• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.42.2-42.2
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• 2010

Transparent conducting oxides (TCOs) are of significant importance for their applications in various devices, such as light-emitting diodes, thin-film solar cells, organic light-emitting diodes, liquid crystal displays, and so on. In order for TCOs to contribute to the performance improvement of these devices, TCOs should have high transmittance and good electrical properties simultaneously. Sn-doped $In_2O_3$ (ITO) is the most commonly used TCO. However, indium is toxic and scarce in nature. Thus, ZnO has attracted a lot of attention because of the possibility for replacing ITO. In particular, group III impurity-doped ZnO showed the optoelectronic properties comparable to those of ITO electrodes. Al-doped ZnO exhibited the best performance among various doped ZnO films because of the high substitutional doping efficiency. However, in order for the Al-doped ZnO to replace ITO in electronic devices, their electrical and optical properties should further significantly be improved. In this connection, different ways such as a variation of deposition conditions, different deposition techniques, and post-deposition annealing processes have been investigated so far. Among the deposition methods, RF magnetron sputtering has been extensively used because of the easiness in controlling deposition parameters and its fast deposition rate. In addition, when combined with post-deposition annealing in a reducing ambient, the optoelectronic properties of Al-doped ZnO films were found to be further improved. In this presentation, we deposited Al-doped ZnO (ZnO:$Al_2O_3$ = 98:2 wt%) thin films on the glass and sapphire substrates using RF magnetron sputtering as a function of substrate temperature. In addition, the ZnO samples were annealed in different conditions, e.g., rapid thermal annealing (RTA) at $900^{\circ}C$ in $N_2$ ambient for 1 min, tube-furnace annealing at $500^{\circ}C$ in $N_2:H_2$=9:1 gas flow for 1 hour, or RTA combined with tube-furnace annealing. It is found that the mobilities and carrier concentrations of the samples are dependent on growth temperature followed by one of three subsequent post-deposition annealing conditions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.340-341
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• 2007

Thin film of ZnO was deposited on various substrate by Nd:YAG Pulsed Laser Deposition(PLD) with a wavelength of 355nm. Further more, Thin filme of ZnO conducted by various temperature conditions. The surface morphology of the ZnO thin film was investigated by X-Ray Diffraction(XRD) and Atomic Force Microscopy(AFM). Effects of various substrates and Temperature conditions were analyzed. The best properties were obtained on $600^{\circ}C$ with post-deposition annealing at $600^{\circ}C$ in flowing $O_2$ atmosphere for several hours.

• 한국전기전자재료학회논문지
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• 제24권5호
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• pp.370-373
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• 2011

We investigated the effects of low temperature ($500^{\circ}C$) $O_2$ annealing on the characteristics of hafnium silicate ($HfSi_xO_y$) films deposited on a Si substrate by atomic layer deposition (ALD). We found that the post deposition annealing under oxidizing ambient causes the oxidation of residual Hf metal components, resulting in the improvement of electrical characteristics such as flat band voltage shift (${\Delta}V_{fb}$) by hysteresis without oxide capacitance reduction. We suggest that post deposition annealing under oxidizing ambient is necessary to improve the electrical characteristics of $HfSi_xO_y$ films deposited by ALD.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1277_1278
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• 2009

Amorphous oxide semiconductor $InGaZnO_4$(IGZO) is a very promising candidate of channel layer in transparent thin film trasisitor(TTFT) because of its high mobility and high transparency in visible light region. Amorphous IGZO films were deposited at room temperature on a fused silica substrate using pulsed laser deposition method. In-situ post annealing was carried out at 150-450C right after film deposition. The $O_2$ partial pressures during the deposition and the post annealing was fixed to 10mTorr. The electron transport properties of the amorphous IGZO films were improved by thermal annealing. The temperature range in which the improvement of the electrical properties, was 150C~300C.

