• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1258-1261
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• 2004

Degradation phenomenon in the low-temperature polysilicon (LTPS) thin-film transistors (TFTs) with different junction structures was investigated. A gate-overlapped lightly doped drain (GOLDD) structure showed better hot-carrier stress (HCS) stability than a conventional LDD one. On the other hand, high drain current stress (HDCS) at $V_{gs}$ = $V_{ds}$ conditions caused much severe device degradation in the GOLDD structure because of its higher current level resulting in the higher applied power. It is suggested that self-heating-induced mobility degradation in the GOLDD TFFs be suppressed for using this structure in short-channel devices.

• Analytical Science and Technology
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• v.25 no.6
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• pp.345-349
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• 2012

Polysilane black powders were synthesized by sonochemical methods from silicon tetrachloride with sodium metal with 37.0% yield. Those black powder materials were found to have fibrous or irregular shapes with round surface. It was found that thermal behaviors of those polysilane black powders were similar to that of hydropolysilanes which was reported earlier. After thermal treatment, black polysilicon was obtained with 57.1% residue yield, and those fibrous or irregular shapes with round surface were intact but lots of small cavities were formed indicating porous structure, and found to be an amorphous state from XRD analysis.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1075-1078
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• 2007

Negative Bias Temperature Instability (NBTI) in Eximer Laser Annealing (ELA) based Low Temperature polysilicon (LTPS) Thin-Film Transistors (TFT) was investigated. Even though NBTI is generally appeared in devices with thin gate oxide, the TFT with gate oxide thickness of 120 nm, relatively thick, also showed NBTI effect and dynamic NBTI effect is dependent on operational frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.64-66
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• 1993

The charateristics of low temperature poly-Si thin films with different growth condition were investigated and poly-Si TFTs were fabricated on solid phase crystallized (SPC) amorphous silicon films and as-deposited poly-Si films. The performance of devices fabricated on the SPC amorphous silicon films was shown to be superior to that of devices fabricated on as-deposited poly-Si films. It was found that the characteristics of low-temperature poly-Si thin films such as surface roughness, crystal texture and grain size strongly influenced the poly-Si TFT performance.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.12
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• pp.77-82
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• 1996

The breakdown characteristics of metal-oxide-semiconductor(MOS) capacitors fabricated by Al, polysilicon, and tungsten polycide gate electrodes onto gate oxide was evaluated by time zero dielectric breakdwon (TZDB). The average breakdown field of the gate oxide with tungsten polycide electride was lower than that of the polysilicon electrode. The B model (1~8MV/cm) failure of the gate oxide with tungsten polycide electrode was increased with increasing annealing temperature in the dry $O_{2}$ ambient. This is attributed ot fluorine and tungsten diffusion from thungsten silicide film into the gate oxide, and stress increase of tungsten polcide after annealing treatment.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2011.11a
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• pp.47-48
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• 2011

According to Bali Roadmap, Korea is also included in nations with a duty to reduce greenhouse gas. This study aims to draw proper Si/Al ratio by analyzing flowing and strength properties as the 4-component low carbon inorganic composite to reduce the use of cement and discarded polysilicon sludge. As the result, when Si/Al ratio is 4, the highest strength was found.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.969-975
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• 2002

Thin film transistors(TFT) were made based on the polycrystalline Si (poly-Si) crystallized by sequential lateral solidification(SLS) method. The electrical characteristics of the devices were analyzed. n-type TFTs did not show a superior characteristics compared to p-type TFTs. We analyzed the causes of the failure by focused ion beam(FIB) analysis and automatic spreading resistance(ASR) measurement, to study the structural integrity and the doping distribution, respectively. FIB showed no structural problems but it revealed a non-intermixed layer in the contact holes between the polysilicon and the aluminum electrode. ASR analyses on poly-Si layer with various doping concentrations and activation temperatures showed that the inadequately doped areas were partially responsible for the inferior behavior of the whole device.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.6
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• pp.969-974
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• 1987

High value sheet resistance (Rs, 350 \ulcorner/ -80 K \ulcorner/ ) borom implanted polysilicon resistors were fabricated under process condition compatible with bipolar integrated circuits fabrication. This paper includes the effect of contact ion implantation on Rs and the effect of electron gun(e-gun) deosition vs. non e-gun evaporated metal contacts on the Rs. From results, we observed that the contact ion implanted samples showed higher Rs value than those without contact ion implantation. Also, it was shown that there is noticeable amount of Rs degradation for e-gun samples, while sputtered samples expressed little Rs degradation after PtSi was formed.

• ETRI Journal
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• v.20 no.2
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• pp.241-249
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• 1998

The structure and electrical characteristics of metal-ferroelectric-semiconductor FET(MFSFET) for a single transistor memory are presented. The MFSFET was comprised of polysilicon islands as source/drain electrodes and $BaMgF_4$ film as a gate dielectric. The polysilicon source and drain were built-up prior to the formation of the ferroelectric film to suppress a degradation of the film due to high thermal cycles. From the MFS capacitor, the remnant polarization and coercive field were measured to be about $0.6{\mu}C/cm^2$ and 100 kV/cm, respectively. The fabricated MFSFETs also showed good hysteretic I-V curves, while the current levels disperse probably due to film cracking or bad adhesion between the film and the Al electrode.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2017.05a
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• pp.173-174
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• 2017

Recently, many experiments using industrial by-products have been going on in Korea and abroad. Most of the studies on blast furnace slag and fly ash have been conducted, and the blast furnace slag based two and three component experiments have been conducted in many places. Therefore, this study is an additional study of research using polysilicon sludge and paper ash, which is a study using existing industrial by-products based on blast furnace slag, as strength properties of alkali activator according to kind and mixing ratio and to obtain basic data do.