• Title/Summary/Keyword: photovoltaic device

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Development of Remote Monitoring and Control Device of 50KW Photovoltaic System Using Wireless Network (유무선네트워크를 이용한 50KW급 태양광발전의 원격감시제어시스템 구축)

  • Park, Jae-Bum;Kim, Byung-Mok;Son, Bang-Won;Rho, Dae-Seok
    • Proceedings of the KAIS Fall Conference
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    • 2011.05a
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    • pp.3-6
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    • 2011
  • 본 논문에서는 배전지능화시스템과의 정보연계, 미래 지능형전력망 운용 및 태양광, 풍력, 연료전지 등과 같은 신에너지전원의 단지를 효율적으로 유지, 관리하기 위하여, 유 무선 네트워크를 이용하여 원격 감시제어장치를 제작하였다. 이 장치는 한기대 캠퍼스 내에 설치되어 있는 50KW급 태양광전원을 대상으로 1km 정도 떨어져 있는 그린에너지연구실에서 유무선 네트워크를 이용하여 실시간으로 출력되는 전압, 전류데이터를 무선네트워크로 장거리 전송하여, HMI 프로그램인 AutoBase로 실시간 모니터링 하도록 제작하였다. 앞으로 본 논문에서 제안한 원거리 감시제어 장치를 이용하여 원거리에 위치한 대규모 태양광발전단지의 데이터를 무선네트워크 기술로 전송받아 보구슈지를 수행할 수 있는 기반을 마련하였다.

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Band Structure Engineering of Monolayer MoS2 by Surface Ligand Functionalization

  • Lee, Sang Yoon;Ramzan, Sufyan
    • Proceeding of EDISON Challenge
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    • 2015.03a
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    • pp.367-370
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    • 2015
  • Monolayer transition metal dicalcogenide (TMDC) materials are currently attracting extensive attention due to their distinctive electronic, transport, and optical properties. For example, monolayer $MoS_2$ exhibits a direct band gap in the visible frequency range, which makes it an attractive candidate for the photocatalytic water splitting. For the photoelectrochemical water splitting, the appropriate band edge positions that overlap with the water redox potential are necessary. Similarly, appropriate band level alignments will be crucial for the light emitting diode and photovoltaic applications utlizing heterojunctions between two TMDC materials. Carrying out first-principles calculations, we here investigate how the band edges of $MoS_2$ can be adjusted by surface ligand functionalization. This study will provide useful information for the realization of ligand-based band engineering of monolayer $MoS_2$ for various electronic, energy, and bio device applications.

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Characteristics of an HTS SMES for Solar Power System

  • Kim Woo-Seok;Lee Seung-wook;Hahn Song-yop
    • Progress in Superconductivity and Cryogenics
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    • v.7 no.2
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    • pp.44-46
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    • 2005
  • A SMES can be a perfect alternative energy storage device to the chemical batteries which are needed by most of the renewable energy supply systems. The chemical battery storage system is so expensive to maintain and causes another environmental problem because they are not recyclable. But, SMES has semi-permanent lifetime and no environmental problems cause it only need coolants which is non flammable, clean and recyclable gas. In order to verify the feasibility of a SMES for the renewable electrical power supply system, electrical characteristics of a test SMES coil with the photovoltaic power system were analyzed in this paper. Simulation results show that we can charge 40 amps of current in test SMES coil using solar power system. The experimental verification will be performed just after development of the peak power tracking system for the solar system.

Recent Progress in Flexible Perovskite Solar Cell Development

  • Ren, Xiaodong;Jung, Hyun Suk
    • Journal of the Korean Ceramic Society
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    • v.55 no.4
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    • pp.325-336
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    • 2018
  • Perovskite solar cells (PSCs) are a new class of photovoltaic devices, which have attracted significant attention due to their remarkable optoelectrical properties, including high absorption coefficients, high carrier mobilities, long carrier diffusion lengths, tunable bandgaps, low cost, and facile fabrication. PSCs have reached efficiencies of 22.70% and 18.36% on rigid fluorine-doped tin oxide and poly(ethylene terephthalate) substrates, respectively; these are comparable to those of single-crystal silicon and copper-indium-gallium-selenium solar cells. Over the past eight years, the photo conversion efficiency of PSCs has been significantly improved by device-architecture adjustments, and absorber and electron/hole transport layer optimization. Each layer is important for the performance of PSCs; hence, we discuss achievements in flexible perovskite solar cells (FPSCs), covering electron/hole-transport materials, electrode materials. We give a comprehensive overview of FPSCs and put forward suggestions for their further development.

Study on the Design of Power MOSFET for Smart LED Driver ICs Package (스마트 LED Driver ICs 패키지용 700 V급 Power MOSFET의 설계 최적화에 관한 연구)

  • Kang, Ey Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.2
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    • pp.75-78
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    • 2016
  • This research was designed 700 level power MOSFET for smart LED driver ICs package. And we analyzed electrical characteristics of the power MOSFET as like breakdown voltage, on-resistance and threshold voltage. Because this research is important optimal design for smart LED ICs package, we designed power MOSFET with design and process parameter. As a result of this research, we obtained $60{\mu}m$ N-drift layer depth, 791.29 V breakdown voltage, $0.248{\Omega}{\cdot}cm^2$ on resistance and 3.495 V threshold voltage. We will use effectively this device for smart LED driver ICs package.

