• Transactions of the Korean Society of Mechanical Engineers A
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• v.39 no.8
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• pp.781-785
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• 2015

In this study, a newly developed ultrasonic fatigue test was performed for durability assessment of polyoxymethylene engineering plastic, which has a high crystallization rate and degree of crystallization. Fatigue strength of POM (polyoxymethylene) was performed on a piezoelectric UFT developed by Mbrosia Co., Ltd(1), operating at a high frequency of 20 kHz. The test results showed a fatigue limit of 5.0~6.0 MPa under fatigue testing at R = -1, 20kHz; and, electron microscopy revealed the size effect by risk volume and fractured dimple structure after the coalescence of micro-voids through the crazing effect, which occurs during the failure of a polymer.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.491-491
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• 2011

Transparent and flexible electronic devices that are light-weight, unbreakable, low power consumption, optically transparent, and mechanical flexible possibly have great potential in new applications of digital gadgets. Potential applications include transparent displays, heads-up display, sensor, and artificial skin. Recent reports on transparent and flexible field-effect transistors (tf-FETs) have focused on improving mechanical properties, optical transmittance, and performances. Most of tf-FET devices were fabricated with transparent oxide semiconductors which mechanical flexibility is limited. And, there have been no reports of transparent and flexible all-organic tf-FETs fabricated with organic semiconductor channel, gate dielectric, gate electrode, source/drain electrode, and encapsulation for sensor applications. We present the first demonstration of transparent, flexible all-organic sensor based on multifunctional organic FETs with organic semiconductor channel, gate dielectric, and electrodes having a capability of sensing infrared (IR) radiation and mechanical strain. The key component of our device design is to integrate the poly(vinylidene fluoride-triflouroethylene) (P(VDF-TrFE) co-polymer directly into transparent and flexible OFETs as a multi-functional dielectric layer, which has both piezoelectric and pyroelectric properties. The P(VDF-TrFE) co-polumer gate dielectric has a high sensitivity to the wavelength regime over 800 nm. In particular, wavelength variations of P(VDF-TrFE) molecules coincide with wavelength range of IR radiation from human body (7000 nm ~14000 nm) so that the devices are highly sensitive with IR radiation of human body. Devices were examined by measuring IR light response at different powers. After that, we continued to measure IR response under various bending radius. AC (alternating current) gate biasing method was used to separate the response of direct pyroelectric gate dielectric and other electrical parameters such as mobility, capacitance, and contact resistance. Experiment results demonstrate that the tf-OTFT with high sensitivity to IR radiation can be applied for IR sensors.

• Journal of the Korean Ceramic Society
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• v.20 no.4
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• pp.315-323
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• 1983

Effect of NiO and $MnO_2$ addtivies on the dielectric piezoelectrics and polarization-reversal properties of $(Pb_{0.936} La_{0.064})$$(Zr_{0.60}Ti_{0.40})O_3$ ceramics have been investigated. The specimens were prepared by the mixed oxide techni-que and atmosphere sintering method. The room temperature X-ray diffraction studies show that perfect perovskite solution with tetragonal structure was obtained from PLZT and its additives. The dielectric constant and dissipation factor decreased with the addition of both NiO and $MnO_2$ The Curie of Curie temperature was not observed but they displayed broadened maxima. The planar coupling factor was improved by addition of NiO and also increased with increasing sintering time carried out at 105$0^{\circ}C$ Addition of $MnO_2$ yielded a markedly high mechanical quality factor. The space-charge field decreased with the addition of NiO but increased with the addition of $MnO_2$ The planar coupling factor and space-charge field showed same dependence on the additivies. The tetragonality Curie temperature and planar coupling factor of $(Pb_{0.936} La_{0.064})$$(Zr_{0.60}Ti_{0.40})O_3$ were higher than those of $(Pb_{0.936} La_{0.064})$$(Zr_{0.568}NU_{0.032}Ti_{0.40})_{0.984}O_3$ but the grain size lattic parameter dielectric constant dissipation factor mechanical quality factor and space-charge field of the former were lower than those of the latter.

• Korean Journal of Dental Materials
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• v.43 no.1
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• pp.17-28
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• 2016

The aim of this study was to evaluate the changes in dentinal permeability after application of dentin desensitizer on exposed dentin immediately after ultrasonic scaling to teeth with non-carious cervical lesions. Thirty caries-free extracted molars were fixed to slide glasses after horizontally being sectioned at 5 mm below the cemento- enamel junction (CEJ). The prepared specimen was connected to a fluid flow measuring device (nano-Flow), and a V-shaped cavity was formed at the CEJ to imitate the non-carious cervical lesion. After no fluid leakage was confirmed in the connected system with specimen, tooth surface was treated ultrasonic cleaning with piezoelectric ultrasonic scalers until dentinal tubules were exposed. And 6 different desensitizers were applied on exposed dentin. Real-time measurements of dentinal fluid flow were performed during ultrasonic scaling and application of dentin desensitizer. To evaluate the occlusion of exposed dentinal tubules, tooth surface was examined by SEM. Following results were observed. After ultrasonic scaling, more dentinal tubules were exposed on the tooth with non-carious cervical lesions compared to tooth without lesions. The rate of fluid flow measured with nano-Flow system had correlation with the degree of dentin occlusion observed with SEM after application of desensitizers on exposed dentin. Desensitizers with glutaraldehyde and HEMA did not decrease the rate of fluid flow and did not show dentin occlusion. Desensitizers with oxalate showed the limited effects on the rate of fluid flow and dentinal tubule occlusion. Desensitizer with resin monomer showed the significant effect on the rate of fluid flow and dentin occlusion.

