• ETRI Journal
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• v.31 no.6
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• pp.653-659
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• 2009

We have investigated the channel protection layer (PL) effect on the performance of an oxide thin film transistor (TFT) with a staggered top gate ZnO TFT and Al-doped zinc tin oxide (AZTO) TFT. Deposition of an ultra-thin PL on oxide semiconductor films enables TFTs to behave well by protecting the channel from a photo-resist (PR) stripper which removes the depleted surface of the active layer and increases the carrier amount in the channel. In addition, adopting a PL prevents channel contamination from the organic PR and results in high mobility and small subthreshold swings. The PL process plays a critical role in the performance of oxide TFTs. When a plasma process is introduced on the surface of an active layer during the PL process, and as the plasma power is increased, the TFT characteristics degrade, resulting in lower mobility and higher threshold voltage. Therefore, it is very important to form an interface using a minimized plasma process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.693-696
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• 2011

Recently, amorphous oxide semiconductors (AOSs) based thin-film transistors (TFTs) have received considerable attention for application in the next generation displays industry. The research trends of AOSs based TFTs investigation have focused on the high device performance. The electrical properties of the TFTs are influenced by trap density. In particular, the threshold voltage ($V_{th}$) and subthreshold swing (SS) essentially depend on the semiconductor/gate-insulator interface trap. In this article, we investigated the effects of Ar plasma-treated $SiO_2$ insulator on the interfacial property and the device performances of amorphous indium gallium zinc oxide (a-IGZO) TFTs. We report on the improvement in interfacial characteristics between a-IGZO channel layer and gate insulator depending on Ar power in plasma process, since the change of treatment power could result in different plasma damage on the interface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.17-18
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• 2007

The etching characteristics of Zinc Oxide (ZnO) and etch selectivity of ZnO to $SiO_2\;in\;BCl_3$/Ar plasma were investigated. It was found that ZnO etch rate shows a non-monotonic behavior with increasing both Ar fraction in $BCl_3$ plasma, RF power, and gas pressure. The maximum ZnO etch rate of 50.3 nm/min was obtained for $BCl_3$ (80%)/Ar(20%) gas mixture. The plasmas were characterized using optical emission spectroscopy (OES) analysis measurements while chemical state of etched surfaces was investigated with X-ray photoelectron spectroscopy (XPS). From these data the suggestions on the ZnO etch mechanism were made.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.349-350
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• 2012

Porous silicon (PS) was prepared by electrochemical anodization. Ultra-thin zinc oxide (ZnO) capping layers were deposited on the PS by plasma-assisted molecular beam epitaxy (PA-MBE). The effects of the ZnO capping layers on the properties of the as-prepared PS were investigated using scanning electron microscopy (SEM) and photoluminescence (PL). The as-prepared PS has circular pores over the entire surface. Its structure is similar to a sponge where the quantum confinement effect (QCE) plays a fundamental role. It was found that the dominant red emission of the porous silicon was tuned to white light emission by simple deposition of the ultra-thin ZnO capping layers. Specifically, the intensity of white light emission was observed to be enhanced by increasing the growth time from 1 to 3 min.

• Nutrition Research and Practice
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• v.1 no.2
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• pp.113-119
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• 2007

Zn is an essential nutrient that is required in humans and animals for many physiological functions, including immune and antioxidant function, growth, and reproduction. The present study evaluated whether Zn deficiency would negatively affect bone-related enzyme, ALP, and other bone-related minerals (Ca, P and Mg) in rats. Thirty Sprague Dawley rats were assigned to one of the three different Zn dietary groups, such as Zn adequate (ZA, 35 mg/kg), pair fed (PF, 35 mg/kg), Zn deficient (ZD, 1 mg/kg) diet, and fed for 10 weeks. Food intake and body weight were measured daily and weekly, respectively. ALP was measured by spectrophotometry and mineral contents were measured by inductively coupled plasma-mass, spectrophotometer (ICP-MS). Zn deficient rats showed decreased food intake and body weight compared with Zn adequate rats (p<0.05). Zn deficiency reduced ALP activity in blood (RBC, plasma) and the tissues (liver, kidney and small intestine) (p<0.05). Also, Zn deficiency reduced mineral concentrations in rat tissues (Ca for muscle and liver, and Mg for muscle and liver) (p<0.05). The study results imply the requirement of proper Zn nurture for maintaining bone growth and formation.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.65-69
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• 2009

