Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Optimization of Cu CMP Process Parameter using DOE Method

DOE 방법을 이용한 Cu CMP 공정 변수의 최적화

  • 최민호 (중앙대학교 전자전기공학부) ;
  • 김남훈 (조선대학교 에너지자원신기술연구소) ;
  • 김상용 (동부아남반도체 SEE팀) ;
  • 장의구 (중앙대학교 전자전기공학부)
  • Published : 2004.11.11
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Abstract

Chemical mechanical polishing (CMP) has been widely accepted for the global planarization of multi-layer structures in semiconductor manufacturing. However, it still has various problems to the CMP equipment, in particular, among the CMP components, process variables are very important parameters in determining the removal rate and non-uniformity. Using a design of experiment (DOE) approach, this study was performed investigating the interaction between the various parameters such as turntable and head speed, down force and back pressure during CMP. Using statistical analysis techniques, a better understanding of the interaction behavior between the various parameters and the effect on removal rate, no-uniformity and ETC (edge to center) is achieved.

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