한국정보디스플레이학회:학술대회논문집
- 2007.08b
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- Pages.1075-1078
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- 2007
A Study on Negative Bias Temperature Instability in ELA Based Low-Temperature polycrystalline Silicon Thin-Film Transistors
- Im, Kiju (Corporate R&D Center, Samsung SDI Co., LTD) ;
- Choi, Byoung-Deog (Corporate R&D Center, Samsung SDI Co., LTD) ;
- Hyang, Park-Hye (Corporate R&D Center, Samsung SDI Co., LTD) ;
- Lee, Yun-Gyu (Corporate R&D Center, Samsung SDI Co., LTD) ;
- Yang, Hui-won (Corporate R&D Center, Samsung SDI Co., LTD) ;
- Kim, Hye-Dong (Corporate R&D Center, Samsung SDI Co., LTD)
- Published : 2007.08.27
Abstract
Negative Bias Temperature Instability (NBTI) in Eximer Laser Annealing (ELA) based Low Temperature polysilicon (LTPS) Thin-Film Transistors (TFT) was investigated. Even though NBTI is generally appeared in devices with thin gate oxide, the TFT with gate oxide thickness of 120 nm, relatively thick, also showed NBTI effect and dynamic NBTI effect is dependent on operational frequency.