• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.105-108
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• 1995

The inter-metal dielectric SiOF films were fabricated using remote plasma-enhanced chemical vapour deposition with addition of SF$\sub$6/ gas. SiOF bond formation in these films was recognized by a chemical bonding structural study using FT-IR. The deposition rate and the dielectric constant of a deposited films were decreased with increasing SF$\sub$6/ gas. It was observed that leakage current of SiOF film was reduced the one order compared to a film without addtion of SF$\sub$6/ gas.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.171-174
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• 1994

The drive towards ultra-large-scale integrated circuits a continuous intermetal dielectric films for multi layer interconection. Optimum condition of remote plasma enhanced chemical vapour deposition(RPECVD) was achieved by orthogonal array method. Chracteristics of SiO$_2$ films deposited by using remote PECVD with N$_2$O gas were investigated. Etching rate of SiO$_2$ films in P-echant was about 6[A/s] that was the same as the thermal oxide. The films a showed high breakdown voltage of 7(MV/cm) and a resistivity of Bx10$\^$13/[$\Omega$cm] at 7(MV/cm). The interface Trap density of SiO$_2$ has been shown excel lent properties of 5x10$\^$10/[/$\textrm{cm}^2$eV]. It was observed that the dielectric constant dropped to a value of 4. 29 for 150 [W] RF power.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1992년도 추계학술발표강연 및 논문개요집
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• pp.32-32
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• 1992

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2000년도 추계학술발표회 초록집
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• pp.18-19
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• 2000

• 전기화학회지
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• 제2권1호
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• pp.38-45
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• 1999

Electrochemical lithium intercalation into a PECVD (plasma enhanced chemical vapour deposited) carbon film electrode was investigated in 1 M $LiPF_6-EC$ (ethylene carbonate) and DEC (diethyl carbonate) solution during lithium intercalation and deintercalation, by using cyclic voltammetry supplemented with ac-impedance spectroscopy. The size of the graphitic crystallite in the a- and c-axis directions obtained from the carbon film electrode was much smaller than those of the graphite one, indicating less-developed crystalline structure with hydrogen bonded to carbon, from the results of AES (Auger electron spectroscopy), powder XRD (X-ray diffraction) method, and FTIR(Fourier transform infra-red) spectroscopy. It was shown from the cyclic voltammograms and ac-impedance spectra of carbon film electrode that a threshold overpotential was needed to overcome an activation barrier to entrance of lithium into the carbon film electrode, such as the poor crystalline structure of the carbon film electrode showing disordered carbon and the presence of residual hydrogen in its structure. The experimental results were discussed in terms of the effect of host carbon structure on the lithium intercalation capability.

• 한국염색가공학회지
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• 제21권3호
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• pp.19-25
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• 2009

Polymerization of tetraethoxysilane on a glass substrate was investigated by remote microwave plasma using argon with portions of nitrous oxide as carrier gas. Transparent layer like a thickness of 0.5 ${\mu}m$ 3 ${\mu}m$ were obtained, differing in chemical composition, depending on plasma power and treatment time as well as on ageing time. In general the milder the treatment and the shorter the ageing was, the higher was the content of organic structural elements in the layer. We have identified that the chemical structure of our samples composed of mainly Si O and Si C groups containing aliphatics, carbonyl groups. These results were obtained by X ray photon spectroscopy, Fourier transformed infrared spectroscopy, and scanning electron microscope combined with Energy dispersive X ray spectroscopy.

• 한국진공학회지
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• 제22권1호
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• pp.31-36
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• 2013

