• Journal of Yeungnam Medical Science
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• 제20권2호
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• pp.117-128
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• 2003

Thallium-201 scintigraphy is used to discriminate the malignant bone tumor from the benign by qualitatively and quantitatively, and to predict the response of preoperative chemotherapy in osteosarcoma, by comparing the changes of thallium uptake ratio after chemotherapy to the tumor necrosis ratio. Thallium-201 scintigraphy scan should be done prior to surgical biopsy. PICKER Prism 2000 gamma camera with high resolution parallel hole collimator is usually used for scanning. The patient is injected with 2-3mCi of Tl-201 and the early phase is checked in 30 minutes and delayed phase in 3 hours. The scan images are visually evaluated by a blinded nuclear medicine physician. We could evaluate true positive, true negative, false positive and false negative by the comparison of results with those of biopsy, and calculate positive and negative predictive value(%), sensitivity(%), specificity(%) and diagnostic accuracy(%). For the quantitative analysis of thallium uptake, we drew the region of interest on the tumor side and contralateral normal side as mirror image, and calculated the uptake ratio with dividing the amount of gamma count in tumor side by normal side. We could calculate the percent changes of thallium uptake ratio in early and delayed phase, and compare them to the ratio of tumor necrosis. Thallium-201 scintigraphy proved as useful imaging study to discriminate malignant bone tumor from benign, but had exception in giant cell tumor and low grade malignant bone tumors. We can use T1-201 scan to differentiate the benign from the malignant tumor, and to evaluate the response of preoperative chemotherapy or radiotherapy, and to determine the residual tumor or local recurrence. For the better result, we need to have a more detail information about false positive cases and a more objective and quantitative reading technique.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권5호
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• pp.519-525
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• 2015

Positive bias stress-induced instability in amorphous indium-gallium-zinc-oxide (a-IGZO) bottom-gate thin-film transistors (TFTs) was investigated under high $V_{GS}$/low $V_{DS}$ and low $V_{GS}$/high $V_{DS}$ stress conditions through incorporating a forward/reverse $V_{GS}$ sweep and a low/high $V_{DS}$ read-out conditions. Our results showed that the electron trapping into the gate insulator dominantly occurs when high $V_{GS}$/low $V_{DS}$ stress is applied. On the other hand, when low $V_{GS}$/high $V_{DS}$ stress is applied, it was found that holes are uniformly trapped into the etch stopper and electrons are locally trapped into the gate insulator simultaneously. During a recovery after the high $V_{GS}$/low $V_{DS}$ stress, the trapped electrons were detrapped from the gate insulator. In the case of recovery after the low $V_{GS}$/high $V_{DS}$ stress, it was observed that the electrons in the gate insulator diffuse to a direction toward the source electrode and the holes were detrapped to out of the etch stopper. Also, we found that the potential profile in the a-IGZO bottom-gate TFT becomes complicatedly modulated during the positive $V_{GS}/V_{DS}$ stress and the recovery causing various threshold voltages and subthreshold swings under various read-out conditions, and this modulation needs to be fully considered in the design of oxide TFT-based active matrix organic light emitting diode display backplane.

• 대한전자공학회논문지
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• 제26권5호
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• pp.46-51
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• 1989

DC 스트레스에 의해 노쇠화된 짧은 채널 LDD NMOSFET에서 문턱전압과 subthreshold 전류곡선의 변화를 관측하여 hot-carrier 주입에 의한 노쇠화를 연구하였다. 포화영역에서 정의된 문턱전압의 변화 ${Delta}V_{tex}$를 trapped charge에 기인한 변화성분 ${Delta}V_{ot}$와 midgap에서 문턱전압 영역에 생성된 계면상태에 의한 변화성분${Delta}V_{it}$로 분리하였다. 게이트 전압이 드레인 전압보다 큰 positive oxid field ($V_g>V_d$) 조건에서는 전자들이 게이트 산화막으로 주입되어 문턱전압이 증가되었으나 subthreshold swing은 크게 변화하지 않고 subthreshold 전류곡선만 높은 게이트 전압으로 평행 이동하였다. 게이트 전압이 드레인 전압보다 낮은 negative oxide field ($V_g) 조건에서는 hole이 주입되고 포획된 결과를 보였으나 포획된 positive charge수 보다 더 많은 계면상태가 동시에 생성되어 문턱전압과 subth-reshold swing이 증가되었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 학술회의 논문집 정보 및 제어부문 B
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• pp.789-792
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• 2003

