• Clinical and Experimental Reproductive Medicine
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• v.24 no.1
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• pp.67-81
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• 1997

To determine the concentration and the physiologic role of metal components in blood plasma and seminal plasma in relation to male infertility, the concentrations of twelve metal components in blood plasma and seminal plasma including Na, Mg, K, Ca, Cr, Mn, Fe, Cu, Zn, Se, Cd and Pb were measured by atomic absorbance spectrophotometery or ion selective electrode analysis. Semen and blood samples were obtained from a total of 110 men including 70 male infertility patients, 20 vasectomized persons and 20 fertility proven volunteers visited to the Male Infertility Clinic of Pusan National University Hospital. The concentrations of Ca, Zn, Mg, Cr and Cd in control group were higher in seminal plasma than in blood plasma, and additionally Pb were higher in infertility group. The concentrations of all metal components revealed no significant difference according to patients' age, resident, occupation, sperm density, motility and hormone level in blood plasma, but some metal components including Ca, Mg, Cu, Mn, Cd and Pb revealed a significant difference according to each these parameters except patient's age in seminal plasma. The concentrations of Mn, Cd and Pb in the vasectomy persons were higher than in the infertility group III including testicular and epididymal factors, but not in blood plasma. We conclude that the quantitative changes of metal components in the seminal plasma may have effects on not only spermatogenesis and sperm function, but also contribute to diagnostic parameter according to organ specificity of the metal in the male reproduction.

• ETRI Journal
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• v.38 no.4
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• pp.675-684
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• 2016

This paper demonstrates the effect of fluoride-based plasma treatment on the performance of $Al_2O_3/AlGaN/GaN$ metal-insulator-semiconductor heterostructure field effect transistors (MISHFETs) with a T-shaped gate length of $0.20{\mu}m$. For the fabrication of the MISHFET, an $Al_2O_3$ layer as a gate dielectric was deposited using atomic layer deposition, which greatly decreases the gate leakage current, followed by the deposition of the silicon nitride layer. The silicon nitride layer on the gate foot region was then selectively removed through a reactive ion etching technique using $CF_4$ plasma. The etching process was continued for a longer period of time even after the complete removal of the silicon nitride layer to expose the $Al_2O_3$ gate dielectric layer to the plasma environment. The thickness of the $Al_2O_3$ gate dielectric layer was slowly reduced during the plasma exposure. Through this plasma treatment, the device exhibited a threshold voltage shift of 3.1 V in the positive direction, an increase of 50 mS/mm in trans conductance, a degraded off-state performance and a larger gate leakage current compared with that of the reference device without a plasma treatment.

• Journal of Environmental Science International
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• v.26 no.1
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• pp.109-118
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• 2017

This study was conducted to investigate the effects of intermittent plasma and electrolysis treatments on lettuce (Lactuca sativa var. oak-leaf.), nutrient solution components ($NO_3{^-}-N$, $NH_4{^+}-N$, $PO{_4}^{3-}-P$, $K^+$, $Ca^{2+}$ and $Mg^{2+}$) and environmental parameters (electrical conductivity, total dissolved solids and pH). The recirculating hydroponic cultivation system consisted of planting port, LED lamp, water reservoir and circulating pump. Nutrient solution was circulated in the following order: reservoir ${\rightarrow}$ filtration-plasma or filtration-electrolysis ${\rightarrow}$ planting port ${\rightarrow}$ reservoir. The results showed that nutrient solution components and environmental parameters were changed by plasma or electrolysis treatment. Lettuce growth was not affected by the intermittent plasma or electrolysis treatment with 30 minutes or 90 minutes, respectively. The roots of the lettuce was damaged by excessive plasma and electrolysis treatment. Electrolysis treatment had greater effect on than plasma treatment because of the accumulation of high levels of TRO (Total Residual Oxidants).

• Transactions on Electrical and Electronic Materials
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• v.8 no.5
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• pp.211-214
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• 2007

Chemical and morphological changes of phenol formaldehyde-based photoresist after $O_2$ radiofrequency(RF) plasma treatment depending on exposure time and source power were investigated. It was found that etch rate of photoresist sharply increased after discharge turn on and reached a limit with increase in plasma exposure time. Contact angle measurements and X-ray photoelectron spectroscopy(XPS) analysis showed that the surface chemical structure become nearly constant after 15 sec of the treatment. Atomic force microprobe(AFM) measurements were shown that surface roughness was increased with plasma exposure time.

• ETRI Journal
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• v.31 no.6
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• pp.653-659
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• 2009

We have investigated the channel protection layer (PL) effect on the performance of an oxide thin film transistor (TFT) with a staggered top gate ZnO TFT and Al-doped zinc tin oxide (AZTO) TFT. Deposition of an ultra-thin PL on oxide semiconductor films enables TFTs to behave well by protecting the channel from a photo-resist (PR) stripper which removes the depleted surface of the active layer and increases the carrier amount in the channel. In addition, adopting a PL prevents channel contamination from the organic PR and results in high mobility and small subthreshold swings. The PL process plays a critical role in the performance of oxide TFTs. When a plasma process is introduced on the surface of an active layer during the PL process, and as the plasma power is increased, the TFT characteristics degrade, resulting in lower mobility and higher threshold voltage. Therefore, it is very important to form an interface using a minimized plasma process.

