• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.3
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• pp.46-55
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• 2016

This work proposes a 13b 100MS/s 45nm CMOS ADC with a high dynamic performance for IF-domain high-speed signal processing systems based on a four-step pipeline architecture to optimize operating specifications. The SHA employs a wideband high-speed sampling network properly to process high-frequency input signals exceeding a sampling frequency. The SHA and MDACs adopt a two-stage amplifier with a gain-boosting technique to obtain the required high DC gain and the wide signal-swing range, while the amplifier and bias circuits use the same unit-size devices repeatedly to minimize device mismatch. Furthermore, a separate analog power supply voltage for on-chip current and voltage references minimizes performance degradation caused by the undesired noise and interference from adjacent functional blocks during high-speed operation. The proposed ADC occupies an active die area of $0.70mm^2$, based on various process-insensitive layout techniques to minimize the physical process imperfection effects. The prototype ADC in a 45nm CMOS demonstrates a measured DNL and INL within 0.77LSB and 1.57LSB, with a maximum SNDR and SFDR of 64.2dB and 78.4dB at 100MS/s, respectively. The ADC is implemented with long-channel devices rather than minimum channel-length devices available in this CMOS technology to process a wide input range of $2.0V_{PP}$ for the required system and to obtain a high dynamic performance at IF-domain input signal bands. The ADC consumes 425.0mW with a single analog voltage of 2.5V and two digital voltages of 2.5V and 1.1V.

• Korean Chemical Engineering Research
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• v.60 no.2
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• pp.249-254
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• 2022

With the rapid advance of the semiconductor and Information and communication technologies, remote environment monitoring technology, which can detect and analyze surrounding environmental conditions with various types of sensors and wireless communication technologies, is also drawing attention. However, since the conventional remote environmental monitoring systems require external power supplies, it causes time and space limitations on comfortable usage. In this study, we proposed the concept of the self-powered remote environmental monitoring system by supplying the power with the levitation-electromagnetic generator (L-EMG), which is rationally designed to effectively harvest biomechanical energy in consideration of the mechanical characteristics of biomechanical energy. In this regard, the proposed L-EMG is designed to effectively respond to the external vibration with the movable center magnet considering the mechanical characteristics of the biomechanical energy, such as relatively low-frequency and high amplitude of vibration. Hence the L-EMG based on the fragile force equilibrium can generate high-quality electrical energy to supply power. Additionally, the environmental detective sensor and wireless transmission module are composed of the micro control unit (MCU) to minimize the required power for electronic device operation by applying the sleep mode, resulting in the extension of operation time. Finally, in order to maximize user convenience, a mobile phone application was built to enable easy monitoring of the surrounding environment. Thus, the proposed concept not only verifies the possibility of establishing the self-powered remote environmental monitoring system using biomechanical energy but further suggests a design guideline.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.7
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• pp.122-130
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• 2013

This work proposes a 12b 100MS/s 45nm CMOS four-step pipeline ADC for high-speed digital communication systems requiring high resolution, low power, and small size. The input SHA employs a gate-bootstrapping circuit to sample wide-band input signals with an accuracy of 12 bits or more. The input SHA and MDACs adopt two-stage op-amps with a gain-boosting technique to achieve the required DC gain and high signal swing range. In addition, cascode and Miller frequency-compensation techniques are selectively used for wide bandwidth and stable signal settling. The cascode current mirror minimizes current mismatch by channel length modulation and supply variation. The finger width of current mirrors and amplifiers is laid out in the same size to reduce device mismatch. The proposed supply- and temperature-insensitive current and voltage references are implemented on chip with optional off-chip reference voltages for various system applications. The prototype ADC in a 45nm CMOS demonstrates the measured DNL and INL within 0.88LSB and 1.46LSB, respectively. The ADC shows a maximum SNDR of 61.0dB and a maximum SFDR of 74.9dB at 100MS/s, respectively. The ADC with an active die area of $0.43mm^2$ consumes 29.8mW at 100MS/s and a 1.1V supply.

• Journal of the Institute of Convergence Signal Processing
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• v.16 no.2
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• pp.74-82
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• 2015

In this study, a BMW plant process control system model which produces BMW is suggested and the BMW plant process controller with the following functions is developed. The first function is to operate the electronic overload relays to stop the blower for a certain period of time and to re-operate it again when the blower is overloaded. The second function is to close the motor operated valve automatically in case of power failure to prevent the circulation from the guided tank to the compost throwing tank and to block leak from the compost throwing tank due to the failure of ball valve. The third function is to transfer produced BMW from the concentration tank to 4 storage tanks for automatic managing of the BMW output. A device to measure the signal of the BMW plant process controller and a test equipment are developed. The designed BMW plant process controller is checked to see if it operates correctly according to the design specifications. The sequence control method based on BMW plant process controller is developed at a low cost in this study, so it is expected to bring improvements in the stability and the efficiency of system and to cause reductions in the operation and the management costs in the future.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.640-644
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• 1998

We have fabricated Sb/SiC(4H) Schottky barrier diode (SBD) of which characteristics compared with that of Ti/SiC(4H) SBD. The donor concentration of the n-type SiC(4H) obtained by capacitance-voltage (C-V) measurement was about $2.5{\times}10 ^{17}{\textrm}cm^{-3}$. The ideality factors of 1.31 was obtained from the slope of forward current-voltage (I-V) characteristics of Sb/SiC(4H) SBD at low current density. The breakdown field of Sb/SiC(4H) SBD under the reverse bias voltage was about $4.4{\times}10^2V$/cm. The built-in potential and the Schottky barrier height (SBH) of Sb/SiC(4H) SBD were 1.70V and 1.82V, respectively, which were determined by the analysis of C-V characteristics. The Sb/SiC(4H) SBH of 1.82V was higher than Ti/SiC(4H) SBH of 0.91V. However, the current density and reverse breakdown field of Sb/SiC(4H) were low as compared with those of Ti/SiC(4H). The Sb/SiC(4H), as well as the Ti/SiC(4H), can be utilized as the Shottky barrier contact for the high-power electronic device.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.3
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• pp.578-584
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• 2017

$SiO_2$ buffer layer (100 nm) has been deposited on PET substrate by electron beam evaporation. And then, IZTO (In-Zn-Sn-O) thin film has been deposited on $SiO_2$/PET substrate with different RF power of 30 to 60 W, working pressure, 1 to 7 mTorr, by RF magnetron sputtering. Structural, electrical and optical properties of IZTO thin film have been analyzed with various RF powers and working pressures. IZTO thin film deposited on the process condition of 50 W and 3 mTorr exhibited the best characteristics, where figure of merit was $4.53{\times}10^{-3}{\Omega}^{-1}$, resistivity, $4.42{\times}10^{-4}{\Omega}-cm$, sheet resistance, $27.63{\Omega}/sq.$, average transmittance (400-800 nm), 81.24%. As a result of AFM, all the IZTO thin film has no defects such as pinhole and crack, and RMS surface roughness was 1.147 nm. Due to these characteristics, IZTO thin film deposited on $SiO_2$/PET structure was found to be a very compatible material that can be applied to the next generation flexible display device.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.48 no.3
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• pp.1-12
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• 2011

Large-sized multi-touch screen is usually made using infrared rays. That is because it has technical constraints or cost problems to make the screen with the other ways using such as existing resistive overlays, capacitive overlay, or acoustic wave. Using infrared rays to make multi-touch screen is easy, but is likely to have technical limits to be implemented. To make up for these technical problems, two other methods were suggested through Surface project, which is a next generation user-interface concept of Microsoft. One is Frustrated Total Internal Reflection (FTIR) which uses infrared cameras, the other is Diffuse Illumination (DI). FTIR and DI are easy to be implemented in large screens and are not influenced by the number of touch points. Although FTIR method has an advantage in detecting touch-points, it also has lots of disadvantages such as screen size limit, quality of the materials, the module for infrared LED arrays, and high consuming power. On the other hand, DI method has difficulty in detecting touch-points because of it's structural problems but makes it possible to solve the problem of FTIR. In this thesis, we study the algorithms for effectively correcting the distort phenomenon of optical lens, and image processing algorithms in order to solve the touch detecting problem of the original DI method. Moreover, we suggest calibration algorithms for improving the accuracy of multi-touch, and a new tracking technique for accurate movement and gesture of the touch device. To verify our approaches, we implemented a table-based multi touch screen.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.8 no.2
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• pp.83-90
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• 2009

