• Proceedings of the KIEE Conference
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• 2005.10c
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• pp.223-225
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• 2005

This paper presents a novel prototype of a current source resonant inverter using insulated gate bipolar transistors for driving a streamer reactor, streamer generation technology has been recognized as one of the best methods for water treatment, disinfection, industrial wastes utilization, and so on. However, some technological difficulties related to efficient streamer production have been significant problems restricting streamer usage in the industrial plants. Introduced in this paper is a pulse density modulated high frequency inverter for a plasma generate, which is developed with the aim to improve power conversion and control characteristics of the streamer reactor by using advances in power electronic technology. The developed system implements the feedforward control-based pulse density modulation control scheme with pulse width modulation feedback control strategy to compensate temperature and other environmental influences on streamer discharge.

• The Transactions of the Korean Institute of Power Electronics
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• v.14 no.1
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• pp.54-61
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• 2009

This paper proposes the 2nd-order SDSDM (Space Dithered Sigma-Delta Modulation) for performance improvement of a buck converter. The PWM (Pulse Width Modulation) has a drawback in that power spectrum tends to be concentrated around the switching frequency. The resulting harmonic spikes cause a EMI(Electromagnetic Interference) and switching loss in semiconductor, etc. The 1st-order SDSDM scheme is a kind of DSDM for reducing these harmonic spikes. In this scheme, a switching frequency is spread through random dither generator placed on input part. In experimental result, the proposed 2nd-order SDSDM is confirmed by applying to a buck converter.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2006.05a
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• pp.391-394
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• 2006

This paper presents soft switching zero voltage switching high frequency inverter for rare gas fluorescent lamp using dielectric-barrier discharge phenomenon. The simple high-frequency inverter can completely achieve stable zero voltage soft switching (ZVS) commutation for wide its output power regulation ranges and load variations under its constant high frequency pulse density modulation (PDM) scheme. Its transient and steady state operating principle is originally described and discussed for a constant high-frequency PDM control strategy under a stable ZVS operation commutation, together with its output effective power regulation characteristics-based on the high frequency PDM strategy. The experimental operating performances of this high frequency Inverter are illustrated as compared with computer simulation results and experimental ones. Its light dimming characteristics due to power regulation scheme are evaluated and discussed on the basis of simulation and experimental results. The feasible effectiveness of this high frequency inverter appliance implemented here is proven from the practical point of view.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.2 no.2
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• pp.59-63
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• 1988

In a fixed AC power source the PWM techniques were used to vary the voltage and the fundamental frequency. The conventional PWM techniques due to the problem of commutation number and filter size have been studied the PWM output waveforms which applied the motor drive. However in this paper, the carrier frequency with sinusoidal PWM waveform is modulated from 10(KHz) to 45(KHz) using termination devices with high - speed switching capacity and applying LPF(Low Pass Filter) with small capacity to output of inverter and the PAM(Pulse Amplitude Modulation)is obtained. Considering the property of the speed and the control, the sinusoidal PWM control circuit was composed of the microprocessor and analog circuit. In experment result, the system properties are study on the sinusoidal voltage waveform with modulation index changing from 0.6 to 1.0.

• The Transactions of the Korean Institute of Power Electronics
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• v.21 no.2
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• pp.102-110
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• 2016

In this paper, a high-frequency dual mode control LLC resonant converter with wide input voltage range is proposed through zero voltage switching (ZVS) under the universal line input voltage and every load conditions. Conventional small power adapter driving should be satisfied with universal line input voltage because it has no power factor correction circuit regulation. The conventional LLC resonant converter for an adapter can reduce the size of transformer in terms of high-frequency driving and ZVS. However, this converter has a disadvantage in terms of design of resonant tank under various input voltages because the frequency modulation range is very wide to satisfy voltage conversion gain. Compared with the conventional one, the proposed LLC converter can be adapted to universal line input voltage and high-frequency driving because it is controlled by pulse width modulation and pulse frequency modulation with control voltage. The validity of the proposed LLC converter is proved through the 60 W prototype.