pMOSFET having 10 ${\mu}um$ thickness Gd layer has been tested to be used as a slow neutron sensor. The total thermal neutron cross section for the Gd is 47,000 barns and the cross section value drops rapidly with increasing neutron energy. When slow neutrons are incident to the Gd layer, the conversion electrons are emitted by the neutron absorption process. The conversion electrons generate electron-hole pairs in the $SiO_2$ layer of the pMOSFET. The holes are easily trapped in Oxide and act as positive charge centers in the $SiO_2$ layer. Due to the induced positive charges, the threshold turn-on voltage of the pMOSFET is changed. We have found that the voltage change is proportional to the accumulated slow neutron dose, therefore the pMOSFET having a Gd nuclear reaction layer can be used for a slow neutron dosimeter. The Gd-pMOSFET were tested at HANARO neutron beam port and $^{60}CO$ irradiation facility to investigate slow neutron response and gamma response respectively. Also the pMOSFET without Gd layer were tested at same conditions to compare the characteristics to the Gd-pMOSFET. From the result, we have concluded that the Gd-pMOSFET is very sensitive to the slow neutron and can be used as a slow neutron dosimeter. It can also be used in a mixed radiation field by subtracting the voltage change value of a pMOSFET without Gd from the value of the Gd-pMOSFET.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1301-1304
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• 2007

We have investigated degradation of short channel n-type poly-Si TFTs with LDD under high gate and drain voltage stress due to self-heating. We have found that the threshold voltage of short channel TFT is shifted to negative direction on the selfheating stress, whereas the threshold voltage of long channel is moved to positive direction.

• 대한전기학회논문지
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• 제41권2호
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• pp.185-191
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• 1992

In this paper, it is attempted to distinguish the charged particles and to judge the polarity by the use of Thermally Stimulated Current(TSC) and Temperature Gradient Thermally Stimulated Surface Potential Measurement(TG-TSSP)with experimental insulation material XLPE-EVA for power cables which is made by blending cross-linked polyethylene(XLPE) and ethylene-vinylacetate copolymer(EVA). In addition, it is performed to investigate the effect of EVA blending. From the experimental results, it is known that for the case of XLPE-EVA blended experimental material, the generation of space charged electric field is not obtained in the high temperature region due to the obatruction of the injection of trapping carrier by the electron and the positive hole.

• 천문학회보
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• 제39권2호
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• pp.59.1-59.1
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• 2014

AGN feedback has been believed as playing an important role in the galaxy-super massive black hole (SMBH) co-evolution. AGN gas outflow can lead to AGN feedback. We investigate gas outflow of low-redshift AGNs by using blue shift/asymmetric index (BAI), and velocity offset of CIV line. By comparing these gas outflow indicators (BAI and velocity offset) to AGN properties (i.e., SMBH mass, bolometric luminosity, and Eddington ratio) and BLR gas metallicity, we find positive correlations among outflow, Eddington ratio, and metallicity. These relations are consistent with those observed at high-redshift. We discuss the possibility of the connection between previous star formation with current AGN accretion and outflow.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.687-690
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• 2003

Experimental results are presented for gate oxide degradation and its effect on device parameters under negative and positive bias stress conditions using NMOSFET's with 3 nm gate oxide. The degradation mechanisms are highly dependent on stress conditions. For negative gate voltage, both hole- and electron-trapping are found to dominate the reliability of gate oxide. However, with changing gate voltage polarity, the degradation becomes dominated by electron trapping. Statistical parameter variations as well as the "OFF" leakage current depend on those charge trapping. Our results therefore show that Si or O bond breakage by electron can be another origin of the investigated gate oxide degradation.gradation.

• 한국자동차공학회논문집
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• 제9권2호
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• pp.75-83
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• 2001

This paper presents the evaluation of combustion characteristics of sing-hole plasma jet ignitions in comparison with conventional spark ignition for variable of swirl velocity. Plasma jet plugs are three types according to ejecting directions : center of chamber, positive and negative swirl flow direction. Experiments are carried out for equivalent ratio 1.0 of LPG-air mixture in a constant volume cylindrical vessel. Not only the flame propagation is photographed at intervals, but the pressure variation in the combustion chamber is also recorded throughout the entire combustion process. The results show that the plasma jet ignitions and spark ignition enhance the overall combustion rate by increasing the swirl velocity. The dependence of the combustion rate swirl velocity leade to the conclusion that the placma jet plug, which ejects plasma jet to the cwnter of combustion chamber is the most desirable ignitor than other plugs.

• 전기의세계
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• 제27권6호
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• pp.49-53
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• 1978

This paper investigates on the electric input characterisitcs of plasma electron beam in H$_{2}$ gas chamber with various pressures, effected by the shape and dimension of hollow screen cathode during electron beam is formed. The result are as follows: (1)Electron beam is formed in the region of positive resistance on the characteristic curve which shows the relation between the voltage and current of electron beam, independent of the shape and dimension of hollow screen cathode. (2)At a given electron beam current, electron beam voltage increases with the decreases of hollow screen cathode length and screen mesh number of it. (3)At a given electron beam current, electron beam voltage increases with the diameters of hollow screen cathode and electron beam hole of it.