• Nuclear Engineering and Technology
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• v.51 no.5
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• pp.1398-1405
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• 2019

We use a molecular dynamics simulation to explore thermal transport in oxide nuclear fuels with point defects. The effect of vacancy and substitutional defects on the thermal conductivity of plutonium dioxide and uranium dioxide is investigated. It is found that the thermal conductivities of these fuels are reduced significantly by the presence of small amount of vacancy defects; 0.1% oxygen vacancy reduces the thermal conductivity of plutonium dioxide by more than 10%. The missing of larger atoms has a more detrimental impact on the thermal conductivity of actinide oxides. In uranium dioxide, for example, 0.1% uranium vacancies decrease the thermal conductivity by 24.6% while the same concentration of oxygen vacancies decreases the thermal conductivity by 19.4%. However, uranium substitution has a minimal effect on the thermal conductivity; 1.0% uranium substitution decreases the thermal conductivity of plutonium dioxide only by 1.5%.

• Korean Journal of Materials Research
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• v.23 no.9
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• pp.537-542
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• 2013

Two types of Tb- and Na-substituted green phosphors $Ca_{(1-1.5x)}WO_4:Tb_x^{3+}$: and $Ca_{(1-2x)}WO_4:Tb_x^{3+},Na_x^+$ were synthesized with various x values, using a solid-state reaction. The former phosphors contained both substitutional and vacancy point defects, while the later had only substitutional defects. X-ray diffraction results showed that the main diffraction peak, (112), was centered at $2{\theta}=28.72^{\circ}$ and indicated that there was no basic structural deformation caused by substitutions or vacancies. The photoluminescence emission and photoluminescence excitation spectra revealed the optical properties of trivalent terbium ions, $Tb^{3+}$. Typical transitions, $^5D_3{\rightarrow}^7F_6,\;^7F_5,\;^7F_4$ and $^5D_4{\rightarrow}^7F_6,\;^7F_5,\;^7F_4,\;^7F_3$, and cross relaxations were observed. Subtle differences in the photoluminescence of green phosphors were observed as a result of the point defects. The FT-IR spectra indicated that some of the ungerade vibrational modes had shifted positions and changed shapes, spreading out over a wide range of frequencies. This change can be attributed to the different masses of $Tb^{3+}$ and $Na^+$ ions and $V_{Ca}$" vacancies compared to $Ca^{2+}$ ions. The gerade normal modes of the Raman spectra exhibited subtle differences resulting from point defects in $Ca_{(1-1.5x)}Tb_xWO_4$ and $Ca_{(1-2x)}Tb_xNa_xWO_4$.

• Journal of the Korean Data and Information Science Society
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• v.15 no.2
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• pp.387-394
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• 2004

Zero-Inflated Poisson distribution is Poisson distribution with excess zeros. Recently defects of product hardley happen in the manufacturing process. In this case it is desirable to apply to the Zero-Inflated Poisson distribution rather than Poisson. Our target of this paper is to study the tests for changes of rate of defects after the unknown change-point. We are going to compare the powers of the two proposed tests with likelihood tests by the simulations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.86-87
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• 2009

High quality $CuInSe_2$ (CIS) were grown on GaAs substrate by using the hot wall epitaxy method. The behavior of point defects in the CIS layer investigated by using photoluminescence (PL) at 10 K. Point defects originating from $V_{Cu}$, $V_{Se}$, $Cu_{int}$, and $Se_{int}$ were classified as donor or acceptor types. These PL results also led us to confirm that the p-type CIS layer had obviously converted into n-type after the Cu atmosphere treatment. Finally, we found that the In in the CIS layer did not form the native defects, because In existed in the form of stable bonds in the CIS layer.

• Journal of Advanced Information Technology and Convergence
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• v.10 no.2
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• pp.153-166
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• 2020

DDI(Display Driver IC) are used to drive numerous pixels that make up display. For stable driving of DDI, it is necessary to attach a protective film to shield electromagnetic waves. When the protective film is attached, defects often occur if the film is inclined or the center point is not aligned. In order to minimize such defects, an algorithm for correcting the center point and the inclined angle using camera image information is required. This technology detects the corner coordinates of the protective film by image processing in order to correct the positional defects where the protective film is attached. Corner point coordinates are detected using an algorithm, and center point position finds and correction values are calculated using the detected coordinates. LUT (Lookup Table) is used to quickly find out whether the angle is inclined or not. These algorithms were described by Verilog HDL. The method using the existing software requires a memory to store the entire image after processing one image. Since the method proposed in this paper is a method of scanning by adding a line buffer in one scan, it is possible to scan even if only a part of the image is saved after processing one image. Compared to those written in software language, the execution time is shortened, the speed is very fast, and the error is relatively small.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.335-338
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• 1998

