• Korean Journal of Optics and Photonics
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• v.30 no.4
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• pp.159-166
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• 2019

The trajectory of the transmission ellipsometric pseudoconstant ${\rho}=tan{\psi}_{\mu}e^{i{\Delta}_{\mu}}$ of a uniaxially anisotropic substrate like PET forms a circle in polar coordinates, as the phase-retardation angle is varied at a fixed azimuthal angle. The radius as well as the center's position of this circle are functions of the azimuthal angle only. This circle passes through the point (1,0), and the center of this circle is located on the real axis. These characteristics of the circle are examined analytically, and are utilized to derive simple expressions for the azimuthal angle and the phase-retardation angle of the uniaxially anisotropic substrate using the measured transmission ellipsometric constant. Finally, we confirm that the derived expressions are well applied to the analysis of the optical anisotropy of a PET film.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.327.1-327.1
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• 2014

Nitrides-on-silicon structures are considered to be an excellent candidate for unique design architectures and creating devices for high-power applications. Therefore, a lot of effort has been concentrating on growing high-quality III-nitrides on Si substrates, mostly Si(111) and Si(001) substrates. However, there are several fundamental problems in the growth of nitride compound semiconductors on silicon. First, the large difference in lattice constants and thermal expansion coefficients will lead to misfit dislocation and stress in the epitaxial films. Second, the growth of polar compounds on a non-polar substrate can lead to antiphase domains or other defective structures. Even though the lattice mismatches are reached to 16.9 % to GaN and 19 % to AlN and a number of dislocations are originated, Si(111) has been selected as the substrate for the epitaxial growth of nitrides because it is always favored due to its three-fold symmetry at the surface, which gives a good rotational matching for the six-fold symmetry of the wurtzite structure of nitrides. Also, Si(001) has been used for the growth of nitrides due to a possible integration of nitride devices with silicon technology despite a four-fold symmetry and a surface reconstruction. Moreover, Si(110), one of surface orientations used in the silicon technology, begins to attract attention as a substrate for the epitaxial growth of nitrides due to an interesting interface structure. In this system, the close lattice match along the [-1100]AlN/[001]Si direction promotes the faster growth along a particular crystal orientation. However, there are insufficient until now on the studies for the growth of nitride compound semiconductors on Si(110) substrate from a microstructural point of view. In this work, the microstructural properties of nitride thin layers grown on Si(110) have been characterized using various TEM techniques. The main purpose of this study was to understand the atomic structure and the strain behavior of III-nitrides grown on Si(110) substrate by molecular beam epitaxy (MBE). Insight gained at the microscopic level regarding how thin layer grows at the interface is essential for the growth of high quality thin films for various applications.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.3
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• pp.106-111
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• 2001

The freestanding GaN substrates were grown by hydride vapor phase epitaxy (HVPE) on (0001) sapphire substrate and prepared by using laser induced lift-off. After a mechanical polishing on both Ga and N-surfaces of GaN films with 100$\mu\textrm{m}$ thick, their polarities have been investigated by using chemical etching in phosphoric acid solution, 3 dimensional surface profiler and Auger electron spectroscopy (AES). The composition of the GaN film measured by AES indicted that Ga and N terminated surfaces have the different N/Ga peak ratio of 0.74 and 0.97, respectively. Ga-face and N-face of GaN revealed quite different chemical properties: the polar surfaces corresponding to (0001) plane are resistant to a phosphoric acid etching whereas N-polar surfaces corresponding to(0001) are chemically active.

• Bulletin of the Korean Chemical Society
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• v.28 no.2
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• pp.188-192
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• 2007

In this work, the effects of chemical treatment of polyimide films were studied by FT-IR, X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and contact angles. The adhesion characteristics of the films were also investigated in the peel strengths of polyimide/aluminum films. The increases of surface functional groups of KOH-treated polyimide films were greatly correlated with the polar component of surface free energy. The peel strength of polyimides to metal substrate was also greatly enhanced by increasing the KOH treatment time, which can be attributed to the formation of polar functional groups on the polyimide surfaces, resulting in enhancement of the work of adhesion between polymer film and metal plate.

• Journal of Sensor Science and Technology
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• v.22 no.4
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• pp.244-248
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• 2013

The discovery of a two-dimensional electron gas (2DEG) in $LaAlO_3$ (LAO)/$SrTiO_3$ (STO) heterostructure has stimulated intense research activity. We suggest a new structure model based on $KNbO_3$ (KNO) material. The KNO thin films were grown on $TiO_2$-terminated STO substrates as a p-type structure ($NbO_2/KO/TiO_2$) to form a two-dimensional hole gas (2DHG). The STO thin films were grown on KNO/$TiO_2$-terminated STO substrates as an n-type structure to form a 2DEG. Oxygen pressure during the deposition of the KNO and STO thin films was changed so as to determine the effect of oxygen vacancies on 2DEGs. Our results showed conducting behavior in the n-type structure and insulating properties in the p-type structure. When both the KNO and STO thin films were deposited on a $TiO_2$-terminated STO substrate at a low oxygen pressure, the conductivity was found to be higher than that at higher oxygen pressures. Furthermore, the heterostructure formed at various oxygen pressures resulted in structures with different current values. An STO/KNO heterostructure was also grown on the STO substrate, without using the buffered oxide etchant (BOE) treatment, so as to confirm the effects of the polar catastrophe mechanism. An STO/KNO heterostructure grown on an STO substrate without BOE treatment did not exhibit conductivity. Therefore, we expect that the mechanics of 2DEGs in the STO/KNO heterostructures are governed by the oxygen vacancy mechanism and the polar catastrophe mechanism.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.259-259
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• 2010

