Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.06a
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- Pages.249-250
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- 2008
1Kbit single-poly EEPROM IC design
1Kbit single-poly EEPROM IC 설계
- Jung, In-Seok (Chungbuk National Univ.) ;
-
Park, Keun-Hyung
(Chungbuk National Univ.)
;
- Kim, Kuk-Hwan (MagnaChip)
- Published : 2008.06.19
Abstract
In this paper, we propose the single polycrystalline silicon flash EEPROM IC with a new structure which does not need the high voltage switching circuit. The design of high voltage switching circuits which are needed for the data program and erase, has been an obstacle to develop the single-poly EEPROM. Therefore, we has proposed the new cell structure which uses the low voltage switching circuits and has designed the full chip. A new single-poly EEPROM cell is designed and the full chip including the control block, the analog block, row decoder block, and the datapath block is designed. And the each block is verified by using the computer simulation. In addition, the full chip layout is performed.