• 제목/요약/키워드: pulsed plasma

검색결과 292건 처리시간 0.027초

60 MHz/2 MHz Dual-Frequency Capacitive Coupled Plasma에서 Pulse-Time Modulation을 이용한 $SiO_2$의 식각특성

  • 김회준;전민환;양경채;염근영
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
    • /
    • pp.307-307
    • /
    • 2013
  • 초고집적 회로에 적용되는 반도체 소자의critical dimension (CD)이 수 nano 사이즈로 줄어들고 있기 때문에, 다양한 물질의 식각을 할 때, 건식식각의 중요성이 더 강조되고 있다. 특히 $SiO_2$와 같은 유전체 물질을 식각할 때, plasma process induced damages (P2IDs)가 관찰되어 왔고, 이러한 P2IDs를 줄이기 위해, pulsed-time modulation plasma가 광범위하게 연구되어 왔다. Pulsed plasma는 정기적으로 radio frequency (RF) power on과 off를 반복하여 rf power가 off된 동안, 평균전자 온도를 낮춤으로써, 웨이퍼로 입사되는 전하 축적을 효과적으로 줄일 수 있다. 또한 fluorocarbon plasmas를 사용하여 $SiO_2$를 식각하기 위해 Dual-Frequency Capacitive coupled plasma (DF-CCP)도 널리 연구되어 왔는데, 이것은 기존의 방법과는 다르게 plasma 밀도와 ion bombardment energy를 독립적으로 조절 가능하다는 장점이 있어서 미세 패턴을 식각할 때 효과적이다. 본 연구에서는 Source power에는 60 MHz pulsed radio frequency (RF)를, bias power에는 2 MHz continuous wave (CW) rf power가 사용된 system에서 Ar/$C_4$ F8/$O_2$ 가스 조합으로, amorphous carbon layer (ACL)가 hard mask로 사용된 $SiO_2$를 식각했다. 그리고 source pulse의 duty ratio와 pulse frequency의 효과에 따른 $SiO_2$의 식각특성을 연구하였다. 그 결과, duty ratio의 감소에 따라 $SiO_2$, ACL의 etch rate이 감소했지만, $SiO_2$/ACL의 etch selectivity는 증가하였다. 반면에 pulse frequency의 변화에 따른 두 물질의 etch selectivity는 크게 변화가 없었다. 그 이유는 pulse 조건인 duty ratio의 감소가 전자 온도 및 전자 에너지를 낮춰 $C_2F8$가스의 분해를 감소시켰으며, 이로 인해 식각된 $SiO_2$의 surface와 sidewall에 fluorocarbon polymer의 형성이 증가하였기 때문이다. 또한 duty ratio의 감소에 따라 etch selectivity뿐만 아니라 etch profile까지 향상되는 것을 확인할 수 있었다.

  • PDF

펄스 플라스마 반응기에 대한 임피던스 및 누설 인덕턴스 분석 (Analysis of Impedance and Stray Inductance for Pulsed Plasma Reactor)

  • 최영욱;이홍식;임근희;김태희;김종화;장길홍;신완호;송영훈
    • 대한전기학회논문지:전기물성ㆍ응용부문C
    • /
    • 제48권4호
    • /
    • pp.253-260
    • /
    • 1999
  • In this paper, the impedance characteristic of wire-plate pulsed plasma reactor was investigated by experiment. The experiment have carried out under the several conditions of voltage, wire length and wire-plate distance. The impedance of reactor wad decreased with increasing voltage and wire length. The nature of discharge in reactor was changed from streamer corona to spark with increasing incident energy, from which we understood the critical energy density between the two discharges. Fromthis experiment, we proposed the method for the impedance matching between pulse generator and pulsed plasma reactor. Additionally, we succeeded in the analysis ofstray inductance of 0.5MW reactor using EMTP (ElectroMagnetic Transients Program). This means that EMTP is also useful for the analysis of inevitable stray inductance of forthcoming a large scale reactor.