Periodically polarity inverted (PPI) ZnO structures on (0001) Al2O3 substrates are demonstrated by plasmas assisted molecular beam epitaxy. The patterning and re-growth methods are used to realize the PPI ZnO by employing the polarity controlling method. For the in-situ polarity controlling of ZnO films, Cr-compound buffer layers are used.[1, 2] The region with the CrN intermediate layer and the region with the Cr2O3 and Al2O3 substrate were used to grow the Zn- and O-polar ZnO films, respectively. The growth behaviors with anisotropic properties of PPI ZnO heterostructures are investigated. The periodical polarity inversion is evaluated by contrast images of piezo-response microscopy. Structural and optical interface properties of PPI ZnO are investigated by the transmission electron microcopy (TEM) and micro photoluminescence ($\mu$-PL). The inversion domain boundaries (IDBs) between the Zn and the O-polar ZnO regions were clearly observed by TEM. Moreover, the investigation of spatially resolved local photoluminescence characteristics of PPI ZnO revealed stronger excitonic emission at the interfacial region with the IDBs compared to the Zn-polar or the O-polar ZnO region. The possible mechanisms will be discussed with the consideration of the atomic configuration, carrier life time, and geometrical effects. The successful realization of PPI structures with nanometer scale period indicates the possibility for the application to the photonic band-gap structures or waveguide fabrication. The details of application and results will be discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.12
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• pp.776-780
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• 2015

In this paper, we have studied the effect of mechanical polishing to Ga-polar face for reducing the wafer bowing and strain in free-standing GaN. After the mechanical polishing to Ga-polar face, the bowing of the free-standing GaN substrate significantly decreased with increasing the size of diamond slurry, and eventually changed the bowing direction from concave to convex. Furthermore, the full width at half maximum (FWHM) of high-resolution X-ray diffraction (HR-XRD) were decreased, especially the FWHM of (1 0 2) reflection for $1.0{\mu}m$ size of diamond slurry was significantly decreased from 630 to 203 arcsec. In the case, we confirmed that the compressive strain in Ga-polar face was fully released by Raman measurement.

• Ocean and Polar Research
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• v.45 no.2
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• pp.89-102
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• 2023

Climate and environmental changes in the Arctic Ocean due to global warming have been linked to extreme climate change in mid-latitude regions, including the Korean Peninsula, requiring a better understanding of the Arctic climate system based on the paleo-analog. This review introduces three paleoenvironmental research cases using neodymium isotopes (¹⁴³Nd/¹⁴⁴Nd, ε_Nd) measured on two different fractions of marine sediments: silicate-bound 'detrital' and Fe-Mn oxide-dominated 'authigenic' fractions. In the first case, detrital ε_Nd in core HH17-1085-GC on the continental shelf off northern Svalbard was used for tracing changes in sediment provenance and associated glacier behavior over the last 16.3 ka. The second case showed the potential use of authigenic ε_Nd as a quasi-conservative water mass tracer. Three prominent ε_Nd peaks and troughs observed in core PS72/410-1 from the Mendeleev Ridge in the western Arctic Ocean over the past 76 ka suggested episodic meltwater discharge events during 51~46, 39~35 and 21~13 ka BP. The last case proposed the use of the difference between authigenic and detrital ε_Nd as a proxy for reconstructing glacier fluctuation. The idea is based on the assumption that enhanced glacial erosion during glacier advances can supply sufficient freshly-exposed rock substrate for incongruent weathering, potentially leading to greater isotopic decoupling between bedrock and dissolved weathering products as recorded in detrital and authigenic ε_Nd, respectively. Thus, it would be worthwhile to take advantage of sedimentary ε_Nd to improve our understanding of past environmental changes in polar regions.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1525_1526
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• 2009

In this paper, we have studied the bulging phenomenon of ink-jet printed silver lines. The used silver inks are DGP-40LT-15C and DGH-55HTG of Advanced Nano Product (ANP) Company. We investigated the behavior of bulging by changing the polarity of the inks, the surface energy of substrate and droplet spacing in printing. The contact angle of the polar inks increased much more sensitively than the nonpolar ink as the surface energy of the substrate increases. In the case of the nonpolar ink, the bulging phenomenon occurred seriously as the droplet spacing decreased at the constant surface energy.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.83-83
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• 2010

We report a new direct printing method, called liquid-mediated nanotransfer molding (LB-nTM), that uses a polar liquid-mediated transfer process. LB-nTM is based on the direct transfer of various materials from a stamp to a substrate via a liquid- bridge between the stamp and the substrate. This procedure can be adopted in automated printing machines that generate various material patterns with a wide range of feature sizes (as small as 60 nm) on diverse substrates. To demonstrate its usefulness, the LB-nTM method was applied to prepare ZnO-nanowire and TIPS-pentacene transistors.