We have calculated ultra-low energy silicon-self ion implantations and silicon damages through classical molecular dynamics simulation using empirical potentials. We tested whether the recently developed environment-dependent interatomic ptential (EDIP) was suitable for ultra low ion implantation simulation, and found that point defects formation energies were in good agrrement with other theoretical calculations, but the calculated vacancy migration energy was overestimated. The number of isolated defects that are produced by collision cascades are onlya few of the total number of defects, and fmost of the damages are concentrated into amorphous-like pockets.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.11a
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• pp.444-449
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• 1996

The semiconductor, which is precision product, requires many inspection processes. The surface conditions of the semiconductor chip affect on the functions of the semiconductors. The defects of the chip surface are cracks or voids. As general inspection method requires many inspection procedure, the inspection system which searches immediately and precisely the defects of the semiconductor chip surface is required. We suggest the detection algorithm for inspecting the surface defects of the semiconductor surface. The proposed algorithm first regards the semiconductor surface as random texture and point spread function, and secondly presents the character of texture by linear estimation theorem. This paper assumes that the gray level of each pixel of an image is estimated from a weighted sum of gray levels of its neighbor pixels by linear estimation theorem. The weight coefficients are determined so that the mean square error is minimized. The obtained estimation window(two-dimensional estimation window) characterizes the surface texture of semiconductor and is used to discriminate the defects of semiconductor surface.

• Journal of Institute of Control, Robotics and Systems
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• v.15 no.8
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• pp.761-771
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• 2009

Detecting defects on FPD (Flat Panel Display) color filter before the full panel is made is important to reduce the manufacturing cost. Among many types of defects, the low contrast blemish such as Suzi Mura is difficult to detect using standard CCD cameras. Even skilled inspectors in the inspection line can hardly identify such defects using bare eyes. To overcome this difficulty, point spectrometer has been used to analyze the spectrum to differentiate such defects from normal color filters. However, scanning ever increasing-size color filters by a point spectrometer takes too long time to be used in real production line. We propose a system using a spectral camera which can be viewed as a line scan camera composed of an array of point spectrometers. Three types of lighting system that exhibit different illumination spectrums are devised together with a calibration method of the proposed spectral camera system. To visualize the defect areas, various processing algorithms to identify and to enhance the small differences in spectrum between defective and normal areas are developed. Experiments shows 85% successful visualization. of real samples using the proposed system.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.21 no.9
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• pp.12-20
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• 2022

Delamination and burr defects are important problems in drilling fiber reinforced plastics. A method for measuring FRP drilling defects has been studied. Delamination and burr factors were defined as the relative length or area. Using these factors, the effects of tool shape and drilling conditions on delamination and burr were studied. In this study, the defects that occur when drilling a glass-carbon fiber hybrid composite were compared in terms of three factors. In the glass-carbon fiber hybrid composite, the effects of the feed rate and tool point angle on the delamination and burr factors were similar to those in previous studies. The diameter of the tool did not affect the defect factor. A circular burr was generated in a drill tool with a point angle of 184°, and a relatively small deburring factor was observed compared with a tool with a point angle of 140°.

• Journal of Energy Engineering
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• v.24 no.1
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• pp.1-9
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• 2015

Welding defects affect the performance of welded pipe joints. In this study, a three point bend test of welded steel and medium density polyethylene (MDPE) pipe joints with defects of various defect locations and defect materials was studied using the finite element method. The defect was assumed to be located at 12 o'clock, 3 o'clock or 6 o'clock direction. The results showed that pipes failed more easily on the compression side due to stress or local buckling. The air defect was more dangerous than the steel defect if the defect was located in the compression side; otherwise, the defect material effect on the integrity of pipes was ignorable. It is argued that the integrity of pipes with defects in the compression side is weaker than that in other regions, and the defect should be located in the compression side or the 12 o'clock position in the three point bend test to maximize the effect of defect existence on the pipe structural integrity.