• Journal of the Korean Ceramic Society
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• v.41 no.9
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• pp.637-641
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• 2004

We investigated the effects of SiH$_4$ gas on the surface of Hf-silicate films during the deposition of polycrystalline (poly) Si films and the thermal stability of sputtered Hf-silicate films in poly Si/Hf-silicate structure by using High Resolution Transmission Electron Microscopy (HR-TEM) and X-ray Photoelectron Spectroscopy (XPS). Hf-silicate films were deposited by using DC-mag-netron sputtering with Hf target and Si target and poly Si films were deposited at 600$^{\circ}C$ by using Low Pressure Chemical Vapor Deposition (LPCVD) with SiH$_4$ gas. After poly Si film deposition at 600$^{\circ}C$, Hf silicide layer was observed between poly Si and Hf-silicate films due to the reaction between active SiH$_4$ gas and Hf-silicate films. After annealing at 900$^{\circ}C$, Hf silicide, formed during the deposition of poly Si, changed to Hf-silicate and the phase separation of the silicate was not observed. In addition, the Hf-silicate films remain amorphous phase.

• Bulletin of the Korean Chemical Society
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• v.32 no.4
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• pp.1303-1309
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• 2011

Melt copolymerization reactions of bis(diethylamino)tetramethyldisiloxane with several aryldiols were carried out to afford poly(carbotetramethyldisiloxane)s containing fluorescent aromatic chromophore groups in the polymer main chain: poly{oxy(4,4'-biphenylene)oxytetramethyldisiloxane}, poly{oxy(1,4-phenylene)oxytetramethyldisiloxane}, poly[oxy{(4,4'-isopropylidene)diphenylene}oxytetramethyldisiloxane], poly[oxy{(4,4'-hexafluoroisopropylidene)diphenylene}oxytetramethyldisiloxane], poly{oxy(2,6-naphthalene)oxytetramethyldisiloxane}, poly[oxy{4,4'-(9-fluorenylidene)diphenylene}oxytetramethyldisiloxane], poly{oxy(fluorene-9,9-dimethylene)oxytetramethyldisiloxane}, and poly[oxy{4,4'-(9-fluorenylidene)bis(2-phenoxyethylene)}oxytetramethyldisiloxane]. These materials are soluble in common organic solvents such as $CHCl_3$ and THF. The FTIR spectra of all the polymers exhibit the characteristic Si-O-C stretching frequencies at 1021-1082 $cm^{-1}$. In the THF solution, the polymeric materials show strong maximum absorption peaks at 215-311 nm, with strong maximum excitation peaks at 250-310 nm, and strong maximum fluorescence emission bands at 310-360 nm. TGA thermograms indicate that most of the polymers are stable up to $200^{\circ}C$ with a weight loss of less than 10% in nitrogen.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.525-531
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• 2011

In this paper, experimental analyses have been performed to compare the electrical characteristics of n channel LT(low temperature) and HT(high temperature) poly-Si TFTs(polycrystalline silicon thin film transistors) on quartz substrate according to activated step annealing. The size of the particles step annealed at low temperature are bigger than high temperature poly-Si TFTs and measurements show that the electric characteristics those are transconductance, threshold voltage, electric effective mobility, on and off current of step annealed at LT poly-Si TFTs are high more than HT poly-Si TFT's. Especially we can estimated the defect in the activated grade poly crystalline silicon and the grain boundary of LT poly-Si TFT have more high than HT poly-Si TFT's due to high off electric current. Even though the size of particles of step annealed at low temperature, the electrical characteristics of LT poly-Si TFTs were investigated deterioration phenomena that is decrease on/off current ratio depend on high off current due to defects in active silicon layer.

• Journal of the Korea Organic Resources Recycling Association
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• v.13 no.3
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• pp.97-104
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• 2005

In this study, the change of water content, pH, and combustion weight on the decomposition of poly ester vinyl and high density poly ethylene were examined. The poly ester vinyl was degraded by microorganism in food wastes for 30 days, while high density poly ethylene vinyl was not degraded. Also, the poly ester vinyl was rapidly degraded after the 10 days of operation and its weight was decreased. In the combustion reaction between $300^{\circ}C$ and $600^{\circ}C$, complete combustion was performed. Due to the degradation of poly ester vinyl by microorganism in food waste, the pH was increased from 4.26 to 7.6. During of 60 days operation, poly ester vinyl was degraded over 90%.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.1
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• pp.24-29
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• 2000

