• Journal of Advanced Marine Engineering and Technology
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• 제39권1호
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• pp.81-85
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• 2015

본 연구에서는 Poly (3-hexylthiophene-2,5-diyl) (P3HT):[6,6]-Phenyl C61 butyric acid methyl ester (PCBM)과 GaN를 이용하여 유무기 하이브리드 광전변환소자를 제작함에 있어서, P3HT:PCBM 활성층의 열처리가 소자의 단락전류밀도에 미치는 영향을 알아보았으며 이때 유기물의 농도와 혼합비율을 달리 하였다. 유기물 각각의 층을 코팅하여 층을 만들 때마다 열처리 한 경우, 즉 pre-annealing샘플과 pre-annealing 과정을 거쳐 제작된 소자 전체를 한 번 더 열처리하여 즉 post-annealing까지 행한 샘플을 비교하였다. 그 결과 post-annealing한 샘플이 더 높은 단락전류밀도의 값을 가졌고 이때 P3HT와 PCBM은 1wt%와 1:1 혼합비율에서 좋은 열처리 효과를 나타내었다.

• 열처리공학회지
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• 제25권2호
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• pp.85-89
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• 2012

Transparent conductive ZnO/Ag/ZnO (ZAZ) multilayer films were deposited by Radio frequency (RF) magnetron sputtering and direct current (DC) magnetron sputtering. The effects of post deposition vacuum annealing temperature on the structural, electrical and optical properties of the ZAZ multilayer films were investigated. The thickness of ZAZ films is kept constant at ZnO 50 nm/Ag 5nm/ZnO 45 nm, while the vacuum annealing temperatures were varied from 200 and $400^{\circ}C$, respectively. As-deposited ZAZ films exhibit a sheet resistance of $6.1{\Omega}/{\Box}$ and optical transmittance of 72.7%. By increasing annealing temperature to $200^{\circ}C$, the resistivity decreased to as low as $5.3{\Omega}/{\Box}$ and optical transmittance also increased to as high as 82.1%. Post-deposition annealing of ZAZ multilayer films lead to considerably lower electrical resistivity and higher optical transparency, simultaneously by increased crystallization of the films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.3-4
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• 2006

In this paper, a nickel silicide technology with post-silicidation annealing effect for thin film SOI devices is investigated in detail. Although lower resistivity Ni silicide can be easily obtained at low forming temperature, poor thermal stability and changing of characteristic are serious problems during the post silicidation annealing like ILD (Inter Layer Dielectric) deposition or metallization. So these effects are observed as deposited Ni thickness differently on As doped SOI (Si film 30nm). Especially, the sheet resistance of Ni thickness deposited 20nm was lower than 30nm before the post silicidation annealing. But after the post silicidation annealing, the sheet resistance was changed. Therefore, in thin film SOI MOSFETs or Ni-FUSI technology that the Si film is less than 50nm, it is important to decide the thickness of deposited Ni in order to avoid forming high resistivity silicide.

• 청정기술
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• 제15권3호
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• pp.202-209
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• 2009

질소 도핑된 $WO_3$ ($WO_3$:N) 막을 반응성 RF 마그네트론 스퍼터링을 이용하여 상온에서 증착한 다음, $300^{\circ}C$에서부터 $500^{\circ}C$의 온도 구간에서 후열처리(post-annealing)하였다. $WO_3$ 내 질소 음이온은 O 2p valence state와의 mixing effect 의해 광학적 밴드갭을 줄임으로써 장파장 영역의 빛을 흡수할 수 있었다. 더욱이 $350^{\circ}C$ 이상의 후열처리에 의해 $WO_3$:N의 결정성이 크게 향상됨을 발견하였으며, 동일 온도에서 열처리된 순수한 $WO_3$ 막보다 광전기화학 특성이 휠씬 우수한 셀 성능을 가짐을 알 수 있었다.

• 전기전자학회논문지
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• 제23권2호
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• pp.704-709
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• 2019

본 논문에서는 다양한 열처리(annealing) 조건에서 tunneling field effect transistor(TFET)의 전기적 특성을 연구 하였다. TFET 샘플은 수소 혼합 가스(4 %) 및 중수소($D_2$) 혼합 가스 (4 %)를 사용하여 열처리를 진행하였으며 측정은 노이즈 차폐실에서 진행되었다. 실험 결과, 열처리 전과 비교하여 열처리 공정 후에 subthreshold slope(SS)이 33 mV / dec만큼 감소함을 확인할 수 있었다. 그리고 측정 온도 범위에서 온도가 증가할수록 $V_G=3V$ 조건에서 10 기압의 중수소 혼합 가스에 대해 평균 31.2 %의 노이즈가 개선됨을 확인할 수 있었다. $D_2$ 혼합 가스로 메탈 증착 후 열처리 공정(post metal annealing)을 실시한 결과, $I_D=100nA$ 조건에서 평균 30.7 %의 노이즈가 감소되었음을 확인할 수 있다.

