• 한국생산제조학회지
• /
• 제25권6호
• /
• pp.410-420
• /
• 2016

The geometric dimension and shape of microchannels that are formed during surface texturing are widely studied for applications in flow control, and drag and friction reduction. In this research, a new method for controlling the deformation of U channels during micro-rolling-based surface texturing was developed. Since the width of the U channels is almost constant, controlling the depth is essential. A calibration procedure of initial rolling gap, and proportional-integral PI controllers and a linear interpolation have been applied simultaneously to control the depth. The PI controllers drive the position of the pre-U grooved roll as well as the rolling gap. The relationship between the channel depth and rolling gap is linearized to create a feedback signal in the depth control system. The depth of micro channels is studied on A2021 aluminum lamina surfaces. Overall, the experimental results demonstrated the feasibility of the method for controlling the depth of microchannels.

• 한국전기전자재료학회논문지
• /
• 제15권5호
• /
• pp.393-397
• /
• 2002

Polyimide (PI) films have been studied widely as the interlayer dielectric materials due to a low dielectric constant, low water absorption, high gap-fill and planarization capability. The polyimide film was etched using inductively coupled plasma system. The etcying characteristics such as etch rate and selectivity were evaluated at different $CF_4/(CF_4+O_2)$chemistry. The maximum etch rate was 8300 ${\AA}/min$ and the selectivity of polyimide to SiO$_2$was 5.9 at $CF_4/(CF_4+O_2)$ of 0.2. Etch profile of polyimide film with an aluminum pattern was measured by a scanning electron microscopy. The vertical profile was approximately $90^{\circ}$ at $CF_4/(CF_4+O_2)$ of 0.2. As 20% $CF_4$ were added into $O_2$ plasma from the results of the optical emission spectroscopy, the radical densities of fluorine and oxygen increased with increasing $CF_4$ concentration in $CF_4/O_2$ from 0 to 20%, resulting in the increased etch rate. The surface reaction of etched PI films was investigated using x-ray photoelectron spectroscopy.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
• /
• pp.30-32
• /
• 1995

The SRM has high efficiency, a wide speed range, high speed capability and DC-series Motor characteristics. So the SRM has been studied as adjustable speed machine. The speed of SRM can be adjusted to switching angle and exciting voltage. This paper suggests an constant speed drive method of SRM. In this method, the speed is controlled by voltage regulation using PI control and the torque is controlled by advance angle in accordance with, load torque variation.

• 제어로봇시스템학회논문지
• /
• 제22권2호
• /
• pp.126-132
• /
• 2016

The root-locus method is often employed when a controller is designed to find controller gain. It is usually used to determine one parameter gain while most controllers for industrial applications have more than one controller gain. For example PID controller has three controller gains, i.e. P, I, and D gains. Thus the conventional root-locus technique cannot complete the design of a controller with more than one controller gain. One way to overcome this drawback has been to apply the root-locus technique for one parameter while other parameters are assumed to be proportional to the parameter or to be constant. However this approach could lead to limited performance of the controller and if we try to adjust the proportional ratio or constants then it could be a long and tedious process of trial and error. Thus it is required to find an effective method for the root-locus technique to design controllers with more than one parameter. To this end this paper proposes an extended root-locus method for controllers with two parameters. In this paper Matlab is used as a computation tool to show the effectiveness of our method by solving examples numerically. As a result we obtained an extended root-locus illustrated in two-dimensional space for a control system with two parameters. The paper then presents how to find two controller gains based on this result of the extended root-locus. The main idea is that we can find the parameters by approaching the desired poles. It is expected that the proposed idea will help control engineers to easily design control systems using the root-locus technique, resulting in more accurate and faster control systems. Note that the extended root-locus idea can be applied to controller design problems with multiple parameters.

• Bulletin of the Korean Chemical Society
• /
• 제14권5호
• /
• pp.546-548
• /
• 1993

The discrete structure of substituted 9-benzonorbornenyl cation 3a and 3c was studied using the empirical ${\Delta}$J equation which was developed by Kelly and coworker$^5$. The ${\Delta}$J values of substituted 9-benzonorbornenyl cations were obtained from p-methyl-6,7-dimethyl benzonorbornen-9-yl (3a) and 9-methyl-6,7-dimethyl benzonorbonen-9-yl (3c) cations under stable ion conditions, and were compared with those of the corresponding ketone analog; these cations were generated by dissolving the corresponding carbinols in superacid at -120$^{\circ}$C and the nmr spectra taken at -60$^{\circ}$C~-90$^{\circ}$C. The ${\Delta}$J values are 8.7 Hz for the bridgehead carbons in cation 3c and 3.1 Hz for cation 3b. The ${\Delta}$J values at C5,8 in fused benzene ring are 14.3 Hz for cation 3c and 8.7 Hz for cation 3a. The excellent correlation of the ${\Delta}$J values with 1$^9F$ chemical shifts of p-fluorophenyl-6,7-dimethylbenzonorbornenyl cation (3d) indicate that ${\Delta}$J value is a reliable probe to charge density at adjacent cationic carbon. These NMR parameters strongly support that the symmetrically ${\pi}$-bridged nonclassical structure (type 2) of substituted 9-benzonorbornenyl cations in stable ion conditions.

