Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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[ $SiO_2$ ] CMP Characteristic by Additive

첨가제에 따른 $SiO_2$ CMP 특성

  • 이우선 (조선대학교 전기공학과) ;
  • 고필주 (조선대학교 전기공학과) ;
  • 최진우 (조선대학교 전기공학과) ;
  • 신재욱 (조선대학교 전기공학과) ;
  • 서용진 (대불대학교 전기전자공학과)
  • Published : 2003.07.10
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Abstract

The chemical mechanical polishing (CMP) has been widely accepted for the global planarization of multi-layer structures in semiconductor manufacturing However, cost of ownership (COO) and cost of consumables (COC) were relatively increased because of expensive slurry. In this paper, the effects of different slurry composition on the oxide CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity. We prepared the various kinds of slurry. In order to save the costs of slurry, the original slurry was diluted by de-ionized water (DIW). And then, alunima abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry.

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