• 열처리공학회지
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• 제18권4호
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• pp.223-228
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• 2005

Tube hydroforming provides a number of advantages over conventional stamping process, including fewer secondary operation, weight reduction, assembly simplification, adaptability to forming of complex structural components and improved structural strength and stiffness. It can produce wide range of products such as subframe, engine cradle, and exhaust manifold. In this study, the effect of the heat treatment conditions such as post seam annealing (PSA) and bright annealing (BA) on the ovality and hydro-formability of steel tubes has been investigated. Hydroformabilities have been estimated by the bulging heights obtained at various processing parameters such as internal pressure, axial feeding and heat treatment conditions. The ovality and forming height are strongly influenced by material properties after heat treatments.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.460-461
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• 2009

We studied the effects of post-annealing treatment on poly(3-hexylthiophene)(P3HT, donor):[6,6]-phenyl $C_{61}$ butyric acid methyl ester(PCBM, acceptor) blend film as an active layer in the organic solar cells(OSCs). For the formation of the active layer, 3 wt.% P3HT:PCBM solution in chlorobenzene were deposited by spin-coating method. In order to optimize the performance of OSCs, the P3HT crystallization and the redistribution of PCBM cluster at P3HT:PCBM composition as a function of post-annealing condition from room temperature to $200^{\circ}C$ were measured by the Hall effect and the UV-vis Spectrophotometer. We thought that the improved efficiency in the OSCs with post-annealing treatment at $150^{\circ}C$ can be explained by the efficient separation or collection of the photogenerated excitons at donor-acceptor interface by P3HT crystallization.

• 한국전기전자재료학회논문지
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• 제19권7호
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• pp.611-617
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• 2006

We report the preparation of N doped, p-type ZnO films by post-annealing in $NH_3$ ambient. The properties were examined by XRD, Hall-effect measurement, PL, and SIMS. ZnO films showed better crystallinity and electron concentration of $10^{15}-10^{17}/cm^3$ with post-annealing in $NH_3$ ambient. These films were converted to p-type ZnO by activation thermal annealing process at $800^{\circ}C$ under $N_2$ ambient. The electrical properties of the p-type ZnO showed a hole concentration of $1.06\times10^{16}/cm^3$, a mobility of $15.8cm^2/V{\cdot}s$, and a resistivity of $40.18\Omega{\cdot}cm$. The N doped ZnO films showed a strong photoluminescence peak at 3.306 eV at 13 K, which is closely related to neutral acceptor bound excitons of the p-type ZnO:N. In the SIMS spectra, the incorporation of nitrogen was confirmed.

• 한국세라믹학회지
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• 제35권9호
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• pp.945-952
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• 1998

Ferroelectric Sr0.8Bi2.4Ta2O9 stock solutions were prepared by MOD(Metaloganic Decompostion) process. The phase transformation for the layered perovskite of the SBT thin films by changing RTA(Rapid her-mal Annealing) temperatuer from 700$^{\circ}C$to 780$^{\circ}C$ were observed using XRD and SEM. Layered perovskite phase began to appear above 740$^{\circ}C$ and then SBT thin films were annealed at 800$^{\circ}C$ for 1hr for its com-plete crystallization. The specimens showed well shaped hysteresis curves without post annealing that car-ried out after deposition of Pt top electrode. The SBT thin films showed the asymmetric ferroelectric pro-perties. It was confirmed that the properties were caused by interface effect to SBT and electrode by leak-age current density measurement and asymmetric properties reduced by post annealing. At post annealing temperature of 800$^{\circ}C$ remanant polarization values (2Pr) were 6.7 9 ${\mu}$C/cm2 and those of leakage current densities were 3.73${\times}$10-7 1.32${\times}$10-6 A/cm2 at 3, 5V respectively. Also bismuth bonding types of SBT thin film surface were observed by XPS.

• 한국세라믹학회지
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• 제43권3호
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• pp.185-192
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• 2006

The effects of annealing on structural and electrical properties of ITO/PES (Indium Tin Oxide/Polyethersulfone) films was investigated. Amorphous ITO thin films were grown on plastic substrates, PES using low temperature DC magnetron sputtering. Various post annealing techniques were attempted to research variations of microstructure and electrical properties: i) conventional thermal annealing, ii) excimer laser annealing, iii) UV irradiation. The electrical properties were obtained using Hall effect measurements and DC 4-point resistance measurement. The microstructural features were characterized by FESEM, XRD, Raman spectroscopy in terms of morphology and crystallinity. Optimized UV treatment exhibits the enhanced conductivity and crystallinity, compared to those of conventional thermal annealing.