  • PDF

리아프노프 함수에 기초한 과학기술위성 2호 펄스형 플라즈마 전기추력기의 동작 안정성 연구 (On Stability of the Pulsed Plasma Thruster for STSAT-2 based on the Lyapunov Function)

  • 신구환;남명용;강경인;임종태;차원호
    • 한국항공우주학회지
    • /
    • 제34권1호
    • /
    • pp.95-102
    • /
    • 2006
  • 펄스형 플라즈마 전기추력기의 설계기술과 제어기법에 있어서는 과거의 기술에 비하여 많은 도약을 하였다. 그리고, 펄스형 플라즈마 전기추력기의 충전된 전기에너지는 추력기 구동시 중요한 비중을 차지함을 알 수 있다. 펄스형 플라즈마 전기추력기는 매 분사시 축전기에 충전된 전기에너지를 방전시켜 분사 시키므로서 추력을 얻는 장치이다. 따라서, 매 분사시 균일한 추력을 얻고자 할 경우에는 동작시점에서 균일한 전기 에너지가 충전되어 있어야 한다. 따라서, 본 논문에서는 매 분사시 균일한 추력을 얻기 위한 기법과 축전기와 추력기 엔진간의 기하학적 연결에 따른 안정성을 연구하였다.

에너지 반환회로를 갖는 비대칭 펄스형 DC 플라즈마 전원장치에 관한 연구 (A Study on Asymmetric Pulsed DC Plasma Power Supply with Energy Recovery Circuit)

  • 추대혁;유성환;김준석;한기준
    • 전력전자학회논문지
    • /
    • 제18권6호
    • /
    • pp.593-600
    • /
    • 2013
  • The asymmetric pulsed DC reactive magnetron sputtering system is widely used for the high quality plasma sputtering process such as a thin film deposition. In asymmetric pulsed DC power supply a reverse voltage is applied to the target periodically to minimize arc discharging effect. When sputtering in the mid-frequency range (20-350 kHz), the periodic target voltage reversals suppress arc formation at the target and provide long-term process stability. Thus, high quality, defect-free coatings of these materials can now be deposited at competitive rates. In this paper, a new style asymmetric pulsed DC power supply including mid-transformer is presented. In the proposed, an energy recovery circuit is adopted to reduce the mutual inductance of the transformer. As a result, the system dynamics of the voltage control loop is increased highly and the non-linear voltage boosting effect of the conventional system is removed. This work was proved through simulation and laboratory based experimental study.

Theoretical Modeling of Pulsed Plasma Thruster Performance with Teflon Ablation

  • Cho, Mingyoung;Sung, Hong-Gye
    • International Journal of Aeronautical and Space Sciences
    • /
    • 제18권1호
    • /
    • pp.138-143
    • /
    • 2017
  • A performance analysis for a pulsed plasma thruster(PPT) has been conducted to predict the thrust and current change. Two models were implemented - a one-dimensional lumped circuit analysis model and the Teflon ablation model provided by Michael Keidar. The circuit model incorporating resistance and inductance models was adapted to predict the magnitude of the discharge current. Numerical simulations like current discharge rates with different voltages were reasonably well compared with experimental data. The effects of Teflon ablation on thruster characteristics were investigated.

Development of the Pulsed Plasma Thruster (PPT) for Science and Technology Satellite-2 (STSAT-2)

  • Shin, G.H.;Nam, M.R.;Cha, W.H.;Lim, J.T.
    • 제어로봇시스템학회:학술대회논문집
    • /
    • 제어로봇시스템학회 2005년도 ICCAS
    • /
    • pp.352-355
    • /
    • 2005
  • This paper describes an engineering model development of a pulsed plasma thruster, which is capable of an impulse bit of 20uNs and a specific impulse of 800s. The solid fuel which is Teflon allows for a self-contained, inert and stable propellant system. And, the PPT technology makes it possible to consider a revolutionary attitude control system (ACS) concept providing stabilization and pointing accuracies previously obtainable only with reaction wheels, with reduced mass and power requirements.