• Journal of Power Electronics
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• v.16 no.1
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• pp.388-397
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• 2016

An error-compensated pulse width modulator (ECPWM) is proposed to improve the baseband harmonic performance and the switching loss of voltage source inverters (VSIs). Selecting between harmonic distortion and switching loss is a design tradeoff in the conventional space vector pulse width modulation. In this work, an accumulated difference in produced and desired phase voltages is considered to adjust the reference signal. This mechanism can compensate for the voltage error in the previous carrier period. With error compensation every half-carrier period, the proposed ECPWM allows one-half reduction in carrier frequency without scarifying baseband harmonic distortion. The proposed modulator is applied to a three-phase VSI with R-L load and a motor-speed-control system for experiments. The measured efficiency and operating temperature of switches confirm the effectiveness of the proposed scheme.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.8
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• pp.1552-1557
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• 2007

In this work, temperature stable pulse width modulation controller using bandgap reference voltage is proposed. Two bandgap reference voltages are designed by using BiCMOS technology which are temperature dependent and independent voltage references. PWM controller is designed by using 3.3 volt supply voltage and the output frequency is 1MHz. From simulation results, the variation of output pulse width is less than form +0.86% to -0.38% in the temperature range $0^{\circ}C\;to\;70^{\circ}C$.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.3
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• pp.581-586
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• 2017

The well-known Integral Pulse Frequency Modulation (IPFM) cardiac oscillator has been used to generate the heart beat fluctuations as a representation of the modulatory autonomic nervous activity in terms of sympathetic and parasympathetic state. The IPFM model produces heartbeats by integrating the modulated sinusoid signals and applying the threshold of unity or chaotic threshold levels. This study aims at evaluating the performance of IPFM model by analyzing the influence of the threshold level with comparatively applying preset threshold of unity and Logistic-map and Henon-map chaotic-threshold. Based on our simulated results with interpreting the spectral features of Heart Rate Variability (HRV), we can conclude that the IPFM model with preset threshold level of unity can generate the optimal heartbeat variations int the sense of clinically valid heartbeats.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.484-488
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• 2001

The grid voltage of commercial utility power source hi Japan and USA is 100rms, but in China and European countries, it is 200rms. In recent years, In Japan 200Vrms out putted single phase three wire system begins to be used for high power applications. In 100Vrms utility AC power applications and systems, an active voltage clamped quasi-resonant Inverter circuit topology using IGBTs has been effectively used so far for the consumer microwave oven. In this paper, presented is a half bridge type voltage-clamped high-frequency Inverter type AC-DC converter using which is designed for consumer magnetron drive used as the consumer microwave oven in 200V utility AC power system. This zero voltage soft switching Inverter can use the same power rated switching semiconductor devices and three-winding high frequency transformer as those of the active voltage clamped quasi-resonant Inverter using the IGBTs that has already been used for 100V utility AC power source. The operating performances of the voltage source single ended push pull type Inverter are evaluated and discussed for consumer microwave oven. The harmonic line current components In the utility AC power side of the AC-DC power converter operating at ZVS­PWM strategy reduced and improved on the basis of sine wave like pulse frequency modulation and sine wave like pulse width modulation for the utility AC voltage source.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.472-472
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• 2011

The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity, but also low electron temperature. But CCP source has some problems, such as difficulty in varying the ion bombardment energy separately, low plasma density, and high processing pressure, etc. In this reason, dual frequency CCP has been investigated with a separate substrate biasing to control the plasma parameters and to obtain high etch rate with high etch selectivity. Especially, in this study, we studied on the etching of $SiO_2$ by using the pulse-time modulation in the dual-frequency CCP source composed of 60 MHz/ 2 MHz rf power. By using the combination of high /low rf powers, the differences in the gas dissociation, plasma density, and etch characteristics were investigated. Also, as the size of the semiconductor device is decreased to nano-scale, the etching of contact hole which has nano-scale higher aspect ratio is required. For the nano-scale contact hole etching by using continuous plasma, several etch problems such as bowing, sidewall taper, twist, mask faceting, erosion, distortions etc. occurs. To resolve these problems, etching in low process pressure, more sidewall passivation by using fluorocarbon-based plasma with high carbon ratio, low temperature processing, charge effect breaking, power modulation are needed. Therefore, in this study, to resolve these problems, we used the pulse-time modulated dual-frequency CCP system. Pulse plasma is generated by periodical turning the RF power On and Off state. We measured the etch rate, etch selectivity and etch profile by using a step profilometer and SEM. Also the X-ray photoelectron spectroscopic analysis on the surfaces etched by different duty ratio conditions correlate with the results above.