• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.151-152
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• 2000

For excimer laser crystallization (ELC), energy density, number of pulses, beam uniformity, and condition of initial amorphous Si (a-Si) films are significant factors contributing the final microstructure and the performance of low-temperature polycrystalline Si TFTs. The process and equipment have been achieved a significant improvement, but still, environmental factors associated with initial amorphous Si (a-Si) films and process conditions need to be optimized.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.135-136
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• 2000

Field emission mechanism of undoped polycrystalline diamond films with a different amount of nondiamond carbon has been investigated using a transparent anode imaging technique and an electrolytic decoration technique. It is confirmed that for the films with a large amount of nondiamond carbon, electron transport occurs mainly through conductive grain boundaries while for the films with a small amount of nondiamond carbon, electron transports preferentially through diamond surface.

• Solar Energy
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• v.5 no.2
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• pp.54-59
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• 1985

Due to the grainboundary recombination and the poor diffusion length, the polycrystalline cell efficiency is lower than the singlecrystalline cell. In order to define the effect of grains and grain-boundaries, 2 - dimensional differential diffusion equations of minority carrier are modelled. To solve them, two theoretical formulas are derived, which can be evaluated the grainboundary recombination velocity and the grain diffusion length. Also computer-aided numerical analysis is given.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.749-751
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• 2007

A buffer layer consisting of $SiO_x/Ta/Ti$ has been developed in order to overcome the adhesion and stress problems between poly-Si film and mica. Polycrystalline silicon thin film transistor was successfully fabricated on the mica and transferred to a flexible plastic substrate.

• Journal of the Korean Ceramic Society
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• v.20 no.1
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• pp.31-36
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• 1983

The photoelectrochemical conversion by polycrystalline $TiO_2$ electrodes is effected by applied voltage oxidized $TiO_2$ thickness temperature and concentration of a, P. E. C cell. Anodic current starts at -0.8V in 1N-NaOH solu-tion and photocurrent appears around 420nm frequency. And the emf of the cell drops with the rate of 58.5mV/PH.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.593-600
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• 2000

This paper investigated the conduction path and conduction mechanism in undoped polycrystalline diamond thin films deposited by microwave chemical vapor deposition. The resistances measured by ac impedance spectroscopy with different directions can not be explained by the previously-known surface conduction model. The electrodeposition of Cu and electroetching of Ag experiments showed that the conduction path is the grain boundaries within the diamond films. The electodeposition of Cu with an insulating surface layer further proved that the main conduction path in polycrystalline films in the grain boundaries. The film with high electrical conductivity has low activation energy of 45meV and higher dangling bond density. By considering the results and surface C chemical bonds, the H-C-C-H bonds at surface and in grain boundaries might be the origin of high conductivity in undoped diamond films.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.24 no.2
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• pp.185-191
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• 2011

Plastic gradient from geometrically necessary dislocation(GND) can affect material behavior significantly. In this research, mechanical behavior of polycrystalline solid is investigated using the finite element method incorporating plastic gradient from long range dislocation or GND effect. Plastic gradient effect is implemented in the analysis model by considering a long range strain term as well as elastic and plastic terms in the multiplicative decomposition. In the model, gradient hardness coefficient and length parameter are used to evaluate the effect of the long range strains and sensitive study is conducted for the parameters. It is confirmed that the GND amplifies hardening response of polycrystals compared with the single crystal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.330-330
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• 2007

Polycrystalline mercuric iodide $HgI_2$) films are being developed as a new detector technology for digital x-ray imaging. The $HgI_2$ is generally vacuum deposited by physical vapor deposition (PVD) process. But the PVD thick deposition has been caused any instability in the biasing due to any defects or cracks. In this work we present a new particle-in-binder (PIB) methodologies used for the $HgI_2$ thick films. These growth techniques can be easily extended to produce much larger film areas. This paper, for the first time, presents results and comparison of polycrystalline $HgI_2$ films derived by various PIB methods. We investigated the structural and morphological properties of the films using X-ray diffraction (XRD) and scanning electron microscopy (SEM) analysis. The films were characterized with respect to their electrical properties and in response to x-ray photons. Physical and electrical results were also compared between conventional polycrystalline PVD and our detectors. Leakage current as low as $350\;pA/cm^2$ at the bias voltage of ~ 200 V has been observed. And high sensitivity and good linearity in the response to x-rays was obtained in the film derived by PIB sedimentation method. Our future efforts will concentrate on optimization of film growth techniques for uniform large area deposition on image readout arrays.

• Journal of Convergence for Information Technology
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• v.9 no.3
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• pp.75-81
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• 2019

In this work, we investigated a low temperature polycrystalline silicon (LTPS) thin film transistors fabrication process on polymer layers. Dehydrogenation and activation processes were performed by a furnace annealing at a temperature of $430^{\circ}C$ for 2 hr. The crystallization of amorphous silicon films was formed by excimer laser annealing (ELA) method. The p-type device performance, fabricated by polycrystalline silicon (poly-Si) films, shows a very good performance with field effect mobility of $77cm^2/V{\cdot}s$ and on/off ratio current ratio > $10^7$. We believe that the poly-Si formed by a LTPS process may be well suited for fabrication of poly-Si TFTs for bendable panel displays such as AMOLED that require circuit integration.

• Journal of Magnetics
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• v.7 no.3
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• pp.80-93
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• 2002

The role of magnetic anisotropy of the antiferromagnetic layer on the magnetization process of exchange coupled polycrystalline ferromagnetidantiferromagnetic bilayers is discussed. In order to elucidate the magnetic torque response of Ni-Fe/Mn-Ir bilayers, the single spin ensemble model is newly introduced, taking into account the two-dimensionally random distribution of the magnetic anisotropy axes of the antiferromagnetic grains. The mechanism of the reversible inducement of the exchange anisotropy along desirable directions by field cooling procedure is successfully explained with the new model. Unidirectional anisotropy constant, J$k$, of polycrystalline Ni-Fe/Mn-Ir and Co-Fe/Mn-Ir bilayers is investigated as functions of the chemical composition of both the ferromagnetic layer and the antiferromagnetic layer. The effects of microstructure and surface modification of the antiferromagnetic layer on JK are also discussed. As a notable result, an extra large value of J$k$, which exceeds 0.5 erg/cm$^2$, is obtained for $Co_{70}Fe_{30}Mn_{75}Ir_{25}$ bilayer with the ultra-thin (50${\AA}$∼100${\AA}$) Mn-Ir layer. The exchange anisotropy of $Co_{70}Fe_{30}$ 40 ${\AA}/Mn_{75}Ir_{25}$ 100 ${\AA}$ bilayer is stable for thermal annealing up to $400{^{\circ}C}$, which is sufficiently high for the application of spin valve magnetoresistive devices.