• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.1
• /
• pp.17-21
• /
• 2011

Copper (Cu) had been attractive material due to its superior properties comparing to other metals such as aluminum or tungsten and considered as the best metal which can replace them as an interconnect metal in integrated circuits. CMP (Chemical Mechanical Polishing) technology enabled the production of excellent local and global planarization of microelectronic materials, which allow high resolution of photolithography process. Cu CMP is a complex removal process performed by chemical reaction and mechanical abrasion, which can make defects of its own such as a scratch, particle and dishing. The abrasive particles remain on the Cu surface, and become contaminations to make device yield and performance deteriorate. To remove the particle, buffing cleaning method used in post-CMP cleaning and buffing is the one of the most effective physical cleaning process. AE(Acoustic Emission) sensor was used to detect dynamic friction during the buffing process. When polishing is started, the sensor starts to be loaded and produces an electrical charge that is directly proportional to the applied force. Cleaning efficiency of Cu surface were measured by FE-SEM and AFM during the buffing process. The experimental result showed that particles removed with buffing process, it is possible to detect the particle removal efficiency through obtained signal by the AE sensor.

• Journal of the Korean Society for Precision Engineering
• /
• v.29 no.3
• /
• pp.289-294
• /
• 2012

There are several indicators to represent characteristics of chemical mechanical planarization (CMP) such as material removal rate (MRR), surface quality and removal uniformity on a wafer surface. Especially, the removal uniformity on the wafer edge is one of the most important issues since it gives a significant impact on the yield of chip production on a wafer. Non-uniform removal rate at the wafer edge (edge effect) is mainly induced by a non-uniform pressure from nonuniform pad curvature during CMP process, resulting in edge exclusion which means the region that cannot be made to a chip. For this reason, authors tried to minimize the edge exclusion by using an edge profile control (EPC) ring. The EPC ring is equipped on the polishing head with the wafer to protect a wafer from the edge effect. Experimental results showed that the EPC ring could dramatically minimize the edge exclusion of the wafer. This study shows a possibility to improve the yield of chip production without special design changes of the CMP equipment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.171-175
• /
• 2001

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectrics and metal, which can apply to employed in integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of free-defects in inter level dielectrics and metal. Especially, defects like (micro-scratch) lead to severe circuit failure, and affects yield. Current conditioning method - bladder type, orbital pad motion- usually provides unsuitable pad profile during ex-situ conditioning near the end of pad life. Since much of the pad wear occurs by the mechanism of bladder type conditioning and its orbital motion without rotation, we need to implement new ex-situ conditioner which can prevent abnormal regional force on pad caused by bladder-type and also need to rotate the pad during conditioning. Another important study of ADPC is related to the orbital scratch of which source is assumed as diamond grit dropped from the strip during ex-situ conditioning. Scratch from diamond grit damaged wafer severely so usually scraped. Figure 1 shows the typical shape of scratch damaged from diamond. e suspected that intensive forces to the edge area of bladder type stripper accelerated the drop of Diamond grit during conditioning. so new designed Flat stripper was introduced.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.3
• /
• pp.175-184
• /
• 2001

In this study, the improved throughput and stability in device fabrication could be obtained by applying CMP process to STi structue in 0.18 um semiconductor device. To employ the CMP process in STI structure, the Reverse Moat Process used to be added after STI Fill, as a result, the process became more complex and the defect were seriously increased than they had been,. Removal rate of each thin film in STI CMP was not uniform, so, the device must have been affected. That is, in case of excessive CMP, the damage on the active area was occurred, and in the case of insufficient CMP nitride remaining was happened on that area. Both of them deteriorated device characteristics. As a solution to these problems, the development of slurry having high removal rate and high oxide to nitride selectivity has been studied. The process using this slurry afford low defect levels, improved yield, and a simplified process flow. In this study, we evaluated the 'High Selectivity Slurry' to do a global planarization without reverse moat step, and also we evaluated EPD(Eend Point Detection) system with which 'in-situ end point detection' is possible.