마이크로플라즈마 화학기상증착법(microwave plasma enhanced chemical vapor deposition, MPCVD)에 의하여 형성된 비정질 탄소 박막의 효율적인 도핑 공정을 위하여, 비정질 탄소 박막의 성장 직전 nucleated seed 상태의 기판 혹은 일부 성장된 박막 위에 비소(As) 이온을 이온 주입하였고 그 직후 다시 MPCVD에 의하여 박막을 성장시켰다. MPCVD에 의한 성장 자체가 약 $500{\sim}600^{\circ}C$ 온도에서의 어닐링 공정을 대체할 수 있으므로, 기존의 이온 주입 후 별도의 어닐링 공정과 비교 시 간략화된 공정으로도 어닐링 효과가 있다고 할 수 있다. 이온 주입 후 박막 성장으로 어닐링 효과를 얻은 비정질 탄소 박막의 경우, $2.5V/{\mu}m$의 전계에서 약 $0.1mA/cm^2$의 전계 방출 특성을 관찰할 수 있었고 또한 라만 스펙트럼 특성에서도 다이아몬드 특성 및 그래파이트 특성 모두 뚜렷이 관찰되었다. 전기적, 구조적 특성 관찰로부터 이온 주입된 As 이온이 자동 어닐링 효과에 의해 충분히 비정질 탄소 박막에 도핑되었다고 할 수 있다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.1113-1116
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• 2003

This review article gives a comprehensive compilation of recent developments in low temperature deposited poly Si flms, also known as microcrystalline silicon. The development of various ion energy suppression techniques for plasma enhanced chemical vapour deposition and ionless depositions such as HWCVD and expanding thermal plasma, and their effect on the material and solar cell efficiencies are described. A correlation between ef.ciency and the two most important process parameters, i.e., growth rate and process temperature is carried out. Finally, the application of these poly Si cells in multijunction cell structures and the best efficiencies worldwide by various deposition techniques are discussed.

• 열처리공학회지
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• 제5권1호
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• pp.1-12
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• 1992

In order to improve adhesive force of TiN film, we sputtered titanium as interlayer before TiN deposition by Plasma Enhanced Chemical Vapour Deposition. We observed changes of hardness and adhesion at a various thickness of titanium interlayer and also examined analysis. At the critical thickness of the titanium interlayer(about $0.2{\mu}$), adhesive force of TiN films were promoted mostly. But over the critical thickness, a marked reduction of adhesive force was showed, because of the internal stress of titanium interlayer. From AES analysis, the adhesion improvement of TiN films was mainly caused by nitrogen diffusion into titanium interlayer during TiN deposition process which relieved stress concentration at TiN coating-substrate interface.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.77-77
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• 2016

Thin films synthesized by plasma processes have been widely applied in a variety of industrial sectors. The structure control of thin film is one of prime factor in most of these applications. It is well known that the structure of this film is closely associated with plasma parameters and species of plasma which are electrons, ions, radical and neutrals in plasma processes. However the precise control of structure by plasma process is still limited due to inherent complexity, reproducibility and control problems in practical implementation of plasma processing. Therefore the study on the fundamental physical properties that govern the plasmas becomes more crucial for molecular scale control of film structure and corresponding properties for new generation nano scale film materials development and application. The thin films are formed through nucleation and growth stages during thin film depostion. Such stages involve adsorption, surface diffusion, chemical binding and other atomic processes at surfaces. This requires identification, determination and quantification of the surface activity of the species in the plasma. Specifically, the ions and neutrals have kinetic energies ranging from ~ thermal up to tens of eV, which are generated by electron impact of the polyatomic precursor, gas phase reaction, and interactions with the substrate and reactor walls. The present work highlights these aspects for the controlled and low-temperature plasma enhanced chemical vapour disposition (PECVD) of Si-based films like crystalline Si (c-Si), Si-quantum dot, and sputtered crystalline C by the design and control of radicals, plasmas and the deposition energy. Additionally, there is growing demand on the low-temperature deposition process with low hydrogen content by PECVD. The deposition temperature can be reduced significantly by utilizing alternative plasma concepts to lower the reaction activation energy. Evolution in this area continues and has recently produced solutions by increasing the plasma excitation frequency from radio frequency to ultra high frequency (UHF) and in the range of microwave. In this sense, the necessity of dedicated experimental studies, diagnostics and computer modelling of process plasmas to quantify the effect of the unique chemistry and structure of the growing film by radical and plasma control is realized. Different low-temperature PECVD processes using RF, UHF, and RF/UHF hybrid plasmas along with magnetron sputtering plasmas are investigated using numerous diagnostics and film analysis tools. The broad outlook of this work also outlines some of the 'Grand Scientific Challenges' to which significant contributions from plasma nanoscience-related research can be foreseen.