• 제목/요약/키워드: polycrystalline 3C-SiC

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다결정 3C-SiC 마이크로 공진기 제작과 그 특성 (Fabrication and characterization of polycrystalline 3C-SiC mocro-resonators)

  • 이태원;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.250-250
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    • 2008
  • This paper describes the resonant characteristics of polycrystalline SiC micro resonators. The $1{\mu}m$ thick polycrystalline 3C-SiC cantilevers with different lengths were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonance was measured by a laser vibrometer in vacuum at room temperature. For the 100 ~ $40{\mu}m$ long cantilevers, the fundamental frequency appeared at 147.2 kHz - 856.3 kHz. The $100{\mu}m$ and $80{\mu}m$ long cantilevers have second mode resonant frequency at 857.5 kHz and 1.14 MHz. Therefore, polycrystalline 3C-SiC micro resonators are suitable for RF MEMS devices and bio/chemical sensor applications.

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양단이 고정된 빔형 다결정 3C-SiC 마이크로 공진기의 제작과 그 특성 (Fabrication of Polycrystalline SiC Doubly Clamped Beam Micro Resonators and Their Characteristics)

  • 정귀상;이태원
    • 한국전기전자재료학회논문지
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    • 제22권4호
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    • pp.303-306
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    • 2009
  • This paper describes the characteristics of polycrystalline 3C-SiC doubly clamped beam micro resonators. The polycrystalline 3C-SiC doubly clamped beam resonators with $60{\sim}100{\mu}m$ lengths, $10{\mu}m$ width, and $0.4{\mu}m$ thickness were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonant frequency was measured by a laser vibrometer in vacuum at room temperature. For the $60{\sim}100{\mu}m$ long cantilevers, the fundamental frequency appeared at $373.4{\sim}908.1\;kHz$. The resonant frequencies of doubly clamped beam with lengths were higher than simulated results because of tensile stress. Therefore, polycrystalline 3C-SiC doubly clamped beam micro resonators are suitable for RF MEMS devices and bio/chemical sensor applications.

다결정 SiC 마이크로 공진기의 제작과 그 특성 (Fabrication and characteristics of polycrystalline SiC micro resonators)

  • 정귀상;이태원
    • 센서학회지
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    • 제17권6호
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    • pp.425-428
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    • 2008
  • This paper describes the resonant characteristics of polycrystalline SiC micro resonators. The $1{\mu}m$ thick polycrystalline 3C-SiC cantilevers with different lengths were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonance was measured by a laser vibrometer in vacuum at room temperature. For the $100{\sim}40{\mu}m$ long cantilevers, the fundamental frequency appeared at $147.2kHz{\sim}856.3kHz$. The $100{\mu}m$ and $80{\mu}m$ long cantilevers have second mode resonant frequency at 857.5.kHz and 1.14.MHz, respectively. Therefore, polycrystalline 3C-SiC resonators are suitable for RF MEMS devices and bio/chemical sensor applications.

양단이 고정된 빔형 다결정 3C-SiC 마이크로 공진기의 특성 (Characteristics of poly 3C-SiC doubkly clamped beam micro resonators)

  • 류경일;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.217-217
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    • 2009
  • This paper describes the characteristics of polycrystalline 3C-SiC doubly clamped beam micro resonators. The polycrystalline 3C-SiC doubly clamped beam resonators with 60 ~ 100 ${\mu}m$ lengths, $10\;{\mu}m$ width, and $0.4\;{\mu}m$ thickness were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonant frequency was measured by a laser vibrometer in vacuum at room temperature. For the 60 ~ 100 ${\mu}m$ long cantilevers, the fundamental frequency appeared at 373.4 ~ 908.1 kHz. The resonant frequencies of doubly clamped beam with lengths were higher than simulated results because of tensile stress. Therefore, polycrystalline 3C-SiC doubly clamped beam micro resonators are suitable for RF MEMS devices and bio/chemical sensor applications.

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극한 환경 MEMS용 다결정 3C-SiC 박막의 성장 (Growing of polycrystalline 3C-SiC thin films for harsh environment MEMS applications.)

  • 김강산;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.408-409
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    • 2006
  • The polycrystalline 3C-SiC thin films heteroepitaxially grown by LPCVD method using single precursor 1. 3-disilabutane at $850^{\circ}C$. The crystallinity of the 3C-SiC thin film. was analyzed by XPS. Residual strain was investigated by Raman scattering. The surface morphology and voids between SiC and $SiO_2$ were measured by SEM. The grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS applications.

