• Title/Summary/Keyword: piezoelectric semiconductor

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Realistic Circuit Model of an Impact-Based Piezoelectric Energy Harvester

  • Kim, Sunhee;Ju, Suna;Ji, Chang-Hyeon;Lee, Seungjun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.5
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    • pp.463-469
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    • 2015
  • A vibration-based energy harvester and its equivalent circuit models have been reported. Most models predict voltage signals at harmonic excitation. However, vibrations in a natural environment are unpredictable in frequency and amplitude. In this paper, we propose a realistic equivalent circuit model of a frequency-up-converting impact-based piezoelectric energy harvester. It can describe the behavior of the harvester in a real environment where the frequency and the amplitude of the excitation vary arbitrarily. The simulation results of the model were compared with experimental data and showed good agreement. The proposed model can predict both the impact response and long term response in a non-harmonic excitation. The model is also very useful to analyze the performance of energy conversion circuitry with the harvester.

Fuzzy Controller Design for a Nano Precision Stage Driven by a PZT (PZT 구동 나노 정밀도 스테이지를 위한 퍼지 제어기 개발)

  • Ha, Ho-Jin;Jeong, Kyu-Won
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.18 no.2
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    • pp.228-233
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    • 2009
  • An ultra-precision stage is used in many industrial areas such as precision machine tools or semiconductor apparatus. These stages used to be driven by piezoelectric actuators in order to obtain ultra precision positioning resolution. Piezoelectric actuator can be moved fast in nanometer resolution. However, it has relatively large non-linear characteristics like hysteresis and creep curve. Although several kinds of control techniques have been developed, controller design method is still complicated. In this paper fuzzy control rules are developed intuitively. In order to verify the performance a series of experiments were conducted and the results were compared with those of the PID controller case.

Monolithic film Bulk Acoustic Wave Resonator using SOI Wafer (SOI 웨이퍼를 이용한 압전박막공진기 제작)

  • 김인태;김남수;박윤권;이시형;이전국;주병권;이윤희
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.12
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    • pp.1039-1044
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    • 2002
  • Film Bulk Acoustic Resonator (FBAR) using thin piezoelectric films can be made as monolithic integrated devices with compatibility to semiconductor process, leading to small size, low cost and high Q RF circuit elements with wide applications in communications area. This paper presents an MMIC compatible suspended FBAR using SOI micromachining. It is possible to make a single crystal silicon membrane using a SOI wafer In fabricating active devices, SOI wafer offers advantage which removes the substrate loss. FBAR was made on the 12㎛ silicon membrane. Electrode and Piezoelectric materials were deposited by RF magnetron sputter. The maximum resonance frequency of FBAR was shown at 2.5GHz range. The reflection loss, K$^2$$\_$eff/, Q$\_$serise/ and Q$\_$parallel/ in that frequency were 1.5dB, 2.29%, 220 and 160, respectively.

A Piezoelectric Energy Harvester with High Efficiency and Low Circuit Complexity

  • Do, Xuan-Dien;Nguyen, Huy-Hieu;Han, Seok-Kyun;Ha, Dong Sam;Lee, Sang-Gug
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.3
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    • pp.319-325
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    • 2015
  • This paper presents an efficient vibration energy harvester with a piezoelectric (PE) cantilever. The proposed PE energy harvester increases the efficiency through minimization of hardware complexity and hence reduction of power dissipation of the circuit. Two key features of the proposed energy harvester are (i) incorporation synchronized switches with a simple control circuit, and (ii) a feed-forward buck converter with a simple control circuit. The chip was fabricated in $0.18{\mu}m$ CMOS processing technology, and the measured results indicate that the proposed rectifier achieves the efficiency of 77%. The core area of the chip is 0.2 mm2.

Silicon Nitride Cantilever Arrays Integrated with Si Heater and Piezoelectric Sensors for SPM Data Storage Applications

  • Nam, Hyo-Jin;Jang, Seong-Soo;Kim, Young-Sik;Lee, Caroline-Sunyong;Jin, Won-Hyeog;Cho, Il-Joo;Bu, Jong-Uk
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.5 no.1
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    • pp.24-29
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    • 2005
  • Silicon nitride cantilevers integrated with silicon heaters and piezoelectric sensors were developed for the scanning probe microscope (SPM) based data storage application. These nitride cantilevers are expected to have better mechanical stability and uniformity of initial bending than the previously developed silicon cantilevers. Data bits of 40 nm in diameter were recorded on PMMA film and the sensitivity of the piezoelectric sensor was 0.615 fC/nm, meaning that indentations less than 20 nm in depth can be detected. For high speed operation, $128{\times}128$ cantilever array was developed.

Precision position control of piezoelectric actuator (압전액추에이터 정밀 위치 제어)

  • Yun S.;Kim C.Y.;Ham Y.B.;Jo J.;Ahn B.K.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.06a
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    • pp.531-536
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    • 2005
  • The purpose of this paper is to improve the hysteresis characteristics of a stack type piezoelectric actuator using system identification and tracking control. Recently, several printing methods that cost less and are faster than previous semiconductor processes have been developed for the production of electric paper and RFID. The system proposed in this study prints by spraying the molten metal, and consists of a nozzle, heating furnace, operating actuator, and an XYZ 3-axis stage, As an operating system, the piezoelectric(PZT) method has very valuable uses. However, the PZT actuator has a very big hysteresis characteristic due to the ferroelectric characteristics of the PZT element. This causes problems in the system position control characteristics and deteriorates the performance of the system. In this study, an investigation was conducted to improve the hysteresis characteristics of the PZT actuator that has an output displacement for the input voltage. The study proposed a inverse hysteresis model, a mathematic modeling method that can express the geometric relationship between voltage and displacement, in order to reduce the hysteresis of the PZT actuator. In addition, system identification and PID control methods were examined. Also, it was confirmed that the proposed control strategy gives good precision position control performance.