• International Journal of Precision Engineering and Manufacturing
• /
• v.5 no.1
• /
• pp.47-54
• /
• 2004

In this study, the electrorheological (ER) fluid was used as finishing agent. Since the apparent viscosity can be controlled by an electric field, the ER fluid can be one of efficient materials in finishing processes. To finish small 3-dimensional structures such as the aspherical surface in optical elements, the possible arrangement of a tool, part and auxiliary electrode was described. We examined the influence of the addition of a few abrasive particles on the performance of the ER fluid by measuring yield stress and observed the behavior of abrasive particles in the ER fluid by a CCD camera, which had been also theoretically predicted from the electromechanical principles of particles. On the basis of the above results, the steady flow analysis around the rotating micro tool was performed considering the non-uniform electric field. Finally, borosilicate glass was finished using the mixture of the ER fluid and abrasive particles and material removal with field strength and surface roughness were investigated.

• Korean Journal of Materials Research
• /
• v.27 no.6
• /
• pp.318-324
• /
• 2017

In this study, two Fe-30Mn-0.2C-(1.5Al) high-manganese steels with different surface conditions were hydrogen-charged under high temperature and pressure; then, tensile testing was performed at room temperature in air. The yield strength of the 30Mn-0.2C specimen increased with decreasing surface roughness(achieved via polishing), but that of the 30Mn-0.2C-1.5Al specimen was hardly affected by the surface conditions. On the other hand, the tendency of hydrogen embrittlement of the two high-manganese steels was not sensitive to hydrogen charging or surface conditions from the standpoints of elongation and fracture behavior. Based on the EBSD analysis results, the small decrease in elongation of the charged specimens for the Fe-30Mn-0.2C-(1.5Al) high-manganese steels was attributed to the enhanced dislocation pile-up around grain boundaries, caused by hydrogen.

• Tribology and Lubricants
• /
• v.31 no.6
• /
• pp.239-244
• /
• 2015

Chemical mechanical polishing (CMP) is one of the most important processes for enabling sub-14 nm semiconductor manufacturing. Moreover, post-CMP defect control is a key process parameter for the purpose of yield enhancement and device reliability. Due to the complexity of device with sub-14 nm node structure, CMP-induced defects need to be fixed in the CMP in-situ cleaning module instead of during post ex-situ wet cleaning. Therefore, post-CMP in-situ cleaning optimization and cleaning efficiency improvement play a pivotal role in post-CMP defect control. CMP in-situ cleaning module normally consists of megasonic and brush scrubber processes. And there has been an increasing effort for the optimization of cleaning chemistry and brush scrubber cleaning in the CMP cleaning module. Although there have been many studies conducted on improving particle removal efficiency by brush cleaning, these studies do not consider the effects of brush contamination. Depending on the process condition and brush condition, brush cross contamination effects significantly influence post-CMP cleaning defects. This study investigates brush cross contamination effects in the CMP in-situ cleaning module by conducting experiments using 300mm tetraethyl orthosilicate (TEOS) blanket wafers. This study also explores brush pre-treatment in the CMP tool and proposes recipe effects, and critical process parameters for optimized CMP in-situ cleaning process through experimental results.

• Journal of Radiation Industry
• /
• v.10 no.4
• /
• pp.167-171
• /
• 2016

The scintillation efficiency of the polystyrene based plastic scintillator depends on the ratio of the wavelength shifters, organic fluors(PPO and POPOP). Thus, 24 samples of the plastic scintillator were fabricated in order to find out the optimum ratio of the wavelength shifters in the plastic scintillator. The fabricated plastic scintillators were trimmed through a cutting and polishing process. They were used in gamma energy spectrum measurement with the $^{137}Cs$ emitting mono-energy photon with 662 keV for the comparison of the scintillation efficiency. As a result, it was found out that the scintillator sample with 1.00 g of PPO (2,5-Diphenyloxazole) and 0.50 g of POPOP (1,4-Bis(5-phnyl-2oxidazolyl)benzene) dissolved in 100 g of styrene solution has the optimum ratio in terms of the light yield of the polystyrene based plastic scintillator.

