• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.569-570
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• 2006

The conditioning process is very important process for the CMP (Chemical Mechaning Polishing). This process regenerates the roughness of the polishing pad during the CMP process, increases the MRR (Material Removal Rate) and gives us longer pad life so conditioning process is essential for the CMP, and conditioning process influences the polishing pad shape gradually. Conditining process is related to the Non-Uniformity. In This paper, Kinematic of the conditioning process and mathematic modeling of the pad wear is studied and result shows how the various parameters influence the pad shape and WIWNU[1]. Consequently through these parameter, optimal design of the conditioning process equipment is predicted.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.219-225
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• 2005

To investigate the effects of slurry temperature on the chemical mechanical polishing(CMP) performance of oxide film with silica and ceria slurries, we have studied slurry properties as a function of different slurry temperature. Also, the effects of each input parameter of slurry on the oxide CMP characteristics were investigated. The pH showed a slight tendency of decrease, the conductivity in slurries showed an increased tendency, the mean particle size in slurry decreased, and the zeta potential of slurry decreased with temperature. The removal rates significantly increased and maintained at the specific levels over 4$0^{\circ}C$. The better surface morphology of oxide films could be obtained at 40 $^{\circ}C$ of silica slurry and at 90 $^{\circ}C$ of ceria slurry. It is found that the CMP performance of oxide film could be significantly improved or controlled by change of slurry temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.711-714
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• 2004

Chemical mechanical polishing (CMP) has been widely accepted for the global planarization of multi-layer structures in semiconductor manufacturing. However, it still has various problems to the CMP equipment, in particular, among the CMP components, process variables are very important parameters in determining the removal rate and non-uniformity. Using a design of experiment (DOE) approach, this study was performed investigating the interaction between the various parameters such as turntable and head speed, down force and back pressure during CMP. Using statistical analysis techniques, a better understanding of the interaction behavior between the various parameters and the effect on removal rate, no-uniformity and ETC (edge to center) is achieved.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1889-1892
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• 2003

The fabrication of micro-size patterning on alumina substrate is generated by laser direct writing, which has high precision and selectivity of various laser beam energies. The depth and width of patterns is affected by laser parameter such as laser power, scan rate. Through the chemical and mechanical polishing Pd seeds was effectively got rid of alumina substrate for selectivity electroless Ni plating. Thermal treatment is good method for changing electrical property of conductor line, because the treatment can control of the grain size.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.12 no.2
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• pp.114-120
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• 2013

An EP(Electrolytic Polishing)-MAP(Magnetic Abrasive Polishing) hybrid process was applied to remove burr on the micro pattern. Micro pattern fabrication processes are combined with micro milling and EP-MAP hybrid process for deburring. Depending on the micro milling conditions which are applied, micro burrs are formed around the side and top of the pattern. The EP-MAP deburring is used to remove these burrs effectively. To optimize removal rate and form error in the EP-MAP hybrid process, a design of experiment was performed. The effect of deburring process and form error of micro pattern are evaluated via SEM images and the results of AFM.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.39 no.9
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• pp.923-928
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• 2015

In this paper, we propose an ultrasonic magnetic abrasive polishing (US-MAP) technique to effectively machine a high-strength material, and we prove the efficiency of hybrid finishing. We use Taguchi's experimental method to determine the influence of each parameter. Based on the results, US-MAP exhibited a higher polishing efficiency than traditional MAP, and a suitable frequency for hybrid finishing was 28 kHz. When investigating the effect of the parameters on the surface roughness, the ultrasonic amplitude had the greatest effect. However, when machining with $55-{\mu}m$ amplitude, the machining efficiency decreased as the magnetic flux density varied.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.151-153
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• 2005

Indium tin oxide (ITO) thin film was polished by chemical mechanical polishing (CMP) by the change of process parameters for the improvement of electrical and optical properties of ITO thin film. Light transparent efficiency of ITO thin film was improved after CMP process at the optimized process parameters compared to that before CMP process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.354-355
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• 2005

Indium tin oxide (ITO) thin film was polished by chemical mechanical polishing (CMP) by the change of process parameters for the improvement of electrical and optical properties of ITO thin film. Light transparent efficiency of ITO thin film was improved after CMP process at the optimized process parameters compared to that before CMP process.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2003.05a
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• pp.143-147
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• 2003

Despite of outstanding optical performance of glass lens, glass lens have not been widely used because of poor productivity and high cost due to manufacturing process i.e. grinding, polishing. However, press-forming method of glass lens overcomes this disadvantage because of mass production. When glass lens is produced by press-forming method using closed die, it is needed that the volume of glass lens preform precisely measured in order to prevent incomplete products and to increase in life of die. The present paper shows the shortcoming of forming process with closed die, and performs FEM simulation of forming process with open die in order to overcome this shortcoming. The design parameter of open die is selected in standard of assembly with optical module and maintenance of optical performance. FEM simulation is carried out with selected parameter of open die and two basic preform. According to distribution of effective strain in glass lens, optical property of glass lens formed at each set of die and preform is compared.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.58-58
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• 2009

Uniformity related issues in chemical mechanical polishing (CMP) are within wafer non-uniformity (WIWNU), wafer to wafer non-uniformity (WTWNU), planarity and dishing/erosion. Here, the WIWNU that originates from spatial distribution of independent variables such as temperature, sliding distance, down force and material removal rate (MRR) during CMP, relies to spatial dependency. Among various sources of spatial irregularity, hardness and modulus of pad and surface roughness in sources for pad uniformity are great, especially. So, we investigated the spatial variation of pad surface characteristics using pad measuring system (PMS) and roughness measuring system. Reduced peak height ($R_{pk}$) of roughness parameter shows a strong correlation with the removal rate, and the distribution of relative sliding distance onwafer during polishing has an effect on the variation of $R_{pk}$ and WIWNU. Also, the results of pad wear profile thorough developed pad profiler well coincides with the kinematical simulation of conditioning, and it can contribute for the enhancement of WIWNU in CMP process.