• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.214-217
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• 2017

An IGBT (insulated gate bipolar transistor) device has an excellent current-conducting capability. It has been widely employed as a switching device to use in power supplies, converters, solar inverters, and household appliances or the like, designed to handle high power. The aim with IGBT is to meet the requirements for use in ideal power semiconductor devices with a high breakdown voltage, an on-state voltage drop, a high switching speed, and high reliability for power-device applications. In general, the concentration of the drift region decreases when the breakdown voltage increases, but the on-resistance and other characteristics should be reduced to improve the breakdown voltage and on-state voltage drop characteristics by optimizing the design and structure changes. In this paper, using the T-CAD, we designed the NPT-IGBT (non punch-through IGBT) and FS-IGBT (field stop IGBT) and analyzed the electrical characteristics of those devices. Our analysis of the electrical characteristics showed that the FS-IGBT was superior to the NPT-IGBT in terms of the on-state voltage drop.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.131-134
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• 2016

This research was analyzed thermal characteristics that was appointed disadvantage when smart LED driver ICs was packaged and we applied extracted thermal characteristics for optimal layout design. We confirmed reliability of smart LED driver ICs package without additional heat sink. If the package is not heat sink, we are possible to minimize package. For extracting thermal loss due to overshoot current, we increased driver current by two and three times. As a result of experiment, we obtained 22 mW and 49.5 mW thermal loss. And we obtained optimal data of 350 mA driver current. It is important to distance between power MOSFET and driver ICs. If thhe distance was increased, the temperature of package was decreased. And so we obtained optimal data of 3.7 mm distance between power MOSFET and driver ICs. Finally, we fabricated real package and we analyzed the electrical characteristics. We obtained constant 35 V output voltage and 80% efficiency.

• New & Renewable Energy
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• v.18 no.4
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• pp.64-69
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• 2022

Double-sided photovoltaic (PV) modules have received significant attention in recent years as a technology that can achieve higher annual energy production rates than single-sided modules. The shingled technology is a promising method for manufacturing high-density and high-power modules. These modules are divided by laser and joined with electrically conductive adhesives. The output efficiency of the divided cells depends on the division pattern and the electrode pattern, making it important to understand the output characteristics. In this study, the output characteristics of large-area double-sided light-receiving shingled cells with different split patterns and electrode patterns were investigated. The M6 size, with 6 divisions in the electrode pattern, had the highest efficiency when using 142 front fingers and 146 rear fingers. The M10 size, with 7 divisions, had the highest output when using 150 fingers equally in the front and rear. The M12 size, also with 7 divisions, showed the highest output characteristics when using 192 front fingers and 208 rear fingers.

• Journal of the Korean Solar Energy Society
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• v.26 no.2
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• pp.69-77
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• 2006

Photovoltaic is an attractive technology to remote power applications, because of its reliability, low maintenance, and zero fuel requirements. In this paper represents residential PV system based on BESS(battery energy storage system) for managing the electric power, a pattern of daily operation considering the load characteristics of the house, the generation characteristics of PV power, and utility power leveling. For apply to control algorithm, we consider the load on monthly power consumption trend and daily usage pattern. As for the control of the proposed system, to increase the conversion efficiency of the PV power, bidirectional converter is used for MPPT and SPWM inverter. An experimental system is implemented, and some experimental results are provided to demonstrate the effectiveness of the proposed system.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.8
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• pp.563-569
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• 1999

Boron doped CdS films were prepared by chemical bath deposition using boric acid$(H_3BO_3)$ as donor dopant source, and their electrical, optical properties were investigated as a function of doping concentration. In addition, effects of boron doping of CdS films on characteristics of CdS/CdTe solar cells were investigated. Boron doping highly decreased the resistivity and slightly increased optical band gap of CdS films. The lowest value of resistivity was $2 \Omega-cm \;at\; H_3BO_3/Cd(Ac)_2$ molar ratio of 0.1. For the molar ratio more than 0.1, however, the resistivity increased because of decreasing carrier concentration and mobility and showed similar value for undoped films. The photovoltaic characteristics of CdS/CdTe solar cells with boron doped CdS film improved due to the decrease of the conduction band-Fermi level energy gap of CdS films and the series resistance of solar cell.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.253-260
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• 2012

