• Title/Summary/Keyword: protection switching

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Fabrication of Ultra Fast Recovery Diodes using Proton Irradiation Technique (양성자 주입 기술을 이용한 초고속 회복 다이오드의 제작)

  • Lee, Kang-Hee;Kim, Byoung-Gil;Lee, Yong-Hyun;Baek, Jong-Mu;Lee, Jae-Sung;Bae, Young-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.12
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    • pp.1308-1313
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    • 2004
  • Proton irradiation technology was used for the improvement of power diode switching characteristics. Proton irradiation was carried out at the energies of 2.32 MeV, 2.55 MeV, 2.97 MeV so that the projection range of irradiated proton would be at the metallurgical junction, depletion region and neutral region of pn diode, respectively. Dose conditions were varied into three conditions of 1${\times}$10$^{11}$ cm$^{-2}$ , 1${\times}$10$^{12}$ cm$^{-2}$ , 1${\times}$10$^{13}$ cm$^{-2}$ at each condition of energies. Characterization of the device was performed by I-V(current-voltage), C-V(capacitance-voltage) and trr(reverse recovery time) measurement. At the optimum condition of irradiation, the reverse recovery time of device has been reduced about 1/5 compared to that of original un-irradiated device.

Design of the Driver IC for 500 V Half-bridge Converter using Single Ended Level Shifter with Large Noise Immunity (잡음 내성이 큰 단일 출력 레벨 쉬프터를 이용한 500 V 하프브리지 컨버터용 구동 IC 설계)

  • Park, Hyun-Il;Song, Ki-Nam;Lee, Yong-An;Kim, Hyoung-Woo;Kim, Ki-Hyun;Seo, Kil-Soo;Han, Seok-Bung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.8
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    • pp.719-726
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    • 2008
  • In this paper, we designed driving IC for 500 V resonant half-bridge type power converter, In this single-ended level shifter, chip area and power dissipation was decreased by 50% and 23.5% each compared to the conventional dual-ended level shifter. Also, this newly designed circuit solved the biggest problem of conventional flip-flop type level shifter in which the power MOSFET were turned on simultaneously due to the large dv/dt noise. The proposed high side level shifter included switching noise protection circuit and schmmit trigger to minimize the effect of displacement current flowing through LDMOS of level shifter when power MOSFET is operating. The designing process was proved reasonable by conducting Spectre and PSpice simulation on this circuit using 1${\mu}m$ BCD process parameter.

Design of the High Voltage Gate Driver IC for 300W Half-Bridge Converter Using $1{\mu}m$ BCD 650V process ($1{\mu}m$ BCD 650V 공정을 이용한 300W 하프-브리지 컨버터용 고전압 구동IC의 설계)

  • Song, Ki-Nam;Park, Hyun-Il;Lee, Yong-An;Kim, Hyoung-Woo;Kim, Ki-Hyun;Seo, Kil-Soo;Han, Seok-Bung
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.463-464
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    • 2008
  • As the demands of LCD and PDP TV are increasing, the high performance HVICs(High Voltage Gate Driver ICs) technology is becoming more necessary. In this paper, we designed the HVIC that has enhanced noise immunity and high driving capability. It can operate at 500KHz switching frequency and permit 600V input voltage. High-side level shifter is designed with noise protection circuit and schmitt trigger. Therefore it has very high dv/dt immunity, the maximum being 50V/ns. The HVIC was designed using $1{\mu}m$ BCD 650V process and verified by Spectre and PSpice of Cadence inc. simulation.

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Module-Type Switching Rectifier for Cathodic Protection of Underground and Maritime Metallic Constructions (지하매설 및 해양 금속구조물 음극방식용 모듈 타입 스위칭 정류기)

