on drop transfer is predicted by the force displacement model (FDM). While peak current has significant effects on drop detachment, drop transfer is also influenced by the current rise rate. Predictions indicate that the current rise rate can have considerable effects on the size of the detached drop if other pulse parameters are kept constant. FDM is applied to determine peak time for one drop one pulse condition (ODOP) when rests of the pulse parameters are given. The predicted range of ODOP shows good agreement with experimental data.