1 |
B. Cheng, M. Cao, R. Rao, A. Inani, P. V. Voorde, and W. M. Greene, 'The Impact of High-k Gate Dielectrics and Metal Gate Electrodes on Sub-100 nm MOSFETs,' IEEE Trans. Electron Devices, 46 [7] 1537-44 (1999)
DOI
ScienceOn
|
2 |
K. Onishi, L. Kang, R. Choi, E. Dharmarajan, S. Gopalan, Y. Jeon, C. S. Kang, B. H. Lee, R. Nieh, and J. C. Lee, 'Dopant Penetration Effects on Polysilicon Gate Hf MOSFET's,' Symposium on VLSI Tech., 131-32 (2001)
|
3 |
B. H. Lee, R. Choi, L. G. Kang, S. Gopalan, R. Nieh, K. Onishi, Y. Jeon, W. J. Qi, C. S. Kang, and J. C. Lee, 'MOSFET Devices with Polysilicon on Single-Layer Hf High-k Dielectrics,' Tech. Dig. Int. Electron Devices Meet., 35-8 (2000)
|
4 |
J. J. Chambers and G. N. Parsons, 'Physical and Electrical Characterization of Ultrathin Yttrium Silicate Insulators on Silicon,' J. Appl. Phys., 90 [2] 918-33 (2001)
DOI
ScienceOn
|
5 |
J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, 'Randnbook of X-Ray Photoelectron Spectroscopy,' pp. 44, 56, and 168, Edited by J. Chastain, Perkin-Elmer Corp. 1992,
|
6 |
T. Kamins, 'Polycrystalline Silicon for the Intergrated Circuit Applications,' p. 23, Kluwer Academic Publishers, Boston/Dordrecht /Lancaster, 1988
|
7 |
J.P. Maria, D. Wicaksana, A. I. Kingon, B. Busch, H. Schulte, E. Garfunkel, and T. Gustafsson, 'High Temperature Stability in Lanthanum and Zirconia-Based Gate Dielectrics,' J. Appl. Phys., 90 [7] 3476-82 (2001)
DOI
ScienceOn
|
8 |
S. K. Kang, D. H. Ko, E. H. Kim, M. H. Cho, and C. N. Whang, 'Interfacial Reactions in the Thin Film on Chemically Oxidized (100) Silicon Substrate Systems,' Thin Solid Films, 353 8-11 (1999)
DOI
ScienceOn
|
9 |
M. Copel, M. Gribelyuk, and E. Gusev, 'Structure and Stability of Ultrathin Zirconium Oxide Layers on Si(001),' Appl. Phys. Lett., 76 [4] 436-38 (2000)
DOI
ScienceOn
|
10 |
W. J. Qi, R. Nieh, B. H. Lee, L. Kang, Y. J. Jeon, K. Onish, T. Ngai, S. Banerjee, and J. C. Lee, 'MOSCAP and MOSFET Characteristics Using Gate Dielectric Deposited Directly on Si' Tech. Dig. Int. Electron Devices Meet., 145-48 (1999)
|
11 |
G. D. Wilk, R. M. Wallace, and J. M. Anthony, 'High-k Gate Dielectrics: Current Status and Materials Properties Considerations,' J. Appl. Phys., 89 [10] 5243-75 (2001)
DOI
ScienceOn
|
12 |
A. Callegari, E. Cariter, M. Gribelyuk, H. F. Okornschmidt, and T. Zabel,'Physical and Electrical Characterization of Hafnium Oxide and Hafnium Silicate Sputtered Films,' J. Appl. Phys., 90 [12] 6466-75 (2001)
DOI
ScienceOn
|
13 |
G. D. Wilk, R. M. Wallace, and J. M. Anthony,'Hafnium and Zirconium Silicates for Advanced Gate Dielectrics,' J. Appl. Phys., 87 [1] 484-92 (2000)
DOI
ScienceOn
|
14 |
G. D. Wilk and R. M. Wallace, 'Electrical Properties of Hafnium Silicate Gate Dielectrics Deposited Directly on Silicon,' Appl. Phys. Lett., 74 [19] 2854-56 (1999)
DOI
ScienceOn
|
15 |
A. Kawamoto, K. Cho, P. Griffin, and R. Dutton, 'First Principles Investigation of Scaling Trends of Zirconium Silicate Interface Band Offsets'' J. Appl. Phys., 90 [3] 1333-41 (2001)
DOI
ScienceOn
|
16 |
J. Morais, E. B. O. da Rosa, L. Miotti, R. P. Pezzi, I. J. R. Baumvol, A. L. P. Rotondaro, M. J. Bevan, and L. Colombo, 'Stability of Zirconium Silicate Films on Si Under Vacuum and O2 Annealing,' Appl. Phys. Lett., 78 [17] 24'46-48 (2001)
DOI
ScienceOn
|
17 |
W. J. Qi, R. Nieh, E. Dharmarajan, B. H. Lee, Y. Jeon, L. Kang, K. Onishi, and J. C. Lee, 'Ultrathin Zirconium Silicate Film with Good Thermal Stability for Alternative Gate Dielectric Applicat,' Appl. Phys. Lett., 77 [11] 1704-06 (2000)
|
18 |
S.K. Kang, J. J. Kim, B. G. Min, D.H. Ko, C. W. Yang, and K. Y. Lim, 'Physical and Electrical Properties of Polycrys talline Si_{1-x}Ge \Ge{_x}Deposited Using Single-Wafer-Type Low Pressure CVD,' J. Electrochem. Soc., 151 [1] G13-G17 (2004)
DOI
ScienceOn
|
19 |
I. Barin, 'Thermochemical Data of Pure Substances,' pp. 1352, 1359, 1384, and 1736, Edited by H. F. Ebel and C. Dyllick-Brenzinger, VCR, New York, 1989
|