• Journal of Surface Science and Engineering
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• v.36 no.1
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• pp.9-13
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• 2003

Plasma polymerized organic thin films were deposited on Si(100), glass and metal substrates at $25∼100 ^{\circ}C$ using thiophene and toluene precursors by PECVD method. In order to compare physical and electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 30∼100 W and deposition temperature on both corrosion protection efficiency and physical properties were studied. We found that the corrosion protection efficiency ($P_{k}$), which is one of the important factors for corrosion protection in the interlayer dielectrics of microelectronic devices application, was increased with increasing RF power. The highest $P_{k}$ value of plasma polymerized toluene film (85.27% at 70 W) was higher than that of the plasma polymerized thiophene film (65.17% at 100 W), indicating inhibition of oxygen reduction. The densely packed and tightly interconnected toluene film could act as an efficient barrier layer to the diffusion of molecular oxygen. The result of contact angle measurement showed that the plasma polymerized toluene films have more hydrophobic surface than those of the plasma polymerized thiophene films.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2005.11a
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• pp.99-102
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• 2005

Plasma surface coating is applied to the wood powder to improve its bonding and dispersion with the polypropylene(PP). Some mechanical test results and visual inspection indicates the good compatibility between the wood powder and the PP, and relatively good interfacial adhesion between wood powder and PP matrix was seen. Also, this method is considered as a non-toxic process as compared to other direct chemical method.

• Korean Chemical Engineering Research
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• v.52 no.3
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• pp.378-381
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• 2014

We studied the pasteurization effect of the microorganism involved in the water, using ion-exchanging filter made of the Radiation Induced Grafted Polymerization. This ion-exchanging filter is made by the graft polymerization of GMA, after irradiation of electron beam to the non-woven filter. Then, we made the ion-exchanging filter (EtA, DEA, SS) applying ion-exchanging base to the GMA filter. As a result, the density of the ion-exchanging base is shown as 2.38 mol/kg in case of EtA, 1.79 mol/kg in case of DEA and 0.75 mol/kg in case of SS. Through this filter made by this method, we measured the pasteurization power of E. coli. We found very high elimination rate such as log 4.65 in case of SS-dial filter, which is higher as 3.00 times in comparison with EtA, and 1.10 times in comparison with DEA. This data show the result is very excellent comparing with 3,000 CFU/ml. of city water treatment basis.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1408-1409
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• 2006

In this paper, poly methyl methacrylate thin films were deposited on a ITO glass substrate using a plasma polymerization technique. In order to investigate the influence of the plasma coupling method and plasma conditions on the plasma polymerized poly methyl methacrylate (ppMMA) thin film properties, inductively coupled (ICP) and capacitively coupled plasma (CCP) were used to generate the plasma and the plasma parameters were varied. Molecular structures of the ppMMAs were investigated using a Fourier Transform Infrared (FT-IR) spectroscopy. Dielectric constants of the ppMMA thin films were investigated using a impedance analyzer (HP4192A, LF Impedance Analyzer). Current-Voltage (I-V) characteristics of the ppMMA thin films were investigated using a source measurement unit (SMU: Keithley 2400). Relationship between the plasma coupling technique/process parameter and ppMMA thin films properties were investigated.

• Korean Chemical Engineering Research
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• v.53 no.5
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• pp.614-619
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• 2015

A plasma surface modification of powders has been carried out in a circulating fluidized bed reactor under reduced pressure. Polystyrene (PS) particles treated by plasma are grafted with polyethylene glycol (PEG) on the surface. The virgin, plasma-treated and grafted powders were characterized by DPPH method, FTIR, SEM and contact angle meter. The plasma-treated PS powders have well formed peroxide on the surface, By PEG grafting polymerization, PEG is well grafted and dispersed on the surface of the plasma-treated PS powders. The PEG-g-PS particle was successfully synthesized using the plasma circulating fluidized bed reactor under reduced pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.183-187
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• 1997

The Thin films were obtained by plasma polymerization of phenyl isothiocyanate. Polymerizations were carried out in rf(13.56 [MHz]) glow discharge generated in an inter-electrode capacitively coupled gas flow system. It was fecund that this monomer produces uniform films with a wide range of thicknesses, from hundreds of nanometers to tens of micrometers. The deposition rate appeared to be dependent on the substrate distance from the monomer inlet. The IR data revealed significant decrease in -NCS groups content in the polymer as compared with the monomer spectrum and indicated for the appearance of new absorption bands corresponding to the -CN and C-H aliphatic groups. The soluble fraction by GC was found to be composed of numerous low molecular-weight compounds.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1555-1559
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• 1997

The thin films were obtained by plasma polymerization of phenyl isothiocyanate. Polymerizations were carried out in rf(13.56[MHz]) glow discharge generated in an inter-electrode capacitively coupled gas flow system. It was found that this monomer produces uniform films with a wide range of thicknesses, from hundreds of nanometers to tens of micrometers. The deposition rate appeared to be dependent on the substrate distance from the monomer inlet. The IR data revealed significant decrease in -NCS groups content in the polymer as compared with the monomer spectrum and indicated for the appearance of new absorption bands corresponding to the -CN and C-H aliphatic groups. The soluble fraction by GC was found to be composed of numerous low molecular-weight compounds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.145-148
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• 2001

A large area plasma source using parallel $2{\times}2$ ICP antennas showed improved etching uniformity by the E-ICP operation. ITO etching process with $CH_4$ gas chemistry is optimized with the DOE (Design of Experiment) based on Taguchi method. Various methane ratios in methane and argon mixture are compared to confirm the effect of polymerization. The analysis shows that the effect of bias power is the largeset. We obtained higher ITO etching rate and better uniformity on $350{\times}300mm$ substrate at the 50Hz magnetization frequency of the E-ICP operation technique,

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.145-148
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• 2001

A large area plasma source using parallel 2x2 ICP antennas showed improved etching uniformity by the E-ICP operation. ITO etching process with CH$_4$ gas chemistry is optimized with the DOE(Design of Experiment) based on Taguchi method. Various methane ratios in methane and argon mixture are compared to confirm the effect of polymerization. The analysis shows that the effect of bias power is the largeset. We obtained higher ITO etching rate and better uniformity on 350x300mm substrate at the 50Hz magnetization frequency of the E-ICP operation technique.

• Journal of the Korean Vacuum Society
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• v.22 no.3
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• pp.131-137
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• 2013

The thin insulator films for organic memory device were made by the plasma polymerization method using the styrene monomer which was not the wet process but the dry process. For the formation of stable plasma, we make an effort for controlling the monomer with bubbler and circulator system. The thickness of plasma polymerized styrene insulator layer was 430 nm, the thickness of the Au memory layer was 7 nm thickness of plasma polymerized styrene tunneling layer was 30, 60 nm, the thickness of pentacene active layer was 40 nm, the thickness of source and drain electrodes were 50 nm. The I-V characteristics of fabricated memory device got the hysteresis voltage of 45 V at 40/-40 V double sweep measuring conditions. If it compared with the results of previous paper which was the organic memory with the plasma polymerized MMA insulation thin film, this result was greater than 18 V, the improving ratio is 60%. From the paper, styrene indicated a good charge trapping characteristics better than MMA. In the future, we expect to make the organic memory device with plasma polymerized styrene as the memory thin film.