  • PDF

지뢰탐지를 위한 ECR 플라즈마에서 타깃에 고전압 DC 펄스 인가시 전압-전류 특성 분석 (I-V Characteristics of Negatively DC Pulsed Target in ECR Plasma for Landmine Detection)

  • 김성봉;이희재;박승일;유석재;조무현;한승훈;임병옥
    • 한국표면공학회지
    • /
    • 제47권1호
    • /
    • pp.53-56
    • /
    • 2014
  • I-V characteristics of a cylindrical target in an ECR plasma were studied for sheath spatial evolutions when the target was pulsed biased to a high negative potential. The magnetic field effects on sheath thickness and sheath boundary speed were investigated by comparison between the experimental results and the theoretical results using the Child-Langmuir sheath model. The results showed that the magnetic field suppressed electron motion away from the target so that sheath thickness and sheath boundary speed decreased.

Al:ZnO의 펄스 스퍼터 증착에서 주파수에 따른 플라즈마의 특성과 기판 온도 변화 (Plasma Characteristics and Substrate Temperature Change in Al:ZnO Pulse Sputter Deposition: Effects of Frequency)

  • 양원균;주정훈
    • 한국표면공학회지
    • /
    • 제40권5호
    • /
    • pp.209-213
    • /
    • 2007
  • Change of the plasma volume by pulse frequency in a bipolar pulsed DC unbalanced magnetron sputtering was investigated. As increasing the frequency at off duty 10% and at a constant power, the plasma volume was lengthened in vertical direction from the AZO target. When there is an electrically floated substrate, the vertical length of the plasma area was not affected by the pulse frequency. Instead, the diameter of the plasma volume was increased. We found that the temperature rise of a substrate was affected by the pulse frequency, too. As increasing it, the maximum temperature rise of a glass substrate was decreased from $132^{\circ}C\;to\;108^{\circ}C$.

수치모델을 이용한 pulsed dc bias ICP장치의 플라즈마 특성 해석 (Numerical Modeling of Plasma Characteristics of ICP System with a Pulsed dc Bias)

  • 주정훈
    • 한국표면공학회지
    • /
    • 제43권3호
    • /
    • pp.154-158
    • /
    • 2010
  • Numerical analysis is done to investigate the effects of pulse bias on the plasma processing characteristics like ion doping and ion nitriding by using fluid dynamic code with a 2D axi-symmetric model. For 10 mTorr of Ar plasma, -1 kV of pulse bias was simulated. Maximum sheath thickness was around 20 mm based on the electric potential profile. The peak electron temperature was about 20 eV, but did not affect the averaged plasma characteristics of the whole chamber. Maximum ion current density incident on the substrate was 200 $A/m^2$ at the center, but was decreased down to 1/10th at radius 100 mm, giving poor radial uniformity.

DC 스퍼터법과 비대칭 바이폴라 펄스 DC 스퍼터법으로 증착된 HfN 코팅막의 물성 비교연구 (A Comparative Study of HfN Coatings Deposited by DC and Pulsed DC Asymmetric Bipolar Magnetron Sputtering)

  • 전성용;정평근
    • 한국표면공학회:학술대회논문집
    • /
    • 한국표면공학회 2017년도 춘계학술대회 논문집
    • /
    • pp.103.2-103.2
    • /
    • 2017
  • Nanocrystalline HfN coatings were prepared by reactively sputtering Hf metal target with N2 gas using a magnetron sputtering system operated in DC and ABPP (asymmetric bipolar pulsed plasma) condition with various duties and frequencies. The effects of duty and frequency, ranging from 75 to 100 % and 5 to 50 kHz, on the coating microstructure, crystallographic and mechanical properties were systematically investigated with FE-SEM, AFM, XRD and nanoindentation. The results show that pulsed plasma has a significant influence on coating microstructure and mechanical properties of HfN coatings. Coating microstructure evolves from the columnar structure to a highly dense one as duty decreases. Average grain size and nano hardness of HfN coatings were also investigated with various pulsed conditions.

  • PDF