• Asian-Australasian Journal of Animal Sciences
• /
• v.10 no.5
• /
• pp.445-454
• /
• 1997

Rice bran commonly available in Bangladesh is a mixture of rice hulls (60%), bran (35%) and polishing (5%), referred here as rice mill feed (RMF). Dose response effect of RMF supplementation to a straw diet including a zero level was measured on the intake, digestibility, nitrogen balance, microbial N yield and growth rate of growing native (Bos indicus) bulls. Twelve bulls of 33 months old and $272{\pm}31.5kg$ weight were randomly allocated to diets having 0 (T1), 1 (T2) and 2 (T3) kg RMF in addition to 200 g wheat bran, 200 g molasses, 60 g salt and 30 g oyestershe\l powder. Concentrate intake was 5.5, 19.2 and 29.5% of the dietary intake for the T1, T2 and T3 treatment respectively. RMF supplementation had no significant effect on the straw DM intake. However, with the increasing levels of RMF supplementation, total DM & digestible OM intake and the whole gut digestibilities of DM, OM, N & ADF increased but in deminishig return. Total microbial N yield estimated from the urinary purine excretion were 15.35, 26.56 and 38.44 g/d for the treatment T1, T2 and T3 respectively. Both the N intake and the N balance increased linearly in response to increasing level of RMF. Supplementation of RMF linearly increased the energy intake and dietary energy concentration. Growth rate in the T1, T2 and T3 treatments were 112, 125 and 250 g/d respctively. The basal N excretion and the maintenance energy requirement of the experimental animals were estimated to be 615 mg/kg $W^{0.75}/d$ and 447 kJ/kg $W^{0.75}/d$ respectively. The estimated efficiency on N utilization was 0.83 mg/mg of N intake ($r^2=0.997$) while the efficiency of metabolizable energy utilization for growth was 0.15. Since animal refused higher levels of RMF, inclusion up to 2 kg level (about 25% of the total DM intake) appears to have no depressing effect on the performances of animal. However, RMF itself fail to meet the critical nutrient need of the rumen microbes. Therefore response of supplementing RMF after correcting the critical nutrient deficiency need to be studied.

• Magazine of the Korean Society of Agricultural Engineers
• /
• v.45 no.7
• /
• pp.70-82
• /
• 2003

A pilot study was performed from July 1998 to December 2002, including winter performance, to examine seasonal performance of a constructed wetland and subsequent pond system for treatment of sewage in small communities of Korea. Pond was operated as a intermittent-discharge pond during winter period, and continuous flow system during growing season; its effects was evaluated from December 2001 to April 2003. The subsurface flow (SSF) wetland was satisfactory for treating sewage with good removal efficiency even during the winter period. The wetland effluent concentrations of $BOD_5$ and TSS were often higher in winter than in the growing season, but this was explained by the higher loading rates, rather than lower removal efficiency. The relatively poor-quality wetland effluent was further polished during winter in the pond. The upper layer of the pond water column became remarkably clear immediately after ice melt. In the growing season, ponds could be operated as a continuous flow system to remove nutrients and pathogens, and the effluent of pond could be reused as a supplemental irrigation water without risk of infection by sewage-borne pathogens as well as causing adverse effect on growth and yield. Overall, the wetland system was found to be adequate for treating sewage with stable removal efficiency, and the intermittent-discharge pond was found to be effective for further polishing if necessary. Therefore, the combination of a wetland and subsequent pond system and reuse of effluent as crop irrigation water is recommended as a practical alternative to treat sewage in Korean small communities, and partial discharge of pond water in March is suggested.