• Journal of Power Electronics
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• 제4권3호
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• pp.138-151
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• 2004

In this paper, a constant frequency phase shifting PWM-controlled voltage source full bridge-type series load resonant high-frequency inverter using the $4^{th}$ generation IGBT power modules is presented for innovative consumer electromagnetic induction heating applications, such as a hot water producer, steamer and super heated steamer. The bridge arm side link passive capacitive snubbers in parallel with each power semiconductor device and AC load side linked active edge inductive snubber-assisted series load resonant tank soft switching inverter with a constant frequency phase shifted PWM control scheme is evaluated and discussed on the basis of the simulation and experimental results. It is proved from a practical point of view that the series load resonant and edge resonant hybrid high-frequency inverter topology, what is called, DE class type, including the variable-power variable-frequency regulation function can expand zero voltage soft switching commutation area even under low output power setting ranges, which is more suitable and acceptable for newly developed induction heated dual pack fluid heaters. Furthermore, even the lower output power regulation mode of this high-frequency load resonant tank inverter circuit is verified so that this inverter can achieve ZVS with the aid of the single auxiliary inductor snubber.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2005년도 전력전자학술대회 논문집
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• pp.774-777
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• 2005

In this paper, a constant frequency phase shifting PWM controlled voltage source full bridge-type series load resonant high-frequency inverter using the IGBT power modules is presented for innovative consumer electromagnetic induction heating applications such as a hot water producer, steamer and super heated steamer. The full bridge arm side link passive quasi-resonant capacitor snubbers in parallel with the each power semiconductor device and high frequency AC load side linked active edge inductive snubber-assisted series load resonant tank soft switching inverter with a constant frequency phase shifted PWM control scheme is discussed and evaluated on the basis of the simulation and experimental results. It is proved from a practical point of view that the series load resonant and edge resonant hybrid high-frequency soft switching PWM inverter topology, what is called class DE type. including the variable-power variable-frequency(VPVF) regulation function can expand zero voltage soft switching commutation range even under low output power setting ranges, which is more suitable and acceptable for induction heated dual packs fluid heater developed newly for consumer power utilizations. Furthermore, even in the lower output power regulation mode of this high-frequency load resonant tank high frequency inverter circuit it is verified that this inverter can achieve ZVS with the aid of the single auxiliary inductor snubber.

• Journal of the Optical Society of Korea
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• 제18권4호
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• pp.307-316
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• 2014

Improved power conversion efficiency of hybrid solar cells with ITO/ZnO seed layer/ZnO NRs/ZnS QDs/P3HT/PCBM/Ag structure was obtained by optimizing the growth period of ZnO nanorods (NRs). ZnO NRs were grown using a hydrothermal method on ZnO seed layers, while ZnS quantum dots (QDs) (average thickness about 24 nm) were fabricated on the ZnO NRs by the successive ionic layer adsorption and reaction (SILAR) technique. Morphology, crystalline structure and optical absorption of layers were analyzed by a scanning electron microscope (SEM), X-ray diffraction (XRD) and UV-Visible absorption spectra, respectively. The XRD results implied that ZnS QDs were in the cubic phase (sphalerite). Other experimental results showed that the maximum power conversion efficiency of 4.09% was obtained for a device based on ZnO NR10 under an illumination of one Sun (AM 1.5G, $100mW/cm^2$).

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2017년도 춘계학술대회 논문집
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• pp.107-107
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• 2017