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LCD Backlight Inverter Drive IC (액정디스플레이 후광 인버터 구동 IC)

  • Jeong, Dong-Youl;Jang, Cheon-Seob;Lee, Seung-Zoo
    • Proceedings of the KIEE Conference
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    • 2002.07d
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    • pp.2568-2571
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    • 2002
  • A LCD backlight inverter control IC based on the piezoelectric transformer (PZT) for Cold Cathode Fluorescent Lamp (CCFL) lighting is proposed. It is indeed a variable frequency, variable duty (VFVD) controller having dual feedback control loops for achieving both the regulation of lamp current and the maximum efficiency. The PWM controller regulates the lamp current, while the PLL controller tunes the operating frequency to the frequency that the efficiency of the combined LC-PZT resonator becomes maximum. The mixed PLL/PWM control technique lets the backlight inverter operate at the maximum efficiency in spite of the variation of component and environment. The controller features include a protection for an open or broken lamps, and an open lamp regulation.

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Fabrication of Piezoelectric Micro Bending Actuators Using Sol-Gel Thick PZT films

  • Park, Joon-Shik;Yang, Seong-Jun;Park, Kwang-Bum;Yoon, Dae-Won;Park, Hyo-Derk;Kang, Sung-Goon;Lee, Nak-Kyu;Na, Kyoung-Hoan
    • Journal of the Semiconductor & Display Technology
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    • v.3 no.3
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    • pp.1-4
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    • 2004
  • Fabrication and electrical and mechanical properties of piezoelectric micro bending actuators (PMBA) using sol-gel-multi-coated thick PZT films and MEMS processes were investigated. PMBA could be used for design and fabrication of micro fluidic devices, for example, micro-pumps, micro dispensers, and so on. PMBA were fabricated using 2 um thick PZT films on Pt (350 nm)/$SiO_2$ (500 nm)/Si ($300\mu\textrm{m}$) substrates and MEMS processes. 7 types of PMBA were fabricated with areas of silicon diaphragms, PZT films and top electrodes. When the sizes of silicon diaphragms, PZT films and Pt top electrodes were reduced from 3000$\times$$1389\mu\textrm{m}$, 4000$\times$$1000\mu\textrm{m}$ and 4000$\times$$900\mu\textrm{m}$ down to 14%, 14% and 11 % of them, respectively, the center displacements of PMBA were decreased from 0.68 um to 0.10 um at 5 Hz and 12 Vpp. So, PMBA with large areas showed larger displacements than PMBA with small areas and experimental results were also good agreement with the plate and shell theory.

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A Resonant-type Step-up DC/DC Converters with Piezoelectric Transducer (압전 트랜스듀서를 이용한 승압형 공진형 직류-직류 컨버터)

  • Park, Joung-Hu;Seo, Gab-Su;Cho, Bo-Hyung;Yi, Kyung-Pyo
    • The Transactions of the Korean Institute of Power Electronics
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    • v.14 no.5
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    • pp.343-354
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    • 2009
  • In this paper, a magnetic-less dc-dc switching converter realizing an integrable power conversion system is described. Instead of magnetic devices, the inductive impedance range of piezoelectric transducers is utilized to store and resonate the energy for soft-switching. Piezoelectric devices have no windings and deliver the power by the electrodes, which lead to mass product through semiconductor-manufacturing process. This paper presents a resonant-type step-up dc-dc power converter employing a disk-type piezoelectric transducer, analyzing the operation principles and the frequency control characteristics. Also, a topology extension of the single stage converter into cascaded multi-stage is presented and analyzed with the operation principles and control characteristics. For verification of the analysis, a 10W output dc-dc power converter hardware was implemented. The hardware experiments shows a good frequency control and power efficiency greater than 96% in the single stage. A hardware prototype of the extended multi-stage one was also realized and tested. The results shows that the converter has the same frequency control performance and high efficiency such as 93%.

Fabrication and Characteristics of a Piezoelectric Valve for MEMS using a Multilayer Ceramic Actuator (적층형 세라믹 엑추에이터를 이용한 MEMS용 압전밸브의 제작 및 특성)

  • 정귀상;김재민;윤석진
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.5
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    • pp.515-520
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    • 2004
  • We report on the development of a Piezoelectric valvc that is designed to have a high reliability for fluid control systems, such as mass flow control, transportation and chemical analysis. The valve was fabricated using a MCA(multilayer ceramic actuator), which has a low consumption power, high resolution and accurate control. The fabricated valve is composed of MCA, a valve actuator die and an seat die. The design of the actuator dic was done by FEM(finite element method) modeling, respectively. And, the valve seat die with 6 trenches was made. and the actuator die, which possible to optimize control to MCA, was fabricated. After Si-wafer direct bonding between the seat die and the actuator die, MCA was also anodic bonded to the scat/actuator die structure. PDMS(poly dimethylsiloxane) sealing pad was fabricated to minimize a leak-rate. It was also bonded to scat die and stainless steel package. The flow rate was 9.13 sccm at a supplied voltage of 100 V with a 50 % duty ratio and non-linearity was 2.24 % FS. From these results, the fabricated MCA valve is suitable for a variety of flow control equipments, a medical bio-system, semiconductor fabrication process, automobile and air transportation industry with low cost, batch recess and mass production.