  • Moon Sang-Ho;Kim Bo-Kyoung;Kim In-Dong;Nho Eui-Cheol;Kwon Young-Won;Jeong Seong-Woo;Lim Heon-Ho
    • Proceedings of the KIPE Conference
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    • 2002.07a
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    • pp.529-532
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    • 2002
  • 본 과제를 통해 금속 구조물 음극 방식용 고성능 스위칭 정류기를 개발하였다. 개발된 정류기 회로는 크게 두 부분, 즉 1대로 구성된 AC/DC 컨버터부와 4대로 구성된 Module Type DC/DC 컨버터부로 되어 있다. AC/DC 컨버터는 IGBT PWM Rectifier로서 입력전압의 역률을 거의 1로 제어하고 있으며 또한 DC Link 전압을 일정하게 제어하고 있다. Module Type DC/DC 컨버터는 ZCS/ZVS 스위칭 동작을 통하여 스위칭 손실 감소와 함께 고주파 동작을 가능하게 하여, 입력측과 출력측의 전기적 절연을 위한 변압기로 고주파 변압기를 사용할 수 있게 하였다. 이로 인해 시스템의 부피와 무게를 현저히 감소시켰다. 본 과제에서 개발한 방식용 정류기 기술은 다른 유사 분야에의 적용도 가능한 것으로 사료된다.

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Development of the 120kV/70A High Voltage Switching Circuit with MOSFETs Operated by Simple Gate Drive Unit (120kV/70A MOSFETs Switch의 구동회로 개발)

  • Song In Ho;Shin H. S.;Choi C. H.
    • Proceedings of the KIPE Conference
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    • 2002.07a
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    • pp.707-710
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    • 2002
  • A 120kV/70A high voltage switch has been installed at Korea Atomic Energy Research Institute in Taejon to supply power with Korea Superconducting Tokamak Advanced Research (KSTAR) Neutral Beam Injection (NBI) system. NBI system requires fast cutoff of the power supply voltage for protection of the grid when arc detected and fast turn-on the voltage for sustaining the beam current. Therefore the high voltage switch and arc current detection circuit are important part of the NBI power supply and there are much need for high voltage solid state switches in NBI system and a broad area of applications. This switch consisted of 100 series connected MOSFETs and adopted the proposed simple and reliable gate drive circuit without bias supply, Various results taken during the commissioning phase with a 100kW resistive load and NBI source are shown. This paper presents the detailed design of 120kV/70A high voltage MOSFETs switch and simple gate drive circuit. Problems with the high voltage switch and gate driver and solutions are also presented.

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A Study on ASM Pulsed Power Generator for Non-thermal Plasma Applications (저온 플라즈마 발생을 위한 ASM 방식의 펄스파워 발생장치에 관한 연구)

  • Yang, Chun-Suk;Chung, Yong-Ho;Kim, Han-Joon
    • Proceedings of the KIEE Conference
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    • 1999.07e
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    • pp.2035-2037
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    • 1999
  • This paper describes an ASM(All Solid-state Modulator) pulsed power generator for non-thermal plasma applications. The proposed generator can produce 20kV, 500A, 100ns pulses at repetition rates up to 10kHz, and it is composed of 30 series connections of power circuit card assembly which contains paralleled MOSFETs, MOSFET drivers, energy storage capacitors and specially designed 1:1 pulse transformer. Higher pulse voltages and currents can easily be obtained by increasing the numbers of series and parallel connections of power circuit card and MOSFETs, respectively. Component layouts are optimized to minimize the leakage inductance and the voltage spikes across switching devices. Especially it put emphasis on the over-current protection (including short circuit) for the reliable operation in real situations. Experimental results show that the proposed pulser is very efficient in air pollution control application and could be useful for other applications such as synthesis of nanosize powders and non-thermal food processing.

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The Development of Dual Structured Power Management System (이중화 구조를 가진 변전소자동화시스템의 개발)

  • Woo, Chun-Hee;Lee, Bo-In
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.59 no.3
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    • pp.275-288
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    • 2010
  • In order to improve the quality of electricity in large scale power systems, stability of power system has to be achieved. This can be done by the means of preventative diagnosis of power equipments and protection, monitoring and control of the power system. Since the recent adoption of digital controllers, an improvement in stability was observed; in particular, IED, which contained self-diagnostic abilities such as fault tolerance, allowed for automatic recovery via redundancy or switching-over functions should there be faults with the equipments. Furthermore, communication lines have been hugely simplified, thus adding to the improvement in stability significantly. Taking these error reports and forecasting emergency reports and by effectively responding to them in the overiding controlling systems, high levels of system stability can be obtained. Power Management System that is being applied to automated power sub-stations, takes the IEC61850 international standard as its specification. In this paper, additional research into achieving stability of already developed PMS system and also the stability of the overall system was carried out, and the results of development of communication servers, which play a pivotal role in connecting systems, are stated.