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다결정 3C-SiC 마이크로 공진기의 온도특성 (Temperature Characteristics of Polycrystalline 3C-SiC Micro Resonators)

  • 정귀상;이태원
    • 한국전기전자재료학회논문지
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    • 제22권4호
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    • pp.314-317
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    • 2009
  • This paper describes the temperature characteristics of polycrystalline 3C-SiC micro resonators. The $1.2{\mu}m$ and $0.4{\mu}m$ thick polycrystalline 3C-SiC cantilever and doubly clamped beam resonators with $60{\sim}100{\mu}m$ lengths were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonance was measured by a laser vibrometer in vacuum at temperature range of $25{\sim}200^{\circ}C$. The TCF(Temperature Coefficient of Frequency) of 60, 80 and 100 On long cantilever resonators were -9.79, -7.72 and -8.0 ppm/$^{\circ}C$. On the other hand, TCF of 60, 80 and $100{\mu}m$ long doubly clamped beam resonators were -15.74, -12.55 and -8.35 ppm/$^{\circ}C$. Therefore, polycrystalline 3C-SiC resonators are suitable with RF MEMS devices and bio/chemical sensor applications in harsh environments.

고온 가스센서용 Pd-다결정 3C-SiC 쇼트키 다이오드의 특성 (Characteristics of Pd/polycrystalline 3C-SiC Schottky diodes for high temperature gas sensors)

  • 안정학;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.275-275
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    • 2008
  • This paper describe the fabrication of a Pd/polycrystalline 3C-SiC schottky diode and its characteristics, in which the polycrystalline 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC Schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2\times10^{-3}$ A/$cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

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LPCVD로 성장된 다결정 3C-SiC 박막의 물리적 특성 (Physical Characteristics of Polycrystalline 3C-SiC Thin Films Grown by LPCVD)

  • 정귀상;김강산
    • 한국전기전자재료학회논문지
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    • 제19권8호
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    • pp.732-736
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    • 2006
  • This paper describes the physical characterizations of polycrystalline 3C-SiC thin films heteroepitaxially grown on Si wafers with thermal oxide, In this work, the 3C-SiC film was deposited by LPCVD (low pressure chemical vapor deposition) method using single precursor 1, 3-disilabutane $(DSB:\;H_3Si-CH_2-SiH_2-CH_3)\;at\;850^{\circ}C$. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_2$ were measured by SEM (scanning electron microscope). Finally, residual strain was investigated by Raman scattering and a peak of the energy level was less than other type SiC films, From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS (Micro-Electro-Mechanical-Systems) applications.

가스흐름 제어에 의한 균일한 다결정 3C-SiC 박막 성장 (The uniform polycrystalline 3C-SiC thin film growth by the gas flow control)

  • 윤규형;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.92-92
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    • 2008
  • The surface flatness of heteroepitaxially grown 3C-SiC thin films is a key factor affecting electronic and mechanical device applications. This paper describes the surface flatness of polycrystalline 3C-SiC thin films by the gas flow control according to the location change of geometric structure. The polycrystalline 3C-SiC thin film was deposited by APCVD(Atmospheric pressure chemical vapor deposition) at $1200^{\circ}C$ using HMDS(Hexamethyildisilane : $Si_2(CH_3)_6)$ as single precursor, and 5 slm Ar as the main flow gas. According to the location of geometric structure, surface fringes and flatness changed. It shows the distribution of thickness is formed uniformly in the specific location of the geometric structure.

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In-situ 도핑된 다결정 3C-SiC 박막의 전기적 특성 (Electrical characteristics of In-situ doped polycrystalline 3C-SiC thin films)

  • 김강산;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.137-137
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    • 2008
  • In-situ doped polycrystalline 3C-SiC thin films were deposited by APCVD at $1200^{\circ}C$ using HMDS(hexamethyildisilane: $Si_2(CH_3)_6)$) as Si and C precursor, and 0 ~ 100 sccm $N_2$ as the dopant source gas. The peak of SiC is appeared in polycrystalline 3C-SiC thin films grown on $SiO_2$/Si substrates in XRD(X-ray diffraction) and FT-IR(Fourier transform infrared spectroscopy) analyses. The resistivity of polycrystalline 3C-SiC thin films decreased from 8.35 $\Omega{\cdot}cm$ with $N_2$ of 0 sccm to 0.014 $\Omega{\cdot}cm$ with 100 sccm. The carrier concentration of poly 3C-SiC films increased with doping from $3.0819\times10^{17}$ to $2.2994\times10^{19}cm^{-3}$ and their electronic mobilities increased from 2.433 to 29.299 $cm^2/V{\cdot}S$, respectively.

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