IGBT (insulated gate bipolar transistor) have received wide attention because of their high current conduction and good switching characteristics. To reduce the power loss of IGBT, the on state voltage drop should be lowered and the switching time should be shorted. However, there is Trade-off between the breakdown voltage and the on state voltage drop. To achieving good electrical characteristics, field stop IGBT (FS IGBT) is proposed. In this paper, 1,200 V planar gate non punch-through IGBT (planar gate NPT IGBT), planar gate FS IGBT and trench gate FS IGBT is designed and optimized. The simulation results are compared with each three structures. In results, we optain optimal design parameters and confirm excellence of trench gate FS IGBT. Experimental result by using medici, shows 40% improvement of on state voltage drop.

• Journal of Power Electronics
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• v.15 no.1
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• pp.256-267
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• 2015

Grid-connected transformerless photovoltaic (PV) inverters (TPVIs) are increasingly dominating the market due to their higher efficiency, lower cost, lighter weight, and reduced size when compared to their transformer based counterparts. However, due to the lack of galvanic isolation in the low voltage grid interconnections of these inverters, the PV systems become vulnerable to leakage currents flowing through the grounded star point of the distribution transformer, the earth, and the distributed parasitic capacitance of the PV modules. These leakage currents are prohibitive, since they constitute an issue for safety, reliability, protection coordination, electromagnetic compatibility, and module lifetime. This paper investigates a wide range of multi-kW range power rating TPVI topologies and classifies them in terms of their leakage current attributes. This systematic classification places most topologies under a small number of classes with basic leakage current attributes. Thus, understanding and evaluating these topologies becomes an easy task. In addition, based on these observations, new topologies with reduced leakage current characteristics are proposed in this paper. Furthermore, the important efficiency and cost determining characteristics of converters are studied to allow design engineers to include cost and efficiency as deciding factors in selecting a converter topology for PV applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.508-513
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• 2017

Ultraviolet (UV) photodetectors are used in various industries and fields of research, including optical communication, flame sensing, missile plume detection, astronomical studies, biological sensors, and environmental research. However, general UV detectors that employ Schottky junction diodes and p-n junctions have high fabrication cost and low quantum efficiency. In this study, we investigated the characteristics of materials used to manufacture UV photodetectors in a low-cost solution process that requires easy fabrication of flexible substrates. We fabricated p-type NiO and n-type ZnO substrates with wide band gap by the sol-gel method and compared the characteristics of substrates prepared under different spin-coating and heat-treatment conditions.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.1
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• pp.18-26
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• 2014

A microgrid can play a significant role for enlargement of renewable energy sources and emission reduction because it is a network of small, distributed electrical power generators operated as a collective unit. In this paper, an application of optimization method to economical operation of a microgrid is studied. The microgrid to be studied here is composed of distributed generation system(DGS), battery systems and loads. The distributed generation systems include combined heat and power(CHP) and small generators such as diesel generators and the renewable energy generators such as photovoltaic(PV) systems, wind power systems. Both of thermal loads and electrical loads are included here as loads. Also the emissions trading scheme to be applied in near future, the cost of unit start-up and the operational characteristics of battery systems are considered as well as the probabilistic characteristics of the renewable energy generation and load. A mathematical equation for optimal operation of this system is modeled based on the mixed integer programming. It is shown that this optimization methodology can be effectively used for economical operation of a microgrid by the case studies.

• Journal of Electrical Engineering and Technology
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• v.9 no.3
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• pp.843-847
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• 2014

In Super Junction (SJ) MOSFETs, charge balance is the most important issue of the SJ fabrication process. In order to achieve the best electrical characteristics, such as breakdown voltage and on-resistance, the N-type and P-type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, which is known as the charge balance condition. In conventional charge balance analysis, based on multi-epi process SJ MOSFETs, analytical model has only N, P pillar width and doping concentration parameter. But applying a conventional charge balance principle to trench filling process, easier than Multi-epi process, is impossible due to the missing of the trench angle parameter. To achieve much more superior characteristics of on-resistance in trench filling SJ MOFET, the appropriate trench angle is necessary. So in this paper, modulated charge balance analysis is proposed, in which a trench angle parameter is added. The proposed method is validated using the TCAD simulation tool.