• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.707-710
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• 2004

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). In this paper, we have investigated slurry properties and CMP performance of silicon dioxide (oxide) as a function of different temperature of slurry. Thermal effects on the silica slurry properties such as pH, particle size, conductivity and zeta potential were studied. Moreover, the relationship between the removal rate (RR) with WIWNU and slurry properties caused by changes of temperature were investigated. Therefore, the understanding of these temperature effects provides a foundation to optimize an oxide CMP Process for ULSI multi-level interconnection technology.

• Journal of Electrochemical Science and Technology
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• v.11 no.4
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• pp.346-351
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• 2020

The removal characteristics of copper (Cu) from electrochemical surface by voltage-activated reaction were reviewed to assess the applicability of electrochemical-mechanical polishing (ECMP) process in three types of electrolytes, such as HNO₃, KNO₃ and NaNO₃. Electrochemical surface conditions such as active, passive, transient and trans-passive states were monitored from its current-voltage (I-V) characteristic curves obtained by linear sweep voltammetry (LSV) method. In addition, the oxidation and reduction process of the Cu surface by repetitive input of positive and negative voltages were evaluated from the I-V curve obtained using the cyclic voltammetry (CV) method. Finally, the X-ray diffraction (XRD) patterns and energy dispersive spectroscopy (EDS) analyses were used to observe the structural surface states of a Cu electrode. The electrochemical analyses proposed in this study will help to accurately control the material removal rate (MRR) from the actual ECMP process because they are a good methodology for predicting optimal electrochemical process parameters such as current density, operating voltage, and operating time before performing the ECMP process.

• Journal of the Korean Society for Precision Engineering
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• v.18 no.11
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• pp.168-173
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• 2001

The chemical mechanical polishing (CMP) is generally consisted of pad, slurry including abrasives and so on. However, there are some problems in a general CMP: defects, a high Cost of Consumable (CoC), an environmental problem. The slurry including abrasives especially gives rise to not only increase a CoC, but also prohibition from achieving an eco-process. This paper introduces an abrasive capsulation pad to achieve an eco-process decreasing abrasives used is CMP. The binder wth a water a water swelling and a water soluble characteristic is used for an auto-conditioning, and the $CeO_2$abrasive is selected for an abrasive capsulation pad. Comparing with a conventional CMP, an abrasive capsulation pad appears good characteristics in ILD CMP and is able to achieve an eco-process decreasing wasted slurry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.121-122
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• 2008

Lithium Niobate (LN:LiNbO3) is a compound of niobium, lithium and oxygen. The characteristics of LN are piezoelectricity, ferroelectricity and photoelectricity, and which is widely used in surface acoustic wave (SAW). To manufacture LN device, the LN surface should be a smooth surface and defect-free because of optical property, but the LN material is processed difficult by traditional processes such as grinding and mechanical polishing (MP) because of its brittleness. To decrease defects, chemical mechanical polishing (CMP) was applied to the LN wafer. In this study, the suitable parameters scuh as pressure and relative velocity, were investigated for the LN CMP process. To improve roughness, the LN CMP was performed using the parameters that were the highest removal rate among process parameters. And, evaluation of optical property was performed by the optical reflectance and non-linear characteristic.

• International Journal of Highway Engineering
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• v.9 no.4
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• pp.117-127
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• 2007

The exposed aggregate PCC(EAP) pavements have been successfully used in Europe and Japan as low-noise pavements. Coarse aggregate are exposed on the pavement surface texture of EAP by removing mortar of surface. The pavement surface texture should maintain not only low-noise characteristic but also adequate skid resistance level during the performance period. Skid resistance decreased with wearing and polishing of tire and pavement surface due to the repetition of tire-pavement contact. Since the tires mainly contact the exposed coarse aggregate, the shape and rock type of coarse aggregate significantly influence wearing and polishing of EAP pavements. The test for resistance to abrasion coarse aggregate by use of the Los Angeles machine(KS F 2508) and the method of test for resistance to abrasion coarse aggregate by use of the Accelerated Polishing Machine(ASTM D 3319-90) are generally used to evaluate polishing characteristics of aggregate. In this study, polishing of coarse aggregate of different five rock types were evaluated by KS F 2508(LA abrasion test) and ASTM D 3319-90(PSV method). The results of LA abrasion test and PSV method were contrary to each other. Since LA abrasion test is estimated the quantity of abrasion by the impact of aggregate, it may not be adequate to evaluate the polishing of aggregate by the repetition of tire. In the case of PSV method, the resistance of polishing is estimated the skid resistance variation of polished aggregate after repetition of tire. The PSV method is adequate for the evaluation on polishing of coarse aggregate. From the test results of PSV method, it was founded that rock type, specific gravity, coarse aggregate angularity, flat or elongated particles in coarse aggregate are significant to the resistance characteristic of coarse aggregate.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.12 no.2
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• pp.17-22
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• 2003

Electropolishing is the electrolytic removal of metal in a highly ionic solution by means of an electrical potential and current. It is normally used to remove a very thin layer of material on the surface of a metal part or component. Electropolishing is able to enhance the material properties of a workpiece and to change its physical dimensions. Also, It is suitable for the polishing of both complex shapes and hardened materials, which are difficult to machine mechanically. therefore, the aim of the present study is to investigate the characteristic of Electropolishing A12024 in terms of current density, polishing time and electrode gap, etc.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.321-326
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• 2005

Chemical mechanical polishing(CMP) process is essential technology to be applied to manufacturing the dielectric layer and metal line in semiconductor devices. It has been known that overpolishing in CMP depends on pattern selectivity as a function of density and pitch, and use of fixed abrasive pad(FAP) is one method which can improve the pattern selectivity. Thus, dishing & erosion defects can be reduced. This paper introduces the manufacturing technique of FAP using hydrophilic polymers with swelling characteristic in water and explains the self-conditioning phenomenon. When applied to tungsten blanket wafers, the FAP resulted in appropriate performance in point of uniformity, material selectivity and roughness. Especially, reduced dishing and erosion was observed in CMP of tungsten pattern wafer with the proposed FAP.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.983-988
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• 2000

The leadframe of thin plate fabricated by stamping method generates a lot of burr and stress in the processing surface because of the mold. The electropolishing equipment was produced in order to increase accuracy and surface roughness for 42%Ni-Fe leadframe. An electrolyte consisted of phosphoric acid, ethylene glycol and deionized water. Experiments were accomplished as polishing conditions were changed such as current density, polishing time, electrode gap and sample shape. The burr from the cutting was eliminated and surface characteristics of high flatness and high luster wre obtained after electropolishing. In addition, the electroplishing had good characteristic in 1.0 A current density and 4㎜ of electrode spaces, and it was affected by the composition of electrolyte and the sample shape.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.89-92
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• 2004

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry. In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.378-381
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• 2003

The chemical mechanical polishing (CMP) has been widely accepted for the global planarization of multi-layer structures in semiconductor manufacturing However, cost of ownership (COO) and cost of consumables (COC) were relatively increased because of expensive slurry. In this paper, the effects of different slurry composition on the oxide CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity. We prepared the various kinds of slurry. In order to save the costs of slurry, the original slurry was diluted by de-ionized water (DIW). And then, alunima abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry.