• 한국표면공학회지
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• 제34권5호
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• pp.414-420
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• 2001

A 30-kV plasma immersion ion implantation setup (P $I^3$) has been equipped with a self-developed 6'-magnetron to perform hard coatings with enhanced adhesion by P $I^3$D(P $I^3$ assisted deposition) process. Using ICP source with immersed Ti antenna and reactive magnetron sputtering of Ti target in $N_2$/Ar ambient gas mixture, the TiN films were prepared on Si substrates at different pulse bias and ion-to-atom arrival ratio ( $J_{i}$ $J_{Me}$ ). Prior to TiN film formation the nitrogen implantation was performed followed by deposition of Ti buffer layer under A $r^{+}$ irradiation. Films grown at $J_{i}$ $J_{Me}$ =0.003 and $V_{pulse}$=-20kV showed columnar grain morphology and (200) preferred orientation while those prepared at $J_{i}$ $J_{Me}$ =0.08 and $V_{pulse}$=-5 kV had dense and eqiaxed structure with (111) and (220) main peaks. X-ray diffraction patterns revealed some amount of $Ti_{x}$ $N_{y}$ in the films. The maximum microhardness of $H_{v}$ =35 GN/ $M^2$ was at the pulse bias of -5 kV. The P $I^3$D technique was applied to enhance wear properties of commercial tools of HSS (SKH51) and WC-Co alloy (P30). The specimens were 25-kV PII nitrogen implanted to the dose 4.10$^{17}$ c $m^{-2}$ and then coated with 4-$\mu\textrm{m}$ TiN film on $Ti_{x}$ $N_{y}$ buffer layer. Wear resistance was compared by measuring weight loss under sliding test (6-mm $Al_2$ $O_3$ counter ball, 500-gf applied load). After 30000 cycles at 500 rpm the untreated P30 specimen lost 3.10$^{-4}$ g, and HSS specimens lost 9.10$^{-4}$ g after 40000 cycles while quite zero losses were demonstrated by TiN coated specimens.s.

• Journal of Radiation Protection and Research
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• 제22권3호
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• pp.143-151
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• 1997

NaI(TI) 검출기의 파고는 용도에 따라 변하기 때문에, 온도 변화는 분광분석기의 에너지 교정에 영향을 미친다. 외부 선원을 사용하여 파고의 온도 의존성을 보상할 수 있으나 이것은 바람직하지 않은 콤프턴 영향을 야기한다. 이 연구에서는 환경중의 감마선 스펙트럼에서 뚜렸한 $^{212}Pb$로부터의 239 keV 피크, $^{214}Pb$로부터의 351 keV 피크, 40K로부터의 1460 keV 피크, $^{208}Tl$으로 부터의 2614 keV 피크를 에너지 교정의 기준 피크로 사용하였다. 이들 피크를 이용하는 방법은 마이크로소프트사의 Visual Basic으로 프로그램화하였다. 이렇게 개발된 프로그램은 신뢰성과 적용성을 검증하기 위해 $-20^{\circ}C$ 부터 $10^{\circ}C$까지 변하는 온도에서 30분 간격으로 측정한 환경 스펙트럼에 적용하였다. 그 결과로써 일상의 기온에서 측정한 $3'{\times}3'$ NaI(Tl) 검출기의 스펙트럼에 대해 이 방식의 에너지 교정은 효과적임이 입증되었다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2002년도 추계종합학술대회
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• pp.462-466
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• 2002

본 논문에서는 8Bit MPU를 이용한 신경자극 치료장치가 설계되었다. 개발되고 있는 시스템은 저전력 MPU와 전압 boosting회로, 과전류 감시 및 이상전류 보정회로, 펄스의 상태를 알려주는 LED display 및 BUTTO과 펄스를 우리 몸에 전달시켜주는 Pad로 이루어져있다. 입력된 9V의 전압은 전압 boosting회로를 통해 120V까지 승압된다. 펄스는 단상 직사각형파, 대칭성 이상파, 교대 대칭성 이상파등의 형태로 우리 몸에 입력되어 근육의 수축과 이완을 시켜주는 알고리즘을 적용하였다.

• 전기학회논문지
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• 제56권1호
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• pp.88-99
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• 2007

In this paper, a novel new pulse power generator based on IGBT stacks is proposed for pulse power application. Because it can generate up to 60kV pulse output voltage without any step- up transformer or pulse forming network, it has advantages of fast rising time, easiness of pulse width variation and rectangular pulse shape. Proposed scheme consists of series connected 9 power stages to generate maximum 60kV output pulse and one series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 850VDC pulse. Finally pulse output voltage is applied using total 72 series connected IGBTs. To reduce component for gate power supply, a simple and robust gate drive circuit is proposed. For gating signal synchronization, full bridge invertor and pulse transformer generates on-off signals of IGBT gating with gate power simultaneously and it has very good characteristics of short circuit protection.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권6호
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• pp.229-235
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• 2002