Development of combined generation systems that power storage apparatus is applied (동력저장장치가 적용된 복합발전시스템의 개발)

  • Lee, Jeong-Il;Seo, Jang-Soo;Kang, Byung-Bog;Cha, In-Su
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.51 no.4
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    • pp.169-174
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    • 2002
  • The developments of the solar and the wind power energy are neccessary since the future alternative energies that have no pollution and no limitation are restricted. Currently power generation system of existing problems, combined generation system of photovoltaic(400W) and wind power generation system(400W) was suggested. It combines wind power and solar energy to have the supporting effect from each other. However, weather condition, power compensation device that uses elastic energy of spiral spring to combined generation system was also added for the present study. In an experiment, when output of system gets lower than 12V(charging voltage), power was continuously supplied to load through the inverter by charging energy obtained from generating rotary energy of spiral spring operates in small scale generator.

A Study on the MPPT Control Method for Grid-connected Multi-String Three-Phase Three-Level PV Inverter (계통연계형 멀티스트링 3상 3레벨 태양광 인버터의 MPPT 제어방법에 관한 연구)

  • Kim, Jinsoo;Yang, Oh
    • Journal of the Semiconductor & Display Technology
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    • v.13 no.4
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    • pp.43-48
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    • 2014
  • Two-level inverter has some disadvantages like high harmonics contained in the output current, efficiency limit and stress to switching device as IGBT and FET. Many researches have reported multi-level inverter to complement two-level inverter of problems. In this paper, we suggest MPPT algorithm of multi-string three-level solar inverter that considered nowadays. We added midpoint controller in order to implement the MPPT algorithm because the three-level inverter has to need midpoint controller and procured the stability of direct current link. We verify the superiority of multi-string T-Type inverter and the algorithm we suggested with solar irradiance variation experiment and MPPT efficiency measurement. The MPPT efficiency was confirmed with a high efficiency more than 99.97%.

Optimization of energy level alignment for efficient organic photovoltaics (에너지 준위 접합 최적화를 통한 유기태양전지 효율 향상법)

  • Lee, Hyunbok
    • Vacuum Magazine
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    • v.2 no.2
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    • pp.12-16
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    • 2015
  • Organic photovoltaics (OPVs) have attracted significant interest in an interdisciplinary research field for the decades as a next-generation photovoltaic device due to their unique advantages. One of requirements for OPVs having high power conversion efficiency is the favorable energy level alignment between the electrode/organic and organic/organic interfaces to manage the exciton dissociation and improve the charge transport. In this review, strategies to enhance the OPV performance by controlling the energy level alignment are discussed. The insertion of an exciton blocking layer leads to the efficient dissociation of photogenerated excitons at the donor/acceptor interface enhancing the short-circuit current density. The choice of a donor having a high ionization energy and an acceptor having a low electron affinity increases the open-circuit voltage. The insertion of an appropriate work function modifier which reduces the charge injection barrier removes the S-kink in current density-voltage characteristics of OPVs and improves the fill factor. This review would give a valuable guide to design the efficient OPV structure.

A Study on Control Algorithm of a Switching Device for Junction of Photovoltaic Modules by Using Soft Starting (소프트 스타팅을 이용한 태양광모듈 접속장치용 스위칭 소자의 제어기법에 관한 연구)

  • Kim, Eun-Soo;Ha, Yong-Ho;Hwang, Seon-Hwan;Lee, Jaeseok
    • Proceedings of the KIPE Conference
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    • 2017.07a
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    • pp.306-307
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    • 2017
  • 본 논문에서는 태양광모듈과 전력변환장치간의 접속장치로 사용된 전력용 반도체 스위칭 소자의 소프트 스타팅 기법을 통해 초기 돌입전류를 저감하는 알고리즘을 제안하고자 한다. 태양광 모듈의 경우, 릴레이나 DC차단기 등을 사용하여 전력변환장치와 연동하는 것이 일반적이나, 이 경우 태양광모듈의 수명과 접속장치의 전압 강하 및 응답성 등의 문제를 야기한다. 또한, 전력변환장치 출력단의 커패시터에 초기 동작 시 과도한 동일전류가 발생하게 되고 이는 태양광모듈의 과전류 현상을 발생시켜 모듈의 수명과 더불어 퓨즈의 차단 및 발열 등 비이상적인 현상을 발생시킨다. 따라서, 본 논문에서는 이러한 문제점을 해결하고자 스위칭 소자를 사용한 접속장치 적용하였고, 소프트 스타팅 기법을 이용하여 돌입전류를 저감하고자 한다. 제안한 알고리즘의 경우, 시뮬레이션을 통해서 검증하고자 한다.

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Design and Fabrication of Super Junction MOSFET Based on Trench Filling and Bottom Implantation Process

  • Jung, Eun Sik;Kyoung, Sin Su;Kang, Ey Goo
    • Journal of Electrical Engineering and Technology
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    • v.9 no.3
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    • pp.964-969
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    • 2014
  • In Super Junction MOSFET, Charge Balance is the most important issue of the trench filling Super Junction fabrication process. In order to achieve the best electrical characteristics, the N type and P type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, called Charge Balance Condition. In this paper, two methods from the fabrication process were used at the Charge Balance condition: Trench angle decreasing process and Bottom implantation process. A lower on-resistance could be achieved using a lower trench angle. And a higher breakdown voltage could be achieved using the bottom implantation process. The electrical characteristics of manufactured discrete device chips are compared with those of the devices which are designed of TCAD simulation.