White LEDs(Light Emitting Diode) offer advantageous properties such as high brightness, improved reliability, lower power consumption, and long lifetimes. An LED is an electronic device that converts an electrical signal into a tight signal and is used not only in Optical Communication Indoor wireless optical illuminating rooms, but also for wireless optical communication systems. Currently, studies about these white LEDs have been being progressed, and in this raper, we discuss the multiplex and the multiple access method of VLC(Visible Light Communication) systems using white LEDs. In proposed system, CDMA(Code Division Multiple Access) apples to VLC system to reduce interference of VLC system, and improve capacity. The superiority of OOK modulation is presented in analysis of results by comparing VLC-CDMA communication system using OOK(On-off keying) modulation and BPSK modulation in AWGN(Additive White Gaussian Noise) channel and Diffuse channel. And we investigate the significance of a solution of interference by multipath by comparing BER in multipath channel and AWGN channel. In the proposed system, we assume Directed LOS(Line Of Sight) and Diffuse Link, and suppose VLC-CDMA using OOC(Optical Orthogonal Code) as methods to increase efficiency of system by removing ISI(Inter Symbol Interference) caused by multiple access, optical spreading code, and also present an analysis of its performance.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.509-514
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• 2020

The two key variables of an Si solar cell, i.e., emitter (n-type window layer) and base (p-type substrate) doping levels or concentrations, are studied using Medici, a 2-dimensional semiconductor device simulation tool. The substrate is p-type and 150 ㎛ thick, the pn junction is 2 ㎛ from the front surface, and the cell is lit on the front surface. The doping concentration ranges from 1 × 10¹⁰ cm^-3 to 1 × 10²⁰ cm^-3 for both emitter and base, resulting in a matrix of 11 by 11 or a total of 121 data points. With respect to increasing donor concentration (Nd) in the emitter, the open-circuit voltage (Voc) is little affected throughout, and the short-circuit current (Isc) is affected only at a very high levels of Nd, exceeding 1 × 10¹⁹ cm^-3, dropping abruptly by about 12%, i.e., from Isc = 6.05 × 10^-9 A·㎛^-1, at Nd = 1 × 10¹⁹ cm^-3 to Isc = 5.35 × 10^-9 A·㎛^-1 at Nd = 1 × 10²⁰ cm^-3, likely due to minority-carrier, or hole, recombination at the very high doping level. With respect to increasing acceptor concentration (Na) in the base, Isc is little affected throughout, but Voc increases steadily, i.e, from Voc = 0.29 V at Na = 1 × 10¹² cm^-3 to 0.69 V at Na = 1 × 10¹⁸ cm^-3. On average, with an order increase in Na, Voc increases by about 0.07 V, likely due to narrowing of the depletion layer and lowering of the carrier recombination at the pn junction. At the maximum output power (Pmax), a peak value of 3.25 × 10^-2 W·cm^-2 or 32.5 mW·cm^-2 is observed at the doping combination of Nd = 1 × 10¹⁹ cm^-3, a level at which Si is degenerate (being metal-like), and Na = 1 × 10¹⁷ cm^-3, and minimum values of near zero are observed at very low levels of Nd ≤ 1 × 10¹³ cm^-3. This wide variation in Pmax, even within a given kind of solar cell, indicates that selecting an optimal combination of donor and acceptor doping concentrations is likely most important in solar cell engineering.

• Journal of IKEEE
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• v.19 no.2
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• pp.193-200
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• 2015

In this paper, we propose the radiation measuring algorithm and the device composition using CMOS image sensor. The radiation measuring algorithm using CMOS image sensor is based on the radiation particle distinguishing algorithm projected to the CMOS image sensor and accumulated and average number of pixels of the radiation particles projected to dozens of images per second with CMOS image sensor. The radiation particle distinguishing algorithm projected to the CMOS image sensor measures the radiation particle images by dividing them into R, G and B and adjusting the threshold value that distinguishes light intensity and background from the particle of each image. The radiation measuring algorithm measures radiation with accumulated and average number of radiation particles projected to dozens of images per second with CMOS image sensor according to the preset cycle. The hardware devices to verify the suggested algorithm consists of CMOS image sensor and image signal processor part, control part, power circuit part and display part. The test result of radiation measurement using the suggested CMOS image sensor is as follows. First, using the low-cost CMOS image sensor to measure radiation particles generated similar characteristics to that from measurement with expensive GM Tube. Second, using the low-cost CMOS image sensor to measure radiation presented largely similar characteristics to the linear characteristics of expensive GM Tube.