• 한국전기전자재료학회논문지
• /
• 제11권6호
• /
• pp.486-492
• /
• 1998

The amorphous Co-based magnetic films have a large saturation flux density, a low coercive force, and a zero magnetostriction constant. Therefore, they have been studied for application to magnetic recoding heads and micro magnetic devices. However, it was found that the magnetic anisotropy was changed for each film fabrication processes. In this study, we investigated how to control the anisotropy of sputtered amorphous $Co_{89}Nb{8.5}Zr{2.5}$ films. After deposition, the rotational field annealing ant the uniaxial field annealing were performed under the magnetic field of 1.5 kOe. the annealing was done at the temperature range from 400 to $600^{\circ}C$ for one hour. As-deposited amorphous $Co_{89}Nb{8.5}Zr{2.5}$ thin film had saturation magnetization ($4\piM_5$) of 0.8 T, coercive force($_IH_C$) of 1.5 Oe, and anisotropy field($H_k$) of 11 Oe. The amorphous $Co_{89}Nb{8.5}Zr{2.5}$ thin films annealed by rotational field annealing at $500^{\circ}C$ for one hour was found to be isotropy, and $4\piM_5$ of 0.9 T was obtained from these films, Also, the magnetic anisotropy of as-deposited films could be controlled by uniaxial field annealing at $400^{\circ}C$ for one hour. Anisotropy field($H_k$) of 17 Oe and $4\piM_5$ of 1.0 T were obtained by this method.

• 한국분무공학회지
• /
• 제19권1호
• /
• pp.9-14
• /
• 2014

Performance of DI diesel engine with high-pressure fuel injection equipment is directly related to its emission characteristics and fuel consumption. So, the electro-hydraulic injector for the common-rail injection system should be designed to meet the precise high fuel delivery control capability. Currently, most high pressure injector in use has a needle driven by the solenoid coil energy or the piezo actuator controlled by charge-discharge of output pulse current. In this study, macroscopic spray approaching method was applied under constant volume chamber to research the performance of three different injectors : solenoid, indirect-acting piezo and direct-acting piezo type for CR direct-injection. LED back illumination for Mie scattering was applied on the liquid spray visible of direct-acting piezo injector, including hydraulic-servo type solenoid and piezo-driven injectors. As main results, we found that a direct-acting piezo injector had better a spray tip penetration than hydraulic-servo injectors in spray visualization.

• Bulletin of the Korean Chemical Society
• /
• 제35권8호
• /
• pp.2438-2442
• /
• 2014

A kinetic study is reported for $S_NAr$ reaction of 1-fluoro-2,4-dinitrobenzene (5a) and 1-chloro-2,4-dinitrobenzene (5b) with alkali-metal ethoxides (EtOM, M = Li, Na, K and 18-crown-6-ether complexed K) in anhydrous ethanol. The second-order rate constant increases in the order $k_{EtOLi}$ < $k_{EtO^-}$ < $k_{EtONa}$ < $k_{EtOK}$ < $k_{EtOK/18C6}$ for the reaction of 5a and $k_{EtOLi}$ < $k_{EtONa}$ < $k_{EtO^-$ < $k_{EtOK}$ < $k_{EtOK/18C6}$ for that of 5b. This indicates that $M^+$ ion behaves as a catalyst or an inhibitor depending on the size of $M^+$ ion and the nature of the leaving group ($F^-$ vs. $Cl^-$). Substrate 5a is more reactive than 5b, although the $F^-$ in 5a is ca. $10pK_a$ units more basic than the $Cl^-$ in 5b, indicating that the reaction proceeds through a Meisenheimer complex in which expulsion of the leaving group occurs after the rate-determining step (RDS). $M^+$ ion would catalyze the reaction by increasing either the nucleofugality of the leaving group through a four-membered cyclic transition state or the electrophilicity of the reaction center through a ${\pi}$-complex. However, the enhanced nucleofugality would be ineffective for the current reaction, since expulsion of the leaving group occurs after the RDS. Thus, it has been concluded that $M^+$ ion catalyzes the reaction by increasing the electrophilicity of the reaction center through a ${\pi}$-complex between $M^+$ ion and the ${\pi}$-electrons in the benzene ring.

• Macromolecular Research
• /
• 제14권1호
• /
• pp.1-33
• /
• 2006

Polyimides (PIs) exhibit excellent thermal stability, mechanical, dielectric, and chemical resistance properties due to their heterocyclic imide rings and aromatic rings on the backbone. Due to these advantageous properties, PIs have found diverse applications in industry. Most PIs are insoluble because of the nature of the high chemical resistance. Thus, they are generally used as a soluble precursor polymer, which forms complexes with solvent molecules, and then finally converts to the corresponding polyimides via imidization reaction. This complexation with solvent has caused severe difficulty in the characterization of the precursor polymers. However, significant progress has recently been made on the detailed characterization of PI precursors and their imidization reaction. On the other hand, much research effort has been exerted to reduce the dielectric constant of PIs, as demanded in the microelectronics industry, through chemical modifications, as well as to develop high performance, light-emitting PIs and liquid crystal (LC) alignment layer PIs with both rubbing and rubbing-free processibility, which are desired in the flat-panel display industry. This article reviews this recent research progresses in characterizing PIs and their precursors and in developing low dielectric constant, light-emitting, and LC alignment layer PIs.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
• /
• pp.77-77
• /
• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.