• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.713-717
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• 2011

This paper was carried out design of 600 V GaN power MOSFET Modeling. We decided trench gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 600 V breankdown voltage and $0.4\;m{\Omega}cm^2ultra$ low on resistance. At the same time, we carried out field ring simulation for obtaining high voltage.

• Current Photovoltaic Research
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• v.3 no.4
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• pp.126-129
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• 2015

Over the last two decades, quantum dot (QD) solar cells have attracted much attention due to the unique properties of QDs, including band gap tunability, slow hot electron cooling, and multiple exiton generation effect. However, most of the QDs employed in photovoltaic devices contain toxic heavy-metals such as cadmium or lead, which may limit the commercial application. Therefore, recently, heavy-metal-free QDs such as Cu-In-S or Cu-In-Se have been developed for application in solar cells. Here, we review the research trends in heavy-metal-free QD solar cells, mainly focusing on Cu-In-Se QD-sensitized solar cells (QDSC).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.794-798
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• 2011

This paper was carried out design of 1,700 V Base Resistance Thyristor for fabrication. We decided conventional BRT (base resistance thyristor) device and Trench Gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 2,000 V breakdown voltage and 3.0 V Vce,sat. At the same time, we carried out field ring simulation for obtaining high voltage.

• Journal of the Korean Solar Energy Society
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• v.36 no.4
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• pp.31-40
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• 2016

The demands for photovoltaic systems on a large scale have grown dramatically and require new technologies to get the high efficiency and reliable operations of power conversion systems. These needs can be realized by the cost-effective and high performance digital revolutions and faster semiconductor switching devices. However, the new power systems have been more sophisticated and their reliability becomes critical issues. In this paper, a new fault-tolerance power conversion scheme for the photovoltaic systems is proposed. The proposed fault-tolerant scheme is able to supply energy from solar panels to loads intermittently in spite of a front boost converter open failure, and its voltage and current controllers are designed to improve the transient performance by using an average model design scheme. The proposed approach is verified both by simulations. The results will enable more timely and wide usage of alternative/renewable energy systems resulting in increased energy security.

• Journal of IKEEE
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• v.18 no.1
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• pp.159-164
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• 2014

This paper targets the development of micro-converter such as a power converter for photovoltaic module. In corresponding to the poor performance of centralized PV system under partial shading, the power converter for single PV module to maximize the energy harvest from PV module. The power converter is constantly tracking the maximum power point of photovoltaic system and increases energy output power. To minimize the quantity of devices and switchs, 320W solar micro-converter is developed using synchronous rectifier. From the basis of these results, through simulations and experiments were verified efficiency.

• Macromolecular Research
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• v.14 no.5
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• pp.524-529
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• 2006

New, thermally robust, arylenevinylene conjugated polymers, including poly(9,9-dioctylfluorenyl-2,7-vinylene) [poly(FV)] and poly[2-(3'-dimethyldodecylsilylphenyl)-1,4-phenylenevinylene] [poly(m-SiPhPV)], were synthesized and used for the fabrication of efficient photovoltaic cells. Bulk heterojunction photovoltaic cells fabricated by blending one of the polymers, [poly(FV)], [poly(m-SiPhPV)], and poly(FV-co-m-SiPhPV), with the fullerene derivative [6,6]-phenyl-$C_{61}$-butyric acid methyl ester (PCBM) were found to have a power conversion efficiency of up to 0.038%..

• Proceedings of the Korean Fiber Society Conference
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• 2003.04a
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• pp.356-357
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• 2003

Organic materials are suitable for use in photoelectric conversion devices. Thus, Organic semiconductors are promising materials for photovoltaic devices and other optoelectronic applications such as light emitting diodes(LED). The organic solar cell seems to be the usefulness in comparison with the inorganic solar cell in terms of workability, ease of processing, low cost, flexibility and area expansion. (omitted)

• Polymer Science and Technology
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• v.26 no.1
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• pp.16-24
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• 2015

• Journal of the Korea Institute of Military Science and Technology
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• v.1 no.1
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• pp.227-237
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• 1998

HgCdTe Is the most versatile material for the developing infrared devices. Not like III-V compound semiconductors or silicon-based photo-detecting materials, HgCdTe has unique characteristics such as adjustable bandgap, very high electron mobility, and large difference between electron and hole mobilities. Many research groups have been interested in this material since early 70's, but mainly due to its thermodynamic difficulties for preparing materials, no single growth technique is appreciated as a standard growth technique in this research field. Solid state recrystallization(SSR), travelling heater method(THM), and Bridgman growth are major techniques used to grow bulk HgCdTe material. Materials with high quality and purity can be grown using these bulk growth techniques, however, due to the large separation between solidus and liquidus line on the phase diagram, it is very difficult to grow large materials with minimun defects. Various epitaxial growth techniques were adopted to get large area HgCdTe and among them liquid phase epitaxy(LPE), metal organic chemical vapor deposition(MOCVD), and molecular beam epitaxy(MBE) are most frequently used techniques. There are also various types of photo-detectors utilizing HgCdTe materials, and photovoltaic and photoconductive devices are most interested types of detectors up to these days. For the larger may detectors, photovoltaic devices have some advantages over power-requiring photoconductive devices. In this paper we reported the main results on the HgCdTe growing and characterization including LPE and MOCVD, device fabrication and its characteristics such as single element and linear array($8{\times}1$ PC, $128{\times}1$ PV and 4120{\times}1$ PC). Also we included the results of the dewar manufacturing, assembling, and optical and environmental test of the detectors.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.23 no.2
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• pp.157-162
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• 2023

Among the failures of photovoltaic power generation facilities, failures caused by surges account for 20% of the total failure rate, and energy emissions of tens to hundreds [A] during power generation and electrical damage to inverters and connection boards lead to electrical safety accidents. In particular, in the case of lightning, an abnormal voltage is induced in an electric circuit to destroy insulation, and the current flowing at this time causes a fire and acts as a factor that accelerates the deterioration of parts. Due to this action, the problem of electrical safety of solar power generation devices spreading from outside the city center to the inside of the city center such as houses, apartments, and government offices is emerging. Since lightning strikes cause both field-based and conducted electrical interference, this effect increases with increasing cable length or conductor loops. In addition, surge damages not only solar modules, inverters and monitoring devices, but also building facilities, which can eventually cause operational shutdown due to fire of the photovoltaic power generation system and consequent financial loss. Therefore, in this paper, a lightning protection system for solar power generation devices is studied for the purpose of reducing property damage and human casualties due to the increase in fire and electrical safety accidents caused by lightning strikes in photovoltaic power generation systems.