• Journal of Magnetics
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• 제12권3호
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• pp.129-132
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• 2007

Bismuth-substituted yttrium iron garnet (Bi:YIG, $Bi_{0.5}Y_{2.5}Fe_5O_{12}$) films were deposited with aerosol deposition method and their magnetic and optical properties were investigated as a function of annealing temperature. Since the ceramic films deposited with aerosol deposition method have not a perfect crystal structure due to non-uniform internal stress occurred by mechanical collision during their deposition, the post annealing could be a key process to release its internal stress and to improve its micro structure for optimizing the magnetic and magneto-optic properties of films. The crystallinity of Bi: YIG film was improved with increase of annealing temperature, and the saturation magnetization increased up to 87 emu/cc at $800^{\circ}C$. The Faraday rotation increased up to $1.4deg/{\mu}m$ by annealing at $700^{\circ}C$ around the wavelength of $0.5{\mu}m$. The optical transmittance of the Bi:YIG film was also improved in visible region.

• 한국세라믹학회지
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• 제35권1호
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• pp.88-96
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• 1998

The structural and electrical properties of titanium dioxide(TiO2) thin films deposited on p-type (100) si and 4$^{\circ}$off(100) Si substartes by metalorganic chemical vapor deposition (MOCVD) have been studied with post rapid thermal annealing. TiO2 thin films of anatase phase were grown at 300-500$^{\circ}C$ using titanium post rapid thermal annealing at a temperature of 800$^{\circ}C$ for 30sec. rutile phase was observed in the condition of the deposition temperature over 350$^{\circ}C$ in the ambient air atmosphere and at 500$^{\circ}C$ in cacuu,. SEM and AFM study show-ed surface roughness were increased slightly from 40${\AA}$to 55${\AA}$ after annealing due to grain growth and phase transformation. From capacitane-voltage measurement of Al/TiO2./p-Si structure after annealing we obtained ideal capacitance-voltage characteristics of MOS structure with dielectric constant of 16-22 in case of (100) Si and about 30- in case of 4$^{\circ}$off(100) Si but showed the higher leakage current.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.125-128
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• 2000

ZnO thin films on silicon substrates have been deposited by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the effect of oxygen post-annealing treatment on the property of ZnO thin films, deposited film has been annealed at the substrate temperature of $440^{\circ}C$. After post-annealing treatment in the oxygen ambient, the stoichiometry of ZnO film has been characterized be improved which results in higher UV emission intensity of photoluminescence.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.846-849
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• 2009

In this study, we manufactured polymer-LED using light emitting copolymer as the active layer. After cathode layer deposition, we did post-annealing at $150^{\circ}C$ during 10 min in $N_2$ glove box. Then, we confirmed that the efficiency of the device was significantly enhanced by post annealing process. Its value was increased from 0.18(cd/A) to 1.32(cd/A), approximately 7 times. This phenomenon is a result of improved stability between polymer and metal cathode for injection of electrons as the contact density increases.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1829-1831
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• 2005

Ferroelectric $Bi_{3.25}Nd_{0.75}Ti_3O_{12}$(BNdT) thin films were proposed for capacitor of FeRAM. The BNdT thin films were grown on Pt/Ti $SiO_2/P-Si(100)$ substrates by the RF magnetron sputtering deposition. The dielectric properties of the BNdT were investigated by varying post-annealing temperatures. Increasing post-annealing temperature, the (117) peak was increased. An increase of rod type grains of BNdT films with increasing post-annealing temperature was observed by the Field Emission Scanning Electron Microscopy(FE-SEM). The dielectric constant and dielectric loss of the BNdT thin films with post-annealing temperature of $700^{\circ}C$ were 418 and 0.37, respectively.

• 한국세라믹학회지
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• 제47권4호
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• pp.329-332
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• 2010

In order to investigate the effect of tail state on the electrical and the optical properties in amorphous IGZO(a-IGZO), a-IGZO films were deposited at room temperature on fused silica substrats using pulsed laser deposition method. The laser pulse energy was used as the processing parameter. In-situ post annealing was carried out at $150^{\circ}C$ right after the film deposition. The $O_2$ partial pressure during the deposition and the post annealing was fixed to 10mTorr. The carrier mobility of the a-IGZO films had a range from 2 to $18\;cm^2/Vs$ at carrier concentrations greater than $10^{18}\;cm^{-3}$. As the laser energy density increased, the Hall mobility increased. And post annealing improved the Hall mobility, as well. The optical property was examined using the ultraviolet-visible spectroscopy. The a-IGZO films that have low Hall mobility exhibited stronger and broader absorption tails in >3.0 eV region. Post annealing reduced the intensity of the tail-like absorption. The absorption tail in a-IGZO films is an important factor which affects the electrical and the optical properties.