We propose a simple method to control the crystallization depth of amorphous silicon (a-Si) deposited by PECVD or LPCVD during the excimer laser annealing (ELA). Employing the new method, we have formed poly-Si/a-Si double film and fabricated a new poly-Si TFT with vertical a-Si offsets between the poly-Si channel and the source/drain of TFT without any additional photo-lithography process. The maximum leakage current of the new poly-Si TFT decreased about 80% due to the highly resistive vertical a-Si offsets which reduce the peak electric field in drain depletion region and suppress electron-hole pair generation. In ON state, current flows spreading down through broad a-Si cross-section in the vertical a-Si offsets and the current density in the drain depletion region where large electric field is applied is reduced. The stability of poly-Si TFT has been improved noticeably by suppressing trap state generation in drain region which is caused by high current density and large electric field. For example, ON current of the new TFT decreased only 7% at a stress condition where ON current of conventional TFT decreased 89%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.1-4
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• 2008

The electrical characteristics of polycrystalline silicon (poly-Si) thin film transistor (TFT) crystallized by excimer laser annealing (ELA) method were evaluated, The polycrystalline silicon thin-film transistor (poly-Si TFT) has higher electric field-effect-mobility and larger drivability than the amorphous silicon TFT. However, to poly-Si TFT's using conventional processes, the temperature must be very high. For this reason, an amorphous silicon film on a buried oxide was crystallized by annealing with a KrF excimer laser (248 nm)to fabricate a poly-Si film at low temperature. Then, High permittivity $HfO_2$ of 20 nm as the gate-insulator was deposited by atomic layer deposition (ALD) to low temperature process. In addition, the solid phase crystallization (SPC) was compared to the ELA method as a crystallization technique of amorphous-silicon film. As a result, the crystallinity and surface roughness of poly-Si crystallized by ELA method was superior to the SPC method. Also, we obtained excellent device characteristics from the Poly-Si TFT fabricated by the ELA crystallization method.

• Polymer(Korea)
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• v.25 no.3
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• pp.385-390
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• 2001

The A-B-A type block copoly(ester-ether)s consisting of poly(L-lactic acid) (PLLA)(A) and poly(oxyethylene-co-oxypropylene)(B) were prepared to improve the mechanical properties and hydrolyzability of PLLA. The block copolymers showed an improved flexibility due to the incorporation of the soft segments. Then, the same copolymer has an improved anti-thrombogenicity probably due to the specific microphase separation structure in the surface. The AFM of the film of the block copolymer revealed that the surface was quite flat in comparison with that of PLLA. Therefore, the flatness of the surface may be related with the increased anti-thrombogenicity of the copolymer film.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.2 s.332
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• pp.15-22
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• 2005

Using the existing analog circuits, required resistor matching and Poly-Si TFT characteristics are investigated for the implementation of analog circuits to be integrated on System-on-Glass. Matching requirements on resistor values, threshold voltage and mobility of poly-Si TFT are derived as a function of the resolution of display system. Also, the effective mobility of poly-Si TFT required for the realization of source driver is analyzed for various panel sizes.

• Composites Research
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• v.12 no.6
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• pp.15-21
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• 1999

Carbon fibers were coated with carboxy modified poly(hydroxy ether)(C-PHE, water dispersed), water soluble polymers poly(hydroxy ether ethanol amine)(PHEA) or water insoluble poly(hydroxy ether)(PHE). Interfacial shear strength of polymer coated carbon fibers was measured by micro-droplet tests with vinyl ester resin, and approximately 30 samples were tested. The interfacial adhesion of poly-mers to carbon fibers was also evaluated, and diffusion behavior of polymer films in vinyl ester resin was investigated. The carbon fibers after testing and diffusion samples were analysed by SEM in order to understand adhesion mechanism. Interfacial shear strength of carbon fibers was enhanced by the coating of PHE and C-PHE which have good or marginal solubility in vinyl ester resin, respectively, but not by the coating of PHEA possibly due to the poor solubility in vinyl ester resin.

• Applied Chemistry for Engineering
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• v.5 no.1
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• pp.182-188
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• 1994

Poly(butadiene-g-MMA) was synthesized by grafting methyl metharcylate on polybutadiene which is intrinsically incompatible with poly(mothy methacrylate)(PMMA) and this graft copolymer was blended with PMMA. Mechanical properties of PMMA-poly(butadiene-g-MMA) blends and PMMA-polybutadiene blends, such as impact strength, tensile strength and haze were determined. Morphological changes of the blends as a function of graft percentage were observed by scanning electron microscopy. Mechanical properties of PMMA-poly(butadiene-g-MMA) blends were better than PMMA-polybutndiene blends. Especially, mechanical properties of PMMA-poly(butadiene-g-MMA) blends were improved nth increasing graft percentage of MMA.