전자제품의 성능이 향상됨에 따라서 전자제품에 사용되는 부품의 고집적화가 필연적으로 요구되고 있으며, 고집적화 된 전자제품의 방열(heat dissipation)에 관한 문제점이 대두되고 있다. 방열은 전자기기의 성능과 수명을 유지하는데 있어서 중요한 문제 중 하나로서 방열 효과를 높이기 위해 다양한 연구 개발이 진행 중이다. 방열에 사용되는 소재로는 Cu가 있으며, 저렴한 가격과 상대적으로 높은 방열 효율을 가지는 장점이 있다. Cu는 전기 도금 증착 방법을 사용하여왔으나, 전기도금 방식으로 증착된 Cu 방열판은 제품에 열이 축적될 경우 Cu와 substrate 사이의 residual stress로 인해 박리나 뒤틀림 현상 등이 발생하여 high power를 사용하는 device의 방열 소재로 사용하기에는 개선해야 할 문제점이 있다. 이러한 문제점을 극복하기 위한 방법으로 magnetron sputter 증착 방법이 있으며, magnetron sputter은 대면적화가 용이하고, 다양한 물질의 증착이 가능한 장점으로 인해 hard coating 또는 thin film 증착과 같은 공정에 사용되고 있다. 특히 증착된 film의 특성을 조절하기 위해서 magnetron sputter에 pulse 또는 ICP (inductively coupled plasma) assisted 등을 적용하여 plasma 특성을 조절하는 방법 등에 관한 연구가 보고되고 있다. 본 연구에서는 pulsed magnetron sputtering 방식을 이용하여 증착된 Cu film 특성 변화를 확인하였다. 다양한 pulsing frequency와 pulsing duty ratio 조건에서, Si substrate 위에 증착된 Cu film과의 residual stress 변화를 측정하였다. Pulse duty ratio가 90% 에서 60%로 감소함에 따라서 Cu film의 residual stress가 감소하였고, pulsing frequency가 증가함에 따라 Cu film의 residual stress가 감소하는 것을 확인하였다. 증착 조건에 따른 plasma의 특성 분석을 위하여 oscilloscope를 이용하여 voltage와 current를 측정하였고, Plasma Sampling Mass spectrometer 를 이용하여 ion energy의 변화를 측정하였다. 이를 통해 plasma 특성 변화가 증착된 Cu film에 미치는 영향과 residual stress의 변화에 대한 연관성에 대하여 확인할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.408-408
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• 2012

It is well known that magnetic random access memory (MRAM) is nonvolatile memory devices using ferromagnetic materials. MRAM has the merits such as fast access time, unlimited read/write endurance and nonvolatility. Although DRAM has many advantages containing high storage density, fast access time and low power consumption, it becomes volatile when the power is turned off. Owing to the attractive advantages of MRAM, MRAM is being spotlighted as an alternative device in the future. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal- oxide semiconductor (CMOS). MTJ stacks are composed of various magnetic materials. FePt thin films are used as a pinned layer of MTJ stack. Up to date, an inductively coupled plasma reactive ion etching (ICPRIE) method of MTJ stacks showed better results in terms of etch rate and etch profile than any other methods such as ion milling, chemical assisted ion etching (CAIE), reactive ion etching (RIE). In order to improve etch profiles without redepositon, a better etching process of MTJ stack needs to be developed by using different etch gases and etch parameters. In this research, influences of $O_2$ gas on the etching characteristics of FePt thin films were investigated. FePt thin films were etched using ICPRIE in $CH_4/O_2/Ar$ gas mix. The etch rate and the etch selectivity were investigated in various $O_2$ concentrations. The etch profiles were studied in varying etch parameters such as coil rf power, dc-bias voltage, and gas pressure. TiN was employed as a hard mask. For observation etch profiles, field emission scanning electron microscopy (FESEM) was used.

• 전기학회논문지
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• 제60권12호
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• pp.2265-2269
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• 2011

1 kV high-voltage GaN Schottky diode is realized using GaN-on-Si template by oxidizing Ni-Schottky contact. The Auger electron spectroscopy (AES) analysis revealed the formation of $NiO_x$ at the top of Schottky contact. The Schottky contact was changed to from Ni/Au to Ni/Ni-Au alloy/Au/$NiO_x$ by oxidation. Ni diffusion into AlGaN improves the Schottky interface and the trap-assisted tunneling current. In addition, the reverse leakage current and the isolation-leakage current are efficiently suppressed by oxidation. The isolation-leakage current was reduced about 3 orders of magnitudes. The reverse leakage current was also decreased from 2.44 A/$cm^2$ to 8.90 mA/$cm^2$ under -100 V-biased condition. The formed group-III oxides ($AlO_x$ and $GaO_x$) during the oxidation is thought to suppress the surface leakage current by passivating surface dangling bonds, N-vacancies and process damages.

• Transactions on Electrical and Electronic Materials
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• 제9권1호
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• pp.1-5
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• 2008

ZnS is an attractive material for future optical and electrical devices since it has a direct and wide band gap to provide blue emission at room temperature. In this study, inductively coupled $BCl_3/Ar$ plasma was used to etch ZnS:Mn thin films. The maximum etch rate of 164.2 nm/min for ZnS:Mn was obtained at a $BCl_3(20)/Ar(80)$ gas mixing ratio, an rf power of 700 W, a dc bias voltage of -200V, a total gas flow of 20 sccm, and a chamber pressure of 1Pa. The etch behaviors of ZnS:Mn thin films under various plasma parameters showed that the ZnS:Mn were effectively removed by the chemically assisted physical etching mechanism. The surface reaction of the ZnS:Mn thin films was investigated by X-ray photoelectron spectroscopy. The XPS analysis revealed that Mn had detected on the surface ZnS:Mn etched in $BCl_3/Ar$ plasma.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.380-381
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• 2012

