• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.25 no.2
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• pp.112-117
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• 2016

In the construction industry, concrete polishing is used to grind and rub the surface of concrete grounds with polishing machines to increase the strength of the concrete after deposition. Polishing is performed manually in spite of the generation of dust and the requirement of frequent replacements of the polishing pad. The concrete polishing robot developed in this research is a novel polishing automation system for preventing the workers from being exposed to poor working environments. This robot is able to change multiple polishing tools automatically; however, the workers can conveniently replace the worn-out polishing pads with new ones. The mobile platform of the polishing robot employs omnidirectional wheels to enable a flexible motion even in small and complicated workspaces. To evaluate the performance of the developed concrete polishing robot, extensive experiments including square trajectory tracking, automatic tool changing, actual polishing, and path generation simulation were performed.

• Tribology and Lubricants
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• v.34 no.6
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• pp.279-283
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• 2018

In this study, we investigate the behavior of abrasive particles and change of the stick-slip pattern according to chemical mechanical polishing (CMP) process parameters when a large number of abrasive particles are fixed on a pad. The CMP process is simulated using the finite element method. In the simulation, the abrasive grains are composed of those used in the actual CMP process. Considering the cohesion of the abrasive grains with the start of the CMP process, abrasive particles with various sizes are fixed onto the pad at different intervals so that stick-slip could occur. In this analysis, we determine that when the abrasive particle size is relatively large, the stick-slip period does not change as the pressure increases while the moving speed is constant. However, if the size of the abrasive grains is relatively small, the amount of deformation of the grains increases due to the elasticity of the pad. Therefore, the stick-slip pattern may not be observed. As the number of abrasive particles increases, the stick-slip period and displacement decrease. This is consistent with the decrease in the von Mises yield stress value on the surface of the wafer as the number of abrasive grains increases. We determine that when the number of the abrasive grains increases, the polishing rate, and characteristics are improved, and scratches are reduced. Moreover, we establish that the period of stick-slip increases and the change of the stick-slip size was not large when the abrasive particle size was relatively small.

• Tribology and Lubricants
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• v.40 no.2
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• pp.67-70
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• 2024

Chemical mechanical planarization (CMP) is an essential process for ensuring high integration when manufacturing semiconductor devices. CMP mainly requires the use of polyurethane-based polishing pads as an ultraprecise process to achieve mechanical material removal and the required chemical reactions. A diamond disk performs pad conditioning to remove processing residues on the pad surface and maintain sufficient surface roughness during CMP. However, the diamond grits attached to the disk cause uneven wear of the pad, leading to the poor uniformity of material removal during CMP. This study investigates the pad wear rate profile according to the swing motion of the conditioner during swing-arm-type CMP conditioning using deep learning. During conditioning, the motion of the swing arm is independently controlled in eight zones of the same pad radius. The experiment includes six swingmotion conditions to obtain actual data on the pad wear rate profile, and deep learning learns the pad wear rate profile obtained in the experiment. The absolute average error rate between the experimental values and learning results is 0.01%. This finding confirms that the experimental results can be well represented by learning. Pad wear rate profile prediction using the learning results reveals good agreement between the predicted and experimental values.

• The KSFM Journal of Fluid Machinery
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• v.6 no.4 s.21
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• pp.21-28
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• 2003

CMP (Chemical Mechanical Polishing) is to achieve adequate local and global planarization for future sub-micrometer VLSI requirements. In designing CMP, numerical computation is quite helpful in terms of reducing the amount of experimental works. Stresses on pad, concentration of particles and particle tracking are studied for design. In this research, the optimization of grooved pad shape of CMP is performed through numerical investigation of slurry flow in CMP process. The result indicates that the combination of sinusoidal groove and skewed pad is the most optimal shape among the twenty candidates. Useful information can be obtained in velocity, pressure, stress, concentration of particles and particles trajectories, etc.

• Journal of the Semiconductor & Display Technology
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• v.10 no.3
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• pp.49-52
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• 2011

This paper shows the results of classical molecular dynamics modeling for the interaction between spherical nano abrasive and substrate in chemical mechanical polishing processes. Atomistic modeling was achieved from 3-dimensional molecular dynamics simulations using the Morse potential functions for chemical mechanical polishing. The abrasive dynamics was modeled by three cases, such as slipping, rolling, and rotating. Simulation results showed that the different dynamics of the abrasive results the different features of surfaces. The simulation concerning polishing pad, abrasive particles and the substrate has same results.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.435-437
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• 2002

Polishing of copper, a process called copper chemical mechanical polishing, is a critical, intermediate step in the planarization of silicon wafers. During polishing, the electrodeposited copper films are removed by slurries: and the differential polishing rates between copper and the surrounding silicon dioxide leads to a greater removal of the copper. The differential polishing develops dimples and furrows; and the process is called dishing and erosion. In this work, we present the results of experiments on dishing and erosion of copper-CMP, using patterned silicon wafers. Results are analyzed for the pattern factors and properties of the copper layers. Three types of pads - plain, perforated, and grooved - were used for polishing. The effect of slurry chemistries and pad soaking is also reported.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.939-942
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• 1997

In chemical mechanical polishing(CMP) there are many factors affecting the results. Temperature is one of the factors and it affects the removal rate. That is, the higher it arise, the more the material is removed. But the detailed temperature behavior is not discovered. In this study, we discover the distribution of temperature across the pad where the wafer has just been polished. And then we reveal the cause of the result in connection with the mechanical structure. In addition, we also discover the relationship of the friction force and normal force. With the result of two forces, we get the friction coefficient and obtain the contact model of the wafer and pad.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.46-49
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• 2003

Microsystem technology (MST) which originated from semiconductor processes has been widely spreaded into tile other industry such as sensors, micro fluidics and displays. The MST, however. has been troubled in spreading with its high cost and material limitations. So, in this paper, new process for micromolding technology using silicone rubber mold was introduced. Silicone rubber mold, which was fabricated by vacuum casting. can be transferred a master pattern to a final product with the same shape but different materials. In order to verify the possibility of application of silicone rubber mold to the MST, its transferability was evaluated. and then it applied to the fabrications of polishing pad and PDP barrier ribs.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.27 no.8
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• pp.1380-1387
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• 2003

Microsystem technology (MST) which originated from semiconductor processes has been widely spreaded into the other industry such as sensors, micro fluidics and displays. The MST, however, has been troubled in spreading with its high cost and material limitations. So, in this paper, new process for micromolding technology using silicone rubber mold was introduced. Silicone rubber mold, which was fabricated by vacuum casting, can be transferred a master pattern to a final product with the same shape but different materials. In order to verify the possibility of application of silicone rubber mold to the MST, its transferability was evaluated, and then it applied to the fabrications of polishing pad and PDP barrier ribs.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.1816-1821
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• 2003

The sapphire wafer for blue light emitting device was manufactured by the implementation of the chemical and mechanical polishing process. The surface polishing of crystalline sapphire wafer was characterized by zeta potential measurement. The reduction process with the alkali slurry provides the surface chemical reaction with sapphire atoms. The poly-urethane pad also provides the frictional force to take out the chemically-reacted surface layers. The surface roughness was measured by the atomic force microscope and the crystalline quality was characterized by the double crystal X -ray diffraction analysis.