Carbon nanotubes (CNTs) were coated with undoped zinc oxide (ZnO) or 5 wt% gallium-incorporated ZnO (GZO) using various deposition conditions. The CNTs were directly grown on conical-type tungsten substrates at $700^{\circ}C$ using inductively coupled plasma-chemical vapor deposition. The pulsed laser deposition technique was used to deposit the ZnO and GZO thin films with very low stress. Field-emission scanning electron microscopy and high-resolution transmission electron microscopy were used to monitor the variations in the morphology and microstructure of CNTs prior to and after ZnO or GZO coating. The formation of ZnO and GZO films on CNTs was confirmed using energy-dispersive x-ray spectroscopy. In comparison to the as-grown (uncoated) CNT emitter, the CNT emitter that was coated with a thin (10 nm) GZO film showed remarkably improved field emission characteristics, such as the emission current of $325\;{\mu}A$ at 1 kV and the threshold field of $1.96\;V/{\mu}m$ at $0.1\;{\mu}A$, and it also exhibited the highly stable operation of emission current up to 40 h.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.208-208
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• 2010

Zinc oxide (ZnO) is a functional material with interesting optical and electrical properties, a wide band gap (more than 3.3 eV), a high transmittance in the visible light region, piezoelectric properties, and a high n-type conductivity. This material has been investigated for use in many applications, such as transparent electrodes, blue light-emitting diodes, and ultra-violet detector. ZnO films grown under low oxygen pressure by thin film deposition methods show low resistivity and large free electron concentration. Therefore, reducing the background carrier concentration in ZnO films is one of the major challenges ahead of realizing high-performance ZnO-based optoelectronic devices. In this study, we deposited ZnO thin films on sapphire substrates by pulsed laser deposition (PLD) with employing an oxygen plasma source to decrease the background free-electron concentration and enhance the crystalline quality. Then, the substrate temperature was varied between 200 'C to 900 'C The vacuum chamber was initially evacuated to a pressure of $10^{-6}$ Torr, and then a pure $O_2$ gas was introduced into the chamber and the pressure during deposition was maintained at $10^{-2}$ Torr. Crystallinity and orientation of ZnO films were investigated by X-ray diffraction (XRD). The film surface was analyzed with atomic force microscope (AFM). And electrical properties were measured at room temperature by Hall measurement.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.203.1-203.1
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• 2013

Zinc oxide (ZnO) nanocrystalline thin films on various growth temperatures for active layer and different buffer layer thickness were grown by plasma-assisted molecular beam epitaxy (PA-MBE) on Si substrates. The ZnO active layer were grown with various growth temperature from 500 to $800^{\circ}C$ and the ZnO buffer layer were grown for different time from 5 to 40 minutes. To investigate the structural and optical properties of the ZnO thin films, scanning electron microscope (SEM), X-ray diffractometer (XRD), and photoluminescence (PL) spectroscopy were used, respectively. In the SEM images, the ZnO thin films have high densification of grains and good roughness and uniformity at $800^{\circ}C$ for active layer growth temperature and 20 minutes for buffer layer growth time, respectively. The PL spectra of ZnO buffer layers and active layers display sharp near band edge (NBE) emissions in UV range and broad deep level emissions (DLE) in visible range. The intensity of NBE peaks for the ZnO thin films significantly increase with increase in the active layer growth temperature. In addition, the NBE peak at 20 minutes for buffer layer growth time has the largest emission intensity and the intensity of DLE peaks decrease with increase in the growth time.