• YAKHAK HOEJI
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• v.48 no.3
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• pp.171-176
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• 2004

This study was described for measuring clinically relevant levels of glucose in undiluted plasma and whole blood by near-infrared (NIR) spectroscopy. Result from an initial measurement of major blood components powder was over-lapped the absorption bands of glucose at 1500-1600 nm. However, the NIR data of blood components were clearly separated by principle component analysis (PCA) space. By the use of partial least squares (PLS) regression, glucose concentrations in undiluted plasma and whole blood could be determined with standard errors of prediction (SEP) of 15 mg/dl and 76 mg/dl, respectively. Although these blood components possessed strong absorption bands that overlapped with the absorption bands of glucose, successful calibration models could be carried out.

• Proceedings of the KSME Conference
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• 2000.11b
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• pp.247-254
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• 2000

The base pressure of vacuum vessel of the KSTAR (Korea Superconducting Tokamak Advanced Research) Tokamak is to be a ultra high vacuum, $10^{-6}{\sim}10^{-7}Pa$, to produce clean plasma with low impurity containments. For this purpose, the KSTAR vacuum vessel and plasma facing components need to be baked up to at least $250^{\circ}C,\;350^{\circ}C$ respectively, within 24 hours by hot nitrogen gas from a separate baking/cooling line system to remove impurities from the plasma-material interaction surfaces before plasma operation. Here by applying the implicit numerical method to the heat balance equations of the system, overall temperature distributions of the KSTAR vacuum vessel and plasma facing components are obtained during the whole baking process. The model for 2-dimensional baking analysis are segmented into 9 imaginary sectors corresponding to each plasma facing component and has up-down symmetry. Under the resulting combined loads including dead weight, baking gas pressure, vacuum pressure and thermal loads, thermal stresses in the vacuum vessel during bakeout are calculated by using the ANSYS code. It is found that the vacuum vessel and its supports are structurally rigid based on the thermal stress analyses.

• Fisheries and Aquatic Sciences
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• v.20 no.3
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• pp.4.1-4.6
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• 2017

Juvenile Anoplopoma fimbria (mean length $16.8{\pm}2.2cm$, and mean weight $72.8{\pm}5.4g$) were exposed for 2 months with different levels of ammonia (0, 0.25, 0.50, 0.75, 1.00, and 1.25 mg/L). Growth performances such as daily length gain, daily weight gain, condition factor, and hepatosomatic index were significantly decreased by ammonia exposure. Hematological parameters such as red blood cell (RBC) count, hematocrit, and hemoglobin were also significantly decreased. In plasma inorganic components, calcium and magnesium were significantly decreased by ammonia exposure. In plasma organic components, there was no alteration in cholesterol and total protein. In enzyme plasma components, glutamic oxalate transaminase (GOT) and glutamic pyruvate transaminase (GPT) were significantly increased. The results of this study indicated that ammonia exposure can induce significant growth reduction and blood biochemistry alterations of A. fimbria.

• Fisheries and Aquatic Sciences
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• v.22 no.5
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• pp.9.1-9.7
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• 2019

The study investigated the changes in growth performance, hematological parameters, plasma components, and stress indicators of juvenile starry flounder, Platichthys stellatus, depending on varying exposure to hexavalent chromium. P. stellatus was exposed to waterborne chromium at 0, 50, 100, 200, and 400 ppb for 4 weeks. The result showed that Cr exposure resulted in decreased daily length gain (DLG), daily weight gain (DWG), condition factor (CF), and hepatosomatic index (HIS) in P. stellatus. In terms of hematological parameters, red blood cell (RBC) count, hematocrit (Ht), and hemoglobin (Hb) significantly decreased at 400 ppb after 2 weeks. In terms of plasma components, inorganic analysis was unchanged and cholesterol, an organic component, considerably increased at 400 ppb after 4 weeks. Plasma enzyme components including glutamic oxalate transaminase (GOT) and glutamic pyruvate transaminase (GPT) were significantly increased. Stress indicators such as cortisol and glucose were notably increased over 100 ppb after 4 weeks with increasing chromium concentration. The results indicate that exposure to waterborne Cr induced toxic effects on growth, hematological parameters, plasma components, and stress indicators.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1840-1842
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• 2003

This paper describes an experiment of detecting a temperature and components of arc plasma of electrical circuit breaker with a spectroscopic system. The system includes an optical fiber, a monochromator which has three gratings from low to high resolution and ICCD of which time resolution is 50 ns. This system enables measuring a temperature and components of arc plasma of a circuit breaker which is generated and extinguished in a few ms. We use a Planck's law and Boltzmann Plot method for calculating a temperature of arc plasma. A Xenon lamp is used for calibrating the system and this is very important for calculating a temperature of arc plasma. In this study, Arc plasma of Ag and Cu contact was investigated and these represent the contact of low voltage and extra-ultra high voltage circuit breaker, respectively. 8 $kA_{rms}$ test current was applied with a capacitor bank.