• Journal of the Korean Society for Heat Treatment
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• v.35 no.2
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• pp.57-65
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• 2022

In this study, the effect of the initial particle size distribution (PSD) of (K_0.5Na_0.5)NbO₃ powders on the microstructure of sintered ceramics was investigated. (K_0.5Na_0.5)NbO₃ powders with uni-, bi-, tri-, and quad-modal PSDs were obtained through a planetary ball-mill. For the specimens sintered at 1080℃, the growth of abnormal grains was promoted from the powders exhibiting quad- and tri-modal PSDs with a high content of large particles, resulting in a microstructure in which huge abnormal grains were predominant. However, as the number of peaks in PSD and the overall particle size decreased, the abnormal grain growth was suppressed and the grain growth of small particles started, resulting in a microstructure with a uniform grain size. For the specimens sintered at 1100℃, huge abnormal grains were not observed due to the decrease in the critical driving force for 2D nucleation even when powders with quad- and tri-modal PSDs were used. It was confirmed that when powder with unimodal PSD was used, a uniform microstructure that was not significantly affected by the sintering temperature could be obtained. The results of this study demonstrate that the microstructure of (K_0.5Na_0.5)NbO₃-based ceramics can be controlled by controlling the particle size of the initial powder.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.8
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• pp.13-19
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• 2001

We report on the fabrication and characterization of $Al_{0.3}Ga_{0.7}N$ HFETs with different barrier layer thickness which were grown using plasma-assisted molecular beam epitaxy (PAMBE). The barrier thickness of $Al_{0.3}Ga_{0.7}N$/GaN HFETs could be optimized in order to maximize 2 dimensional electron gas induced by piezoelectric effect without the relaxation of $Al_{0.3}Ga_{0.7}N$ layer. $Al_{0.3}Ga_{0.7}N$/GaN (20 nm/2 mm) HFET with 0.6 ${\mu}m$-long and 34 ${\mu}m$-wide gate shows saturated current density ($V_{gs}=1\;V$) of 1.155 A/mm and transconductance of 250 ms/mm, respectively. From high frequency measurement, the fabricated $Al_{0.3}Ga_{0.7}N$/GaN HFETs showed $F_t=13$ GHz and $F_{max}=48$ GHz, respectively. The uniformity of less than 5% could be obtained over the 2 inch wafer. In addition to the optimization of epi-layer structure, the relation between breakdown voltage and high frequency characteristics has been examined.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.639-646
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• 2022

Energy harvesting technologies that can convert wasted various energy into usable electrical energy have been widely investigated to overcome the limitation of batteries for the powering of IoT sensors and small electronic devices. Hybrid energy harvesting is known as a technology that enhances the output power of single energy harvesting device by housing two or more various energy harvesting mechanisms. In this study, we introduce a hybrid MME (Magneto-Mechano-Electric) generator coupled with the triboelectric effect. Through FEA modeling, four triboelectric materials, including PI (Polyimide), PFA(Teflon), Cu, and Al, were selected and compared with the expected triboelectric potentials. The effect of surface morphology was investigated as well. Among various combination of triboelectric materials and surface morphologies, PFA-Al combination with the surface morphology having nano-scale square projections showed highest output potential under triboelectrification. It is also experimentally confirmed that output voltage and power of the hybrid MME generator with triboelectric material combinations.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.4
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• pp.1879-1884
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• 2014

Recently, the micro bonding technology comes into the spotlight as the miniaturization of the electronic product. The micro bonding technique can classify by way of laser welding and ultrasonic bonding and etc. However, the research on the micro bonding is much lacks. In this paper, carried out the cooling analysis of the 60 [kHz] ultrasonic bonding equipment to know heat effect of the piezoelectric element when the ultrasonic bonding equipment was operated. The ultrasonic horn having the natural frequency with 60 [kHz] for the dissimilar material bonding of the glass and solder tried to be designed. The parameters and response was set through the basic experiment. The dissimilar material bonding strength analysis using the 60 [kHz] ultrasonic bonding equipment was done. We carried out the bonding for improving bonding strength to using the silver paste. air thightness of bonding surface was confirmed by analysis of bonding interfaces.

• Journal of IKEEE
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• v.22 no.1
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• pp.205-208
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• 2018

In this work, we performed reverse- and forward-gate bias stress tests on normally-off AlGaN/GaN high electron mobility transistors(HEMTs) with p-AlGaN-gate for reliability assessment. Inverse piezoelectric effect, commonly observed in Schottky-gate AlGaN/GaN HEMTs during reverse bias stress, was not observed in p-AlGaN-gate AlGaN/GaN HEMTs. Forward gate bias stress tests revealed distinct degradation of p-AlGaN-gate devices exhibiting sudden increase of gate leakage current. We suggest that forward gate bias stress tests should be performed to define the failure criteria and assess the reliability of normally off p-AlGaN-gate GaN HEMTs.

• Journal of the Korean Ceramic Society
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• v.43 no.2 s.285
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• pp.106-113
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• 2006

PMN-PZT films with thickness of $5\;{\mu}m$ were deposited on $Pt/Ti/SiO_2/Si$ substrate at room temperature using aerosol deposition process. The films showed fairly dense microstructure without any crack. XRD and TEM analysis revealed that the films consisted of randomly oriented nanocrystalline and amorphous phases. Post-annealing process was employed to induce crystallization and grain growth of the as-deposited films and to improve the electrical properties. The annealed film showed markedly improved electrical properties in comparison with as-deposited film. The film after annealing at $700^{\circ}C$ for 1h exhibited the best electrical properties. Dielectric constant $(\varepsilon_r)$, remanent polarization $(P_r)$ and piezoelectric constant $(d_{33})$ were 1050, $13\;{\mu}C/cm^2$ and 120 pC/N, respectively.