• Asian-Australasian Journal of Animal Sciences
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• v.23 no.8
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• pp.1066-1072
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• 2010

In this study, the effects of replacing inorganic copper, zinc and manganese with different levels of organic complexes of the same trace minerals on the lipid peroxidation and antioxidant defense systems in broilers were investigated. Two-hundred Ross-308 one-day-old broiler chickens were placed on controlled diets until 42 d of age. The experimental animals were divided into four groups comprising three experimental groups and one control group, each consisting of 50 chickens. All groups were also divided into five subgroups each containing 10 broiler chicks. The mineral content of the control group diet was controlled using a standard inorganic mineral premix with supplement levels and sources of trace minerals typical of commercial broiler diets according to the National Research Council (NRC) (containing 8 mg Cu as $CuSO_4$, 40 mg Zn as $ZnSO_4$, and 60 mg Mn as MnO, per kg). In the experimental diets, mineral premix was also comprised of inorganic formulations, except for those of Cu, Zn and Mn. Organically-complexed Cu, Zn, and Mn were separately added to the basal diet at 1/3 (L1), 2/3 (L2) and 3/3 (L3) levels with respect to the NRC recommendation, as Bioplex $Cu^{TM}$, Bioplex $Zn^{TM}$, Bioplex $Mn^{TM}$. At the end of the trial, the plasma Zn level significantly increased when the plasma Cu level significantly decreased (p<0.05) in chickens fed at 2/3 and 3/3 levels of organically complexed minerals. The liver trace mineral concentrations were significantly higher in chickens fed inorganic trace minerals in comparison to those fed organically-complexed minerals. The plasma malondialdehyde (MDA) level of experimental chickens was decreased in groups receiving levels of organic Cu, Zn and Mn in comparison to those fed inorganic forms (p<0.01). The erythrocyte superoxide dismutase (SOD) activity was higher in all groups receiving the organic mineral supplements in comparison to those fed inorganic forms (p<0.01). No differences were observed on either the erythrocyte catalase (CAT) activity or the plasma ceruloplasmin (Cp) levels, and the liver MDA levels and liver CAT and SOD activities in any of the groups that received the organic supplements of Cu, Zn, and Mn. It was concluded that supplementation of lower levels of organically-complexed copper, zinc, and manganese instead of their inorganic forms in diets had no negative effects on the antioxidant defense system in broilers.

• The Journal of Advanced Prosthodontics
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• v.12 no.2
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• pp.75-82
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• 2020

PURPOSE. The aim of this study was to investigate the shear bond strength of luting cements used with implant retained restorations on to titanium specimens after different surface treatments. MATERIALS AND METHODS. One hundred twenty disc shaped specimens were used. They were divided into three groups considering the surface treatments (no treatment, sandblasting, and oxygen plasma treatment). Water contact angle of specimens were determined. The specimens were further divided into four subgroups (n=10) according to applied cement types: polycarboxylate cement (Adhesor Carbofine-AC), temporary zinc oxide free cement (Temporary CementZOC), non eugenol provisional cement for implant retained prosthesis (Premier Implant Cement-PI), and non eugenol acrylic-urethane polymer based provisional cement for implant luting (Cem Implant Cement-CI). Shear bond strength values were evaluated. Two-way ANOVA test and Regression analysis were used to statistical analyze the results. RESULTS. Overall shear bond strength values of luting cements defined in sandblasting groups were considerably higher than other surfaces (P<.05). The cements can be ranked as AC > CI > PI > ZOC according to shear bond strength values for all surface treatment groups (P<.05). Water contact angles of surface treatments (control, sandblasting, and plasma treatment group) were 76.17° ± 3.99, 110.45° ± 1.41, and 73.80° ± 4.79, respectively. Regression analysis revealed that correlation between the contact angle of different surfaces and shear bond strength was not strong (P>.05). CONCLUSION. The retentive strength findings of all luting cements were higher in sandblasting and oxygen plasma groups than in control groups. Oxygen plasma treatment can improve the adhesion ability of titanium surfaces without any mechanical damage to titanium structure.