Bioinspired sea urchin-like structures were fabricated on silicon by inductively coupled plasma (ICP) etching using lens-like shape hexagonally patterned photoresist (PR) patterns and subsequent metal-assisted chemical etching (MaCE) [1]. The lens-like shape PR patterns with a diameter of 2 ${\mu}m$ were formed by conventional lithography method followed by thermal reflow process of PR patterns on a hotplate at $170^{\circ}C$ for 40 s. ICP etching process was carried out in an SF6 plasma ambient using an optimum etching conditions such as radio-frequency power of 50 W, ICP power of 25 W, SF6 flow rate of 30 sccm, process pressure of 10 mTorr, and etching time of 150 s in order to produce micron structure with tapered etch profile. 15 nm thick Ag film was evaporated on the samples using e-beam evaporator with a deposition rate of 0.05 nm/s. To form Ag nanoparticles (NPs), the samples were thermally treated (thermally dewetted) in a rapid thermal annealing system at $500^{\circ}C$ for 1 min in a nitrogen environment. The Ag thickness and thermal dewetting conditions were carefully chosen to obtain isolated Ag NPs. To fabricate needle-like nanostructures on both the micron structure (i.e., sea urchin-like structures) and flat surface of silicon, MaCE process, which is based on the strong catalytic activity of metal, was performed in a chemical etchant (HNO3: HF: H2O = 4: 1: 20) using Ag NPs at room temperature for 1 min. Finally, the residual Ag NPs were removed by immersion in a HNO3 solution. The fabricated structures after each process steps are shown in figure 1. It is well-known that the hierarchical micro- and nanostructures have efficient light harvesting properties [2-3]. Therefore, this fabrication technique for production of sea urchin-like structures is applicable to improve the performance of light harvesting devices.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2012년도 춘계학술대회
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• pp.896-898
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• 2012

최근 여러 나라들이 해양산업 개발에 관심을 가지면서 다양한 기술들이 개발되고 발전하고 있다. 이중 해양 환경에서 사용하는 무선 통신은 그 연구의 역사가 오래되었으며, 지금도 발전하고 있는 분야이다. 해양에서 무선을 이용한 환경 관측은 다양한 전파 매체를 통해 데이터 전송을 한다. 기술의 발달함에 따라 데이터 전송에서 문제점인 전원의 제한, 거리의 제한, 해수에 의한 부식, 수밀 등의 부분의 해양관측의 제약 요소 등에 관해서도 많은 발전을 거듭하였다. 이와 함께 점점 더 다양화되는 요구 데이터들과 실시간 관측 및 데이터 전송 면에서는 육상과 같이 다양한 통신방식과의 연계가 미흡한 실정이다. 이에 따라 본 논문에서는 연안환경, 어장 환경 등에서 활용 가능한 RF 통신을 이용한 Ad-Hoc Network를 구축하고 영상매체를 통한 실시간 관측과 센서를 이용한 환경 변화에 대한 데이터 수집을 통하여 효율적으로 관리할 수 있는 무선 관리 시스템을 구축하고자 한다.

• 정보처리학회논문지A
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• 제13A권5호
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• pp.435-444
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• 2006

위치기반서비스(LBS: Location-Based Services)의 이용자가 급증함으로써 최근 위치 트리거(Location Trigger) 서비스에 대한 다양한 응용분야가 등장하고 있다. 위치 트리거는 사용자의 이동 위치를 감지하여 특정한 지역에 진입, 존재, 이탈할 경우 사용자에게 단문문자서비스(SMS), 전자메일 등을 통하여 알리거나 또는 사용자에 의해 미리 정의된 특정한 서비스를 제공하는 기술이다 기존에 이러한 위치 트리거 기술은 위치 제공 서버에 주기적으로 위치정보를 요청하여 처리해 왔으나 LBS 서비스 가입자가 증가할수록 서버 및 통신 부하로 인하여 시스템의 성능 저하를 초래하게 된다. 이에 본 논문에서는 위치 트리거를 처리함에 있어서 이동통신망의 위치서버의 부하를 줄이고 모바일 단말기에 임베디드 된 GPS 디바이스의 전력 소모량을 최소화하는 멀티레벨 위치 트리거 방법에 대하여 연구하였다. 실제 본 논문에서 제시하는 방법을 설계하고 테스트베드를 구축하여 성능을 평가함으로써 위치 트리거 기술의 성능 향상에 기여하였다.