• Title/Summary/Keyword: polishing methods

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Observation of machining and polishing according to the dental barrel polishing time (치과용 바렐연마의 시간에 따른 가공도 및 연마도 관찰)

  • Hyeon-jeong Ko;Sung-min Choi
    • Journal of Technologic Dentistry
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    • v.45 no.4
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    • pp.87-94
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    • 2023
  • Purpose: This study aimed to observed changes in the shape of dental barrels based on application time. Machinability measures the angle of alloy specimens. Polishing performance measures the surface roughness of alloy specimens. Methods: The dental barrel polishing equipment used in this study was a Snow Barrel (DK Mungyo). Three types of cobalt-chromium alloys for partial dentures were used as specimens (BC CAST R [BP]; Bukwang, Vera PDI [VP]; Aalbadent, and GM 800+ [GP]; Dentaurum). Specimens were prepared in the form of plates (10 mmx10 mmx2 mm). Dental barrel polishing was performed at 450 rpm for 60 minutes with intervals of 5 minutes. The processing angle was measured using a microscope (SZ61; Olympus). Results: For the angle measurement, the VPC specimen was measured at 78.64°, 36.00° for the VP60 specimen, 79.57° for the BP control (BPC) specimen, 28.07° for the BP60 specimen, 75.01° for the GPC specimen, and 39.92° for the GP60 specimen. For the surface roughness measurements, the average surface roughness of the VPC and VP15 specimens were 1.09 ㎛ and 0.26 ㎛, respectively. The average surface roughness of the BPC and BP20 specimens were 1.77 ㎛ and 0.29 ㎛, respectively. The average surface roughness of the GPC and GP15 specimens were 1.08 ㎛ and 0.27 ㎛. Conclusion: The results were excellent after about 20 minutes of dental barrel polishing conditions presented in this study.

Robot off-line programming system for polishing task (금형 연마용 로보트의 Off-Line Programming System)

  • 국금환;최기봉
    • 제어로봇시스템학회:학술대회논문집
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    • 1990.10a
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    • pp.41-46
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    • 1990
  • In the existing robot programming methods, off-line method becames important role of programming because of improvement of hardware and software of PC. The purpose of this study is to develop practical robot programming system for polishing task using PC. In the first place, we have investigated the existing robot programming systems, and derived the requirement of this programming system from the existing systems. And we have decided the structure of this system. After that, we have developed this system. Using Windows software, this programming system has man/machine interface function. So users can use easily and quickly.

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Robot Off-Line Programming System for Polishing Task (금형 연마용 로보트의 Off-Line Programming System)

  • Guk, Geum-Hwan;Choe, Gi-Bong
    • 한국기계연구소 소보
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    • s.20
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    • pp.33-39
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    • 1990
  • In the existing robot programming methods, off-line method because important role of programming because of improvement of hardware and softeare of PC. The purpose of this study is to develop practical robot programming system for polishing task using PC. In the first place, we have investigated the existing robot programming systems, and derived the requirement of this programming system from the existing systems. And we have decied the structure of this system. After that, we have developed this system. Using Windows software, this programming system has man/machine interface function. Therefore users can use easily and quickly.

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A Study on a Wet etching of ILD (Interlayer Dielectric) Film Wafer (습식 에칭에 의한 웨이퍼의 층간 절연막 가공 특성에 관한 연구)

  • 김도윤;김형재;정해도;이은상
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1997.10a
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    • pp.935-938
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    • 1997
  • Recently, the minimum line width shows a tendency to decrease and the multi-level increase in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. But there are several defects in CMP such as micro-scratches, abrasive contaminations, and non-uniformity of polished wafer edges. Wet etching include of Spin-etching can improve he defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(INterlayer-Dielectric) was removed by CMP and wet-etching methods in order to investigate the superiority of wet etching mechanism. In the thin film wafer, the results were evaluated at a viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And pattern step height was also compared for planarization characteristics of the patterned wafer.

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연마법이 치과용 복합레진의 표면 조도에 미치는 영향에 관한 실험적 연구

  • Yang, Hong-So
    • The Journal of the Korean dental association
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    • v.24 no.7 s.206
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    • pp.633-642
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    • 1986
  • In order to evaluate the effects of various finishing devices (Sof-Lex disc, diamond point, rubber point, fussure bur) on the surface roughness or two composite resins (Restodent, Enamelite 500), 15 specimens for each composite resin were made in the mold. Composite resin was prepared on the mixing pad by manufacturer's direction and filled in the mold cavity. A sheet of matrix is immediately placed on it and hold for 5 minutes to polymerize the resin. Surface finish was done after 10 minutes from the start of mixing. Scanning electron microscopy and surface profilometer were used to evaluate the surface roughness, porositites and striations of dental composite resins. The following results were observed; 1. The best finished surface was formed by celluloid matrix band. 2. Rubber point was excellent polishing device for Restodent. 3. Sof-Lex disc was the device of choice for polishing Enamelite 500. 4. Different polishing methods were effective for different composite resins. 5. SEMs of variously finished surfaces supported the profilometer measurements.

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EXPERIMENTAL STUDIES ON THE SURFACE ROUGHNESS OF GLASS IONOMER CEMENT RESTORATIONS (Glass Ionomer Cement 수복물(修復物)의 표면거칠기에 관한 실험적 연구)

  • Kim, Kwang-Soon;Lee, Seung-Jong;Lee, Chung-Suck
    • Restorative Dentistry and Endodontics
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    • v.17 no.1
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    • pp.166-180
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    • 1992
  • One disadvantage of Glass Ionomer Cement Restoration is the difficulty in polishing. To find the appropriate polishing method, we polished the surface of Glass Ionomer Cement Restorations by 11 combination methods serially using disks shared with large-small particles and evaluated the polishing process in terms of surface roughness, surface roughness curve, and SEM findings. In addition, a visible light curing type bonding material was applied to evaluate the possible improvement in surface properties. The following results were obtained. 1. The disk surface of Glass Ionomer Cement was polished serially by disks with superfine particles, but it didn't become smooth. 2. The surface of Microfilled Composite resin became smoother as using a disk with finer particles. 3. When a visible light curing type bonding material was applied in finishing process, the surface of Glass Ionomer Cement became smooth as much as the applied matrix.