This paper presents the fabrication of polycrystalline thin film transistor(TFT) using sequential lateral solidification(SLS) of amorphous silicon. The fabricated SLS TFT showed high Performance suitable for active matrix liquid crystal display(AMLCD). The SLS process involves (1) a complete melting of selected area via irradiation through a patterned mask, and (2) a precisely controlled pulse translation of the sample with respect to the mask over a distance shorter than the super lateral growth(SLG) distance so that lateral growth extended over a number of iterative steps. The SLS experiment was performed with 550$\AA$ a-Si using 308nm XeCl laser having $2\mu\textrm{m}$ width. Irradiated laser energy density is 310mJ/$\textrm{cm}^2$ and pulse duration time was 25ns. The translation distance was 0.6$\mu$m/pulse, 0.8$\mu$m/pulse respectively. As a result, a directly solidified grain was obtained. Thin film transistors (TFTs) were fabricated on the poly-Si film made by SLS process. The characteristics of fabricated SLS p -type poly-Si TFT device with 2$\mu\textrm{m}$ channel width and 2$\mu\textrm{m}$ channel length showed the mobility of 115.5$\textrm{cm}^2$/V.s, the threshold voltage of -1.78V, subthreshold slope of 0.29V/dec, $I_{off}$ current of 7$\times$10$^{-l4}$A at $V_{DS}$ =-0.1V and $I_{on}$ / $I_{off}$ ratio of 2.4$\times$10$^{7}$ at $V_{DS}$ =-0.1V. As a result, SLS TFT showed superior characteristics to conventional poly-Si TFTs with identical geometry.y.y.y.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 F
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• pp.2623-2625
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• 1999

With the increasing demands for clean environment, development of air cleaning systems has been received increasing attention. EP is usually used for air cleaning in the coal power plant. One of the key technology in the EP is high voltage pulse power supply, which affects the performance of the overall system. In this study, high voltage micro pulse power supply for the pilot EP is developed. The power supply has a de source and a pulse one. The ratings of the dc and pulse source are 60kV and 70kV respectively.

• 한국멀티미디어학회논문지
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• 제7권9호
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• pp.1233-1239
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• 2004

유성음원과 무성음원을 사용하는 음성부호화 방식에 있어서, 같은 프레임 안에 모음과 무성자음이 있는 경우에 음질저하 현상이 나타난다. 본 논문에서는 음질을 개선하기 위해 V/S/TSIUVC 스위칭, 개별피치 펄스와 TSIUVC 근사합성 방법을 사용한 새로운 멀티펄스 음성부호화 방식을 제시한다. TSIUVC는 영교차율과 개별피치 펄스에 의하여 추출되며, TSIUVC의 추출율은 여자와 남자음성에서 각각 91%와 95.2%를 얻었다. 여기에서 중요한 사실은 양질의 TSIUVC 합성 파형을 얻기 위해서는 0.547kHz 이하와 2.813kHz 이상의 주파수 정보를 사용하여야 한다. V/UV를 이용한 MPC와 V/S/TSIUVC를 이용한 FBD-MPC의 비교평가를 하였다. 실험결과, FBD-MPC의 음질이 MPC의 음질에 비하여 상당히 개선되었음을 알 수 있었다.

• ETRI Journal
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• 제37권1호
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• pp.97-106
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• 2015

In this paper, MOS-triggered silicon-controlled rectifier (SCR)-based electrostatic discharge (ESD) protection circuits for mobile application in 3.3 V I/O and SCR-based ESD protection circuits with floating N+/P+ diffusion regions for inverter and light-emitting diode driver applications in 20 V power clamps were designed. The breakdown voltage is induced by a grounded-gate NMOS (ggNMOS) in the MOS-triggered SCR-based ESD protection circuit for 3.3 V I/O. This lowers the breakdown voltage of the SCR by providing a trigger current to the P-well of the SCR. However, the operation resistance is increased compared to SCR, because additional diffusion regions increase the overall resistance of the protection circuit. To overcome this problem, the number of ggNMOS fingers was increased. The ESD protection circuit for the power clamp application at 20 V had a breakdown voltage of 23 V; the product of a high holding voltage by the N+/P+ floating diffusion region. The trigger voltage was improved by the partial insertion of a P-body to narrow the gap between the trigger and holding voltages. The ESD protection circuits for low- and high-voltage applications were designed using $0.18{\mu}m$ Bipolar-CMOS-DMOS technology, with $100{\mu}m$ width. Electrical characteristics and robustness are analyzed by a transmission line pulse measurement and an ESD pulse generator (ESS-6008).

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.904-905
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• 2008

In this paper, a novel 60kV, 300A, 3kHz pulsed power supply based on IGBT stacks is proposed. Proposed scheme consists of series connected 9 power stages to generate maximum 60kV output pulse and 15kW series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 830VDC, 300A pulses. Finally pulse output voltage is applied using total 72 series connected IGBTs. The synchronization of gating signal is important of series operation of IGBTs. For gating signal synchronization, full bridge inverter and pulse transformer generates on-off signals of IGBT gating and specially designed gate power circuit was used.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 F
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• pp.2130-2132
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• 1998

With the increasing demands for clean environment, development of air cleaning systems has been received increasing attention. EP is usually used for air cleaning in the coal power plant. One of the key technology in the EP is high voltage pulse power supply, which affects the performance of the overall system. In this study, high voltage micro pulse power supply for the EP is developed for a 500MW coal power plant. The power supply has a dc source and a pulse one. The ratings of the dc and pulse source are 60kV, 800mA and 70kV, 400mA respectively.