• The Korean Journal of Ceramics
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• v.2 no.3
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• pp.137-141
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• 1996

Ambient air aged anodically etched porous silicon (PS) and spark-processed silicon (sp-Si) show interesting similarities and dissimilarities in some of their luminescence-related properties. Among these similarties are: (1) the photoluminescence (PL) peak maximum in the blue/violet (410 nm);(2) the blue/violet PL peak positions are essentially unchanged with temperature ; (3) PL decay times in the nanosecond region which are independent of the detection wavelength, which is much faster in decay times compared to that of observed decay time in $SiO_2$.Among the dissimilarities are: (1) the PL intensity of blue/violet luminescence, namely, the PL intensity of sp-Si is at least 2 orders of magnitude larger than that of an ambient air aged PS; (2) the blue/violet PL intensity of sp-Si is more stable than that of ambient air aged PS under UV illuminations; (3) FTIR spectra of sp-Si favor those modes, which involve silicon -oxygen bonds in $SiO_2$ stoichiometry, whereas ambient air aged PS can be considered as a nonstoichiometric oxide judging from the observed vibrational spectra.

• The Journal of Natural Sciences
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• v.11 no.1
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• pp.27-31
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• 1999

The Raman scattering was studied from the porous silicons which were made by changing anodization current and time. As the current density was increased, it was observed that Raman peak was red shift and the full width half maximum increased, and was analyzed theoretically.

• Journal of Sensor Science and Technology
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• v.26 no.3
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• pp.186-191
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• 2017

In this study, we investigated the simultaneous detection properties of organic vapor, pressure difference, and magnetic field using a single rugate-structured free-standing porous silicon (RFPS) thin film. Both the wavelength and the intensity of the rugate peaks were changed in the reflectivity spectrum measured at the thin film surface while the organic vapor was exposed to the RFPS thin film. However, when the pressure difference and the magnetic field were exposed to the film, only the rugate peak intensity was changed. Therefore, it is possible to distinguish whether or not the organic vapor is detected by simultaneously changing the rugate peak wavelength and intensity. In addition, a method of distinguishing between the pressure difference and the magnetic field detection signal has been derived by rapidly modulating the direction of the magnetic field. This study shows that it is possible to simultaneously detect and distinguish various objects using a single RFPS thin film, and it is found that porous silicon can be utilized as a sensor sufficiently.

• Journal of the Korean Ceramic Society
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• v.45 no.5
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• pp.285-289
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• 2008

Porous self-bonded silicon carbide (SiC) ceramics were fabricated at temperatures ranging from 1750 to $1850^{\circ}C$ using SiC, silicon (Si), and carbon (C) powders as starting materials. The effect of the Si:C ratio on porosity and strength was investigated as a function of sintering temperature. It was possible to produce self-bonded SiC ceramics with porosities ranging from 36% to 43%. The porous ceramics showed a maximal porosity when the Si:C ratio was 2:1 regardless of the sintering temperature. In contrast, the maximum strength was obtained when the ratio was 5:1.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.592-597
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• 2004

Porous silicon(PS) has received much attention as a sensitive material of chemical sensors because of its large internal surface area. In this work, we fabricated gas-sensing devices based on the porous silicon layer which could be applicable to the measurement of blood alcohol content(BAC), and estimated their electrical properties. The structure of the sensor is similar to an MIS (metal-insulator-semiconductor) diode and consists of thin Au/oxidized PS/PS/p-Si/Al, where the p-Si substrate is etched anisotropically to reduce the thickness. We measured C-V curves from two types of the samples with the PS layer treated by the different anodization current density of 60 or 100 mA/cm$^2$, in order to compare the sensitivity. As a result, the magnitude and variation of capacitances from the devices with the PS formed under the current density of 100 mA/cm$^2$ were found to be more detectable due to the larger internal surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1218-1223
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• 2004

