• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.3
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• pp.210-217
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• 2004

This paper presents a simulation methodology for the poly-silicon oriented TCAD(technology-CAD) system. A computer simulation environment for the poly-silicon processing has been set up with the proper adoption of the two-stream model for ion-doping, diffusion, and defects inside of grain and on the grain boundary. After the simulator calibration, simulation results for the poly-silicon diffusion has showed a good agreement with the SIMS data.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.249-250
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• 2008

In this paper, we propose the single polycrystalline silicon flash EEPROM IC with a new structure which does not need the high voltage switching circuit. The design of high voltage switching circuits which are needed for the data program and erase, has been an obstacle to develop the single-poly EEPROM. Therefore, we has proposed the new cell structure which uses the low voltage switching circuits and has designed the full chip. A new single-poly EEPROM cell is designed and the full chip including the control block, the analog block, row decoder block, and the datapath block is designed. And the each block is verified by using the computer simulation. In addition, the full chip layout is performed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.60-61
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• 2007

In this paper, the p-channel poly Si thin-film transistors (Poly-Si TFT's) using formed by solid phase crystallization (SPC) on glass substrate were fabricated. And we propose an ONO(Oxide-Nitride-Oxide) multilayer as the gate insulator for poly-Si TFT's to indicate non-volatile memory (NVM) effect. Poly-Si TFT is investigated by measuring the electrical properties of poly-Si films, such as I-V characteristics, on/off current ratio. NVM characteristics is showed by measuring the threshold voltage change of TFT through I-V characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.320-323
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• 2000

In the resent years, the Thin Film Transistor Liquid Crystal Display(TFT-LCD) have trend toward larger panel sizes and higher spatial and/or gray-scale resolution. In this trend, Because of its low field effect mobility, a-Si TFT is change to poly-Si TFT. In this paper, both effective-medium model of poly-Si TFTs and empirical capacitance model are applied to Pixel Design Array Simulation Tool (PDAST) and the pixel characteristics of TFT-LCD array were simulated, which were compared with the results calculated by Aim-Spice.

• Journal of applied mathematics & informatics
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• v.41 no.4
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• pp.753-763
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• 2023

In this paper, we introduce a fully modified (p, q)-poly tangent polynomials and numbers of the first type. We investigate analytic properties that is related with (p, q)-Gaussian binomial coefficients. We also define (p, q)-Stirling numbers of the second kind and fully modified (p, q)-poly tangent polynomials and numbers of the first type with two variables. Moreover, we derive some identities are concerned with the modified tangent polynomials and the (p, q)-Stirling numbers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.87-88
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• 2006

Recently, poly-Si TFT-LCD starts to be mass produced using excimer laser annealing (ELA) poly-Si. The main reason for this is the good quality poly-Si and large area uniformity. We report the influence of channel length and width on poly-Si TFTs performance. Transfer characteristics of p-channel poly-Si thin film transistors fabricated on polycrystalline silicon (poly-Si) thin film transistors (TFTs) with various channel lengths and widths of 2-30 ${\mu}m$ has been investigated. In this paper, we analyzed the data of p-type TFTs. We studied threshold voltage ($V_{TH}$), on/off current ratio ($I_{ON}/I_{OFF}$), saturation current ($I_{DSAT}$), and transconductance ($g_m$) of p-channel poly-Si thin film transistors with various channel lengths and widths.

• Journal of Adhesion and Interface
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• v.11 no.3
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• pp.89-99
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• 2010

In this paper, for polymerization of poly(vinyl acetate-co-ethylene) (VAE) by redox system using poly(vinyl alcohol) (PVOH) as emulsifier on the properties of the final emulsion, and pH changes affect the physical properties of the final emulsion was investigated. The results of the molecular weight of PVOH had a dramatic impact on the emulsion properties. The used a low molecular weight of PVOH products was obtained low viscosity and using the high molecular weight of PVOH were obtained high viscosity product. However, changing the pH of the final polymerized product properties for the PVOH obtained different results. Generally, a poly(vinyl acetate) emulsion by a high degree of polymerization and high molecular weight of PVOH was obtained high viscosity of the final emulsion. But, in VAE was lower emulsion viscosity in high pH. This is the molecular weight of the emulsion during the synthesis of PVOH is considered to be affected by degradation. The final viscosity was decreased by grafting ratio and molecular weight were decreased with increasing of pH.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.69-74
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• 2004

System-on-glass technology made with low temperature poly-Si TFT has been rapidly advancing in recent years. We have developed a low-power, narrow edged frame, 1.9inch system-on-glass LCD which fully integrates a 16-bit RGB interface driver and all power circuits required for driving the LCD. In this paper, the latest poly-Si TFT circuit technologies used in the newly developed LCD are discussed. The development trends are also reviewed.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.897-897
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• 2005

We report QLA (Quenching-rate controlled Laser Annealing) system as new concept using pulsed DPSSL and CW lasers. This process can control temperature quenching-rate of poly-Si crystallization by additional CW laser and fabricate high quality poly-Si with faster scanning speed than conventional processes. In this paper, QLA system, the experimental results and theoretical discussion will be introduced.

• Journal of applied mathematics & informatics
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• v.38 no.5_6
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• pp.601-609
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• 2020

In this paper, we introduce degenerate generalized poly-Bernoulli numbers and polynomials with (p, q)-logarithm function. We find some identities that are concerned with the Stirling numbers of second kind and derive symmetric identities by using generalized falling factorial sum.