• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.414-420
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• 2001

A 30-kV plasma immersion ion implantation setup (P $I^3$) has been equipped with a self-developed 6'-magnetron to perform hard coatings with enhanced adhesion by P $I^3$D(P $I^3$ assisted deposition) process. Using ICP source with immersed Ti antenna and reactive magnetron sputtering of Ti target in $N_2$/Ar ambient gas mixture, the TiN films were prepared on Si substrates at different pulse bias and ion-to-atom arrival ratio ( $J_{i}$ $J_{Me}$ ). Prior to TiN film formation the nitrogen implantation was performed followed by deposition of Ti buffer layer under A $r^{+}$ irradiation. Films grown at $J_{i}$ $J_{Me}$ =0.003 and $V_{pulse}$=-20kV showed columnar grain morphology and (200) preferred orientation while those prepared at $J_{i}$ $J_{Me}$ =0.08 and $V_{pulse}$=-5 kV had dense and eqiaxed structure with (111) and (220) main peaks. X-ray diffraction patterns revealed some amount of $Ti_{x}$ $N_{y}$ in the films. The maximum microhardness of $H_{v}$ =35 GN/ $M^2$ was at the pulse bias of -5 kV. The P $I^3$D technique was applied to enhance wear properties of commercial tools of HSS (SKH51) and WC-Co alloy (P30). The specimens were 25-kV PII nitrogen implanted to the dose 4.10$^{17}$ c $m^{-2}$ and then coated with 4-$\mu\textrm{m}$ TiN film on $Ti_{x}$ $N_{y}$ buffer layer. Wear resistance was compared by measuring weight loss under sliding test (6-mm $Al_2$ $O_3$ counter ball, 500-gf applied load). After 30000 cycles at 500 rpm the untreated P30 specimen lost 3.10$^{-4}$ g, and HSS specimens lost 9.10$^{-4}$ g after 40000 cycles while quite zero losses were demonstrated by TiN coated specimens.s.

• Journal of Radiation Protection and Research
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• v.22 no.3
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• pp.143-151
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• 1997

As the pulse heights from a NaI(Tl) detector vary with the temperature of the measuring environment a significant change in temperature may affect the energy calibration of the spectrometer. The auto-adjustment of the channel corresponding to a pulse heights can be achieved by introducing an external reference source to compensate the temperature dependency of pulse heights, but unfavorable increases of the Compton continuum are caused due to the external source. In this study, the total absorption peaks dominant in the typical environmental gamma spectrum-239 keV from $^{212}Pb$, 351 keV from $^{214}Pb$, 1460 keV from $^{40}K$ and 2614 keV from $^{208}Tl$ for examples - were used as reference in the correction of energy calibration. With these peaks, the program to calibrate the energy of the s spectrum was developed using Microsoft Visual Basic language. The program developed here was applied to the environmental spectra measured at intervals of 30 minutes in the temperature range of from $-20^{\circ}C$ to $10^{\circ}C$ to demonstrate the validity and applicability. As a result of the test, the correction scheme appeared to be effective in the temperature changes encountered in the usual environment.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.462-466
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• 2002

This paper describes a low frequency electrical nerve stimulator for muscle care. The developed system consist of 8bit low power consumed MPU, voltage boosting circuit converting 9V input to 120V output, repairing circuit for distorted output pulse, LED and buttons for I/O, and electro-chemical pad. The pulse generation algorithm for the muscle care effect is developed with basic pulses such as a single phase rectangle pulse, symmetric rectangle pulse, and depolarized interrupt pulse.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.1
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• pp.88-99
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• 2007

In this paper, a novel new pulse power generator based on IGBT stacks is proposed for pulse power application. Because it can generate up to 60kV pulse output voltage without any step- up transformer or pulse forming network, it has advantages of fast rising time, easiness of pulse width variation and rectangular pulse shape. Proposed scheme consists of series connected 9 power stages to generate maximum 60kV output pulse and one series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 850VDC pulse. Finally pulse output voltage is applied using total 72 series connected IGBTs. To reduce component for gate power supply, a simple and robust gate drive circuit is proposed. For gating signal synchronization, full bridge invertor and pulse transformer generates on-off signals of IGBT gating with gate power simultaneously and it has very good characteristics of short circuit protection.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.6
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• pp.229-235
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• 2002

