• Journal of the Korean Society of Combustion
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• v.12 no.4
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• pp.8-13
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• 2007

Plasma assisted combustion is an old subject for the combustion society, but recently, the subject is refocused partly because techniques for non-thermal plasmas are progressed significantly, and partly because there are lots of applications which need to be overcome by a new reaction technology. In the present study, we have developed plasma assisted burner (plasma burner), which can be used as a heating source in a diesel particulate filter system. The burner can burn 20-60 cc/min of diesel fuel with 50 lpm of fresh air in an exhaust pipe of 2.0 liter diesel engine. Using 20 cc/min of diesel fuel, an exhaust temperature for 2.0 liter diesel engine can be raised up to around $600^{\circ}C$ for a wide range of engine speed (idle-3,000 rpm). The characteristics of the plasma burner are reported, and the possible operating mechanism of it will be discussed based on the effects of an electric field and a plasma on flames.

• 한국연소학회:학술대회논문집
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• 2007.05a
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• pp.202-206
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• 2007

Plasma assisted combustion is an old subject for the combustion society, but recently, the subject is refocused partly because techniques for non-thermal plasmas are progressed significantly, and partly because there are lots of applications which need to be overcome by a new reaction technology. In the present study, we have developed plasma assisted burner (plasma burner), which can be used as a heating source in a diesel particulate filter system. The burner can bum 20 - 60 cc/min of diesel fuel with 50 lpm of fresh air in an exhaust pipe of 2.0 liter diesel engine. Using 20 cc/min of diesel fuel, an exhaust temperature for 2.0 liter disel engine can be raised up to around $600^{\circ}C$ for the range of engine speeds is idle - 3,000 rpm. The characteristics of the plasma burner are reported, and the possible operating mechanism of it will be discussed based on the effects of an electric field and a plasma on flames.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.132-132
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• 2015

Virtual metrology (VM) model based on plasma information (PI) parameter for C4F8 plasma-assisted oxide etching processes is developed to predict and monitor the process results such as an etching rate with improved performance. To apply fault detection and classification (FDC) or advanced process control (APC) models on to the real mass production lines efficiently, high performance VM model is certainly required and principal component regression (PCR) is preferred technique for VM modeling despite this method requires many number of data set to obtain statistically guaranteed accuracy. In this study, as an effective method to include the 'good information' representing parameter into the VM model, PI parameters are introduced and applied for the etch rate prediction. By the adoption of PI parameters of b-, q-factors and surface passivation parameters as PCs into the PCR based VM model, information about the reactions in the plasma volume, surface, and sheath regions can be efficiently included into the VM model; thus, the performance of VM is secured even for insufficient data set provided cases. For mass production data of 350 wafers, developed PI based VM (PI-VM) model was satisfied required prediction accuracy of industry in C4F8 plasma-assisted oxide etching process.

• Journal of the Korean institute of surface engineering
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• v.53 no.2
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• pp.67-71
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• 2020

For deposition technology using plasma, it plays an important role in improving film deposited with high ionization rate through high density plasma. Various deposition methods such as high-power impulse magnetron sputtering and ion-beam sputtering have been developed for physical vapor deposition technology and are still being studied. In this study, it is intended to control plasma using inductive coupled plasma (ICP) antennas and use properties to improve the properties of Hafnium nitride (HfN) films using ICP assisted magnetron sputtering (ICPMS). HfN film deposited using ICPMS showed a finer grain sizes, denser microstructure and better mechanical properties as ICP power increases. The best mechanical properties such as nanoindentation hardness of 47 GPa and Young's modulus of 401 GPa was obtained from HfN film deposited using ICPMS at ICP power of 200 W.

• Journal of Electrical Engineering and Technology
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• v.11 no.2
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• pp.455-462
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• 2016

The electron transport coefficients in not only pure atoms and molecules but also in the binary gas mixtures are necessary, especially on understanding quantitatively plasma phenomena and ionized gases. Electron transport coefficients (electron drift velocity, density-normalized longitudinal diffusion coefficient, and density-normalized effective ionization coefficient) in binary mixtures of TEOS gas with buffer gases such as Kr, Xe, He, and Ne gases, therefore, was analyzed and calculated by a two-term approximation of the Boltzmann equation in the E/N range (ratio of the electric field E to the neutral number density N) of 0.1 - 1000 Td (1 Td = 10⁻¹⁷ V.cm²). These binary gas mixtures can be considered to use as the silicon sources in many industrial applications depending on mixture ratio and particular application of gas, especially on plasma assisted thin-film deposition.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.481-484
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• 2008

In order to reduce IR drop through common electrode in AMOLED, we propose a novel method to form electrical contact between highly-conductive bus lines and common electrode by using a plasma-assisted patterning of OLED layers and double deposition of the common electrode. Plasma-assisted patterning effects on OLED performance and degradation have been investigated. This patterning method caused turn-on voltage decrease, current flow increase at the same applied OLED voltages, quantum efficiency decrease, and rapid degradation at early stage during the lifetime test. However, comparable 70% luminance lifetime were obtained for both patterned and non-patterned OLEDs.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.66-67
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• 2003

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2004.03a
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• pp.294-299
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• 2004

An assessment of a novel laser-electric hybrid propulsion system was conducted, in which a laser-induced plasma was induced through laser beam irradiation onto a solid target and accelerated by electrical means instead of direct acceleration only by using a laser beam. A fundamental study of newly developed rectangular laser-assisted pulsed-plasma thruster (PPT) was conducted. On discharge characteristics and thrust performances with increased peak current compared to our previous study to increase effects of electromagnetic forces on plasma acceleration. Maximum peak current increased for our early study by increasing electromagnetic effects in a laser assisted PPT. At 8.65 J discharge energy, the maximum current reached about 8000 A. Plasma behaviors emitted from a thruster in various cases were observed with an ICCD camera. It was shown that the plasma behaviors were almost identical between low and high voltage cases in initial several hundred nanoseconds, however, plasma emission with longer duration was observed in higher voltage cases. Canted current sheet structures were also observed in the higher voltage cases using a larger capacitor. With a newly developed torsion-balance type thrust stand, thrust performances of laser assisted PPT could be estimated. The impulse bit and specific impulse linearly increased. On the other hand, coupling coefficient and the thrust efficiency did not increase linearly. The coupling coefficient decreased with energy showing maximum value (20.8 ？Nsec/J) at 0 J, or in a pure laser ablation cases. Thrust efficiency first decreased with energy from 0 to 1.4 J and then increased linearly with energy from 1.4 J to 8.6 J. At 8.65 J operation, impulse bit of 38.1 ？Nsec, specific impulse of 3791 sec, thrust efficiency of 8 %, and coupling coefficient of 4.3 ？Nsec/J were obtained.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.39-43
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• 2005

In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.

• Journal of Powder Materials
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• v.24 no.5
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• pp.351-356
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• 2017

Tin dioxide nanoparticles are prepared using a newly developed synthesis method of plasma-assisted electrolysis. A high voltage is applied to the tin metal plate to apply a high pressure and temperature to the synthesized oxide layer on the metal surface, producing nanoparticles in a low concentration of sulfuric acid. The particle size, morphology, and size distribution is controlled by the concentration of electrolytes and frequency of the power supply. The as-prepared powder of tin dioxide nanoparticles is used to fabricate a gas sensor to investigate the potential application. The particle-based gas sensor exhibits a short response and recovery time. There is sensitivity to the reduction gas for the gas flowing at rates of 50, 250, and 500 ppm of $H_2S$ gas.