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Methodological Study for Recycle of Chemical Mechanical Polishing Slurry (슬러리 Modification 에 대한 연구)

  • Park, Sung-Woo;Seo, Yong-Jin;Lee, Woo-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.567-568
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    • 2006
  • To investigate the recycle possibility of slurry for the oxide-chemical mechanical polishing (oxide-CMP) application, three kinds of retreated methods were introduced as follows: First, the effects on the addition of silica abrasives and the diluted silica slurry (DSS) on CMP performances were investigated. Second, the characteristics of mixed abrasive slurry (MAS) using non-annealed and annealed alumina ($Al_2O_3$) powder as an abrasive added within DSS were evaluated to achieve the improvement of removal rates (RRs) and within-wafer non-uniformity (WIWNU%). Third, the oxide-CMP wastewater was examined in order to evaluate the possible ways of reusing it. And then, we have discussed the CMP characteristics of silica slurry retreated by mixing of original slurry and used slurry (MOS).

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Determination of Optimal Design Level for the Semiconductor Polishing Process by Taguchi Method (다구찌 기법을 활용한 반도체 연마 공정의 최적 설계수준 결정)

  • Sim, Hyun Su;Kim, Yong Soo
    • Journal of Korean Society for Quality Management
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    • v.45 no.2
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    • pp.293-306
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    • 2017
  • Purpose: In this study, an optimal design level of influencing factors on semiconductor polishing process was determined to minimize flexion of both sides on wafers. Methods: First, significant interactions are determined by the stepwise regression method. ANOVA analysis on SN ratio and mean of dependent variable are performed to draw mean adjustment factors. In addition, the optimal levels of mean adjustment factors are decided by comparing means of each level of mean adjustment factors. Results: As a result of ANOVA, a mean adjustment factor was determined as a width of formed flexion on the plate. The mean of the difference has the nearest to 0 in the case when the width of formed flexion has level 2 (4mm). Conclusion: Optimal design levels of semiconductor polishing process are determined as follows; (i) load applied to the wafer carrier has a level 1 (3psi), (ii) load applied to the wafer has a level 1(3psi), (iii) the amount of slurry supplied during polishing has a level 3 (300 co/min), (iv) the width of formed flexion on the plate has level 2 (4mm).

A Study on the Optimal Machining of 12 inch Wafer Polishing by Taguchi Method (다구찌 방법에 의한 12인치 웨이퍼 폴리싱의 가공특성에 관한 연구)

  • Choi, Woong-Kirl;Choi, Seung-Gun;Shin, Hyun-Jung;Lee, Eun-Sang
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.11 no.6
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    • pp.48-54
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    • 2012
  • In recent years, developments in the semiconductor and electronic industries have brought a rapid increase in the use of large size silicon. However, for many companies, it is hard to produce 400mm or 450mm wafers, because of excesive funds for exchange the equipments. Therefore, it is necessary to investigate 300mm wafer to obtain a better efficiency and a good property rate. Polishing is one of the important methods in manufacturing of Si wafers and in thinning of completed device wafers. This research investigated the surface characteristics that apply variable machining conditions and Taguchi Method was used to obtain more flexible and optimal condition. In this study, the machining conditions have head speed, oscillation speed and polishing time. By using optimum condition, it achieves a ultra precision mirror like surface.

The effects of polishing technique and brushing on the surface roughness of acrylic resin (연마 방법과 칫솔질이 아크릴릭 레진의 표면 거칠기에 미치는 영향)

  • Lee, Ju-Ri;Jeong, Cheol-Ho;Choi, Jung-Han;Hwang, Jae-Woong;Lee, Dong-Hwan
    • The Journal of Korean Academy of Prosthodontics
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    • v.48 no.4
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    • pp.287-293
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    • 2010
  • Purpose: This study evaluated the effect of polishing techniques on surface roughness of polymethyl methacrylate (PMMA), as well as the influence of light-cured surface glaze and subsequent brushing on surface roughness. Materials and methods: A total of 60 PMMA specimens ($10{\times}10{\times}5\;mm$) were made and then divided into 6 groups of 10 each according to the polymerization methods (under pressure or atmosphere) and the surface polishing methods (mechanical or chemical polishing) including 2 control groups. The mechanical polishing was performed with the carbide denture bur, rubber points and then pumice and lathe wheel. The chemical polishing was performed by applying a light-cured surface glaze ($Plaquit^{(R)}$; Dreve-Dentamid GmbH). Accura $2000^{(R)}$, a non-contact, non-destructive, optical 3-dimensional surface analysis system, was used to measure the surface roughness (Ra) and 3-dimensional images were acquired. The surface roughness was again measured after ultrasonic tooth brushing in order to evaluate the influence of brushing on the surface roughness. The statistical analysis was performed with Mann-Whitney test and t-test using a 95% level of confidence. Results: The chemically polished group showed a statistically lower mean surface roughness in comparison to the mechanically polished group (P = .0045) and the specimens polymerized under the atmospheric pressure presented a more significant difference (P = .0138). After brushing, all of the groups, except the mechanically polished group, presented rougher surfaces and showed no statistically significant differences between groups. Conclusion: Although the surface roughness increased after brushing, the chemical polishing technique presented an improved surface condition in comparison to the mechanical polishing technique.