The Arcing Faults Simulation and Adaptive Autoreclosure Strategy for 765 kV Transmission Line Protection (765 kV 송전선로 보호를 위한 아크사고 시뮬레이션 및 적응적 자동재폐로 대책)

  • Ahn, Sang-Pil;Kim, Chull-Hwan
    • The Transactions of the Korean Institute of Electrical Engineers A
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    • v.48 no.11
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    • pp.1365-1373
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    • 1999
  • In many countries including Korea, in order to transmit the more electric power, the higher transmission line voltage is inevitable. So, a rapid reclosing scheme is important for EHV/UHV transmission lines to ensure requirements for high reliability of main lines. A critical aspect of reclosing operation is the extinction of the secondary arc since it must extinguish before successful reclosure can occur. Therefore the accurate simulation techniques of arcing faults are of importance. And successful reclosing switching can be accomplished by adopting a proper method such as HSGS and hybrid scheme to reduce the secondary arc extinction time. First of all, this paper discusses a suggested arc model, which have time dependent resistance for primary arc and piecewise linear approximated arc model for secondary arc. And this simulation technique is applied to Korean 765 kV transmission lines. Also hybrid scheme is simulated and evaluated for the purpose of shortening dead time. For adaptive reclosing scheme, variable dead time control algorithm is suggested. Two kinds of algorithm are tested. One is max tracking algorithm and the other is rms tracking algorithm. According to simulation results, rms tracking has less errors than max tracking. Therefore rms tracking is applied to Korean 765 kV transmission lines with hybrid scheme.

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The Development of 440V, 500KVA Inverter System using the IGBT Devices (440V, 500KVA IGBT Type 인버터의 개발)

  • Kim, J.K.;Choi, U.D.;Jung, M.K.;Kim, M.C.;Yun, J.H.;Son, J.G.
    • Proceedings of the KIEE Conference
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    • 1993.07b
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    • pp.749-752
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    • 1993
  • This paper deals with the development of three phase 440[V], 500[KVA] Inverter system using the IGBT Devices. IGBT's have been used very successfully in variable frequency induction motor drive equipment. Problems associated with power devices characteristics when power devices are operated in parallel, such as balanced switching behavior and thermal stability, can be solved by using NPT type IGBT's. By Experimental results, it is confirmed that the voltage overshoot and reverse recovery current was very low. The equipment had proved to be reliable and short circuit proof. In addition, the performances in term of thermal characteristics, protection functions and stability are satisfactory.

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Design of a step-up DC-DC Converter using a 0.18 um CMOS Process (0.18 um CMOS 공정을 이용한 승압형 DC-DC 컨버터 설계)

  • Lee, Ja-kyeong;Song, Han-Jung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.17 no.6
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    • pp.715-720
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    • 2016
  • This paper proposes a PWM (Pulse Width Modulation) voltage mode DC-DC step-up converter for portable devices. The converter, which is operated with a 1 MHz switching frequency, is capable of reducing the mounting area of passive devices, such as inductor and capacitor, and is suitable for compact mobile products. This step-up converter consists of a power stage and a control block. The circuit elements of the power stage are an inductor, output capacitor, MOS transistors Meanwhile, control block consist of OPAMP (operational amplifier), BGR (band gap reference), soft-start, hysteresis comparator, and non-overlap driver and some protection circuits (OVP, TSD, UVLO). The hysteresis comparator and non-overlapping drivers reduce the output ripple and the effects of noise to improve safety. The proposed step-up converter was designed and verified in Magnachip/Hynix 0.18um 1-poly, 6-metal CMOS process technology. The output voltage was 5 V with a 3.3 V input voltage, output current of 100 mA, output ripple less than 1% of the output voltage, and a switching frequency of 1 MHz. These designed DC-DC step-up converters could be applied to the Personal Digital Assistants(PDA), cellular Phones, Laptop Computer, etc.