Porous silicon materials have been shown to have bright prospects for applications in light emitting, solar cell, as well as light- and chemical-sensing devices. In this report, structures of porous silicon prepared by anodic etching in HF-based solution with various etching times were studied in detail by Atomic Force Microscopy and Small Angle X -ray Scattering technique using the high energy beam line at Pohang Light Source in Korea. The results showed the coexistence of the various pores with nanometer and submicrometer scales. For nanameter size pores, the mixed ones with two different shapes were identified: the larger ones in cylindrical shape and the smaller ones in spherical shape. Volume fractions of the cylindrical and the spherical pores were about equal and remained unchanged at all etching times investigated. On the whole uniform values of the specific surface area and of the size parameters of the pores were observed except for the larger specific surface area for the sample with the short etching time. The results implies that etching process causes the inner surfaces to become smoother while new pores are being generated. In all SAXS data at large Q vectors, Porod slope of -4 was observed, which supports the fact that the pores have smooth surfaces.

• Journal of Sensor Science and Technology
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• v.8 no.1
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• pp.32-37
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• 1999

A capacitance-type humidity sensor with mesa structure in which porous silicon layer is used as humidity-sensing material is developed and its humidity sensing properties are measured. This sensor has a structure where two electrodes are set on the up-side of the wafer against the past typical structure having these electrodes on the up and down-side of the wafer. Therefore, the sensor can be fabricated monolithically to be more compatible with the IC process technology, and is possible to detect more correct output capacitance by removing the effect of the parasitic capacitance from the bottom layer and other junctions. To do this, the sensor was fabricated using process such as localized formation of porous silicon, oxidation of porous silicon layer, and etching of oxidized porous silicon layer. From the completed samples, the dependence of capacitance on the relative humidity of 55 to 90% more was measured at room temperature. As the result, the measured capacitance increased monotonously higher at the low frequency of 120 Hz, where the capacitance was observed to increase over 300%.

• Journal of Sensor Science and Technology
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• v.24 no.6
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• pp.385-391
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• 2015

In this paper, we propose a new method to infiltrate $Fe_3O_4$-nanoparticles into a porous silicon film and a monitoring technique to detect packing density of nanoparticles within the film. Recently, research to use porous silicon as a drug carrier or a new functional sensor material by infiltrating $Fe_3O_4$-nanoparticles has been extensively performed. However, it is still necessary to enhance the packing density and to develop a monitoring technique to detect the packing density in real time. In this light, we forcibly injected a nanoparticle solution into a rugate-structured free-standing porous silicon (FPS) film by applying a pressure difference between the two sides of the film. We found that the packing density by the pressure-infiltration method proposed in this paper is enhanced, relative to that by the previous diffusion method. Moreover, a continuous shift in wavelength of the rugate reflectance peak measured from the film surface was observed while the nanoparticle solution was being injected. By exploiting this phenomenon, we could qualitatively monitor the packing density of $Fe_3O_4$-nanoparticles within the FPS film with the injection volume of the nanoparticle solution.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.4
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• pp.149-154
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• 2004

This paper presents a silicon probe tip for vertical probe card application. The silicon probe tip was fabricated using MEMS technology such as porous silicon micromachining and deep- RIE (reactive ion etching). The thickness of the silicon epitaxial layers was 5 ${\mu}{\textrm}{m}$ and 7 ${\mu}{\textrm}{m}$, respectively. The width and length were 40 ${\mu}{\textrm}{m}$ and 600 ${\mu}{\textrm}{m}$, respectively. The probe structure was a multilayered structure and was composed of Au/Ni-Cr/Si$_3$N$_4$/n-epi layers. The height of the curled probe tip was measured as a function of the annealing temperature and time. Resistance characteristics of the probe tip were measured using a touchdown test.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.46-50
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• 2008

Optical images on the porous silicon exhibiting Febry-Perot fringe pattern have been prepared by using an electrochemical etching of p-type silicon wafer (boron-doped,<100> orientation, resistivity $0.8{\sim}1.2m{\Omega}-cm$) and beam projector. The images remained in the substrate displayed an optical images correlating to the optical pattern and could be useful for optical data storage. A decrease in the effective optical thickness of the Febry-Perot layers was observed, indicative of a change in refractive index induced by exposing of porous silicon to the white light. This provides the ability to fabricate complex optical encoding in the surface of silicon.