This paper presents the fabrication of polycrystalline thin film transistor(TFT) using sequential lateral solidification(SLS) of amorphous silicon. The fabricated SLS TFT showed high Performance suitable for active matrix liquid crystal display(AMLCD). The SLS process involves (1) a complete melting of selected area via irradiation through a patterned mask, and (2) a precisely controlled pulse translation of the sample with respect to the mask over a distance shorter than the super lateral growth(SLG) distance so that lateral growth extended over a number of iterative steps. The SLS experiment was performed with 550$\AA$ a-Si using 308nm XeCl laser having $2\mu\textrm{m}$ width. Irradiated laser energy density is 310mJ/$\textrm{cm}^2$ and pulse duration time was 25ns. The translation distance was 0.6$\mu$m/pulse, 0.8$\mu$m/pulse respectively. As a result, a directly solidified grain was obtained. Thin film transistors (TFTs) were fabricated on the poly-Si film made by SLS process. The characteristics of fabricated SLS p -type poly-Si TFT device with 2$\mu\textrm{m}$ channel width and 2$\mu\textrm{m}$ channel length showed the mobility of 115.5$\textrm{cm}^2$/V.s, the threshold voltage of -1.78V, subthreshold slope of 0.29V/dec, $I_{off}$ current of 7$\times$10$^{-l4}$A at $V_{DS}$ =-0.1V and $I_{on}$ / $I_{off}$ ratio of 2.4$\times$10$^{7}$ at $V_{DS}$ =-0.1V. As a result, SLS TFT showed superior characteristics to conventional poly-Si TFTs with identical geometry.y.y.y.

• Proceedings of the KIEE Conference
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• 1999.07f
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• pp.2623-2625
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• 1999

With the increasing demands for clean environment, development of air cleaning systems has been received increasing attention. EP is usually used for air cleaning in the coal power plant. One of the key technology in the EP is high voltage pulse power supply, which affects the performance of the overall system. In this study, high voltage micro pulse power supply for the pilot EP is developed. The power supply has a de source and a pulse one. The ratings of the dc and pulse source are 60kV and 70kV respectively.

• Journal of Korea Multimedia Society
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• v.7 no.9
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• pp.1233-1239
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• 2004

In a speech coding system using excitation source of voiced and unvoiced, it would be involved a distortion of speech qualify in case coexist with a voiced and an unvoiced consonants in a frame. This paper present a new multi-pulse coding method by using V/S/TSIUVC switching, individual pitch pulses and TSIUVC approximation-synthesis method in order to restrict a distortion of speech quality. The TSIUVC is extracted by using the zero crossing rate and individual pitch pulse. And the TSIUVC extraction rate was 91% for female voice and 96.2% for male voice respectively. The important thing is that the frequency information of 0.347kHz below and 2.813kHz above can be made with high quality synthesis waveform within TSIUVC. I evaluate the MPC use V/UV and the FBD-MPC use V/S/TSIUVC. As a result, I knew that synthesis speech of the FBD-MPC was better in speech quality than synthesis speech of the MPC.

• ETRI Journal
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• v.37 no.1
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• pp.97-106
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• 2015

In this paper, MOS-triggered silicon-controlled rectifier (SCR)-based electrostatic discharge (ESD) protection circuits for mobile application in 3.3 V I/O and SCR-based ESD protection circuits with floating N+/P+ diffusion regions for inverter and light-emitting diode driver applications in 20 V power clamps were designed. The breakdown voltage is induced by a grounded-gate NMOS (ggNMOS) in the MOS-triggered SCR-based ESD protection circuit for 3.3 V I/O. This lowers the breakdown voltage of the SCR by providing a trigger current to the P-well of the SCR. However, the operation resistance is increased compared to SCR, because additional diffusion regions increase the overall resistance of the protection circuit. To overcome this problem, the number of ggNMOS fingers was increased. The ESD protection circuit for the power clamp application at 20 V had a breakdown voltage of 23 V; the product of a high holding voltage by the N+/P+ floating diffusion region. The trigger voltage was improved by the partial insertion of a P-body to narrow the gap between the trigger and holding voltages. The ESD protection circuits for low- and high-voltage applications were designed using $0.18{\mu}m$ Bipolar-CMOS-DMOS technology, with $100{\mu}m$ width. Electrical characteristics and robustness are analyzed by a transmission line pulse measurement and an ESD pulse generator (ESS-6008).

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.904-905
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• 2008

In this paper, a novel 60kV, 300A, 3kHz pulsed power supply based on IGBT stacks is proposed. Proposed scheme consists of series connected 9 power stages to generate maximum 60kV output pulse and 15kW series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 830VDC, 300A pulses. Finally pulse output voltage is applied using total 72 series connected IGBTs. The synchronization of gating signal is important of series operation of IGBTs. For gating signal synchronization, full bridge inverter and pulse transformer generates on-off signals of IGBT gating and specially designed gate power circuit was used.

• Proceedings of the KIEE Conference
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• 1998.07f
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• pp.2130-2132
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• 1998

With the increasing demands for clean environment, development of air cleaning systems has been received increasing attention. EP is usually used for air cleaning in the coal power plant. One of the key technology in the EP is high voltage pulse power supply, which affects the performance of the overall system. In this study, high voltage micro pulse power supply for the EP is developed for a 500MW coal power plant. The power supply has a dc source and a pulse one. The ratings of the dc and pulse source are 60kV, 800mA and 70kV, 400mA respectively.